Effect of quantizing magnetic field on the spectrum and damping of polaritons in double two-dimensional electronic systems

Nonradiative (surface and bulk) polaritons in a semiconductor structure composed of two heterojunctions GaAs/Al_xGa_1?x As are investigated under the integer quantum Hall effect (IQHE) conditions. The dispersive, polarization, and energy characteristics of these polaritons are determined including energy dissipation in the two-dimensional electron semiconductor layers. The phase and group velocities of surface and bulk polaritons are shown to be quantized under the IQHE conditions. It is found that resonance coupling of two surface polariton modes may occur in double GaAs/Al_xGa_1?x As heterojunctions. Possible experimental observation of nonradiative polaritons is discussed.     

Fabrication and characterization of Cu–CdSe–Cu nanowire heterojunctions

The Cu–CdSe–Cu nanowire heterojunctions were fabricated by sequential electrochemical deposition of layers of Cu metal and CdSe semiconductor within the nano-pores of anodic alumina membrane templates. X-ray diffraction reveals the cubic phase for Cu and hexagonal phase for CdSe in the electrodeposited Cu–CdSe–Cu nanowire heterojunctions. The composition of the nanowire heterojunction segments is characterized by energy dispersive X-ray spectroscopy. The morphological study of nanowire heterojunctions has been made using scanning electron microscope and high resolution transmission microscopy. The nanowire heterojunctions grown in 100 and 300 nm nano-pore size templates have been found to have optical band gaps of 1.92 and 1.75 eV, respectively. The absorption spectra of 100 nm nanowire heterojunctions show a blue shift of 0.18 eV. The collective nonlinear current–voltage (I–V) characteristics of the 300 and 100 nm nanowire heterojunctions show their rectifying and asymmetric behaviour, respectively.     

Multilayer Structure Photovoltaic Cells

The optical and electrical characteristics of heterojunction organic photovoltaic cells consisting of tin–phthalocyanine as a p-type semiconductor and fullerene as an n-type semiconductor were studied using multiple-layer structures incorporating two hetero-junctions. In order to prevent formation of a reverse heterojunction, an ultra-thin layer of Au clusters was set between dual heterojunctions. The power conversion efficiencies of the cells were evaluated and the efficiency of the cell with two incorporated heterojunctions was found to be 4.5 times greater than that of a single hetero-junction. By using surface plasmon polaritons, the power conversion efficiency of an Al/C⋐70/SnPc/Au cell was enhanced and increased by a factor of 3.     

Application of ferromagnetic resonance method to study of multilayer nanostructures

The ferromagnetic resonance spectra of multilayer nanostructures synthesized from magnetic layers based on amorphous Co₄₅Fe₄₅Zr₁₀ and nonmagnetic layers of the amorphous semiconductor α-Si have been experimentally studied. It is shown that the character of the spectrum depends strongly on thicknesses of magnetic and nonmagnetic layers and the structure of the boundary layer. The resonant fields are calculated within the effective-medium approximation. In some cases, the calculation results describe well the experimental data.     

Geometry-induced electron doping in periodic semiconductor nanostructures

Recently, new quantum features have been observed and studied in the area of nanostructured layers. Nanograting on the surface of the thin layer imposes additional boundary conditions on the electron wave function and induces G-doping or geometry doping. G-doping is equivalent to donor doping from the point of view of the increase in electron concentration n. However, there are no ionized impurities. This preserves charge carrier scattering to the intrinsic semiconductor level and increases carrier mobility with respect to the donor-doped layer. G-doping involves electron confinement to the nanograting layer. Here, we investigate the system of multiple nanograting layers forming a series of hetero- or homojunctions. The system includes main and barrier layers. In the case of heterojunctions, both types of layers were G-doped. In the case of homojunctions, main layers were G-doped and barrier layers were donor-doped. In such systems, the dependence of n on layer geometry and material parameters was analysed. Si and GaAs homojunctions and GaAs/AlGaAs, Si/SiGe, GaInP/AlGAs, and InP/InAlAs heterojunctions were studied. G-doping levels of 10¹⁸–10¹⁹ cm⁻³ were obtained in homojunctions and type II heterojunctions. High G-doping levels were attained only when the difference between band gap values was low.     

