金属氧化膜电阻温度系数的测定

采用由传感器AD590组成的水浴恒温箱测得不同温度下金属氧化膜电阻的阻值，通过大量的实验数据分析各种金属氧化膜电阻阻值与温度的关系，分析表明，阻值与温度之间呈线性关系，通过直线拟舍，得到电阻阻值与温度的关系式，通过关系式求得金属氧化膜电阻器的温度系数，建立阻值与温度的数学模型，这样就能得到不同温度下各种金属氧化膜电阻的理论预测值。     

Directional Reconstruction of Iron Oxides to Active Sites for Superior Water Oxidation

Rationally constructing and manipulating the in situ formed catalytically active surface of catalysts remains a tremendous challenge for a highly efficient water electrolysis. Herein, an anion and cation co-induced strategy is presented to modulate in situ catalyst dissolution-redeposition and to achieve the directional reconstruction of Zn and S co-doped Fe₂O₃ and Fe₃O₄ on iron foams (Zn,S-Fe₂O₃-Fe₃O₄/IF), for oxygen evolution reaction (OER). Benefiting from Zn, S co-doping and the presence of Fe₃O₄, a directionally reconstructed surface is obtained. The Fe₂O₃ in the Zn,S-Fe₂O₃-Fe₃O₄/IF is directionally reconstructed into FeOOH (Zn,S-Fe₃O₄-FeOOH/IF), in which the S leaching promotes the Fe dissolution and the Zn co-deposition regulates the activity of the obtained FeOOH. Moreover, the presence of Fe₃O₄ provides a stable site for FeOOH deposition, and thus causes more FeOOH active components to be formed. Directionally reconstructed Zn,S-Fe₃O₄-FeOOH/IF outperformes many state-of-the-art OER catalysts and demonstrates a remarkable stability. The experimental and density functional theory (DFT) calculation results show that the introduction of Zn-doped FeOOH with abundant oxygen vacancies through directional reconstruction has activated lattice O atoms, facilitating the OER process on the heterojunction surface following the lattice oxygen mechanism (LOM) pathway. This work makes a stride in co-induced strategy modulating directional reconstruction.     

TiAl基合金表面激光重熔MCrAlY涂层组织结构及抗氧化性

采用等离子喷涂工艺在TiAl基合金表面制备NiCoCrAl-Y2O3涂层.并用激光重熔工艺对涂层进行处理.用SEM、XRD对激光重熔前后的试样进行检测,分析了涂层的微观组织结构以及物相成分组成,同时对涂层进行高温氧化试验.结果表明,等离子喷涂后的涂层组织较致密,但仍存在孔洞等缺陷.激光重熔后涂层的组织结构进一步均匀、致密,晶粒得到细化.激光重熔过程中,涂层中Al元素上浮,并部分氧化生成Al2O3相.这两方面均可有效"阻碍"氧离子向内扩散和金属阳离子向外扩散,使重熔后涂层的高温抗氧化性能得到较大地改善.     

Multisite Synergism-Induced Electron Regulation of High-Entropy Alloy Metallene for Boosting Alkaline Hydrogen Evolution Reaction

Designing the high-entropy alloys (HEAs) electrocatalysts with controllable nanostructures is of great significance for the development of efficient alkaline hydrogen evolution reaction (HER) electrocatalysts. In this study, an ultrathin HEA-PdPtRhIrCu metallene with abundant lattice distortions and defects is prepared via a facile one-step hydrothermal method. The synthesized HEA-PdPtRhIrCu metallene exhibits superior HER performance in a 1 m KOH solution, where the required overpotential of HEA-PdPtRhIrCu metallene is only 15 mV to reach a current density of −10 mA cm⁻² while possessing a low Tafel slope for 37 mV dec⁻¹. Density functional theory calculations further prove that the synergistic effect of the five elements can optimize the electronic structure to enhance the HER activity of the catalysts. In particular, the strong coupling effect and the strong bonding arising from the interaction between the multi-metal components can facilitate the electron transfer of the surface and high electroactivity. Moreover, the optimized Pt electronic structure in HEA-PdPtRhIrCu metallene promotes the optimal Pt H binding at the Pt site, thus promoting HER performance.     

合金元素对Sn-Zn基无铅钎料高温抗氧化性的影响

研究了不同微量合金元素对Sn-Zn基无铅钎料高温抗氧化性的影响。钎料在液态下的表面颜色变化以及热重分析表明,Al、Cr能明显改善Sn-Zn基钎料的抗氧化性能。通过俄歇能谱深度剖析和X射线衍射分析探讨了合金元素的抗氧化机理:Al和Cr在钎料表面或亚表面富集,形成阻挡层,抑制了钎料的氧化。比较了合金元素对Sn-Zn基钎料润湿性能的影响,结果表明Al的加入不利于钎料的铺展。通过实验得出结论:Cr是一种比Al更具有吸引力的Sn-Zn基钎料的高温抗氧化合金元素。     

