The Interplay between Strain,Sn Content,and Temperature on Spatially Dependent Bandgap in Ge1−x Sn x Microdisks

Germanium–tin (GeSn) microdisks are promising structures for complementary metal–oxide–semiconductor-compatible lasing. Their emission properties depend on Sn concentration, strain, and operating temperature. Critically, the band structure of the alloy varies along the disk due to different lattice deformations associated with mechanical constraints. An experimental and numerical study of Ge_1−x Sn _x microdisk with Sn concentration between 8.5 and 14 at% is reported. Combining finite element method calculations, micro-Raman and X-ray diffraction spectroscopy enables a comprehensive understanding of mechanical deformation, where computational predictions are experimentally validated, leading to a robust model and insight into the strain landscape. Through micro-photoluminescence experiments, the temperature dependence of the bandgap of Ge_1−x Sn _x is parametrized using the Varshni formula with respect to strain and Sn content. These results are the input for spatially dependent band structure calculations based on deformation potential theory. It is observed that Sn content and temperature have comparable effects on the bandgap, yielding a decrease of more than 20 meV for an increase of 1 at% or 100 K, respectively. The impact of the strain gradient is also analyzed. These findings correlate structural properties to emission wavelength and spectral width of microdisk lasers, thus demonstrating the importance of material-related consideration on the design of optoelectronic microstructures.     

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利用SHML模型计算了密度为ρ=1g·cm-3、温度为150eV、200eV、250eV、300eV、400eV的Sn等离子体的随光子能量变化的辐射不透明度及Rosseland平均不透明度.分析了不透明度随光子能量变化曲线的吸收峰值(不透明度峰值)与能级跃迁的对应关系.还将Sn的Rosseland平均不透明度与DCA/UTA及STA模型计算结果作了比较,吻合较好.     

119Sn Mössbauer study of the implantation behaviour of119In,119Sn,119mSn,119Sb and119mTe ions in SiC

The implantation behaviour of stable¹¹⁹Sn⁺ ions and radioactive¹¹⁹In⁺,^119mSn⁺,¹¹⁹Sb⁺ and^119mTe⁺ ions in SiC has been investigated by, respectively, conversion-electron Mössbauer spectroscopy on the 24 keV transition of¹¹⁹Sn, and by Mössbauer emission spectroscopy on the 24 keV radiation emitted by the¹¹⁹Sn daughter after the decays of the radioactive isotopes. The Mössbauer spectra could be decomposed in most cases into two groups of lines, one originating from¹¹⁹Sn atoms on substitutional Si sites, the other from various Sn-vacancy complexes distinguished by their Mössbauer parameters. Annealing experiments reveal a strong dependence of the structure of the defects and the formation and annealing kinetics on the chemical nature of the impurities. Defects formed in 297 K implantations with^119mSn and¹¹⁹Sb anneal above 500 C, resulting in a preferential location of the impurities on substitutional Si sites, whereas^119mTe atoms are efficient defect-trapping centres and no stable, substitutional fraction is observed on either lattice site. Possible structures for the Sn-vacancy complexes are discussed and comparison is made to similar defect complexes in group IV and in III–V semiconductors.     

二茂铁有机锡衍生物的13C,119Sn NMR研究

本文测定了几种二茂铁有机锡衍生物的¹¹⁹Sn,¹³C NMR谱。对其中几种衍生物的¹³C NMR谱进行了归属,从而进一步验证了这类化合物的结构。着重讨论了结构如化合物中取代基X的改变对¹¹⁹Sn化学位移的影响。并对结构如 类化合物N→Sn异侧配位的问题进行了讨论。     

钢中残量元素As,Sn,Sb的X射线荧光光谱分析

本文介绍了用日本理学3530XRF光谱仪扫描道测定钢中痕量元素As、Sn、Sb。由于短波强大的背景破坏了检测线的线性,通过用DATAFLEX 181B背景扣除的数据处理,消除了这些影响,成功地校准了曲线。方法简单;快速;XRFS结果与化学分析一致,该法已用于炼钢的过程控制和原材料分析。     