Photosensitivity spectra of a gallium arsenide heterojunction with amorphous arsenic trisulfide

We present a study of the photoresponse spectrum of heterojunctions ofn-GaAs with amorphous As₂S₃ films with various thicknesses of the glassy chalcogenide semiconducting film. We obtain an expression to calculate the fraction of the light absorbed in the glassy semiconductor, the fraction of the light absorbed in GaAs, taking into account the multiple reflections at the interfaces in the structure under study, and also their ratio. We present an analysis of the absorption of light in the structure. The calculated results show good agreement with experiment. University of Kaliningrad, Kaliningrad. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 42, No. 1, pp. 3–8, January, 1999.     

Polarized photosensitivity of the heterojunctions p-Ge-n-CdGeP2<In>

The photoelectric properties are analyzed of heterojunctions obtained by heaping layers of germanium on oriented supports from CdGeP₂. It is discovered that as a result of the appearance of absorption anisotropy in the heterojunctions under illumination from the side of the germanium, polarized photosensitivity arises, and in the spectra of the natural photopleochroism, maxima are observed in the region of energies below 1.72 eV at 300 K. The high polarized photosensitivity yields a basis for recommending the heterojunctions obtained for use as photoanalyzers of linearly polarized radiation.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 28–30, January, 1991.     

Defect detection in semiconductor layers with built-in electric field with the use of cathodoluminescence

Cathodoluminescence (CL) in scanning electron microscopy (SEM) is commonly accepted as revealing local properties of a specimen region illuminated by an electron beam. CL is widely used to visualize defects in semiconductor structures. However, the presence of a strong electric field in, for example, heterojunctions or p–n junctions causes a separation of generated electron–hole (e–h) pairs and suppresses recombination in the specimen region excited by the beam. As a result CL – a radiative recombination – becomes quenched. At the same time, electron beam-induced current (EBIC) flows throughout the structure, which may produce secondary electroluminescence that is registered by the CL detector. Consequently, the CL measurement is distorted and if there are defects in the structure, they remain unrevealed. The current study shows that registration of the CL signal for different values of electron beam current (including high ones) enables true defect detection in semiconductor layers with built-in electric field. Results for a special test structure prepared with focused ion beam on AlGaAs/GaAs laser heterostructures with an 8 nm InGaAs quantum well are presented.     

Effect of magnetic film thickness on rectifying properties of La0.8Sr0.2MnO3/TiO2 heterostructures

The La_0.8Sr_0.2MnO₃ (LSMO)/ TiO₂ heterostructures with different thicknesses of the LSMO films were successfully synthesized using the RF magnetron sputtering technique. Excellent rectifying characteristics are presented in all heterostructures in a wide temperature range. The differences of the diffusive potentials for three heterojunctions are very little at 300 K. The samples exhibit a high resistance that plays an important role on their rectifying properties. The diffusive potential decreases with increasing temperature. The result is attributed to both the reduction of the thickness of the deletion layer due to the thermal diffusion and the modulation of the interfacial electronic structure of the heterostructures. The metal-insulator (M-I) transition is observed clearly from the single LSMO layers and the LSMO/ TiO₂ p-n heterojunctions.     

a-Si: H/a-C: H amorphous semiconductor superlattices

A new type of amorphous semiconductor superlattices consisting of alternating layers of a-Si: H and a-C: H has been synthesized by r.f. plasma deposition in a single-chamber plasma reactor. The existence of well-defined layers are demonstrated by TEM studies and the in-depth profiles of the compositions obtained by Auger electron spectroscopy. In some cases, growth imperfections can be observed in the thinner layers. The changes in optical absorption gap of a-Si: H as a function of its layer thickness in the superlattices are interpreted as quantum size effects.     

