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1.
《Angewandte Chemie (Weinheim an der Bergstrasse, Germany)》2017,129(19):5396-5400
Borinium ions, that is, two‐coordinate boron cations, are the most electron‐deficient isolable boron compounds. As borinium ions have only four formal valence electrons on boron, they should show a strong tendency to accept electron pairs on the boron atom to fill its valence shell. Thus chemical reactions of borinium ions are expected to give products in which the coordination number of boron is increased from two to three or four. However, contrary to this expectation, we found that the dimesitylborinium ion (Mes2B+) undergoes twofold 1,2‐carboboration reactions with two equivalents of diphenylacetylene to yield an unprecedented borinium ion ( 1 +) with two substituted vinyl groups on the boron center. NMR spectroscopy and X‐ray diffraction analysis of 1 +, together with electronic‐structure calculations, revealed that the positive charge is delocalized over the entire π‐conjugated system. The fact that the chemical transformation of a borinium ion gives rise to a different borinium ion without a change in the coordination number is remarkable and should provide new insight into the chemistry of the Group 13 elements. 相似文献
2.
A potentiometric method is proposed for the determination or boron in silicon, based on dissolution of silicon by treatment with hydrofluoric acid and ammonium fluoride in the presence of hydrogen peroxide, and conversion of boron to fluoroborate ion. The fluoroborate activity is measured with the Orion fluoroborate-selective electrode. Some important points, such as the effect of various interfering ions and the hydrolysis of fluoroborate ion, are described in detail. The method is applied to the determination of boron in silicon containing at least 10 p.p.m. of boron, with a relative standard deviation of ±4%. 相似文献
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The ion exchange characteristics d Amherlite IRA 743 resin for extracting boron from aqueous fluids have been investigated in detail. The results show that AmherHte IRA 743 resin, a boron specific ion exchange resin, can quantitatively extract boron as the B (OH)4- spedes from weakly basle solution. Some exchangeable anions such as CI- and SO4^2- are present, resulting in an increase in pH value of the loeded solution within the nan, and the boron in natural aqueous fluids with low nH is also extracted by Amberlite IRA 743 resin. However, the voiume of loaded solution must be restricted. The maximum voiume of loaded solution giving quantitative extraction of boron decreases for sample soh.,tiom of lower pH value. Warm HCI solution is more effective than room temperature HCI solution for eluting boron from Amberllte IRA 743 resin. 相似文献
5.
Yongchang Fan Alexander G. Fitzgerald Phillip John Clare E. Troupe John I. B. Wilson 《Mikrochimica acta》2000,132(2-4):435-441
The surface morphology and electronic properties of as-deposited CVD diamond films and the diamond films which have been
subjected to boron ion implantation or hydrogen plasma etching have been systematically studied by high resolution scanning
probe microscopy and spectroscopy techniques. AFM and STM image observations have shown that (a) both the as-deposited CVD
diamond films and the boron ion implanted films exhibit similar hillock morphologies on (100) crystal faces and these surface
features are formed during the deposition process; (b) boron ion implantation does not cause a discernible increase in surface
roughness; (c) atomic flatness can be achieved on crystal faces by hydrogen plasma etching of the film surface. Scanning tunnelling
spectroscopy analysis has indicated that (a) the as-deposited diamond films and the hydrogen plasma etched diamond films possess
typical p-type semiconductor surface electronic properties; (b) the as-deposited diamond films subjected to boron implantation
exhibit surface electronic properties which change from p-type semiconducting behaviour to metallic behaviour; (c) the damage
in the boron implanted diamond films is restricted to the surface layers since the electronic properties revert to p-type
on depth profiling. 相似文献
6.
