Raman fiber laser for the drug-free photodynamic therapy

An SRS laser with a radiation wavelength of 1.262 μm and a maximum power of 5.5 W is presented. The laser wavelength corresponds to the excitation band of singlet oxygen and can be used for the treatment of oncological diseases. The laser source is employed for the treatment of basalioma.     

Oxygen incorporation in ZnTe thin films grown by plasma-assisted pulsed laser deposition

We studied oxygen incorporation into ZnTe thin films with nitrogen and oxygen plasma during a plasma-assisted pulsed laser deposition (PA-PLD). It was shown that ZnTe:O layer formed with oxygen plasma exhibits an enhancement of optical transparency in visible spectral region due to the formation of amorphous TeO_x. Especially, the ZnTe:NO deposited by PA-PLD under nitrogen and oxygen partial pressures with N₂:O₂ of 10:3 sccm showed p-type semiconducting characteristics and the formation of intermediate band at about 0.5–0.8 eV below the ZnTe band edge. These results for oxygen incorporation in ZnTe thin film such as the enhancement of optical transparency in visible spectral region and the intermediate band formation will be useful for optoelectronic devices or intermediate band solar cells.     

Tunable diode laser measurements of water vapour absorption line parameters

Tunable diode laser measurements of water vapour lines in the 5 μm region have been extended to include oxygen as well as nitrogen broadening. Positive pressure shifts of line positions have been observed for the first time in the v ₂ band. Absolute calibration of a line position using the CO laser as a reference has also been carried out.     

Novel concept of electric discharge oxygen-iodine laser

A novel concept of discharge oxygen-iodine laser (DOIL) is presented. The supersonic DOIL includes a discharge singlet oxygen generator (DSOG) and discharge atomic iodine generator (DAIG). The operation of DSOG is based on a fast mixing of hybrid argon plasma jet of DC electric arc and RF discharge with a neutral molecular oxygen stream. The goal of our effort is achievement of DOIL oscillations by this new discharge technique, which should provide the singlet oxygen yields exceeding 30% at the total pressures higher than 10 torr. The DAIG operation is based on a cw/pulse RF discharge dissociation of iodine donors directly inside a laser iodine injector. This method substitutes the classic dissociation of molecular iodine by energy of singlet oxygen, which saves its energy for laser generation and so can increase the laser efficiency. The laser power could be thus enhanced by up to 25% if this method is employed in a chemical oxygen-iodine laser (COIL) operation, and even 3 times in DOIL without increase in the iodine laser pumping by singlet oxygen.     

Effect of XeCl laser irradiation on the defect structure of Nd:YAG crystals

This paper presents the effect of XeCl laser irradiation on Nd:YAG single crystal samples with various number of pulses at different repetition rates and laser fluences. Effects of the irradiation on the optical and structural properties of the crystal are analyzed by UV–vis-NIR spectroscopy. Annihilation of some point defects of the crystal structure is observed following laser irradiation at a fluence of 100 mJ cm⁻² with 100 and 500 pulses. Increasing the laser fluence and pulse numbers leads to saturation and new defects are found to be formed in the crystal. Additional absorption spectra of the irradiated samples show that oxygen vacancies in the Nd:YAG crystals are removed during the low-dose irradiation. The laser irradiation is compared to the thermal annealing process for Nd:YAG crystal modification. Additional absorption spectrum of an annealed sample reveals that induced negative absorption band at 236 nm is correlated with the annihilation of the oxygen vacancy center. Our results also demonstrate that XeCl laser treatment has several advantages upon annealing at high temperatures in the Nd:YAG crystal quality improvement. Thus, the present work can give a new approach to modify Nd:YAG crystals to be used in a wide variety of solid-state laser engineering.     

Optical characteristics of amorphous V2O5 thin films colored by an excimer laser

The V₂O₅ films were prepared by an RF sputtering method, and the amorphous films were colored by an UV excimer laser. The crystallinity of the as-grown V₂O₅ film was degenerated greatly by laser irradiation, as determined by X-ray diffraction (XRD) and Raman studies. The transmission and complex refractive index spectra of the V₂O₅ film were affected by variations in the microstructure, including the surface morphology, crystalline structure, and substoichiometry with an oxygen deficiency. Considerable emissions due to oxygen vacancies and band transition of photoluminescence (PL) peaks were observed, and the peaks were significantly changed after laser irradiation. The variations in the optical properties in both films may be attributed to oxygen deficiency induced by laser irradiation.     

