Structural and electrical impedance study of Pb(Sr1/3Nb2/3)O3

Lead-based ceramic Pb(Sr_1/3Nb_2/3)O₃ (PSN) is prepared by the columbite precursor method and structurally characterized using XRD. The X-ray diffraction shows a perovskite structure with cubic pyrochlore phase. Detailed studies of ε′ and ε″ of the compounds show that the compounds exhibit dielectric anomaly. Impedance spectroscopy is used to characterize the electrical behaviour. Results indicate that the relaxation mechanism of the material is temperature dependent and has dominant bulk contribution in different temperature ranges. Modulus spectroscopic data were used to gain an insight into the electrical properties of the samples and with a view to observe the relaxations in them. Frequency dependence dielectric permittivity shows typical Debye-type dielectric dispersion. Temperature-dependent DC resistivity shows that resistance decreases with the increase in temperature and follows Arrhenius behaviour in different temperature regions.     

Suppression of charge ordering phenomenon in nanocrystalline Nd0.67Ca0.33MnO3 manganite

A systematic investigation of electrical, magnetic and elastic properties was undertaken in nano and microcrystalline Nd_0.67Ca_0.33MnO₃ manganite, mainly to understand the charge ordering phenomenon. There is a clear and distinct behaviour in the electrical and magnetic properties of nano and microcrystalline samples and the observed behaviour is explained.     

Effect of annealing temperature on photoelectrochemical properties of nanocrystalline MoBi2(Se0.5Te0.5)5 thin films

Nanocrystalline MoBi₂(Se_0.5Te_0.5)₅ thermoelectric thin films have been deposited on ultrasonically cleaned glass and FTO-coated glass substrates by Arrested Precipitation Technique. The change in properties of MoBi₂(Se_0.5Te_0.5)₅ thin films were examined after annealing at the temperature 473 K for 3 h. The structural, morphological, compositional and electrical properties of thin films were characterized by X-ray Diffraction, Scanning Electron Microscopy, Energy Dispersive Spectroscopy, etc. Thermoelectric properties of the thin films have been evaluated by measurements of electrical conductivity and Seebeck coefficient in the temperature range 300–500 K. Our aim is to investigate the effect of annealing on behaviour of MoBi₂(Se_0.5Te_0.5)₅ thin films along with photoelectrochemical properties.     

Electrical properties of a-antimony selenide

This paper reports conduction mechanism in a-Sb₂Se₃ over a wide range of temperature (238 to 338 K) and frequency (5 Hz to 100 kHz). The d.c. conductivity measured as a function of temperature shows semiconducting behaviour with activation energy ΔE=0.42 eV. Thermally induced changes in the electrical and dielectric properties of a-Sb₂Se₃ have been examined. The a.c. conductivity in the material has been explained using modified CBH model. The band conduction and single polaron hopping is dominant above room temperature. However, in the lower temperature range the bipolaron hopping dominates.     

Magnetic and transport properties of bilayered manganites La1.2Sr1.8Mn2-xGaxO7（x=0,0.08）

The magnetic and electrical properties of nonmagnetic Ga +3 ion substitution for Mn site are investigated in the bilayer manganite La 1.2 Sr 1.8 Mn 2 O 7.When the Mn is substituted by Ga,the ferromagnetic property obviously weakens,the magnetic transition temperature decreases and a spin-glass behaviour occurs at low temperature.Meanwhile,doping causes the resistivity to dramatically increase,the metal-insulator transition temperature to disappear,and a greater magneto-resistance effect to occur at low temperature.These effects result from the fact that Ga substitution dilutes the magnetic active Mn-O-Mn network and weakens the double exchange interaction,and further suppresses ferromagnetic ordering and metallic conduction.     

Transport properties in the pseudobinary (Gd,Y) Al2 series

The temperature dependence of the electrical resistivity, the thermal conductivity and the thermopower of the cubic isostructural (Gd_xY_1–x)Al₂ series will be presented. The magnetic properties of this system are characterized by the existence of ferromagnetism for Gd concentrations x>0.3 while for low Gd contents cluster and spinglass behaviour is observed. The spin dependent scattering contribution to the transport phenomena has been obtained by comparing the experimental data of the magnetic compounds with those of the isostructural nonmagnetic YAl₂. For the ferromagnetic concentration range and forT>T _c (T _c =Curie temperature) we revealed a temperature independent contribution to the electrical resistivity, a contribution with a temperature variation of 1/T to the thermal resistivity and a linear temperature dependence of this part to the thermopower. These results are in good agreement with the temperature dependence calculated by solving the linearized Boltzmann equation for this type of scattering processes.     

