硅基二氧化硅波导和SOI脊型波导应力双折射研究

采用有限元方法分析了硅基二氧化硅波导和SOI（Silicon on Insulator）脊型波导内部残留热应力引起的双折射.对于硅基二氧化硅波导,应力双折射系数的数量级为10－4,对于上包层为空气的SOI脊型波导,该系数的数量级为10－5,对于上包层为SiO2的SOI脊型波导,该系数的数量级为10－3,可见在硅基二氧化硅波导和上包层为SiO2的SOI脊型波导中产生了大的应力双折射,而在上包层为空气的SOI脊型波导中应力双折射较小.     

Polarization-independent grating couplers for silicon-on-insulator nanophotonic waveguides

We propose the use of subwavelength structures in a waveguide grating to achieve polarization-independent coupling of light between an optical fiber and a silicon-on-insulator (SOI) optical waveguide. The subwavelength structure allows the mode effective indices of the TE and TM modes in the grating section to be precisely engineered. We calculate that coupling efficiency of over 64% is possible using the proposed design for polarization-independent coupling between single-mode optical fibers and SOI nanophotonic waveguides.     

Spectrum reshaping of amplified pulse in silicon nanowaveguide

A device consisting of a cascaded semiconductor optical amplifier (SOA) and silicon on insulator (SOI) optical waveguide is presented to amplify and reshape the frequency spectrum of optical pulses in the picoseconds time duration. Numerical simulations show that the output spectrum of the amplified pulse by SOA can be effectively reshaped by utilizing the SOI waveguide. The length of the SOI waveguide may be judiciously adjusted to significantly reduce the frequency chirp of the output pulse from the SOA resulting in reshaping of the output spectrum. We find that the property of pulse spectrum is sensitive to the input pulse power and its temporal width.     

Energy transfer at optical frequencies to silicon-on-insulator structures

The refractive-index distribution that is intrinsic to the silicon-on-insulator (SOI) material system makes it possible for optical-frequency guided waves to be confined by the SOI silicon layer. The same refractive-index distribution is unusual among nonmetals in that it is possible for those SOI guided waves to interact strongly with nearby optical-frequency radiators, absorbers, and scatterers (e.g., atoms, molecules, and nanoparticles). We calculate the guided-mode excitation efficiency for an exterior particle near the SOI surface and show that it can attain values greater than 80% under appropriate conditions, thus showing that the SOI waveguide system is an attractive platform for the study of optical-frequency surface interactions.     

有限元分析法在SOI基微环谐振器设计中的应用

利用有限元法(FEM)分析了大横截面SOI(Silicon-on-insulator)脊型波导的本征模式分布,确定了脊型波导的单模条件。在保证单模传输的情况下,模拟了SOI微环谐振器中波导耦合器的耦合长度、功率耦合系数与波导尺寸和间距的关系。模拟结果表明:对于W=1μm,H=2μm的SOI脊型波导耦合器,耦合长度LC随波导间距d的增加而增大,功率耦合系数随之减小。在波导间距d0.8μm的情况下,耦合长度LC随着归一化脊高r的增加而增大,当d0.8μm时,耦合长度LC随r的增加而减小。模拟结果为SOI微环谐振器的设计和应用提供了理论依据。     

Analysis of ultra-small photonic large scale integrated circuits

A detailed study of a platform of ultra-small photonic large-scale integrated circuits was conducted. Bandgap structure calculations of silicon-on-insulator (SOI) based photonic crystals have been investigated. The photonic crystal consists of dielectric cylinders in air. Using the band structure calculations we obtained design parameters for the proposed structures. The coupling between the photonic crystal and a waveguide fabricated from SOI system has been analysed. It is shown that the optical coupling is improved by interfacing different types of spot-size converters (SSCs) between the SOI waveguide and the photonic crystal. Also, the possibility and limitations of silicon doped germanium and SOI photonic crystals to analyse the light guiding in the third dimension is discussed.     

Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating

The factors influencing the crosstalk of silicon-on-insulator(SOI) nanowire arrayed waveguide grating(AWG) are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography(DUV) and inductively coupled plasma etching(ICP) technology. The measurement results show that the crosstalk performance is improved by about 7 d B through adopting 800 nm arrayed waveguide width.     

