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1.
Yoshida M  Ono A  Nakazawa M 《Optics letters》2007,32(24):3513-3515
A 10 GHz regeneratively mode-locked semiconductor optical amplifier fiber ring laser with a picosecond pulse duration was newly constructed, and the linewidth change of a longitudinal mode was measured for various laser cavity lengths using a delayed self-heterodyne detection method. The detected line shape was approximately Gaussian for cavity lengths of 3.4-171 m. This result indicates that the laser linewidth depends strongly on thermal or acoustic cavity length fluctuations. The linewidth was proportional to the inverse square root of the cavity length, and a linewidth of 1.7 kHz was obtained for a cavity length of 171 m.  相似文献   

2.
We demonstrate a method for further reducing the cavity linewidth by the application of a small longitudinal magnetic field on the Rb cell. Because of the magnetic field multiple electromagnetically induced transparen- cies (EITs) are observed. The center EIT linewidth is measured as a function of the magnetic field. By utilizing the center EIT we narrow the cavity linewidth to 2 MHz which is half of the cavity linewidth without magnetic field.  相似文献   

3.
本文从理论上分析了外腔半导体激光器的线宽压窄原理,用延时自外差法对外腔半导体激光器的线宽特性进行了测量研究,得到了线宽反比于激光器输出功率及外腔反馈率的实验结果.  相似文献   

4.
Laser linewidth affects baseline mode structured variations and hence measurement absorption sensitivity in off-axis cavity enhanced absorption spectroscopy with a continuous-wave tunable laser and a stable optical cavity formed by two high reflectivity mirrors. Cavity transmittances have been calculated for various laser linewidths and different optical beam re-entrant conditions for the cavity when overlapping of the optical beams occurs on the cavity mirrors after a finite number of beam round trips within the cavity. It is shown that in order to achieve maximum absorption sensitivity both a specific laser linewidth and specific arrangement of the optical cavity have to be selected and defined using the proposed approach.  相似文献   

5.
1IntroductionNarowlinewidthtunablesinglefrequencysemiconductorlasersarenedforapplicationsincoherentcommunication,coherentde...  相似文献   

6.
线宽压窄和频率锁定是提高激光器(特别是半导体激光器)性能的重要手段。在理论分析光反馈时的半导体激光器线宽压窄和频率锁定机理的基础上,建立了一套基于高品质V型光学谐振腔的半导体激光器线宽压窄实验系统,并利用该系统开展了初步实验研究。通过对比无有光反馈情况下的V型腔的透射光扫描线形,初步验证了V型腔用于半导体激光器线宽压窄和频率锁定的可行性,为后续研究奠定了基础。  相似文献   

7.
We report measurements of the residual phase-noise knee position and longitudinal-mode linewidth of a hybridly mode-locked external linear cavity semiconductor laser as a function of laser cavity length. Excellent agreement between these measurements suggests a direct relationship between rms pulse-to-pulse timing jitter and average longitudinal-mode linewidth. This relationship leads to a fundamental limit in the timing jitter of mode-locked lasers.  相似文献   

8.
The linewidth of a polarization-locked external cavity diode laser (ECDL) is explored employing heterodyne as well as self-heterodyne measurements. We use a model capable of providing the individual contributions of white, pink and red noise to the overall linewidth to analyze the measured beat spectra. These spectra are obtained while tuning the external cavity as well as a function of pump current and feedback level. By virtue of our locking technique, we find that the linewidth can be adjusted and minimized by simply altering the setpoint of the closed-loop control. This control of the linewidth is applicable for any ECDL using polarization locking. For our particular ECDL, we are able to tune the overall linewidth from ??8?kHz to 20?kHz. Moreover, we achieve a lower white noise level of the ECDL compared to a free running one.  相似文献   

9.
强反馈光纤光栅外腔半导体激光器   总被引:5,自引:0,他引:5  
安宏林  林祥芝 《光学学报》1997,17(12):609-1613
在理论上对强外腔反馈情形的半导体激光器线宽压窄效应进行了分析,对消反膜剩余反射率,外腔反射率,外腔腔长对线宽压缩的影响进行了研究,在实验上采用光纤光栅作为反馈元件,与一端镀有消反膜的1.5μm波段的常规多纵模交导体激光器耦合,构成强反馈光纤光栅外腔半导体激光器,得到单频窄线宽的激光输出,静态下边模抑制比大于30dB,线宽小于120kHz。  相似文献   

10.
在87Sr光晶格钟实验系统中,通过将自由运转的698 nm激光频率锁定在由超低膨胀系数的玻璃材料构成的超稳光学参考腔上,从而获得短期频率稳定性较好的超稳窄线宽激光.超稳光学参考腔的腔长稳定性决定了最终激光频率的稳定度.为了降低腔长对温度的敏感性,使激光频率具有更好的稳定度和更小的频率漂移,利用锶原子光晶格钟的钟跃迁谱线,测量了698 nm超稳窄线宽激光系统中超稳光学参考腔的零温漂点.通过对钟跃迁谱线中心频率随温度的变化曲线进行二阶多项式拟合,得到698 nm超稳窄线宽激光系统的零温漂点为30.63℃.利用锶原子光晶格钟的闭环锁定,测得零温漂点处698 nm超稳窄线宽激光系统的线性频率漂移率为0.15 Hz/s,频率不稳定度为1.6×10–15@3.744 s.  相似文献   