Electrical conduction of SnBi4Se7

Polycrystalline samples of Bi₂Se₃ and stoichiometric ternary compounds in the quasi-binary system SnSe-Bi₂Se₃ were characterized by measurements of temperature and field dependence of electrical conductivity. The current density–electric field characteristics were found to be non-linear, especially when the applied electric field exceeds a certain value which is dependent on the temperature T. Furthermore, the electrical conductivity can be enhanced by the applied electric field. The characteristic length a(T) seemed to be enhanced with increasing temperature. Electrical conductivity measurements elucidated the semiconducting behaviour of both compounds, especially when the temperature of measurement exceeds a certain value for SnBi₄Se₇, and hopping and band type conduction are dominant at low and high ranges of temperature, respectively. Below 200 K, the electrical conductivity of SnBi₄Se₇ decreases with increasing temperature. Meanwhile, additional scattering and hopping seemed to characterize the behaviour of SnBi₄Se₇ due to the Sn doping of Bi₂Se₃ resulting in additional states at the Fermi level. PACS 72.20.-i; 72.15.-v     

Synthesis,X-ray,magnetic and electrical studies of substituted (Pr,Sr)MnO3 perovskites

A systematic study of the structural, magnetic and electrical properties of the manganites Pr_1-x Sr _x MnO₃(0≤ x ≤ 0.5) has been carried out. X-ray diffraction investigation shows a structural change with composition, from orthorhombic (0 ≤ x ≤ 0.2) to rhombohedral (0.25 ≤ x ≤ 0.5). The magnetic properties of Pr_1-x Sr _x MnO₃ samples could be explained on the basis of a double exchange mechanism between pairs of Mn³⁺ and Mn⁴⁺ ions. These properties are strongly dependent on the ratio of Mn³⁺/Mn⁴⁺. The maximum of the ferromagnetic transition temperature T_c is reached at x ≈ 0.35 corresponding to a value 1.85 of this ratio. The investigation of the electrical properties shows a semiconductor to metal transition as a function of temperature (0.25≤x≤0.4) with a metallic-like behaviour above a critical temperature T_p . A semiconducting-like one is observed for all the range of temperature (50–300 K) for (0 ≤ x ≤ 0.2 and x = 0.5). The evolution of activated energies with the carrier concentration has been investigated.     

Conductivity and cation distribution in CuxMg1−xFe2O4 system

The electrical conductivity and magnetization of Cu _x Mg_1{x Fe₂O₄ are measured. The electrical conductivity obeys the exponential behaviour characteristic of semiconducting materials. The activation energy in the paramagnetic region is found to be greater than that in the ferrimagnetic region. This is attributed to the change in magnetic ordering. It is observed that the plots of logQ vs 10³/T exhibit a linear relationship throughout the temperature region studied (room temperature to 1000 K). The slope of the plot changes at a particular temperature recognized as Curie temperature. These temperatures agree well with the experimentally obtained Curie temperatures using Laroia technique. Hopping of polarons mechanism is used to explain the conduction behaviour in ferrites. The magnetic moment (n_B) is calculated from the magnetization studies carried out at 78 K. The cation distribution is suggested on the basis of these magnetization data.The authors are thankful to Prof. R. N. Patil for encouragement.     

