Tunneling spin injection into single layer graphene

We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO? seeded MgO barriers. A nonlocal magnetoresistance (ΔR(NL)) of 130 Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔR(NL) vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.     

Generation and manipulation of spin current via a hybrid four-terminal single-molecule junction

We present a new device which consists of a molecular quantum dot (MQD) attached to a normal-metal, two ferromagnetic (FM), and a superconducting leads. The spin-related Andreev reflection (AR) current and the spin-dependent single-particle tunneling current through the normal-metal terminal are obtained, and it is found that the spin current exhibits the transistor-like behavior. The joint effects of the coherent spin flip and the angle between magnetic moments of the two FM leads on the spin current are also studied, these results provide the possibility to manipulate the spin current with the system parameters.     

一种菁染料－聚合物薄膜的光存存储性能

用旋涂法制备了一种菁染料－聚合物薄膜，并研究了该染料－聚合物薄膜的光谱性质和光存储性能。该染料薄膜在６６０～８３０ｎｍ波段有较强的吸收和２０％以上的反射率。在最佳实验条件下，获得了５８ｄＢ的信噪比。信噪比（ＣＮＲ）、载波信号强度（Ｃ）和薄膜反射率变化（ΔＲ）的对数（ｌｇΔＲ）成正比     

Scattering matrix for Feshbach-Villars equation for spin 0 and 1/2: Woods-Saxon potential

The Feshbach-Villars equation for spin 0 and 1/2 in the presence of Woods-Saxon potential is solved using an unified approach. The good boundary conditions for jumping potential are found and Klein tunneling and Klein paradox are discussed. The scattering matrix is constructed and the phase shifts, the transmission and reflection coefficients are deduced.     

Enhancement of charge and spin Seebeck effect in triple quantum dots coupling to ferromagnetic and superconducting electrodes

We theoretically study the thermoelectric transport properties through a triple quantum dots (QDs) device with the central QD coupled to a ferromagnetic lead, a superconducting one, and two side QDs with spin-dependent interdot tunneling coupling. The thermoelectric coefficients are calculated in the linear response regime by means of nonequilibrium Green's function method. The thermopower is determined by the single-electron tunneling processes at the edge of superconducting gap. Near the outside of the gap edge the thermopower is enhanced while thermal conductance is suppressed, as a result, the charge figure of merit can be greatly improved as the gap appropriately increases. In the same way, charge figure of merit also can be greatly improved near the outside of the gap edge by adjusting interdot tunneling coupling and asymmetry coupling of the side QDs to central QD. Moreover, the appropriate increase of the interdot tunneling splitting and spin polarization of ferromagnetic lead not only can improve charge thermopower and charge figure of merit, but also can enhance spin thermopower and spin figure of merit. Especially, the interdot tunneling splitting scheme provides a method of controlling charge (spin) figure merit by external magnetic field.     

Quantum interference of Rashba-type spin-split surface state electrons

We studied the quantum interference of electrons in the Bi (p(x), p(y)) orbital-derived j = 1/2 spin-split surface states at Bi/Ag(111)√3 × √3 surfaces of 10 monolayer thick Ag(111) films on Si(111) substrates. Surface electron standing waves were observed clearly at the energy (E) below the intersection of the two spin-split downward dispersing parabola bands (E(x)). The E dependence of the standing wave pattern reveals the dispersion as the average of the two spin-split surface bands due to the interference between |(k + Δ), ↑> and |-(k - Δ), ↑> [or (|(k - Δ), ↓>) and |-(k + Δ), ↓>] states. In contrast, it was impossible to deduce the dispersion from the standing wave pattern at E ≥ E(x) because the surface electron cannot find its backscattered state with the same spin polarization.     

Efficient spin injection and extraction in modified reverse and forward biased ferromagnetic–semiconductor junctions and low-power ultrafast spin injection devices

This paper addresses recent theoretical and experimental advances in obtaining large spin polarization in semiconductors. In particular, we describe tunneling of electrons between nonmagnetic semiconductors (S) and ferromagnets (FM) through a Schottky barrier modified by very thin heavily doped interfacial layer. It is shown that in such reverse (forward) biased FM-S junctions electrons with a certain spin projection can be efficiently injected in (extracted from) S. This occurs due to spin filtering of electrons in a tunneling process. We find conditions for most efficient extraction and accumulation of spin and show that spin polarization of electrons near the interface can, at least in principle, be made close to 100% in nondegenerate S at room temperature and certain bias voltages. Extraction of spin can proceed in degenerate semiconductors at any (low) temperature. A new class of spin valve ultrafast devices with small dissipated power is described: a magnetic sensor, a spin transistor, an amplifier, a frequency multiplier, and a square-law detector. PACS 72.25.Hg; 72.25.Mk; 72.25.Rb     