Plasma induced by pulsed laser and fabrication of silicon nanostructures

It is interesting that in preparing process of nanosilicon by pulsed laser, the periodic diffraction pattern from plasmonic lattice structure in the Purcell cavity due to interaction between plasmons and photons is observed. This kind of plasmonic lattice structure confined in the cavity may be similar to the Wigner crystal structure. Emission manipulation on Si nanostructures fabricated by the plasmonic wave induced from pulsed laser is studied by using photoluminescence spectroscopy.The electronic localized states and surface bonding are characterized by several emission bands peaked near 600nm and 700nm on samples prepared in oxygen or nitrogen environment. The electroluminescence wavelength is measured in the telecom window on silicon film coated by ytterbium. The enhanced emission originates from surface localized states in band gap due to broken symmetry from some bonds on surface bulges produced by plasmonic wave in the cavity.     

Synthesis of p-type zinc oxide films by plasma-assisted pulsed laser deposition

Heavily acceptor doped zinc oxide (ZnO) films were deposited on quartz substrates by plasma-assisted pulsed laser deposition (PA-PLD) using a non-sintered target heavily doped with phosphorus or copper and radio frequency induction-coupled nitrogen or oxygen plasma (RF-ICP). The p-type ZnO layer was achieved by a nitrogen acceptor dopant using the technique of plasma-assisted nitrogen (PA-N) pulsed laser deposition. Photoluminescence spectra showed a peak from phosphorus- or copper-bound excitons at about 380 nm and a broad, green defect-related band occurring at about 550 nm. Transmission spectra showed a blue shift of the near-band-edge wavelength and a worsening of transmission by heavily copper-doped zinc oxide.     

Nanostructured tungsten oxide thin films by the reactive pulsed laser deposition technique

Preparation of nanostructured tungsten oxide thin films using the reactive pulsed laser ablation technique is reported. The structural, morphological, optical and electrical properties of deposited films are systematically studied by changing the ambient oxygen pressure (pO₂). Structural dependence of tungsten oxide films on ambient oxygen pressure is discussed using grazing incidence X-ray diffraction (GIXRD) and micro-Raman spectra. The section analysis using atomic force microscopy exposed the smooth surface features of the deposited films. The blue shift in optical bandgap with an increase in ambient oxygen pressure is expounded in terms of electronic band structure of tungsten oxide. The influence of oxygen pressure on optical constants like extinction coefficient, band edge sharpness, refractive index and optical bandgap is also conveyed. The temperature variation of electrical resistance for films deposited at 0.12 mbar furnishes evidence for its semiconducting nature. PACS 68.55-a; 72.80.Ga; 81.15.Fg; 81.07.Bc; 78.68.+m; 78.20.Ci     

Predissociation and the vibrational spectrum of molecular oxygen in an intense laser field. A Schumann-Runge band interval

The probabilities of predissociation and vibronic transitions between the states of the oxygen molecule in the Schumann-Runge band in the presence of a strong laser field are examined. The interaction of the molecule with the laser field is described using the rotating wave approximation. The predissociation probabilities for the avoided crossing of two adiabatic molecular terms are calculated within the framework of the Landau-Zener model. The energies of the vibrational states in the laser field are determined by diagonalization of the adiabatic Hamiltonian in the harmonic oscillator basis set. The predissociation thresholds are determined and the Franck-Condon factors are calculated as functions of the frequency and intensity of the external electromagnetic field.     

Theoretical and experimental study of laser induced damage on GaAs by nanosecond pulsed irradiation

The surface damage experiments of gallium arsenide (GaAs) single crystal irradiated by 1.06 and 0.53 μm nanosecond irradiations are carried out with fundamental and frequency-doubled Nd:YAG laser, respectively. The surface damage thresholds for both wavelengths are experimentally determined and the damaged morphologies and elementary component are analyzed with electron probe microanalyzer (EPM). It is found that the components of Ga and As almost keep constant in our experiments when the irradiated fluence is just around the surface damage threshold and no oxygen is found at all. The theoretical calculations on temperature rise for both wavelengths are carried out using the purely thermal model. It is shown that for irradiation with photon energy above the corresponding band gap the theoretical calculation is in good agreement with the experimental results; however, for that with photon energy just below the band gap, the experimental results cannot be effectively explained by the purely thermal heating mechanism. Combining with the experiment of multi-shot damage from references we finally conclude that the damage by laser irradiation with photon energy below the band gap should be explained by the micro-defect accumulation and consequently enhanced absorption heating mechanism.     

