Raman Investigation of Sodium Titanate Nanotubes under Hydrostatic Pressures up to 26.9GPa

High pressure behavior of sodium titanate nanotubes （Na2Ti2O5） is investigated by Raman spectroscopy in a diamond anvil cell （DAC） at room temperature. The two pressure-induced irreversible phase transitions are observed under the given pressure. One occurs at about 4.2 GPa accompanied with a new Raman peak emerging at 834 cm-1 which results from the lattice distortion of the Ti-O network in titanate nanotubes. It can be can be assigned to Ti-O lattice vibrations within lepidocrocite-type （H0.7Ti1.825V0.175O4＆#12539;H2O）TiO6 octahedral host layers with V being vacancy. The structure of the nanotubes transforms to orthorhombic lepidocrocite structure. Another amorphous phase transition occurs at 16.7 GPa. This phase transition is induced by the collapse of titanate nanotubes. All the Raman bands shift toward higher wavenumbers with a pressure dependence ranging from 1.58-5.6 cm-1/GPa.     

Electronic Structure and Optical Properties of La-Doped SrTiO3 and Sr2TiO4 by Density Function Theory

The effect of La doping on the electronic structure and optical properties of SrTiO₃ and Sr₂TiO₄ is investigated by the first-principles calculation of plane wave ultrasoft pseudopotential based on the density function theory (DFT). The calculated results reveal that the electron doping in the case of Sr_0.875La_0.125TiO₃ and Sr_1.875La_0.125TiO₄ can be described within the rigid band model. The La³⁺ ions fully acts as electron donors in Sr_0.875La_0.125TiO₃ and Sr_1.875La_0.125TiO₄ systems and the Fermi level shifts further into the conduction bands (CBs) for Sr_1.875La_0.125TiO₄ compared to Sr_0.875La_0.125TiO₃. The two systems exhibit n-type degenerate semiconductor features. At the same time, the density of states (DOS) of the two systems shift towards low energies and the optical band gaps are broadened. The Sr_1.875La_0.125TiO₄ is highly transparent with the transmittance about 90% in the visible range, which is larger than that of Sr_0.875La_0.125TiO₃(85%). The wide band gap, small transition probability and weak absorption due to the low partial density of states (PDOS) of impurity in the Fermi level result in the optical transparency of the films...     

Effects of Helium and Oxygen Common Implantation in Silicon Wafer

Defect engineering for SiO2 precipitation is investigated using He-ion implantation as the first stage of separation by implanted oxygen （SIMOX）. Cavities axe created in Si by implantation with helium ions. After thermal annealing at different temperatures, the sample is implanted with 120 keV 8.0 ×1016 cm 2 0 ions. The Q ion energy is chosen such that the peak of the concentration distribution is centred at the cavity band. For comparison, another sample is implanted with O ions alone. Cross-sectionM transmission electron microscopy （XTEM）, Fourier transform infrared absorbance spectrometry （FTIR） and atomic force microscopy （AFM） measurements are used to investigate the samples. The results show that a narrow nano-cavity layer is found to be excellent nucleation sites that effectively assisted SiO2 formation and released crystal lattice strain associated with silicon oxidation.     

立方氮化硼的振动光谱及反射光谱的研究

 将黑色、黄色、棕色三种小于50 μm立方氮化硼粉末为样品，研究了其红外光谱、拉曼光谱、反射光谱，结果表明：（1）样品的红外光谱中，1 818 cm^-1和1 548 cm^-1属于cBN的晶格本征振动，而立方氮化硼的晶格本征振动外的晶体缺陷吸收则发生在~800 cm^-1，1 580 cm^-1~1 740 cm^-1和大于2 400 cm^-1处。（2）拉曼光谱测试表明，在1 052 cm^-1和1 304 cm^-1附近出现的散射与cBN不具有反演中心及cBN具有立方结构这样的事实相一致，并且这种散射伴随着布里渊区中心声子的横向和纵向发射。144 cm^-1附近出现的散射，被认为是由于局部振荡模式的出现，在反斯托克斯区造成的信号，这与晶格中杂质缺陷有关。（3）依据得到的反射光谱，计算了cBN单晶禁带宽度，发现这三种cBN都具有大于金刚石的禁带宽度值，分别为：E_g(黑)=6.21 eV，E_g(黄)=5.73 eV，E_g(棕)=5.71 eV。     

Electrical Studies on Pentacene Thin Film Transistors with Different Channel Widths

In order to conduct electrical studies on organic thin film transistors, top-contact devices are fabricated by growing polycrystalline films of freshly synthesized pentacene over Si/SiO2 substrates with two different channel widths under identical conditions. Reasonable field effect mobilities in order of 10^-2-10^-3 cm^2V^-1s^-1 are obtained in these devices. An elaborative electrical characterization of all the devices is undertaken to study the variance in output saturation current, field effect mobility, and leakage current with aging under ambient conditions. As compared to the devices with longer channel width, the devices with shorter channel width exhibit better electrical performance initially. However, the former devices sustain the moderate performance much longer than the latter ones.     