在40MeV/u时112Sn+112Sn和124Sn+124Sn中多重碎裂的同位旋效应

利用同位旋相关的量子分子动力学模型,研究了^112Sn ^112Sn和^124Sn ^124Sn两个反应系统在入射能量E=40MeV/u时的多重碎裂。计算结果与实验值定性符合。观察到了两个反应系统中,中等质量碎片多重性,中子多重性,荷电粒子多重性与轻荷电粒子多重性之间的关联存在着明显的差别。另外,通过与膨胀蒸发源模型及同位旋相关的渗透模型分析结果的比较,发现这种差别主要是由同位旋相关的反应动力学所造成的。     

在40MeV/u时112Sn+112Sn和124Sn+124Sn中多重碎裂的同位旋效应

利用同位旋相关的量子分子动力学模型,研究了112Sn+112Sn和124Sn+124Sn两个反应系统在入射能量E=40MeV/u时的多重碎裂.计算结果能与实验值定性符合.观察到两个反应系统中,中等质量碎片多重性、中子多重性、荷电粒子多重性与轻荷电粒子多重性之间的关联存在着明显的差别.另外,通过与膨胀蒸发源模型及同位旋相关的渗透模型分析结果的比较,发现这种差别主要是由同位旋相关的反应动力学所造成的.     

Surface tension and density of liquid Bi–Pb,Bi–Sn and Bi–Pb–Sn eutectic alloys

Surface tension and density measurement of liquid Bi₅₆Pb₄₄, Bi₄₃Sn₅₇ and Bi₄₆Pb₂₉Sn₂₅ eutectic alloys was carried out by using the large drop method over the temperature range of 380–750 K. The regular solution model has been used in conjunction with Butler's equation to calculate the surface tension of binary and ternary alloys of the Bi–Pb–Sn system, while the surface tension of ternary alloys has also been predicted by using geometric models. The new experimental results were compared with the calculated values of the surface tension as well as with the data available in the literature.     

Co,Sn共掺ZnO薄膜结构与光致发光的研究

采用溶胶-凝胶旋涂法在玻璃衬底上制备了Co,Sn掺杂ZnO系列薄膜.通过金相显微镜和X射线衍射(XRD)研究了Co与Sn掺杂对薄膜的表面形貌和微结构的影响.XRD结果表明,所有ZnO薄膜样品都存在(002)择优取向,特别Sn单掺ZnO薄膜的c轴择优取向最为显著,而且晶粒尺寸最大.XPS测试表明样品中Co和Sn的价态分别为2+和4+,证实Co²⁺,Sn⁴⁺进入了ZnO的晶格.室温光致发光谱(PL)显示在所有的样品中都有较强的蓝光双峰发射和较弱的绿光发 关键词： ZnO薄膜 溶胶-凝胶 掺杂 光致发光     

中低合金钢中五害元素（Pb,Sn,As,Sb,Bi）的光电光谱分析…

应用日本岛津ＰＤＡ－５０１７真空发射光谱仪，测定了中低低合金钢中的五害元素，对分析条件进行了选择和确定，并讨论了分析结果和影响因素。本方法具有操作简便，分析速度快，准确度高，成本低等优点，在炉前快速分析与石油管材 取得较好的效果。     

Structure,optical, and magnetic properties of rutile Sn1−xMnxO2 thin films

Sn_1?xMn_xO₂ (x ≤ 0.11) thin films were fabricated by sol–gel and spin-coated method on Si (1 1 1) substrate. X-ray diffraction revealed that single-phase rutile polycrystalline structure was obtained for x up to about 0.078. Evolution of the lattice parameters and X-ray photoelectron spectroscopy studies confirmed the incorporation of Mn³⁺ cations into rutile SnO₂ lattice. Optical transmission studies show that the band gap energy (E_g) broadens with the increasing of Mn content. Magnetic measurements revealed that all samples exhibit room temperature ferromagnetism (RTFM), which is identified as an intrinsic characteristic. Interestingly, the magnetic moment per Mn atom decreases with the increasing Mn content. The origin of RTFM can be interpreted in terms of the bound magnetic polaron model.     

