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Two magnetic regimes in doped ZnO corresponding to a dilute magnetic semiconductor and a dilute magnetic insulator 总被引:1,自引:0,他引:1
Behan AJ Mokhtari A Blythe HJ Score D Xu XH Neal JR Fox AM Gehring GA 《Physical review letters》2008,100(4):047206
Films of ZnO doped with magnetic ions Mn and Co and, in some cases, with Al have been fabricated with a very wide range of carrier densities. Ferromagnetic behavior is observed in both insulating and metallic films, but not when the carrier density is intermediate. Insulating films exhibit variable range hopping at low temperatures and are ferromagnetic at room temperature due to the interaction of the localized spins with static localized states. The magnetism is quenched when carriers in the localized states become mobile. In the metallic (degenerate semiconductor) range, robust ferromagnetism reappears together with very strong magneto-optic signals and room temperature anomalous Hall data. This demonstrates the polarization of the conduction bands and indicates that, when ZnO is doped into the metallic regime, it behaves as a genuine magnetic semiconductor. 相似文献
3.
Diluted magnetic semiconductors (DMS) are mixed semiconducting crystals whose lattice is made up in part of substitutional magnetic ions. Cd1−xMnxTe and Hg1−xMnxTe are examples of such materials. Their structural and band parameters can be “tuned” by composition over a wide range. They can thus be exploited in situations completely similar to those involving Ga1−xAlxAs. Using molecular beam epitaxy, we have grown Cd1−xMnxTe superlattices with alternating Mn content, having up to 150 layers, with layer thickness ranging from 50 to 100 Å. The superlattice structure is clearly revealed by transmission electron microscopy and by zone-folding of the phonon spectrum observed in Raman scattering. Photoluminescence observed on Cd1−xMnxTe superlattices is several orders of magnitude greater than that from a Cd1−xMnxTe film with uniform Mn content, or from bulk Cd1−xMnxTe specimens. The presence of localized magnetic moments in DMS results in a strong exchange interaction between these moments and band electrons. This in turn leads to gigantic Zeeman splittings of impurity states, exciton levels, Landau levels, and the bands themselves. Zeeman splittings as large as 20 meV (which in non-magnetic semiconductors would require unrealistic megagauss fields) are easily achieved in DMS in fields of several kilogauss. Since the magnitude of this exchange-induced splitting in DMS can be comparable to the binding energies and to the minigaps encountered in multiple quantum wells, DMS superlattices hold promise of a host of novel effects of both fundamental and applied interest. 相似文献
4.
Goennenwein ST Wassner TA Huebl H Brandt MS Philipp JB Opel M Gross R Koeder A Schoch W Waag A 《Physical review letters》2004,92(22):227202
We show that upon exposure to a remote dc hydrogen plasma, the magnetic and electronic properties of the dilute magnetic semiconductor Ga1-xMnxAs change qualitatively. While the as-grown Ga1-xMnxAs thin films are ferromagnetic at temperatures T less, similar 70 K, the samples are found to be paramagnetic after the hydrogenation, with a Brillouin-type magnetization curve even at T=2 K. Comparing magnetization and electronic transport measurements, we conclude that the density of free holes p is significantly reduced by the plasma process, while the density of Mn magnetic moments does not change. 相似文献
5.
V.A. Ivanov E.A. UgolkovaO.N. Pashkova V.P. SanyginA.G. Padalko 《Journal of magnetism and magnetic materials》2006
Spintronics materials may be classified under concentrated magnetic semiconductors, semimetals and half-metals, semimagnetic semiconductors, and dilute magnetic semiconductors (DMS). The nature of ferromagnetism, that occurs in p-type DMS with an increase in the transition metal content, is governed by the proposed kinematic exchange involving the kinetic energy gain of the heavy hole carriers caused by their hybridization with 3d electrons of impurities. The synthesis of DMS (In,Mn)Sb is proposed on the basis of hint at its TC from kinematic mechanism. The effect of the dimensionality-driven TC increase is derived for spintronics materials such as delta-doped DMS (DDMS) and DMS heterostructures. The state-of-the-art in the field of synthesis and research of “new” DMS with announced “high TC” is also outlined with particular attention to chalcopyrite-based systems. 相似文献
6.
We investigate quantum size effect on the spin-dependent shot noise in the diluted magnetic semiconductor (DMS)/semiconductor heterostructure with a nonmagnetic semiconductor (NMS) barrier in the presence of external magnetic and electric fields. The results demonstrate that the NMS barrier plays a quite different role from the DMS layer in the electron transport process. It is found that spin-down shot noise shows relatively regular oscillations as the width of DMS layer increases, while the spin-up shot noise deceases monotonically. However, as the width of NMS layer increases, the spin-down shot noise displays irregular oscillations at first and then decreases while the spin-up shot noise decreases at a quite different rate. The results indicate that the shot noise can be used as a sensitive probe in detecting material type and its size. 相似文献
7.