Next-to-next-to-leading-order charm-quark contribution to the CP violation parameter ϵ(K) and ΔM(K)

The observables ?(K) and ΔM(K) play a prominent role in particle physics due to their sensitivity to new physics at short distances. To take advantage of this potential, a firm theoretical prediction of the standard-model background is essential. The charm-quark contribution is a major source of theoretical uncertainty. We address this issue by performing a next-to-next-to-leading-order QCD analysis of the charm-quark contribution η(cc) to the effective |ΔS|=2 Hamiltonian in the standard model. We find a large positive shift of 36%, leading to η(cc)=1.87(76). This result might cast doubt on the validity of the perturbative expansion; we discuss possible solutions. Finally, we give an updated value of the standard-model prediction for |?(K)|=1.81(28)×10(-3) and ΔM(K)(SD)=3.1(1.2)×10(-15) GeV.     

双势阱产生正负电子对过程中的正电子波干涉与克莱因隧穿现象

通过将狄拉克场量子化并且数值求解狄拉克方程的方法研究在一维情况下双势阱激发正负电子对产生的过程.研究发现双势阱激发的正电子波在双势阱之间会出现干涉现象,过程中伴随着克莱因隧穿效应,并且在双势阱之间的距离取正电子波对应的驻波条件时,在双势阱之间会表现出驻波形式的正电子干涉波.并且驻波的出现对正负电子对的产生过程也存在相应的影响,驻波最终会通过克莱因隧穿效应衰减消失.     

Solution of DKP equation in Woods–Saxon potential

The DKP equation in the presence of Woods–Saxon potential is solved for spin 1 and spin 0. The transmission and reflection coefficients are deduced and Klein tunneling is discussed. The case of the barrier potential is deduced as a limiting case and the good boundary conditions for the jump potential are found.     

Competition between quantum spin tunneling and Kondo effect

Quantum spin tunneling and Kondo effect are two very different quantum phenomena that produce the same effect on quantized spins, namely, the quenching of their magnetization. However, the nature of this quenching is very different so that quantum spin tunneling and Kondo effect compete with each other. Importantly, both quantum spin tunneling and Kondo effect produce very characteristic features in the spectral function that can be measured by means of single spin scanning tunneling spectroscopy and allows to probe the crossover from one regime to the other. We model this crossover, and the resulting changes in transport, using a non-perturbative treatment of a generalized Anderson model including magnetic anisotropy that leads to quantum spin tunneling. We predict that, at zero magnetic field, integer spins can feature a split-Kondo peak driven by quantum spin tunneling.     

自旋极化扫描隧道显微术

自旋极化扫描隧道显微术是一种新兴的表面自旋分辨技术，文章主要介绍了自旋极化的扫描隧道显微镜和扫描隧道谱实现表面自旋分辨的原理以及在各种磁性表面研究中的应用，采用自旋极化技术的扫描隧道显微镜可以测量表面磁结构，其空间分辨可以达到原子尺度，分辨率超过其他磁显微技术，而自旋极化扫描隧道谱不但可以分辨空间精细磁畴结构，而且能研究表面态的交换劈裂，文章作者还进一步提出了利用自旋极化扫描隧道显微镜实现自旋注入的设想。     

Thermoelectric transport and spin density of graphene nanoribbons with Rashba spin–orbit interaction

In the present paper, we have theoretically investigated thermoelectric transport properties of armchair and zigzag graphene nanoribbons with Rashba spin–orbit interaction, as well as dephasing scattering processes by applying the nonequilibrium Green function method. Behaviors of electronic and thermal currents, as well as thermoelectric coefficients are studied. It is found that both electronic and thermal currents decrease, and thermoelectric properties been suppressed, with increasing strength of Rashba spin–orbit interaction. We have also studied spin split and spin density induced by Rashba spin–orbit interaction in the graphene nanoribbons.     

Spin polarized tunneling at finite bias

A mesoscopic spin valve is used to determine the dynamic spin polarization of electrons tunneling out of and into ferromagnetic (FM) transition metals at finite voltages. The dynamic polarization of electrons tunneling out of the FM slowly decreases with increasing bias but drops faster and even inverts with voltage when electrons tunnel into it. A free-electron model shows that in the former case electrons originate near the Fermi level of the FM with large polarization whereas in the latter, electrons tunnel into hot electron states for which the polarization is significantly reduced. The change in sign is ascribed to the matching of the electron wave function inside and outside the tunnel barrier.     