低频大功率三极管快速筛选技术的应用

利用快速筛选技术对低频大功率三极管快筛是一种经济、有效的筛选手段，它可以有效地剔除热敏参数不良的器件，保证整批器件的可靠性。     

ZnO陶瓷材料的负阻特性

介绍了ＺｎＯ陶瓷的负阻特性，主要研究了ＭｎＯ２掺杂和Ｎｉ２Ｏ３掺杂对ＺｎＯ陶瓷负阻特性的影响。     

Evaluation and Failure Mechanism of High-Temperature Microwave Absorption for Heterogeneous Phase Enhanced High-Entropy Transition Metal Oxides

Herein, magnetic and conductive heterogeneous nickel-matrix alloy is in situ constructed in the high-entropy transition metal oxide matrix using a reductive circumstance, to form the high-temperature resistant microwave absorbers. The ohmic, dielectric polarization and magnetic loss are enhanced synergistically, prompting the improvement of loss capacity and optimization of the impedance matching feature. The composites achieve over 90% absorption in the whole Ku band with a thickness of just 1.55 mm at room temperature. Moreover, the in situ high temperature measured microwave absorption keeps stable till 500 °C. In situ characterizations are employed to investigate the evolution processes and failure mechanisms. As the temperature elevates, there are three distinct stages. The absorber goes through minor chemical reactions, consequent elimination of magnetic loss, and a rapid increase in electroconductivity. These behaviors culminate in impedance mismatch, finally worsening its absorption performance at elevated temperatures. The proposed evaluation process reveals how the above irreversible and reversible behaviors affect high-temperature microwave absorption, providing an effective theoretical basis for the design of high-temperature microwave absorbers.     

激光熔敷Ti5Si3/NiTi金属间化合物复合材料涂层组织与高温抗氧化性能研究

以Ti—Si—Ni混合合金粉末为原料,利用激光熔敷技术,在高温、高强钛合金BT9表面制得了以金属间化合物Ti5Si3为强化相、以金属间化合物NiTi为基体的金属间化合物快速凝固高温抗氧化复合材料涂层。在1000℃恒温氧化50小时的试验条件下测试了涂层的抗氧化性及氧化动力学曲线,分析了复合材料涂层及氧化膜的显微组织结构及相组成。     

快速热氧化制备超薄GeO2及其性质

超薄氧化锗对钝化Ge MOSFET器件中高介电常数栅介质与Ge界面具有重要的意义。通过研究400～550℃下快速热氧化锗制备氧化锗的过程及其性质,发现在一定温度下较短的氧化时间内,氧化锗的厚度随氧化时间的增加呈明显的两段线性关系。在开始阶段,氧化锗具有高的生长速率;当氧化锗厚度达到一定值(与温度相关)时,氧化速率变慢,与Deal-Grove氧化模型中的线性生长速率基本一致。X射线光电子能谱(XPS)测试结果表明氧化锗中存在不同价态的Ge,且随着氧化时间的增加,氧化锗的氧化程度逐渐提高。在550℃下氧化180 s形成的氧化锗用于Ge-MOS结构,C-V特性表明在禁带中央处获得了较小的界面态密度,达到1.7×1012 cm-2eV-1。     

Unleashing the Potential of Sodium-Ion Batteries: Current State and Future Directions for Sustainable Energy Storage

Rechargeable sodium-ion batteries (SIBs) are emerging as a viable alternative to lithium-ion battery (LIB) technology, as their raw materials are economical, geographically abundant (unlike lithium), and less toxic. The matured LIB technology contributes significantly to digital civilization, from mobile electronic devices to zero electric-vehicle emissions. However, with the increasing reliance on renewable energy sources and the anticipated integration of high-energy-density batteries into the grid, concerns have arisen regarding the sustainability of lithium due to its limited availability and consequent price escalations. In this context, SIBs have gained attention as a potential energy storage alternative, benefiting from the abundance of sodium and sharing electrochemical characteristics similar to LIBs. Furthermore, high-entropy chemistry has emerged as a new paradigm, promising to enhance energy density and accelerate advancements in battery technology to meet the growing energy demands. This review uncovers the fundamentals, current progress, and the views on the future of SIB technologies, with a discussion focused on the design of novel materials. The crucial factors, such as morphology, crystal defects, and doping, that can tune electrochemistry, which should inspire young researchers in battery technology to identify and work on challenging research problems, are also reviewed.     

Rapid Combinatorial Synthesis and Chromatography Based Screening of Phosphorescent Iridium Complexes for Solution Processing

This work reports the combinatorial synthesis and screening of phosphorescent iridium complexes as solution processable emitters for OLEDs. The approach taken here allows for the rapid synthesis, isolation, spectroscopic characterization and identification of the libraries based on chromatographic methods. Subsequent analysis of the irradiation induced degradation provides insight on the stability of the complexes under continuous excitation. The method is versatile and can easily be applied to other metal complexes or organic dyes for various applications, e.g., in electroluminescence, photovoltaics and sensing.     