Photosensitivity of GaAs: NGaP: N/GaAs (GaP) heterojunctions in linearly polarized radiation

Results are presented of investigations of the photoelectric properties of nitrided layer/GaAs (GaP) heterojunctions prepared by plasma treatment of GaAs and GaP crystals in the presence of nitrogen ions. The heterojunctions exhibited broad-band photosensitivity relative to the intensity of the natural radiation. It was established that when linearly polarized radiation is obliquely incident on the surface of nitrided layers, polarization photosensitivity occurs which is controlled by the angle of incidence Θ and increases proportionately as Θ². The spectral dependences of the induced photopleochroism are attributed to the antireflecting properties of the wide-gap layers. Nitrided-layer heterojunctions can be used as broad-band photoanalyzers for linearly polarized radiation. Zh. Tekh. Fiz. 69, 138–142 (June 1999)     

Role of surface antisite defects in the formation of heterojunctions

Fermi level pinning positions were measured for Si overlayers on cleaved, n-type GaAs and GaP substrates. The observed positions are 0.73 ± 0.1 eV and 0.98 ± 0.1 eV above the top of the substrate valence band. Theoretical calculations of the surface antisite acceptor levels predict the same chemical trend on going from GaAs to GaP. This agreement and other arguments suggest an important role for surface defects in the formation of semiconductor heterojunctions.     

Fano resonances and electron localization in heterobarriers

A study is made of electron tunneling in semiconductor heterostructures having a complex dispersion law. A generalized Fabry-Perot approach is used to describe tunneling across the barrier. Mixing of electron states at the heterojunctions is responsible for the asymmetric resonant structure of the transmission which is characterized by a resonance-antiresonance pair. The resonance corresponds to a pole while the antiresonance corresponds to a zero of the scattering amplitude in the complex energy plane, i.e., near the pole and the zero the transmission of the heterobarrier has a Fano resonance structure. It is shown that for certain barrier parameters the resonances may collapse and localized states may appear in the heterobarrier, which is observed on the current-voltage characteristics of the barriers. The two-valley model of a GaAs/Al_xGa_1?x As/GaAs heterostructure is considered as an example. An analysis is made of the resonance structure in the barrier as a function of the type of boundary conditions used for the heterojunctions. The low-temperature current-voltage characteristic of the barrier is calculated.     

Transition region width of nanowire hetero- and pn-junctions grown using vapor–liquid–solid processes

The transition region width of nanowire heterojunctions and pn-junctions grown using vapor–liquid–solid (VLS) processes has been modeled. With two constituents or dopants I and II, the achievable width or abruptness of the junctions is attributed to the residual I atom/molecule stored in the liquid droplet at the onset of introducing II to grow the junction, and the stored I atom/molecule consumption into the subsequently grown crystal layers. The model yields satisfactory quantitative fits to a set of available Si-Ge junction data. Moreover, the model provides a satisfactory explanation to the relative junction width or abruptness differences between elemental and compound semiconductor junction cases, as well as a guideline for achieving the most desirable pn-junction widths. PACS 81.07.-b; 64.75.Jk; 61.46.Km     

Energy spectrum and quantum magnetotransport in type-II heterojunctions

Specific features of the energy spectrum of a separated type-II heterojunction in an external magnetic field are studied theoretically and experimentally. It is shown that, due to hybridization of the states of the valence band of one semiconductor and the conduction band of the other semiconductor at the heterointerface, there are level anticrossings, which produce quasigaps in the density of states in a nonzero magnetic field. The experimental results of magnetotransport studies for the GaInAsSb/p-InAs quaternary solid solutions with different doping levels are shown to agree well with the results of simulation, and specific features of the energy spectrum of separated type-II heterojunctions are established.     

