球形及柱形磁化等离子体靶中α粒子能量沉积率分析

基于单粒子理论模型及积分算法,编写了单粒子轨道数值模拟程序———ALFA,分析了柱形和球形两种边界位形磁化等离子体靶中非热α粒子通过库仑碰撞对D-T等离子体加热的能量沉积率。在均匀背景磁场及相同的D-T等离子体密度、温度条件下,柱形边界中非热α粒子能量沉积率比球形边界更高。在相同等离子体温度及密度条件下,α粒子的能量沉积率随磁场的增大而增大,但计算结果表明,磁场的有效作用区域存在明显的上下限值,当等离子体内磁场小于下限阈值时,磁场增加对α粒子能量沉积率的提高贡献不大,而且当等离子体内磁场超过上限阈值后,磁场再增加对提高α粒子能量沉积率的作用也不明显。对不同几何尺寸的磁化等离子体靶,磁场有效作用区域的上下限值不同,靶尺寸越大,相应的上下限阈值越小。提高等离子体密度,可增加α粒子能量沉积率,也能降低磁场有效作用区域的上下限阈值。     

类ITER偏滤器瓦片表面热流沉积的粒子模拟

使用热侵蚀沉积粒子程序(HEDPIC)模拟了由小块沿环向表面倾斜的瓦片组成类 ITER 偏滤器的极向 缝隙附近瓦片表面的热流密度分布,研究了不同倾斜高度对热流密度分布的影响。研究结果表明,当瓦片设置成 合适的倾斜角度时,瓦片上表面靠近缝隙附近的电子热通量为零;离子热流密度小于上表面远离缝隙的热流密度, 棱边处热流密度过高的问题得到解决。      

Be原子在Be基底上的沉积过程研究

利用分子动力学方法模拟了Be原子在Be基底上的沉积过程. 模拟了沉积粒子不同入射动能条件下, 沉积薄膜表面形态的差异. 在一定能量范围内, 增加粒子入射动能可以减小薄膜的表面粗糙度. 但是, 过高的入射动能, 不利于减小薄膜表面粗糙度. 通过沉积薄膜中原子配位数以及单个原子势能沿薄膜厚度的分布, 分析沉积原子入射动能对于薄膜及表面结构的影响. 沉积动能较大时, 薄膜的密度较大; 单个原子势能沿薄膜厚度分布较为连续; 同时薄膜中原子应力沿薄膜厚度分布较为连续. 最后, 分析了沉积粒子能量转化的过程、粒子初始动能对基底表面附近粒子局部动能增加的影响.     

入射能量对Au/Au(111)薄膜生长影响的分子动力学模拟

利用分子动力学模拟了Au原子在Au(111)表面低能沉积的动力学过程.采用嵌入原子方法的原子间相互作用势,通过对沉积层原子结构的分析和薄膜表面粗糙度、层覆盖率的计算,研究了沉积粒子能量对薄膜质量的影响及其机制.结果表明:当入射能量Ein25 eV时,沉积层和基体表层均呈现规则的单晶面心立方(111)表面的排列,沉积原子仅注入到基体最表面两层,随着入射能量的增加,薄膜表面粗糙度降低,薄膜越趋于层状生长,入射能量的增加有利于薄膜的成核和致密化;当Ein 25 eV时,沉积层表面原子结构出现了较为明显的晶界,沉积原子注入到基体表面第三层及以下,随着入射能量的增加,薄膜表面粗糙度增加,沉积层和基体表层原子排列越不规则,载能沉积会降低基体内部的稳定性,导致基体和薄膜内部缺陷的产生,降低薄膜质量.此外,当基体内部某层沉积原子数约等于该层总原子数的一半时,沉积原子将能穿过该层进入到基体内部更深层.     