PTC陶瓷限流元件耐流性能研究

研究程控电话交换机过流保护用ＰＴＣ陶瓷限流元件经受大的工频电流冲击的能力与材料电阻率、居里温度及温度系数等参数的关系，提出解决该课题的工艺控制和配料上值得注意的问题     

激光熔凝NiAl/纳米Al2O3化学复合镀层抗高温氧化性能

采用大功率连续横流CO2激光对化学复合镀NiAl/纳米Al2O3复合镀层进行激光熔凝处理,并对熔凝层的抗高温氧化性能进行研究。采用X射线衍射仪(XRD)、扫描电镜(SEM)和能谱仪(EDS)等分别对高温氧化前后的表面形貌、物相组织和元素组成进行表征分析。与复合镀层和基体试样相比,激光熔凝后表面抗高温氧化性能明显提高,这一方面与激光熔凝镀层中的金属间化合物NiAl2O4、Ni0.77AlFe0.23在800℃时具有良好的抗高温氧化性有关,另一方面是由于激光熔凝后镀层表面形成了连续致密的氧化膜。     

Al-C-Ni组分的变化对Al-C-Ni与ITO层接触电阻的影响

为克服大尺寸显示面板中反应时间的延迟问题,采用低阻栅线是十分有益的,同样在小尺寸面板上也存在这种相互匹配的过程。然而,由于Al较高的氧化速度,铝合金和ITO材料接触性能并不太好。文章介绍了在室温ITO沉积过程中,通过增加ACX(Al-C-Ni)中Ni含量来减少ACX-ITO接触电阻。经室温ITO沉积后,接触电阻成功地减少到300Ω,而且没有ACX引起的问题出现。     

MgO掺杂对ZnO基线性电阻陶瓷性能的影响

以ZnO为基添加Al2O3和MgO制备了导电陶瓷;研究了MgO掺杂含量对ZnO陶瓷电阻率、电阻温度系数和相对密度的影响;测试分析了ZnO导电陶瓷在室温小电流时的伏安特性.结果表明,ZnO-Al2O3-MgO系陶瓷具有线性的伏-安(V-I)特性;添加MgO能增大电阻率且可改善电阻温度系数,当x(MgO) =5％时,小电流电阻率为178 Ω·cm,电阻温度系数为－1.5×10-3/℃;适量的MgO含量有利于烧结致密化.     

添加剂对Fe—Cu系陶瓷材料负阻特性的影响

文章介绍了以Ｆｅ２Ｏ３和Ｃｕ２Ｏ为主成分的陶瓷材料的负阻特性，分析论述了Ｃｏ２Ｏ３、Ｂｉ２Ｏ３以及ＭｎＯ２掺杂对Ｆｅ－Ｃｕ系陶瓷材料负阻性能的影响，实验制得负阻系数ｎ＞１０，电压Ｖｐ＞２００的负阻性能良好的陶瓷材料。     

无铅波峰焊钎料抗氧化影响的研究

研究了目前常用的Sn-0.7Cu无铅钎料在手浸锡炉和模拟波峰炉中的抗氧化情况.主要研究了微量P元素的加入对钎料抗氧化性的影响.通过钎料在液态下表面颜色变化和锡渣的产生量的比较可以发现微量P元素的加入可以提高钎料的抗氧化性能.通过比色分析发现微量P元素在钎料表面或亚表面富集,形成"阻挡层",抑制了钎料的进一步氧化.通过实验得出P的最佳质量分数为0.011%.     

用于纳米光电器件的Ti纳米氧化线的AFM加工

为利于与微电子加工工艺相结合，基于Ti氧化线的纳米电子和光电器件需要加工μm级长的Ti氧化线。偏置电压和扫描速度是AFM阳极氧化加工Ti纳米氧化线的决定因素。在温度(20℃)、相对湿度(30％)和氧气浓度(20％)基本保持不变的情况下，在不同的偏置电压和扫描速度下加工了5μm长的Ti氧化线，研究了不同偏置电压和扫描速度对Ti氧化线加工特性的作用，在偏置电压8V和扫描速度0.1μm／s条件下得到了比较理想的长Ti氧化线。     

Enhancement of Oxidation Resistance and Electrical Properties of Indium-Doped Copper Thin Films

Copper thin films with high conductivity and good resistance to electromigration can be used in advanced electronic devices. However, the poor corrosion resistance of copper must be overcome. This work elucidates the possibility of using a self-forming passivation layer to prevent copper oxidation in lightly indium-doped copper thin films deposited directly on glass substrates and annealed under various oxygen atmospheres. The resistivity of the studied film declined gradually as the film was annealed at an elevated temperature because of the grain growth of the Cu film and the precipitation of indium from the In-doped Cu thin film, as revealed by X-ray diffraction, four-point probe measurements, and transmission electron microscopy. A copper film with high indium content exhibited superior passivation when the film was annealed in an oxygen-rich ambient, but it exhibited high resistivity because of its high indium content. The electrical and passivation properties demonstrated that indium is a promising alloying element for use in copper films for future metallization structures and thin-film transistors.