Continuously tunable external-cavity diode laser with a double-grating arrangement

A new external-cavity diode laser system based on an extended version of the Littman configuration is investigated. In our laser system the tuning mirror is replaced with a second grating mounted at the Littrow angle. This double-grating design provides a smaller passive bandwidth than the grating-mirror configuration, which is used to compensate for the large angle-of-incidence-dependent losses of the grazing-incidence grating. This results in a broader continuous tuning range with an improved mode stability. Because two laser diodes, emitting at 820 and 775 nm, respectively, are used, the external-cavity laser is continuously tunable without mode hops across 35 nm at 820 nm and 27 nm at 775 nm. Such a laser was used to measure the absorption lines of the oxygen A band around 762 nm. The complete R - and P -rotational branches of the b summation operator(g)(1) (+)(nu(??)=0)?X (3) summation operator(g)(-)(nu (?)=0) transition were recorded in a single-wavelength scan.     

Synthesis of Ni-doped InTaO4 nanocrystallites by reactive pulsed laser ablation for application to visible-light-operating photocatalysts

Ni-doped InTaO₄ nanocrystallites were synthesized by a reactive pulsed laser ablation process, aiming at visible-light-operating photocatalysts. The third harmonics beam of a Nd:YAG laser was focused onto a sintered In_0.9Ni_0.1TaO_4−δ target in mixture background gases (O₂ + He). The deposited species were columnar-structured porous films consisting of primary nanocrystallites. The mean diameter of the primary nanocrystallites was 4 nm. Optical absorption characteristics, especially in low absorbance (sub-band) regions, were evaluated by photoacoustic spectroscopy. Absorption in the sub-band region decreased drastically with increasing O₂ partial pressures. It is inferred that oxygen deficiencies are suppressed, because of enough oxygen vapors in the reactive background gases. An absorption band around 420 nm appeared obviously in O₂ partial pressures above 5%, in the Ni-doped InTaO₄ nanocrystallites. The visible region absorption band is presumably attributed to the Ni 3d-eg orbitals. In contrast, pure InTaO₄ nanocrystallites showed a sharp band edge, without the visible absorption band.     

Study of structural and optical properties of ZnO films grown by pulsed laser deposition

Wurtzite zinc oxides films (ZnO) were deposited on silicon (0 0 1) and corning glass substrates using the pulsed laser deposition technique. The laser fluence, target-substrate distance, substrate temperature of 300 °C were fixed while varying oxygen pressures from 2 to 500 Pa were used. It is observed that the structural properties of ZnO films depend strongly on the oxygen pressure and the substrate nature. The film crystallinity improves with decreasing oxygen pressure. At high oxygen pressure, the films are randomly oriented, whereas, at low oxygen pressures they are well oriented along [0 0 1] axis for Si substrates and along [1 0 3] axis for glass substrates. A honeycomb structure is obtained at low oxygen pressures, whereas microcrystalline structures were obtained at high oxygen pressures. The effect of oxygen pressure on film transparency, band gap E_g and Urbach energies was investigated.     

飞秒脉冲激光辐照下硅表面光致荧光特性(英文)

采用钛宝石飞秒脉冲激光对单晶硅在空气中进行辐照,研究了硅表面在不同扫描速度和能量密度下的光致荧光特性。光致荧光谱(PL)测量表明,在样品没有退火处理的情况下,激光扫描区域观察到橙色荧光峰(603nm)和红色荧光带(680nm附近)。扫描电子显微镜(SEM)测量显示,在飞秒脉冲激光辐照硅样品的过程中硅表面沉积了大量的纳米颗粒。利用傅里叶变换红外光谱仪(FT-IR)检测到了低值氧化物SiOx(x2)的存在,并且结合能谱仪(EDS)检测结果发现氧元素在光致发光中起着重要作用。研究表明:603nm处橙色荧光峰来自微构造硅表面低值氧化物SiOx,680nm附近红色荧光带来自量子限制效应。同时样品表面硅纳米颗粒的尺寸和氧元素的浓度分别决定了红色荧光带和橙色荧光的强度,通过调节飞秒激光脉冲的扫描速度和能量密度,可以有效地控制样品的荧光强度。     