浴法抛光中抛光粉粒径对去除效果影响的试验研究

为了分析抛光粉粒径对材料去除效果的影响,选用不同的平均粒径以及不同比例混合氧化铈抛光粉分别对K9玻璃进行了抛光试验。对抛光后的工件表面粗糙度及去除量进行了定量研究。结果表明,在试验条件相同的情况下,不同平均粒径的抛光粉,粒径越小,抛光后的元件表面粗糙度越好。从使用不同比例的混合抛光粉试验中可以看出,粒度的均匀性是影响工件表面粗糙度的重要因素。结合抛光粉粒度分布图和试验结果可以看出,抛光粉粒子的分布范围越小,以及各粒径大小分布在峰值附近的粒子所占体积百分比越接近,加工后的工件表面粗糙度越小。     

二氧化锆薄膜表面粗糙度的研究

采用电子束蒸发工艺,利用泰勒霍普森相关相干表面轮廓粗糙度仪,研究了不同基底粗糙度、不同二氧化锆薄膜厚度以及不同的离子束辅助能量下所沉积的二氧化锆薄膜的表面粗糙度。结果表明：随着基底表面粗糙度的增加,二氧化锆薄膜表面粗糙度呈现出先缓慢增加,当基底的粗糙度大于10nm后呈现快速增加的趋势;随着二氧化锆薄膜厚度的增加,其表面均方根粗糙度（RMS）先减小后增大;随着辅助沉积离子能量的增加,其表面粗糙度呈现出先减小后增加的趋势。     

溅射过程中粒子能量对钛薄膜表面形貌影响

借助于原子力显微镜研究了离子束溅射沉积工艺中入射离子能量对制备的Ti薄膜表面形貌的影响。对薄膜表面高度数据进行相关运算，发现在此工艺条件下制备的薄膜具有典型的分形特征，利用分形表面高度—高度相关函数的唯象表达形式对不同能量下制备Ti薄膜表面的高度相关函数进行拟合。得到了薄膜表面的分形维数、水平相关长度、标准偏差粗糙度等参量。研究发现，入射Ar离子能量在300—700eV之间薄膜表面的粗糙度随着沉积粒子的能量增加而增大，分形维数随着入射离子能量的增加而减少。另外，在得到的分形维数基础上对不同溅射电压下Ti薄膜的生长机制进行了初步研究。     

沉积粒子能量对薄膜早期生长过程的影响

利用Monte Carlo(MC)模型研究了能量粒子对薄膜生长的初始阶段岛膜的形貌和岛的尺寸的影响,沉积粒子的能量范围为:0—0.7eV.在模型中考虑了原子沉积、吸附原子扩散和蒸发等过程,并详细考虑了临近和次临近原子的影响.结果表明,在所采用的参量范围内不同的基底温度情况下,能量粒子的影响有很大的区别.低基底温度情况下,沉积粒子强烈地影响着薄膜的生长过程中,岛膜的形貌、数量和尺寸随能量粒子的能量增加而有很大的变化.分析表明,这些变化都是由于能量粒子的介入使得表面吸附粒子的扩散能力增强所致 关键词： 薄膜生长 Monte Carlo方法 扩散     

低能氢粒子沿不同角度轰击钨(001)表面的反射概率及入射深度分布的分子动力学研究

采用分子动力学方法对低能(0.5–50.0 eV)氢粒子 与钨表面的相互作用进行了模拟研究.研究发现, 当氢粒子垂直入射, 能量为0.5–20.0 eV时, 粒子滞留在钨内部的概率急速增加, 在整个模拟能量区间内, 发生反射过程的概率逐渐减少, 但反射过程始终占主导. 改变粒子的入射角度, 在某些能量范围内滞留概率虽有所增加, 但氢原子被反射现象仍然占主导. 通过进一步观察低能氢粒子在钨块内的入射深度和能量变化, 计算出其在钨块中的能量沉积分布. 这些结果对理解聚变反应中 钨材料的选用优势以及氢或氢同位素滞留有重大意义. 此外, 在所研究的能量范围内, 分子动力学方法的模拟结果与以二体理论为基础的TRIM程序的模拟结果之间有明显差异, 说明传统的二体碰撞理论不能很好地描述低能碰撞问题. 关键词： 面向等离子体材料 分子动力学方法 钨 氢     