采用基于同步辐射技术的X射线光电子能谱(XPS)与X射线吸收谱(XAS)测试由金属有机化学气相沉积(MOCVD)技术制备的不同Mn掺杂浓度的稀磁半导体GaMnN薄膜的电子结构,探究Mn掺杂浓度对磁性原子Mn周围的局域环境和电子态等方面的影响,并阐述材料铁磁性变化的机理. XPS和XAS图谱分析表明:Mn2+和Mn3+共存于薄膜样品内,样品D中Mn2+占比高达70%-80%,N空位随Mn掺杂浓度增加而增多且N空位能够使空穴浓度降低,导致Mn 3d和N 2p轨道间的相互交换作用减小,从而减弱体系铁磁性.此外,Mn不同的掺杂浓度会影响GaMnN薄膜p-d耦合杂化能力的强弱,当掺Mn 1.8%时具有较强的p-d耦合杂化能力. 相似文献
8.
We present an Anderson-type model Hamiltonian with exchange coupling between the localized spins and the confined holes in the quantum dots to study the ferromagnetism in diluted magnetic semiconductor (DMS) quantum dot arrays embedded in semiconductors. The hybridization between the quantum-confined holes in the quantum dots and the itinerant holes in the semiconductor valence band makes possible hole transfer between the DMS quantum dots, which can induce the long range ferromagnetic order of the localized spins. In addition, it makes the carrier spins both in the quantum dots and in the semiconductors polarized. The spontaneous magnetization of the localized spins and the spin polarization of the holes are calculated using both the Weiss mean field approximation and the self-consistent spin wave approximation, which are developed for the present model.Received: 17 Mars 2003, Published online: 30 January 2004PACS:
75.75. + a Magnetic properties of nanostructures - 75.30.Ds Spin waves - 75.50.Dd Nonmetallic ferromagnetic materials - 75.50.Pp Magnetic semiconductors 相似文献
9.
A. A. Shokri 《The European Physical Journal B - Condensed Matter and Complex Systems》2006,50(3):475-481
Theoretical studies on spin-dependent transport in magnetic tunnel
heterostructures consisting of two diluted magnetic semiconductors
(DMS) separated by a nonmagnetic semiconductor (NMS) barrier, are
carried in the limit of coherent regime by including the effect of
angular dependence of the magnetizations in DMS. Based on
parabolic valence band effective mass approximation and
spontaneous magnetization of DMS electrodes, we obtain an
analytical expression of angular dependence of transmission for
DMS/NMS/DMS junctions. We also examine the dependence of spin
polarization and tunneling magnetoresistance (TMR) on barrier
thickness, temperature, applied voltage and the relative angle
between the magnetizations of two DMS layers in GaMnAs/GaAs/GaMnAs
heterostructures. We discuss the theoretical interpretation of
this variation. Our results show that TMR of more than 65% are
obtained at zero temperature, when one GaAs monolayer is used as a
tunnel barrier. It is also shown that the TMR decreases rapidly
with increasing barrier width and applied voltage; however at high
voltages and low thicknesses, the TMR first increases and then
decreases. Our calculations explain the main features of the
recent experimental observations and the application of the
predicted results may prove useful in designing nano spin-valve
devices. 相似文献
10.
《Superlattices and Microstructures》2001,29(3):217-223
The results of empirical pseudopotential calculations for the semiconductor compound Cd1 − xMnxTe are presented. The effective electron and hole masses obtained from the pseudopotential calculations are then employed in an envelope function approximation, using two different effective mass Hamiltonians to evaluate the transition energies of the excitonic ground state in CdTe– Cd1 − xMnxTe quantum wells of variable width. It is shown that in non-magnetic systems it is not possible to utilize exciton energies alone to either distinguish between different model Hamiltonians or to quantify the interface roughness. However, it is shown that the latter can be quantified in magnetic systems via the resulting Zeeman effect. 相似文献
11.
Local structures of Mn in dilute magnetic semiconductor ZnMnO 总被引:1,自引:0,他引:1
Wei Xu Yingxue Zhou Xinyi Zhang Dongliang Chen Tao Liu Shiqiang Wei 《Solid State Communications》2007,141(7):374-377
The local structures of Mn atoms in (Zn, Mn)O have been investigated by extended x-ray absorption fine structure (EXAFS). For samples with lower Mn concentrations (<11%), EXAFS results show that the majority of Mn atoms are incorporated at Zn substitutional sites. Ferromagnetic behavior has been observed in those ZnMnO samples. It is the direct evidence to suppose that the ferromagnetism in (Zn, Mn)O is not due to Mn-related secondary phases but is intrinsic. When the Mn concentration is increased to 20% or higher, the EXAFS simulation shows the formation of MnO secondary phases and the films show a change from ferromagnetic (FM) to antiferromagnetic (AFM) state. We suggest that Mn-related secondary phases might be responsible for the transformation from FM to AFM state. 相似文献
12.