Organic heterojunctions of layered perylene and phthalocyanine dyes: characterization with UV-photoelectron spectroscopy and luminescence quenching

We present here the characterization of organic/organic′ heterojunctions created from either of two perylene dyes, perylenetetracarboxylicdianhydride (PTCDA) or the bisimide derivative perylenetetracarboxylicdianhydride-N,N′-bis (butyl)imide (C4-PTCDI), and two chloro-metallated donor phthalocyanines (ClAlPc or ClInPc). The perylene dyes were selected to create thin films with the core of the perylene dye parallel to the substrate plane (PTCDA) or nearly vertical to the substrate plane, with layer planes defined by the butyl substituents (C4-PTCDI). We compare the frontier orbital offsets revealed by UV-photoelectron spectroscopy, and quenching of luminescence of the perylene dyes, as a function of Pc coverage. The ionization potentials (IPs) of the Pc layers, the degree to which interface dipoles are formed at the Pc/perylene dye interface, and the degree of quenching of the perylene luminescence are affected by the structure of the Pc/perylene interface. Pc/PTCDA heterojunctions show significant interface dipoles and higher IPs for the first-deposited Pc layers compared to Pc/C4-PTCDI heterojunctions, which show negligible interface dipoles and lower overall IP values for initial Pc layers. Luminescence of the selectively excited perylene layers is quenched by the addition of even submonolayer coverages of Pc. This quenching process occurs as a result of both energy transfer (perylene to Pc) and charge transfer (Pc to perylene). Luminescence from monomeric and aggregated ClAlPc and ClInPc monolayers is seen on C4-PTCDI films, whereas only luminescence from the aggregated forms of these Pcs is seen on PTCDA films. These studies reveal aspects of organic heterojunction energetics which may have important implications for organic solar cell design.     

Schottky barriers in carbon nanotube heterojunctions

Electronic properties of heterojunctions between metallic and semiconducting single-wall carbon nanotubes are investigated. Ineffective screening of the long-range Coulomb interaction in one-dimensional nanotube systems drastically modifies the charge transfer phenomena compared to conventional semiconductor heterostructures. The length of depletion region varies over a wide range sensitively depending on the doping strength. The Schottky barrier gives rise to an asymmetry of the I-V characteristics of heterojunctions, in agreement with recent experimental results by Yao et al. and Fuhrer et al. Dynamic charge buildup near the junction results in a steplike growth of the current at reverse bias.     

Ferromagnetic resonance, magnetic properties, and resistivity of (CoFeZr)x(Al2O3)1 ? x/Si multilayer nanostructures

Comparative investigations of static magnetic properties, magnetoresistance, and ferromagnetic resonance data of multilayer nanostructures consisting of CoFeZr-Al₂O₃ composite magnetic layers and amorphous silicon semiconductor spacers were performed in a layer thickness range below 5 nm. The influence of layer dimension parameters and chemical peculiarities of silicon on the inner structure and type of magnetic interactions in nanostructures with 35 and 46 at % magnetic phase composite layers is discussed.     

飞秒时间分辨的能谱分析光电子显微镜：异质结超快载流子动力学测量

本文成功搭建了一套集成了能谱分析功能的时间分辨光电子显微镜系统(TR-PEEM),能够对电子密度分布进行时间分辨和能量分辨的成像.这套4D显微镜在空间、时间、能量多维度获取电子动力学信息提供了前所未有的手段.本文使用184 fs的时间分辨、150 meV的能量分辨和优于150 nm的空间分辨对半导体进行了测量,在Si(111)表面的Pb岛上获得了微区光电子能谱和能量分辨的TR-PEEM图像.实验结果表明,这套系统是进行异质结载流子动力学观察的有力工具,有助于在亚微米/纳米空间尺度和超快时间尺度上加深对半导体性质的理解.     

Theoretical study of the thermodynamic stability and electronic structure of thin films of 3C, 2H,and 2D silicon carbides

Silicon carbide is among the most common materials used in semiconductor engineering. Silicon carbide thin films are attractive from the standpoint of designing devices based on heterojunctions. This is due to a characteristic feature of this compound, such as polytypism, leading to the difference in the physical properties and also hampering the preparation of high-quality material samples. In this work, the thermodynamic stability and electronic structure of thin films based on the polytypes 3C, 2H, and 2D with a thickness of a few nanometers have been studied.