激光驱动尾波场加速电子诱导光核嬗变

提出了一种基于激光尾波场加速电子诱导光核嬗变的优化方案并开展了135Cs光核嬗变的数值模拟研究。蒙特卡罗模拟研究发现随着电子能量的增加，嬗变产额逐渐趋于饱和，单位能量电子的嬗变效率在40 MeV附近时存在峰值，半高处能量为20、120 MeV。为了提升半高处能量内的电子电量从而优化嬗变产额，使用粒子模拟程序研究了超短超强激光在气体等离子体中的传输过程。研究结果发现，随着等离子体密度的降低，尾波场加速的电子能量逐渐升高，但是电荷量逐渐减少，并且圆偏振激光加速的电子能量和电荷量均优于线偏振激光。通过调整等离子体密度和激光偏振，发现在圆偏振激光和特定等离子体密度条件下，存在嬗变产额的最优值。利用电导率等效方法对345 GHz折叠波导行波管中的电磁信号的传输损耗进行了仿真研究，考察了流通管孔径、加工粗糙度等对冷腔传输损耗的影响，流通管孔径较大或加工粗糙度较大都会导致电磁信号传输衰减严重。还模拟分析了热腔中电磁信号衰减对慢波结构净增益、带宽、最佳周期数等器件特征参数的影响，结果显示，电磁信号衰减会使得增益下降和带宽降低。     

Molecular dynamics and experimental studies on deposition mechanisms of ion beam sputtering

Molecular dynamics (MD) simulation and experimental methods are used to study the deposition mechanism of ionic beam sputtering (IBS), including the effects of incident energy, incident angle and deposition temperature on the growth process of nickel nanofilms. According to the simulation, the results showed that increasing the temperature of substrate decreases the surface roughness, average grain size and density. Increasing the incident angle increases the surface roughness and the average grain size of thin film, while decreasing its density. In addition, increasing the incident energy decreases the surface roughness and the average grain size of thin film, while increasing its density. For the cases of simulation, with the substrate temperature of 500 K, normal incident angle and 14.6 × 10⁻¹⁷ J are appropriate, in order to obtain a smoother surface, a small grain size and a higher density of thin film. From the experimental results, the surface roughness of thin film deposited on the substrates of Si(1 0 0) and indium tin oxide (ITO) decreases with the increasing sputtering power, while the thickness of thin film shows an approximately linear increase with the increase of sputtering power.     

Kinetic Monte Carlo simulation of thin film growth

A three-dimensional kinetic Monte Carlo technique has been developed for simulating growth of thin Cu films. The model involves incident atom attachment, diffusion of the atoms on the growing surface, and detachment of the atoms from the growing surface. The related effect by surface atom diffusion was taken into account. A great improvement was made on calculation of the activation energy for atom diffusion based on a reasonable assumtion of interaction potential between atoms. The surface roughness and the relative density of the films were simulated as the functions of growth substrate temperature and film thickness. The results showed that there exists an optimum growth temperatureT _opt at a given deposition rate. When the substrate temperature approaches toT _opt, the growing surface becomes smoothing and the relative density of the films increases. The surface roughness minimizes and the relative density saturates atT _opt. The surface roughness increases with an increment of substrate, temperature when the temperature is higher thanT _opt.T _opt is a function of the deposition rate and the influence of the deposition rate on the surface roughness depends on the substrate temperatures. The simulation results also showed that the relative density decreases with the increasing of the deposition rate and the average thickness of the film.     

Systematic investigation of the reactive ion beam sputter deposition process of SiO<Subscript>2</Subscript>

Ion beam sputter deposition (IBSD) is an established physical vapour deposition technique that offers the opportunity to tailor the properties of film-forming particles and, consequently, film properties. This is because of two reasons: (i) ion generation and acceleration (ion source), sputtering (target) and film deposition (substrate) are locally separated. (ii) The angular and energy distribution of sputtered target atoms and scattered primary particles depend on ion incidence angle, ion energy, and ion species. Ion beam sputtering of a Si target in a reactive oxygen atmosphere was used to grow SiO₂ films on silicon substrates. The sputtering geometry, ion energy and ion species were varied systematically and their influence on film properties was investigated. The SiO₂ films are amorphous. The growth rate increases with increasing ion energy and ion incidence angle. Thickness, index of refraction, stoichiometry, mass density and surface roughness show a strong correlation with the sputtering geometry. A considerable amount of primary inert gas particles is found in the deposited films. The primary ion species also has an impact on the film properties, whereas the influence of the ion energy is rather small.     