11.
Duan L  Gibble K 《Optics letters》2005,30(24):3317-3319
We demonstrate that a laser can be directly locked to a cavity when the laser linewidth is much greater than the cavity linewidth. We lock an external-cavity diode laser with more than 1 MHz of added frequency noise to a 3.5 kHz wide cavity resonance. Our analog servo acquires lock even though the laser frequency sweeps through the cavity resonance in less than the cavity buildup time. Our theoretical analysis fully describes our measurements and explains why lock can be acquired.  相似文献   

12.
针对窄线宽激光器输出谱线窄,难以被锁定的情况,利用F-P腔特有极窄线宽、高精细度特性对激光器谱线线宽实施压窄及频率锁定。通过设计实验方案并搭建锁频测试平台,利用F-P腔外部光反馈将窄线宽半导体激光器线宽压窄来提高锁频精度。通过监测正弦波调制下F-P腔对于4种不同直流电压下激光PZT扫频段的透射谱线,并对其分别进行解调和锁频精度测试,得到直流高压放大器电压为73 V时对窄线宽激光器进行扫频,激光器反馈锁频精度最高可达1.5 MHz。  相似文献   

13.
We report on a simple, compact, and robust 780 nm distributed Bragg reflector laser with subkilohertz intrinsic linewidth. An external cavity with optical path length of 3.6 m, implemented with an optical fiber, reduces the laser frequency noise by several orders of magnitude. At frequencies above 100 kHz the frequency noise spectral density is reduced by over 33 dB, resulting in an intrinsic Lorentzian linewidth of 300 Hz. The remaining low-frequency noise is easily removed by stabilization to an external reference cavity. We further characterize the influence of feedback power and current variation on the intrinsic linewidth. The system is suitable for experiments requiring a tunable laser with narrow linewidth and low high-frequency noise, such as coherent optical communication, optical clocks, and cavity QED experiments.  相似文献   

14.
邓金泉 《波谱学杂志》1987,4(3):253-258
本文提出了利用短谐振腔来减小铷激射器共振线宽的建议。在使用H031模腔和石腊作涂层的圆盘状石英泡的情况下,设计了腔的几何尺寸,计算了填充因子,讨论了铷激射器的振荡条件。最后与原来的H021模腔作比较给出了线宽。  相似文献   

15.
We examine the effects of driving field linewidth on a one-atom dressed state laser. Unexpectedly, the linewidth leads to anomalous effects on the cavity field. The mean photon number of the cavity field is raised or the normalized variance is reduced to a certain degree as the linewidth increases for an appropriate range of parameters. The responsible mechanism is attributed to the fluctuation-induced modification of the electromagnetic reservoir where the atom stays.  相似文献   

16.
林功伟  杨洁  钮月萍  龚尚庆 《中国物理 B》2016,25(1):14201-014201
We present a quantum-theoretical treatment of cavity linewidth narrowing with intracavity electromagnetically induced transparency(EIT). By means of intracavity EIT, the photons in the cavity are in the form of cavity polaritons:bright-state polariton and dark-state polariton. Strong coupling of the bright-state polariton to the excited state induces an effect known as vacuum Rabi splitting, whereas the dark-state polariton decoupled from the excited state induces a narrow cavity transmission window. Our analysis would provide a quantum theory of linewidth narrowing with a quantum field pulse.  相似文献   

17.
弱耦合光纤光栅外腔半导体激光器   总被引:2,自引:0,他引:2  
安宏林  林祥芝 《光学学报》1996,16(8):030-1035
报道作者对单频窄宽光纤光栅外腔半导体激光器的一些研究结果。理论上分析了外腔的引入对激光器的阈值增益和光谱线宽的影响,实验上用自行研制的光纤布拉格反射滤波器(FBR)与普通多纵模半导体激光耦合,在1.55μm波段,得到边模抑制比大于25dB,线宽小于60kHz的激光输出。  相似文献   

18.
袁纵横  刘永智  扬亚培 《光学学报》2000,20(8):112-1116
分析了内置式光纤法布里-珀罗磁场传感器的灵敏度及光源线宽对灵敏度的影响。结果表明,光源线宽愈窄,灵敏度愈高;法布里-珀罗腔的反射率在红宽和腔长一定时,有一最佳值。反射率取最佳值时,探测的磁场最小,灵敏度最高。  相似文献   

19.
半导体激光器的线宽压窄及频率连续调谐   总被引:2,自引:0,他引:2  
我们利用共焦F—P腔光学弱反馈技术,实现了单模GaAlAs半导体激光器线宽压窄、频率锁定及连续调谐。其线宽从自由运转时的10MHz被压窄到45kHz,并可将频率锁定于共焦F—P腔。实验证明,在弱反馈情况下,激光器的频率连续调谐范围与共焦FP腔的光强反馈量近似成正比,实现了在铷原子D2线附近1.2GHz的频率连续调谐,  相似文献   

20.
We theoretically investigate cavity-linewidth narrowing by means of voltage-controlled induced transparency in asymmetric double quantum dot system. The impact of voltage on frequency pulling and cavity linewidth narrowing is discussed. The linewidth and position of the cavity transmission can be engineered by the bias voltage. The scheme may be useful in designing novel optoelectronic devices.  相似文献   

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