High-Temperature Characteristics of Ti/Al/Ni/Au Ohmic Contacts to n-GaN

We present the high-temperature characteristics of Ti/Al/Ni/Au（15 nm/220 nm/40 nm/50 nm） multiplayer contacts to n-type GaN （Nd = 3.7 × 10^17 cm^-3, Nd = 3.0 × 10^18 cm^-3）. The contact resistivity increases with the measurement temperature. Furthermore, the increasing tendency is related to doping concentration. The higher the doped, the slower the contact resistivity with decreasing measurement temperature. Ti/Al/Ni/Au ohmic contact to heavy doping n-GaN takes on better high temperature reliability. According to the analyses of XRD and AES for the n-GaN/Ti/Al/Ni/Au, the Au atoms permeate through the Ni layer which is not thick enough into the AI layer even the Ti layer.     

Electrical Characterization of Deep Trap Properties in High-k Thin-Film HfO2 Dielectric

Deep-trap properties of high-dielectric-constant （k） HfO2 thin films are investigated by deep-level transient spectroscopy and capacitance-voltage methods. The hole traps of the HfO2 dielectric deposited on a p-type Si substrate by sputtering are investigated in a metal-oxide-semiconductor structure over a temperature range of 300-500K. The potential depth, cross section and concentration of hole traps are estimated to be about 2.5eV, 1.8 ×10^-16 cm^2 and 1.0 × 10^16 cm^-3, respectively.     

Surface Emitting THz Wave Parametrical Oscillator Using MgO：LiNbO3

Room-temperature operation terahertz （THz） wave source is demonstrated using three MgO：LiNbO3 crystals which have a noncollinear arrangement. The experimental results show that the THz wave can be tunable from 0.8 THz to 3.0 THz, and the peak energy output is 103 pJ/pulse at 1.5 THz. The noncoilinear cavity configuration makes the THz beam have Gaussian-like spatial distribution, small divergence angle, perpendicularly eradiated from the crystal surface. The beam quality factor M2 is measured to be Mx^2 = 1.15, Mx^2 = 1.25 for characterizing the THz wave beam. Experiments also show that the THz beam can be focused by using a polyethylene lens, and the focal spot size is close to the diffraction limit.     

Synthesis,Characterization of 9, 9＇-Bianthracene and Fabrication of 9, 9＇-Bianthracene Field-Effect Transistors

We synthesize and purify 9, 9＇-bianthracene with the purity up to 96.4%. The electronic and crystallographic structures of 9, 9＇-bianthracene are studied. The results of a joint experimental investigation based on a combination of x-ray diffraction （XRD） spectra, hydrogen nuclear magnetic （HNMR） spectra, infrared absorption （FT-IR） spectra, and mass spectra （MS） of 9, 9＇-bianthracene are obtained. The uniform compact film is observed by an atomic-force microscope （AFM）. Organic field effect transistors （OFETs） with an active layer based on the synthesized 9, 9＇-bianthracene are fabricated for the first time. Its field-effect mobility is as large as 0.067 cm^2 /（V·s） and the on/off ratio is above 5 ×10^4. The result demonstrates that the oligomerization of a small semiconductor molecule is an effective method to develop high-mobility organic semiconductors.     

Nitrogen-Doped Chemical Vapour Deposited Diamond： a New Material for Room-Temperature Solid State Maser

Electron spin resonance （ESR） in polycrystalline diamond films grown by dc arc-jet and microwave plasma chemical vapour deposition is studied. The films with nitrogen impurity concentration up to 8 × 10^18 cm^-3 are also characterized by Raman, cathodoluminescence and optical absorption spectra. The ESR signal from P1 centre with g-factor of 2.0024 （nitrogen impurity atom occupying C site in diamond lattice） is found to exhibit an inversion with increasing the microwave power in an H102 resonator. The spin inversion effect could be of interest for further consideration of N-doped diamonds as a medium for masers operated at room temperature.     