Various boron only ([B]-BEA) as well as aluminum- and boron-containing beta zeolites ([Al,B]-BEA) have been prepared and modified by ion exchange of ammonium, sodium, and nickel ions. The zeolite samples have been characterized by 11B, 27Al, and 29Si MAS as well as three of them by 11B and 27Al 3Q-MAS NMR spectroscopy. The quantitative contributions of defect-free Si(nX) (n = 2, 1, 0; X = Al, B) and Si(OH)x (x = 2, 1) sites to the NMR signal intensities were calculated from the various Si/(Al + B) ratios and relative 11B, 27Al, and 29Si NMR signal intensities using the special distribution of aluminum and boron in different periodical building units of the zeolite framework. The boron atoms are sitting exclusively in diagonal positions in the four-membered rings of [B]-BEA zeolites, while the aluminum atoms are situated both in diagonal and lone positions in the four-membered rings of [Al,B]-BEA zeolites. A higher part of boron atoms are positioned in framework-related deformed tetrahedral boron species than in lattice positions in the [B]-BEA than in the [Al,B]-BEA zeolites. All extraframework octahedral aluminum species are transformed back to lattice positions due to ion exchange from the protonated form to ammonium-, sodium-, or nickel-ions containing zeolites. Oppositely, trigonal boron leaves the zeolite structure completely during ion exchange. 相似文献
7.
Raschig rings used as a safety mechanism, to avoid critical reactions in solutions containing radioactive materials, are usually made of borosilicate glass. Since boron is the active neutron absorbing ingredient, it is important to determine the boron content in the Raschig rings at any given time. A method has been developed to determine rapidly the boron content of borosilicate glasses. Ion exchange and potentiometric measurement are used to determine boron as the tetrafluoroborate ion. The precision of the method is ±2.0 mV. The average difference between values of a wet chemical analysis and those of the potentiometric method is 7.7%. 相似文献
8.
Boron Separation by the Two—step Ion—Exchange for the Isotopic Measurement of Boron 总被引:18,自引:0,他引:18
IntroductionLargevariationsintheisotopiccompositionofboronoccurinnature .TheboronisausefultracerofthesourcesandevolutionofaqueousfluidsintheEarth’scrustandhydrosphere .1 6Owingtoimprovementsofana lyticalmethods ,7,8arapidincreasehasbeenseeninmanystudiesoft… 相似文献
9.
Gerwin Zeibig 《Mikrochimica acta》1989,99(3-6):389-397
An ion exchange batch technique is described, which allows to determine the amount of mobile boron in geological material. Boron selective ion exchange resin IRA-743 (0.5 g, effective size 0.45 mm) was slurried together with 5 g sample (grain size smaller than 0.04 mm) at 70 °C in aqueous solution. After separating resin and suspension by sieving, elution was done in columns with 3N HCl. Boron was determined in the eluates by ICP-AES. Possible corrections for the iron interferences on the boron emission lines are discussed. The mobile boron content in the investigated shallow marine sedimentary rocks ranged between 5 and 10% of the total. It must be assumed that most of the boron in the shales is fixed in the lattice of the minerals.Presented in part at the 1989 European Winter Conference on Plasma Spectrochemistry, Reutte, Austria 相似文献
10.
有机硼化合物中硼原子空的pπ轨道使其作为路易斯酸能够选择性的结合氟离子,其与氟离子的结合破坏了硼中心与芳香取代基的pπ-π共轭,引起有机硼化合物光物理性质的变化。因此,有机硼化合物能够用作高选择性的氟离子化学传感器材料。本文从具有三芳基硼结构及硼酸或硼酸酯结构的这两类有机硼化合物出发,综述了它们在氟离子化学传感器领域的研究进展。 相似文献
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There is need for a rapid method for the determination of moderate amounts of boron in titanium alloys. In this paper a method is proposed which uses ion exchange. The method is applicable to titanium alloys containing 0.025 to 1 per cent. boron. One or two grams of the sample are dissolved in hydrochloric acid, and the titanium and boron are oxidized with nitric acid. The bulk of the titanium is removed by a cation exchanger. A calcium carbonate separation is made to remove the residual titanium and adjust the acidity. The boron is then titrated with sodium hydroxide, after the addition of mannitol. None of the elements found in commercial titanium alloys interferes with the method. 相似文献
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J. E. Riley Jr. R. M. Lindstrom 《Journal of Radioanalytical and Nuclear Chemistry》1987,109(1):109-115
Major levels of boron in borosilicate glasses have been determined nondestructively by neutron activation analysis. In contrast to chemical methods for determining boron as a major component, the described nuclear method has few interferences and does not require chemical separation of boron prior to its quantitation. The effects of neutron self-shielding by boron (1 to 8% by weight) are examined, minimized by dilution of powdered samples with high purity graphite, and circumvented by comparative analyses. Results of the analysis of a series of glasses with increasing boron composition are 1.150±.005% and 7.766±.035% for the low and high members of the series. Accuracy of these results depends upon comparative analyses with the certified Standard Reference Material, SRM 93a (3.89±0.02% B). Once analyzed, the glasses are useful as secondary standards for alpha track counting, and also ion and electron microprobe analyses of glasses. 相似文献
15.