Enhanced third harmonic reflection and diffraction in Silicon on Insulator photonic waveguides

Enhanced third harmonic (TH) generation from Silicon-On-Insulator (SOI) planar waveguides as well as SOI photonic crystal (PhC) slabs is studied in different angular configurations, both in the visible and infrared energy ranges. In the SOI planar waveguide, the multilayer structure causes the optical properties such as TH reflection to be different from those of bulk silicon samples. This behavior is well reproduced by calculations of TH reflectance.Measurements of third-harmonic reflection and diffraction from one-dimensional PhC slabs etched in the SOI waveguide are also reported. The angular positions of TH peaks at various diffraction orders agree well with those calculated from a nonlinear grating equation. Both reflection and diffraction processes contribute to enhanced TH generation efficiency in the PhC slabs.TH reflectance measurements performed on PhC slabs in the near infrared show a resonant interaction between the incident beam and the photonic structure, dependent on the angle of incidence. This leads to a nonlinear conversion efficiency which is strongly enhanced with respect to that of the SOI waveguide, due to the excitation of strong local fields associated with the presence of photonic modes in the PhC slab.     

Stabilization of a multiwavelength erbium-doped fiber laser using a nonlinear silicon waveguide

We propose and demonstrate a multiwavelength erbium-doped fiber laser stabilized by four-wave mixing (FWM) in a nonlinear silicon-on-insulator (SOI) waveguide. The optical gain was provided by an erbium-doped fiber amplifier, and the wavelength selectivity was achieved by a Fabry–Pérot comb filter in the ring cavity. The FWM in the SOI waveguide was enhanced by applying a reverse-biased p-i-n diode structure to reduce free-carrier absorption. Making use of the nonlinearity of the SOI waveguide, a multiwavelength laser with six output wavelengths at 0.8 nm spacing was achieved. The power difference among modes was equalized within a range of 1.8 dB. The power fluctuation of each mode was stabilized to <0.65 dB during 20 min observation at room temperature.     

Effects of multi-band mixing on the spin-polarized transport in quasi-one-dimensional electron waveguides

We present numerical calculations of the energy dispersion of spin-polarized electrons in quasi-one-dimensional electronic waveguides in the presence of Rashba spin–orbit interaction (SOI), by using an efficient expanded basis method. Within this model, the general mixing between any two subbands is taken into account. We investigate the properties of spin-polarized transport in the nonuniform SOI system. It is found that the multi-band mixing brings significant effects on the properties of multiple subbands transport in the regime of high energy, especially for the cases of the wide waveguide, the strong SOI and the long extension of the SOI region.     

Dispersion modified slot optical waveguides

Advent of slot waveguide structures had opened a new era where light can be confined in low index slot guarded by high index slabs. Already in use SOI slot waveguides (contrast ratio is 2.42) have two distinct properties over the conventional waveguides, i.e. high E-field amplitude, optical power, optical intensity in low index materials, and strong E-field confinement localized to nanometer-size low index regions. We hereby propose a low refractive index contrast ratio slot waveguide structure (ratio is 1.18) comprising of commercially available glass material. Novelty lies in showing high E-field amplitude, optical power, optical intensity, and strong E-field confinement in low index slot regions despite of lowest ever reported contrast ratio. A systematic numerical study on the higher order dispersion characteristics of the widely studied SOI-based slot structure and of our proposed low refractive index contrast slot structure is carried out. It has been demonstrated that low refractive index contrast ratio slot optical waveguide GVD properties are quite different than SOI slot optical waveguide. The less normal dispersion existing in this kind of waveguide could have an impact on their applications in various nonlinear or linear applications.     

BPM Simulation and Comparison of 1 × 2 Directional Waveguide Coupling and Y-Junction Coupling Silicon-on-Insulator Optical Couplers

For developing large area opto-electronic silicon-on-insulator (SOI) devices, the optical coupler is a basic key device. In this article, the authors design and simulate 1 2 2 directional waveguide coupling and Y-branch coupling optical couplers based on Unibond SOI rib waveguides. The beam propagation method (BPM) is used for light propagation analysis. The simulation results and comparisons of the two kinds of optical couplers are reported. The S-bend waveguide for attaching to the two kinds of SOI optical coupler is also analyzed by BPM. We find that the directional coupler has lower power loss, but the Y-junction coupler is more wavelength insensitive with the same device size and splitting angle. The fabrication tolerance analysis shows Y-junction coupler has better fabrication characteristics.     