Nonequilibrium spin accumulation and tunneling magnetoresistance in a ferromagnet/semiconductor/ferromagnet double tunnel junction

Taking into account the nonequilibrium spin accumulation, we apply a quantum-statistical approach to study the spin-polarized transport in a two-dimensional ferromagnet/semiconductor/ferromagnet (FM/SM/FM) double tunnel junction. It is found that the effective spin polarization is raised by increasing the barrier strength, resulting in an enhancement of the tunneling magnetoresistance (TMR). The nonequilibrium spin accumulation in SM may appear in both antiparallel and parallel alignments of magnetizations in two FMs, in particular for high bias voltages. The effects of spin accumulation and TMR on the bias voltage are discussed.     

Enhanced spin polarization in an asymmetric magnetic graphene superlattice

The authors investigate the spin-resolved transport through an asymmetrical magnetic graphene superlattice (MGS) consisting of the periodic barriers with abnormal one in height. To quantitatively depict the asymmetrical MGS, an asymmetry factor has been introduced to measure the height change of the abnormal barrier. It is shown that the spin filter effect is strongly enhanced by the barrier asymmetry both in the Klein and the classical tunneling regimes. In the presence of abnormal barrier, the conductance with certain spin direction is suppressed with respect to different tunneling regimes, and thus high spin polarization with opposite sign can be achieved.     

The Andreev tunneling behaviors in the FM/QD/SC system with intradot spin-flip scattering

The resonant behaviors of spin-dependent linear AR conductance, the spin-dependent AR current, the electron occupation number and spin accumulation in the QD are theoretically investigated in the FM/QD/SC system with intradot spin-flip scattering. The novel resonant behaviors of spin-dependent AR conductance versus Fermi energy are revealed, which are rather different from the AR conductance versus the dot's energy level case [Cao et al., Phys. Rev. B 70 (2004) 235341]. It is proved that the split of the resonant peak can be induced by the competition between the coupling strengths to the FM and SC leads, the intradot spin-flip scattering, and the gate voltage. The number, the widths, and the distance of the peaks could be controlled by tuning the relevant parameters. The resonance of AR current can take place only when the energy level of QD lines up with the right lead chemical potential and blows the left lead chemical potential. The magnitude of the resonant AR current depends on the number of resonant levels involved in the Andreev tunneling process. It is also proved that the spin-flip scattering can suppress the spin accumulation effectively, and induce the spin polarization of AR conductance and AR current simultaneously. The results make us understand better the fundamental in this system, and are useful for the design of spintronic devices.     

Valley splitting and anomalous Klein tunneling in borophane-based n-p and n-p-n junctions

We analytically investigate the transport properties of electron in borophane-based n-p and n-p-n junctions. When the electron beam in n region go through the n-p junction, the beam will be split into two valley-dependent beam in p region. This comes from the valley-dependent refraction angle induced by the anisotropic band structure of borophane. Interestingly, the behavior of valley splitting can be generated in a borophane-based n-p junction naturally without any external modulation methods. Generally, the Klein tunneling is described as the perfect transmission at a zero incident angle of electron regardless of the width and height of potential barrier. However, in a borophane-based n-p-n junction, the anomalous Klein tunneling, i.e., the perfect transmission exists at a nonzero incident angle, is found due to the anisotropic band structure of borophane. Our work designs an alternative valley splitter and provides an insight into the understanding of the Klein tunneling.     

Recent progresses of quantum confinement in graphene quantum dots

Graphene quantum dots (GQDs) not only have potential applications on spin qubit, but also serve as essential platforms to study the fundamental properties of Dirac fermions, such as Klein tunneling and Berry phase. By now, the study of quantum confinement in GQDs still attract much attention in condensed matter physics. In this article, we review the experimental progresses on quantum confinement in GQDs mainly by using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Here, the GQDs are divided into Klein GQDs, bound-state GQDs and edge-terminated GQDs according to their different confinement strength. Based on the realization of quasi-bound states in Klein GQDs, external perpendicular magnetic field is utilized as a manipulation approach to trigger and control the novel properties by tuning Berry phase and electron–electron (e–e) interaction. The tip-induced edge-free GQDs can serve as an intuitive mean to explore the broken symmetry states at nanoscale and single-electron accuracy, which are expected to be used in studying physical properties of different two-dimensional materials. Moreover, high-spin magnetic ground states are successfully introduced in edge-terminated GQDs by designing and synthesizing triangulene zigzag nanographenes.