We succeeded in the synthesis of the double-tailed boron cluster lipids 4a-c and 5a-c, which have a B12H11S moiety as a hydrophilic function, by S-alkylation of B12H11SH (BSH) with bromoacetyl and chloroacetocarbamate derivatives of diacylglycerols for a liposomal boron delivery system on neutron capture therapy. Calcein encapsulation experiments revealed that the liposomes, prepared from the boron cluster lipid 4b, DMPC, PEG-DSPE, and cholesterol, are stable at 37 degrees C in FBS solution for 24 h. [reaction: see text]. 相似文献
16.
近年来,三芳基硼烷在氟离子和氰根离子检测方面的应用受到了越来越广泛的关注.由于具有空的pπ轨道,三芳基硼烷可作为路易斯酸通过路易斯酸-碱相互作用实现对氟离子和氰根离子(路易斯碱)的高选择性检测.硼原子与氟离子或氰根离子的结合破坏了硼中心与芳香取代基的pπ-π共轭,引起三芳基硼烷光物理性质的变化.另外,三芳基硼烷具有优异的发光和载流子传输性质,已被广泛应用于有机电致发光领域,成为一类非常重要的有机光电材料.本文总结了近年来报道的三芳基硼烷的结构特点、构效关系以及在阴离子传感和有机电致发光显示器件中的应用,并在此基础上提出了三芳基硼烷在研究和应用中尚待解决的问题,展望了这类材料的应用前景. 相似文献
17.
A study has been made on the formation and the properties of boron carbonnitride (BCN) thin films. The BCN films were produced by ion beam assisted deposition, in which boron and carbon were deposited by electron beam heating and nitrogen was supplied by ion implantation simultaneously. The mechanical properties of BCN films were measured using a ultra micro hardness tester and a friction tester. The atomic ratio and the structure of BCN thin films were estimated by means of X-ray photoelectron spectroscopy, laser Raman spectroscopy and Fourier transform infrared spectroscopy. As preliminary results, it was found that the BCN films are higher in hardness and lower in friction coefficient than diamond-like carbon (DLC) films. The mechanical properties are discussed with the relation of surface composition and structure. 相似文献
18.
In background electrolyte (BGE) with the optimal methanol concentration of 30% (v/v), the ion with -NCS group bonded to a cluster boron atom exhibits the strongest interaction with alpha-cyclodextrin and the highest separation selectivity. Interaction of ions with alkyl or thioalkyl group weakens with the increasing substituent size. The ion with phenyl group exhibits the weakest interaction. Bonding of a group to boron atom weakens the ion interaction with alpha-cyclodextrin. Second substituent further weakens the interaction with alpha-cyclodextrin. Separation efficiency is lower at the presence of alpha-cyclodextrin than at its absence. This separation efficiency loss, amounts up to 90%. 相似文献
19.
Chunsheng Tian Stefan Gara Gerhard Hobler Gerhard Stingeder 《Mikrochimica acta》1992,107(3-6):161-169
The axial channeling behaviour of boron implants in <100>, <110> and <111> silicon wafers is investigated by SIMS. Large differences of channeling characteristics such as channeled projected range (the projected range of channeled ions or channeling peak) and the fraction of channeled to implanted ions are observed among the three major crystal orientations. Within the critical angle, the channeling behaviour is very sensitive to the incidence beam angle with respect to crystal orientations. SIMS measurements are performed at different positions along several critical directions over a whole wafer. Well channeled profiles with an incidence beam angle to crystal orientations of 0 ° are obtained for each ion implantation energy and orientation. The results are used to test various models of ion implantation by simulation. A 3-parameter model for electronic stopping power of boron in silicon was proposed. 相似文献
20.
FaQiangLI BaoPingLING PeiHuaMA 《中国化学快报》2004,15(11):1353-1356
A novel method for removing boron with ion exchange resin from residual brines tomanufacture boron-free magnesia is described. The concentration of boron in the target magnesiamanufactured thereby from Qinghai salt lakes is lower than 5 μg/g, and the typical D50 size ofproduct is 10.625 μm. 相似文献