Particle-number conserving analysis for the 2-quasiparticle and high-K multi-quasiparticle states in doubly-odd 174,176Lu

Two-quasiparticle bands and low-lying excited high-K four-, six-, and eight-quasiparticle bands in the doubly-odd ^{174, 176}Lu are analyzed by using the cranked shell model (CSM) with the pairing correlations treated by a particle-number conserving (PNC) method, in which the blocking effects are taken into account exactly. The proton and neutron Nilsson level schemes for ^{174, 176}Lu are taken from the adjacent odd-A Lu and Hf isotopes, which are adopted to reproduce the experimental bandhead energies of the one-quasiproton and one-quasineutron bands of these odd-A Lu and Hf nuclei, respectively. Once the quasiparticle configurations are determined, the experimental bandhead energies and the moments of inertia of these two- and multi-quasiparticle bands are well reproduced by PNC-CSM calculations. The Coriolis mixing of the low-K (K=|Ω₁-Ω₂|) two-quasiparticle band of the Gallagher-Moszkowski doublet with one nucleon in the Ω = 1/2 orbital is analyzed.     

Doublet bands in 128La and systematic features of energy separationof doublet bands observed in the A～130 mass region

High spin states of ¹²⁸La have been studied through the fusion-evaporation reaction ¹¹⁸Sn(¹⁴N, 4n)¹²⁸La at a beam energy of 69 MeV. A positive-parity side band with the same configuration as that of the yrast band has been identified. Moreover, it is noted that the energy separation ΔE(I)=E(I)_side-E(I)_yrast of all doublet bands reported in odd-odd nuclei in the A～130 mass region exhibit a staggering pattern systematically, and they stagger up at even-spin and stagger down at odd-spin.     

Formation Mechanisms of Electrical Conductivity and Optical Properties of ZnO:N Film Produced by Annealing Treatment

The effects of annealing on the chemical states of N dopant, electrical, and optical properties of N-doped ZnO film grown by molecular beam epitaxy (MBE) are investigated. Both the as-grown ZnO:N film and the film annealed in N₂ are of n-type conductivity, whereas the conductivity converts into p-type conductivity for the film annealed in O₂. We suggest that the transformation of conductivity is ascribed to the change in ratio of the N molecular number on O site (N₂)_O to the N atom number on O site (N_O) in ZnO:N films under the various annealed atmosphere. For the ZnO:N film annealed in N₂, the percentage content of (N₂)_O is larger than that of N_O, i.e.the ratio >1, resulting in the n-type conductivity. However, in the case of the ZnO:N film annealed in O₂, the percentage content of (N₂)_O is fewer than that of N_O, i.e., the ratio <1, giving rise to the p-type conductivity. There is an obvious difference between low-temperature (80K) PL spectra of ZnO:N film annealed in N₂ and that of ZnO:N film annealed in O₂. An emission band located at 3.358eV is observed in the spectra of the ZnO:N film after annealed in N₂, this emission band is due to donor-bound exciton (D⁰X). After annealed in O₂, the PL of the donor-bound exciton disappeared, an emission band located at 3.348eV is observed, this emission band is assigned to acceptor-bound exciton (A⁰X).     

High Resolution Mode-Selective Excitation by Adaptive Femtosecond Pulse Shaping

High resolution mode-selective excitation in the mixture of C6H6 （992 cm^-1） and C6D6 （945 cm^-1） is experimentally achieved by adaptive femtosecond pulse shaping based on the genetic algorithm （GA）, and second harmonic generation frequency-resolved optical gating （SHG-FROG） is adopted to characterize the original and optimal laser pulses, and its mechanism is experimentally validated by tailoring the frequency components of the pump pulses at the Fourier plane. It is indicated that two-pulse coherent mode-selective excitation of the Raman scattering mainly depends on the effective frequency components of the pump pulse related to specific molecular vibrational mode. The experimental results have attractive potential applications in the complicated molecular system.     