NbTi-Nb_3Sn混合超导磁体Nb_3Sn芯磁体的研制

采用掺 Ti 铌管法(NbTi)_3Sn 导体以及“不均匀电流密度绕组设计”,“先绕制后反应”和“环氧真空浸渍”等技术制造的 Nb_3Sn 磁体适合用作 NbTi-Nb_3Sn 混合超导磁体装置的 Nb_3Sn芯磁体,其高场性能优异,体积小、重量轻、容许励磁速度快,承受失超能力强,所研制的净孔为28.5mm(重2.5kg)、30.3mm(重3.0kg)和41mm(重3.95kg)的 Nb_3Sn 磁体分别成功地用于工作中心磁场 14T,12T 和11T 的NbTi-Nb_3Sn 混合超导磁体装置.     

Die magnetischen Momente der 5−-Niveaus von Sn118 und Sn120

The rotations ofγγ-angular correlations in strong external magnetic fields were observed in the decay of 5.1h Sb¹¹⁸ and 5.8d Sb¹²⁰. Values of the gyromagnetic ratios of the 5^? two particle states of Sn¹¹⁸ and Sn¹²⁰ were derived. In the case of 5.1 hours Sb¹¹⁸ the rotation of the 254 keV-1.221 MeVγγ-angular correlation in a field of 40950 Gauss was measured as

$$\omega _L \cdot \tau = 0 \cdot 417 \pm 0 \cdot 038,$$     

Structural Characteristics of Liquid Sn

We investigate the structural properties of liquid Sn. With the help of the internal friction (tanФ) method, it is found that a peak appears in the tan Ф - T curve, suggesting that an anomalous discontinuous temperatureinduced structure change may take place in liquid Sn. From the experimental data of pair distribution functions, we calculate the viscosity η and the excess entropy S and it is found that there are a peak of viscosity in the η-T curve and a bend of excess entropy in the S - T curve, which give a positive support to the appearance of the internal-friction peak in the tan Ф- T curve.     

C,Al,Cu,Sn,Pb等原子核对高能π~+,K~+介子及质子的吸收截面

在联合原子核研究所同步稳相加速器上,研究了高能π~+、K~+介子和原子核的相互作用。利用角度式气体契连科夫速度选择器,选择出纯度约达99％的K~+介子束。测量了C,Al,Cu,Sn,Pb等原子核对动量为2.72,3.70,4.75Бэв/с的π~+介子的吸收截面;C,Al,Cu等原子核对动量为4.75Бэв/с的K~+介子的吸收截面;C,Sn,Pb等原子核对动量为2.72Бэв/с的质子的吸收截面。 利用光学模型,对所得的数据进行了分析。根据π~+介子数据得到的原子核半径公式,与T.Bowen根据π~-介子的测量数据所得结果不同,而和由低能中子散射工作所得结果(R==1.37A~(1/3)×10~(-13)厘米)相符。根据K~+介子数据得到,高能K~+介子与核子相互作用全截面的平均值应为 _(KN)=16.5毫巴。     

PbLa(Zr,Sn,Ti)O_3反铁电陶瓷的静电场能存储特性

为了研究微量掺镧的反铁电陶瓷锆锡钛酸铅(PbLa(Zr,Sn,Ti)O_3,PLZST)的静态存储电场能量的特性,采用传统的氧化物固态反应的陶瓷制备工艺,制备了4个锆锡比不同的PLZST陶瓷样品,样品组分均位于PLZST相图中铁电-反铁电相界附近。通过等静压压致放电的实验方法研究了PLZST陶瓷放电特性。结果表明,经过充分极化的PLZST处于亚稳态的铁电相,在压力作用下,PLZST发生铁电反铁电相变,把在直流电场下极化时储存于PLZST陶瓷的静电场能量瞬间释放出来,从而得到极高功率的电脉冲。最终,样品完全退极化,最大放电电流密度达到5.0nA/cm~2,样品的静电场储能密度最高可达9.45J/cm~3,因此PLZST陶瓷是爆电换能电源的理想材料。