Temperature-dependent Mössbauer and dielectric studies of Mg0.95Mn0.05Fe1.0Ti1.0O4

The effect of tetravalent Ti⁺⁴ substitution in Mg_0.95Mn_0.05Fe₂O₄ on its magnetic and electrical properties has been studied using X-ray diffraction, Mössbauer spectroscopy, isothermal dc magnetization and dielectric measurements. X-ray diffraction studies have shown the structural transformation from cubic to tetragonal with the Ti⁺⁴ substitution. The Mössbauer spectra of Mg_0.95Mn_0.05Fe_1.0Ti_1.0O₄ recorded in the temperature range 20-300 K shows the presence of the magnetic as well as quadrupole interactions. The isothermal hysteresis loop infers that the system exhibits a ferrimagnetic ordering at room temperature. The Zero-field-cooled (ZFC) and field-cooled (FC) magnetization studies support ferrimagnetic ordering of Mg_0.95Mn_0.05Fe_1.0Ti_1.0O₄ at room temperature. Signatures of ferroelectric transition have been observed in the temperature range 200-300 K from dielectric measurements. The observed magnetic and dielectric behaviour indicate that this material exhibits multiferroic behaviour.     

Synthesis and characterization of β-Ni(OH)2 up grown nanoflakes by SILAR method

In this paper we report a “bottom up” approach to synthesize β-Ni(OH)₂ nanoflakes using novel successive ionic layer adsorption and reaction (SILAR) method. Ni(OH)₂ thin films have been deposited on glass substrate using aqueous alkaline nickel chloride as nickel ion source and double distilled water maintained at 353 K temperature as hydroxyl ion source. The structural, surface morphological, optical and electrical properties of films are examined. The nanocrystallinity and β-phase of Ni(OH)₂ are confirmed by X-ray diffraction and FT-IR studies. Scanning electron microscope study revealed microporous and random distribution of well up grown interlocked nanoflakes. Optical absorption studies show wide optical band gap of 3.26 eV for β-Ni(OH)₂. The electrical properties revealed that β-Ni(OH)₂ has negative temperature coefficient of resistance with p-type semiconducting behaviour. The electrochemical property studied by cyclic voltametry in 2 M KOH electrolyte solution revealed pseudo capacitive behaviour, when β-Ni(OH)₂ thin film employed as working electrode in three electrode electrochemical cell with platinum as counter electrode and saturated calomel as reference electrode. The specific capacitance of 350 F g⁻¹ is obtained with nanoflake like morphology.     

A new ferromagnetic thiospinel CuCrZrS4 with re-entrant spin-glass behaviour

A new thiospinel CuCrZrS₄ has been successfully synthesized by a solid-state chemical reaction. This CuCrZrS₄ exhibits ferromagnetic properties below the Curie temperature at T _c = 60 -2 K. The appearance of irreversible effect between field-cooled and zero-field-cooled magnetization is prominent below around 5 K in a magnetic field of less than 150 Oe. The ac susceptibility χ_AC shows a rapid decrease below about 10 K. This low magnetic-field behaviour indicates the existence of a re-entrant spin-glass phase below about 10 K. The dc magnetic susceptibility above 100 K shows Curie-Weiss behaviour with an effective magnetic moment of 3.61 μ _B, which is a little less than the spin-only value of 3.87 μ _B for the Cr³⁺ ion. The asymptotic Curie temperature θ _P is approximately 65 K, which is a little higher than T _c. The valence state is confirmed to be Cu⁺Cr³⁺Zr⁴⁺S₄ ^2? on the basis of magnetic properties. The electrical resistivity ρ shows a semiconducting temperature dependence over the temperature range from 4.2 to 280 K with an activation energy of 6.84 210^?3 eV in the higher temperature range from 50 to 283 K.     

A quantitative understanding of pressure dependent conductivity of FeSi1−xGex

A new density of states model, referred to as the Gaussian density of states, is proposed for the quantitative understanding of the electrical conductivity behaviour of FeSi Kondo insulating system. The effects of electron correlation and disorder, responsible for the physical properties of this system, are judiciously incorporated in this model. Within the framework of this model, a detailed quantitative analysis of the temperature and pressure dependent electrical conductivity data of FeSi_1−xGe_x (x=0.0, 0.05 and 0.20) reported by Awadhesh Mani et al. [Phys. Rev. B 63 (2001) 115103] has been carried out. From these analyses the complicated pressure dependence of energy gap seen experimentally in these samples could be satisfactorily rationalized.     