Compact efficient broadband grating coupler for silicon-on-insulator waveguides

We have designed a high-efficiency broadband grating coupler for coupling between silicon-on-insulator (SOI) waveguides and optical fibers. The grating is only 13 microm long and 12 microm wide, and the size of the grooves is optimized numerically. For TE polarization the coupling loss to single-mode fiber is below 1 dB over a 35-nm wavelength range when using SOI with a two-pair bottom reflector. The tolerances to fabrication errors are also calculated.     

SOI-based trapezoidal waveguide with 45° microreflector for noncoplanar optical interconnect

A silicon on insulator (SOI)-based trapezoidal waveguide with a 45° reflector for noncoplanar optical interconnect is demonstrated. The proposed waveguide is fabricated on an orientation-defined (100) SOI substrate by using a single-step anisotropic wet-etching process. The optical performances of proposed waveguides are numerically and experimentally studied. Transmittance of -4.51 dB, alignment tolerance of ±20 μm, cross talk of -53 dB, and propagation loss of -0.404 dB/cm are achieved The proposed waveguide would be a basic element and suitable for the future intrachip optical interconnects.     

SOI大截面单模脊形X型分支波导的研制

报道了硅片直接键合（ＳＤＢ）ＳＯＩ大截面单模脊形互型分支波导的研制．对于波长为１．３μｍ的光，在θ＝２°小分支角时，这种分支波导的通道串音小于－２０ｄＢ，辐射损耗小于０．３ｄＢ．直通传输损耗小于０．８５ｄＢ／ｃｍ．     

SOI梯形大截面单模脊形波导的研制

报道了硅片直接键合ＳＯＩ单模梯形大截面脊形波导的研制，对于小长为１．３μｍ的光这种脊形波导的传输损耗小于０．８５ｄＢ／ｃｍ。     

Low-loss subwavelength metal C-aperture waveguide

We present a design of a linear optical waveguide that utilizes a C-shaped metallic nano-aperture that efficiently transports light while maintaining a spot size of lambda/10. The performance of a C-aperture waveguide is superior to both a regular ridge waveguide and other surface plasmon based metal nano-optical waveguides. The energy transport mechanisms are explained by the coupling of an aperture surface resonance and the thickness resonances inside the guide channel. Finite-difference time-domain simulations of gold C-aperture waveguides are performed for a 1.5 microm wavelength incident plane wave. The 1/e decay length in power transmission is predicted to be approximately 2.5 microm. The total power throughput is 1.66 for the 2.55 microm long guide, with an intensity 6 times that of the incident wave at a distance 120 nm from the exit plane, having a spot size of 150 nm.     

Model of Vernier devices in silicon-on-insulator technology

In order to increase the number of channels that could be multiplexed or demultiplexed in the dense wavelength division multiplexed (DWDM) system based on the resonators on silicon-on-insulator (SOI) technology, the Vernier effect in the series-coupled racetrack resonators is presented to extend the free spectral range (FSR) of the DWDM systems. A method is developed based on a matrix approach to simulate Vernier devices. A three-dimensional full vectorial finite difference (FVFD) model, specifically suited for high index contrast and smaller size waveguides, for example, a waveguide in SOI technology, is developed to obtain the properties of a waveguide. Finally, the Vernier effect in the two series-coupled racetrack resonators is experimentally verified with an improved FSR and interstitial resonance suppression.     

Fabrication of Triplexers Based on Flattop SOI AWG

A triplexer is fabricated based on SOI arrayed waveguide gratings （AWGs）. Three wavelengths of the triplexer operate at different diffraction orders of an arrayed waveguide grating. The signals of 1490nm and 1550nm, which are input from central input waveguide of an AWG, are demultiplexed and the signal of 131Onto, which is input from central output waveguide of an AWG, is uploaded. The tested results show that the downloaded and uploaded signals have fiat-top response. The insertion loss is 9 dB on chip, the nonadjacent crosstalk is less than -30 dB for 1490nm and 1301 nm, and is less than -25 dB for 1550nm, the 3dB bandwidth equates that of the input light source.