Structural and optical properties of pulsed laser deposited SrBi2Nb2O9 thin films

SrBi₂Nb₂O₉ (SBN) thin films were prepared on fused quartz substrates at room temperature by pulsed laser deposition. The influence of deposition parameters such as target-to-substrate distance, oxygen pressure and annealing temperature on film crystallization behavior was investigated by X-ray diffraction. Results indicated that the films grown at the optimum processing conditions have polycrystalline structure with a single layered perovskite phase. The optical transmittance of the films prepared at various oxygen pressures was measured in the wavelength range 200–900 nm using UV–vis spectrophotometer. The results showed that there is a red shift in the optical absorption edge with a rise in the oxygen pressure. Refractive index as a function of wavelength and optical band gap of the films were determined from the optical transmittance spectra. The results indicated that the refractive index increases with increasing oxygen pressure at the same incident light wavelength, while the band gap reduces from 4.13 to 3.88 eV. It may be attributed to an increase in packing density and grain size, and decrease in oxygen defects.     

激光辐照PC型HgCdTe探测器的实验研究

 分别用连续波1.319μm激光和10.6μm激光辐照PC型HgCdTe红外探测器时，得到了不同辐照光功率密度下，探测器输出的一系列实验结果。给出了在波长为1.319μm的波段内激光辐照下PC型HgCdTe探测器的饱和阈值；用波长为10.6μm的波段外CO₂激光辐照探测器时，发现了一些与波段内激光辐照探测器时大不相同的实验现象；对实验结果进行了分析。简要总结了PC型HgCdTe探测器对于波段内和波段外激光辐照的响应机制。     

Pulsed laser deposition of tantalum pentoxide film

We report thin tantalum pentoxide (Ta₂O₅) films grown on quartz and silicon substrates by the pulsed laser deposition (PLD) technique employing a Nd:YAG laser (wavelength 5=532 nm) in various O₂ gas environments. The effect of oxygen pressure, substrate temperature, and annealing under UV irradiation using a 172-nm excimer lamp on the properties of the grown films has been studied. The optical properties determined by UV spectrophotometry were also found to be a sensitive function of oxygen pressure in the chamber. At an O₂ pressure of 0.2 mbar and deposition temperatures between 400 and 500 °C, the refractive index of the films was around 2.18 which is very close to the bulk Ta₂O₅ value of 2.2, and an optical transmittance around 90% in the visible region of the spectrum was obtained. X-ray diffraction measurements showed that the as-deposited films were amorphous at temperatures below 500 °C and possessed an orthorhombic (#-Ta₂O₅) crystal structure at temperatures above 600 °C. The most significant result of the present study was that oxygen pressure could be used to control the composition and modulate optical band gap of the films. It was also found that UV annealing can significantly improve the optical and electrical properties of the films deposited at low oxygen pressures (<0.1 mbar).     

Simplified model for calculation of power and spectral characteristics of laser diode with fiber Bragg grating

A simplified model consisting of a laser diode, air gap, and optical fiber is used to calculate power and spectral characteristics and the band width of the radiation of laser with fiber Bragg grating. The results of the simplified model are in reasonable agreement with the experimental data on power and spectral characteristics. The radiation band width of the laser diode with fiber Bragg grating can be less than the band width for a single laser diode by four orders of magnitude.     

连续波对激光雷达的电磁干扰效应

为检验连续波电磁环境下激光雷达的安全可靠性,以单线离轴激光雷达作为试验对象,进行了连续波作用下激光雷达电磁干扰效应试验。通过试验得到,当干扰天线极化方向不同时,同一激光雷达的敏感频率和频段也是不同的,而且干扰信号的敏感频率和敏感频段不同时,激光雷达受干扰的场强的大小不同,在同一敏感频率场强越大,激光雷达受干扰情况越严重;最后分析得到了该激光雷达受到干扰的原因, 为改进激光雷达,提高其电磁环境适应性提供了依据。