Transport properties in single phase superconductor Ba2YCu3O9-δ

The electrical resistivity and the thermopower are measured on the single phase superconductor Ba₂YCu₃O₉-δ (δ=2.1). The results indicate that the temperature dependences of the resistance and thermopower exhibit typical metallic behaviour, and the sample conducts via electrons at high temperatures. The behaviour of the thermopower can be described with Mott's semi-classical model. The specific heat of electrons in normal state has been estimated 780mJ/K·mole at 200K, i.e. γ=3.9mJ/K²·mole. Unusual phonon-drag effect is observed above the superconducting transition temperature T_c. Below T_c, the electrical resistivity and the thermopower all drop to zero corresponding to a superconducting ground state.     

On the use of NiO as sintering additive for BaCe0,9Y0,1O3 − α

The effect of nickel oxide addition on the densification behaviour and electrical conductivity of BaCe_0.9Y_0.1O_3 ? α (BCY10) is investigated. Small addition (4 mol%) of this sintering aid reduces the sintering temperature by 200 °C and promotes the densification. 95% of the theoretical density was reached after sintering at 1250 °C for 10 h in air. Addition of NiO has no detrimental effect on the total conductivity of BCY10 in wet hydrogen. Nevertheless, the activation energy of the recorded blocking effect is higher than that of the bulk contribution, indicating different electrical properties between grains and internal interfaces in pure and NiO doped BCY10.     

Transport properties of lead phosphate glass doped by cobalt,vanadium and chromium oxides

The electrical transport properties were investigated of a glass system of basic composition 50?mol. % Pb₃O₄–50?mol. % P₂O₅ containing CoO, Cr₂O₃ or V₂O₅ dopanys. The ac conductivity and the thermoelectric power were measured as a function of temperature. Properties such as dielectric constant, loss factor tangent and electrical conductivity are reported in the frequency range 200?Hz–100?kHz and temperature range 300–450?K. The variation in electrical conductivity with temperature was found to depend on the types of transition metal ions involved. The temperature dependence of the frequency exponent, s, was analyzed using different theoretical models. The variation of the thermoelectric power with temperature indicated the presence of more than one conduction mechanism for the investigated samples. This result was confirmed with the results of the dielectric properties at different frequencies. The introduction of cobalt ions in glass formers improves the electrical properties of non-crystalline ionic conductors.     

Mixed ion-polaron transport in lithium vanadium–molybdenum tellurite glasses

The electrical properties of mixed ion-polaron conducting vanadium tellurite glasses of the form XLi₂O·(1 − X)[0.5V₂O₅·0.5MoO₃]2TeO₂ have been studied by using the impedance spectroscopy in a wide range of temperature and composition. The obtained results confirm the existence of a transition from a typically electronic (polaronic) conductive regime when the molar fraction (X) of Li₂O is equal to 0, to an ionic conductive regime when X tends to 1. This transition is characterised by a deep minimum in the electrical conductivity of about 3 orders of magnitude. The correlated behaviour between conductivity and the mean distance between lithium ions and between vanadium ions reinforces the key idea of two independent migrating paths for both electrons and ions, respectively.     

Electrical resistivity of intercalated molybdenum disulfide

The electrical resistivity of hexagonal synthetic single crystals and natural crystals of MoS₂ intercalated with alkali metals (K, Rb and Cs) has been measured. The average room-temperature values is 0.004 ω-cm, and the best single crystal data on K_0.4MoS₂ showed at T^1.5 temperature behaviour characteristic of acoustical phonon scattering for a quasi-isotropic metal. The metallic behaviour and scattering mechanism are discussed.     

Fabrication and characteristics of high-K HfO2 gate dielectrics on n-germanium

This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated. Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.     

Electrical properties of a-Ge<Subscript>x</Subscript>Se<Subscript>100-<Emphasis Type="Italic">x</Emphasis></Subscript>

In general, the conductivity in chalcogenide glasses at higher temperatures is dominated by band conduction (DC conduction). But, at lower temperatures, hopping conduction dominates over band conduction. A study at lower temperature can, eventually, provide useful information about the conduction mechanism and the defect states in the material. Therefore, the study of electrical properties of Ge_xSe_100-x in the lower temperature region (room temperature) is interesting. Temperature and frequency dependence of Ge_xSe_{100-x (x} = 15, 20 and 25) have been studied over different range of temperatures and frequencies. An agreement between experimental and theoretical results suggested that the behaviour of germanium selenium system (Ge_xSe_100-x ) have been successfully explained by correlated barrier hopping (CBH) model.