Correspondence between phenomenological and IBM-1 models of even isotopes of Yb

Energy levels and the reduced probability of E2–transitions for ytterbium isotopes with proton number Z=70 and neutron numbers between 100 and 106 have been calculated through phenomenological(Ph M)and interacting boson(IBM-1)models.The predicted low-lying levels(energies,spins and parities)and the reduced probability for E2–transitions results are reasonably consistent with the available experimental data.The predicted low-lying levels(gr–,β1–andγ1–band)produced in the Ph M are in good agreement with the experimental data compared with those by IBM-1 for all nuclei of interest.In addition,the phenomenological model was successful in predicting theβ2–,β3–,β4–,γ+2–and 1+–band while it was a failure with IBM-1.Also,the 3–band is predicted by the IBM-1 model for172Yb and174Yb nuclei.All calculations are compared with the available experimental data.     

Influence of Vacuum Organic Contaminations on Laser-Induced Damage of 1064 nm Anti-Reflective Coatings

We investigate the influence of vacuum organic contaminations on laser-induced damage threshold （LIDT） of optical coatings. Anti-reflective （AIR） coatings at 1064 nm made by Ta2 O5/SiO2 are deposited by the ion beam sputtering method. The LIDTs of AR coatings are measured in vacuum and in atmosphere, respectively. It is exhibited that contaminations in vacuum are easily to be absorbed onto optical surface because of lower pressure, and they become origins of damage, resulting in the decrease of LIDT from 24.5J/cm^2 in air to 15.TJ/cm^2 in vacuum. The LIDT of coatings in vacuum has is slightly changed compared with the value in atmosphere after the organic contaminations are wiped off. These results indicate that organic contaminations are the main reason of the LIDT decrease in vacuum. Additionally, damage morphologies have distinct changes from vacuum to atmosphere because of the differences between the residual stress and thermal decomposability of filmy materials.     

Cs^＋-K^＋ Exchange in Z-Cut KTiOPO4 Crystal Covered with Chromium Masking Layer

Cs^＋-K^＋ ion exchanges are performed on z-cut KTiOPO4 crystals with chromium coating covered. The temperature of ion exchange is 430℃, and the time range from 15min to 30min. The dark mode spectra of the samples are measured by the prism coupling method. The channel structures on the samples are observed by a microscope and the near field pattern of the channel waveguides are measured by the end-fire coupling method. The refractive index of the samples increases and the increments at surface are modulated due to the existence of Cr film. In the region covered by Cr film, the refractive index of the samples at the surface increases dramatically in a shallow layer. The results of energy dispersive x-ray spectra indicate that in the region covered with Cr film, Cr ions participate in the ion exchange process, and enhance the refractive index. The results may provide a possibility that achieves index enhancement and Cr doping synchronically.     

吡咯俘精酸酐的光致各向异性研究

将有机光致变色化合物—吡咯取代俘精酸酐掺杂于PMMA中形成薄膜.在紫外光照射下,薄膜由无色态转换为呈色态.用650 nm线偏振激光照射薄膜,在由呈色态转变为无色态时产生光致各向异性.对633 nm的探测光具有正单轴晶体特性,光轴方向平行于激发光振动方向,光致二向色性率(D_⊥-D_∥)可达0.2,光致双折射率(n_∥-n_⊥)可达2×10^-3.实验还测量了光致各向异性与曝光量的特性曲线,发现最佳曝光量为13～20 J/cm²;理论分析了其原因.这些结果为俘精酸酐材料在光信息处理方面的应用提供了实验数据.     

Photopolymerization-Induced Two-Beam Coupling and Light-Induced Scattering in Polymethyl Methacrylate

Light amplification due to two-beam coupling is realized in doped polymethyl methacrylate （PMMA） glasses. A coupling gain as large as 14 cm^-1 is obtained. The dynamic behaviour of absorption and light-induced scattering due to the process of photopolymerization are also studied. The results show that the amplification and its dynamic process enable possible applications of PMMA in optical devices.     

Femtosecond Third-Order Optical Nonlinearity of Au：Bi203 Nanocomposite Films

Ultrafast third-order optical nonlinearities of the as-deposited and annealed Au：Bi2O3 nanocomposite films deposited by magnetron cosputtering are investigated by using femtosecond time-resolved optical Kerr effect （OKE） and pump probe techniques. The third-order optical nonlinear susceptibility is estimated to be 2.6Ф×10^- 10 esu and 1.8 × 10.9 esu at wavelength of 800nm, for the as-deposited and the annealed film, respectively. The OKE signal of the as-deposited film is nearly temporally symmetrical with a peak centred at zero delay time, which indicates the dominant contribution from intraband transition of conduction electrons. For the annealed film, the existence of a decay process in OKE signal implies the important contribution of hot electrons. These characteristics are in agreement with the hot electron dynamics observed in pump probe measurement.