Energy of a bound polaron in a magnetic field in asymmetric polar semiconductor heterostructures 总被引:2,自引:0,他引:2
Zhi-jie Wang Yong-gang Weng Jun-jie Shi Zi-xin Liu Shao-hua Pan 《Zeitschrift für Physik B Condensed Matter》1997,104(2):227-234
In this paper, a new modified Hamiltonian of a polaron bound to a donor impurity in asymmetric step quantum wells (QWs) in the presence of an arbitrary magnetic field is given, in which the coupling of an electron with confined bulk-like LO phonons, half-space LO phonons and interface phonon modes is included. Especially, the interaction of the impurity with all possible optical-phonon modes is also considered. The ionization energy of a bound polaron in a magnetic field for asymmetric step QWs are studied by using a modified Lee-Low-Pines (LLP) variational method. The effects of the finite electronic confinement potential and the subband nonparabolicity are also considered. The relative importance of the donor impurity located at the well and the step is analyzed. Our results show the interaction between the impurity and the phonon field in screening the Coulomb interaction has a significant influence on the binding energy of bound polaron. The influence of subband non-parabolicity is appreciable on the bound polaron effects for the narrow well. The binding energy of bound polaron given in this paper are excellent agreement with the experimental measurement. 相似文献
13.
The electronic structure and magnetic properties of Mn-doped Ge, GaAs, and ZnSe nanocrystals are investigated using real space ab initio pseudopotentials constructed within the local spin-density approximation. The ferromagnetic and half-metallicity trends found in the bulk are preserved in the nanocrystals. However, the Mn-related impurity states become much deeper in energy with decreasing nanocrystalline size, causing the ferromagnetic stabilization to be dominated by double exchange via localized holes rather than by a Zener-like mechanism. 相似文献
14.
利用X 射线衍射(XRD)和X射线吸收精细结构(XAFS)方法研究了磁控共溅射方法制备的MnxGe1-x薄膜样品的结构随掺杂磁性原子Mn含量的变化规律.XRD结果表明,在Mn的含量较低(7.0%)的Mn0.07Ge0.93样品中,只能观察到对应于多晶Ge的XRD衍射峰,而对Mn含量较高(25.0%, 36.0%)的Mn0.25Ge0.75和Mn关键词:
磁控溅射
XRD
XAFS
xGe1-x稀磁半导体薄膜')" href="#">MnxGe1-x稀磁半导体薄膜 相似文献
15.
M. M. Otrokov S. A. Ostanin A. Ernst V. M. Kuznetsov E. V. Chulkov 《Physics of the Solid State》2010,52(8):1680-1687
This paper reports on the results of ab initio calculations of the electronic and magnetic properties of Si digital heterostructures doped with a Fe monolayer of the substitutional
or interstitial type. It has been revealed that, after the structural relaxation, heterostructures of both types exhibit a
two-dimensional metallic behavior and a ferromagnetic ordering in the range of Si spacer thicknesses up to 19 atomic layers.
The magnetization and spin polarization at the Fermi level for the heterostructures with an Fe monolayer of the substitutional
type are two times higher than those for the system with an Fe monolayer of the interstitial type. 相似文献
16.
V. A. Kukushkin 《Journal of Experimental and Theoretical Physics》2008,106(3):450-458
A method for generating mid-IR radiation (λ ~ 10μm) in near-IR (λ ~1 μm) quantum-well semiconductor heterolasers has been proposed. This method is based on the formation of population inversion at a mid-IR intersubband transition as a result of the depletion of its lower level by a strong near-IR field. In contrast to the previous investigations of this problem, the inhomogeneous broadening of the noted transition (caused by the dependence of its frequency on the carrier energy) is taken into account, and it is proposed to invert it not in the entire spectral range but only in the region resonant with the mid-IR field. This approach makes it possible to significantly reduce (in comparison with the previous estimates) the threshold pump current density for initiating mid-IR generation and, as a result, hope to implement operation of the proposed laser at room temperature in the cw mode. 相似文献
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通过改变温度和磁场方向对调制掺杂的n型Hg0.82Cd0.16Mn0.02Te/Hg0.3Cd0.7Te第一类量子阱中磁性二维电子气磁阻拍频振荡进行了深入的研究,发现不仅温度的变化能够引起磁阻拍频节点位置的变化. 而且改变磁场方向,可以分别调整塞曼分裂和朗道分裂. 从对拍频的分析中,可以将依赖于磁场垂直方向的朗道能级分裂和依赖于整个磁场大小的塞曼分裂区分开来.
关键词:
磁性二维电子气
自旋分裂
塞曼分裂
拍频 相似文献
19.
Takayuki Suwa Akira Ishikawa Kazuharu Uchiyama Takashi Matsumoto Hirokazu Hori Kiyoshi Kobayashi 《Applied Physics A: Materials Science & Processing》2014,115(1):39-43
Optical near-field (ONF) phenomena observed in nanoscale systems have been applied to nano-fabrication and nano-photoelectronic devices for the last decade. Excitation transfer (ET) is an elementary process caused by ONF interaction localized at the nanoscale in real space. Recently, we have observed spin-dependent ET controlled by an external field and discovered the sign of assistance of phonons. In this work, we elucidate that the assistance of coherent phonons in ET originates from two types of mechanism: energy resonance between exciton levels renormalized by phonon effects and enhancement by phase matching between coherent oscillation of populations and phonon oscillation. This study will stimulate the development of the application of ET via a ONF to nano-photoelectronic devices. 相似文献