Effect of the substrate temperature and deposition rate on the initial growth of thin lithium niobate-tantalate films deposited from a thermal plasma

Thin lithium niobate-tantalate (LiNb_0.5Ta_0.5O₃) films are studied at the initial stage of deposition from a thermal plasma. The effect of two deposition parameters (the substrate temperature and the deposition rate) on the film morphology, the film crystallinity, and the density of nuclei growing on a (0001) sapphire substrate are investigated. It is shown that the crystalline structure and roughness of a film are determined, for the most part, in the initial growth stage and therefore depend directly on both parameters. At the optimum temperatures and growth rates for obtaining good characteristics of (0006) texture, crystallinity, and surface roughness of the films, the film nuclei on the substrate have a high density and good epitaxial orientation to it. If the growth conditions are not optimum, the islands are either amorphous or have a low density on the substrate surface. The nucleation activation energy is observed to decrease as the deposition rate increases, which supports the assumption that the species that are active in film deposition are “hot” clusters forming in an oxygen-argon plasma in the immediate vicinity of the substrate.     

Z箍缩内爆过程中的能量转换机制研究

利用一维三温辐射磁流体力学程序对氖气和铝丝阵Z箍缩内爆过程中的能量转换过程进行了详细的数值研究，发现在内爆过程中离子和电子之间的碰撞能量交换是最主要的能量交换过程，其次是电子和光子之间的光电过程和轫致过程，而康普顿散射过程中的能量交换可以忽略不计；辐射出的x射线主要是在光电激发和光电复合过程中产生的，其次是在轫致辐射过程和康普顿散射过程中产生的.理论分析表明，辐射出的x射线能量可以超过，也可能小于其等离子体最大动能.数值模拟结果表明，在氖气Z箍缩中，辐射出的x射线能量没有超过其等离子体最大动能，而在铝丝阵列内爆中，辐射出的x射线能量超过了其等离子体最大动能，但小于磁压所做的功；在整个Z箍缩过程中欧姆加热能量是较小的. 关键词： Z箍缩 能量转换 x射线辐射     

高能多脉冲辐射照相的复合靶物理分析

 介绍了电子束与钽靶相互作用的能量沉积解析理论和（钽-碳）复合靶的设计。单靶的某个区域内形成的高温等离子体沿轴的2个方向(±z)溅射而使单靶穿孔,大焦斑束形成较小的孔,小焦斑下靶孔较大而相对光滑。复合靶或修正复合靶可以经受2~3个束脉冲的连续照射。蒙卡模拟计算表明,复合靶或修正复合靶的焦斑尺寸与单靶相同,可用于多脉冲闪光照相。     

直流磁控溅射制备AlN薄膜的结构和表面粗糙度

采用直流磁控反应溅射法,在Si(111)基底上成功制备了多晶六方相AlN薄膜.研究了溅射过程中溅射气压对薄膜结构和表面粗糙度的影响.结果表明:当溅射气压低于0.6 Pa时,薄膜为非晶态,在傅里叶变换红外光谱中,没有明显的吸收峰;当溅射气压不低于0.6 Pa时,薄膜的X射线衍射图中均出现了六方相的AlN(100)、(11...     

Investigation of interface roughness cross-correlation properties of optical thin films from total scattering losses

The interface roughness and interface roughness cross-correlation properties affect the scattering losses of high-quality optical thin films. In this paper, the theoretical models of light scattering induced by surface and interface roughness of optical thin films are concisely presented. Furthermore, influence of interface roughness cross-correlation properties to light scattering is analyzed by total scattering losses. Moreover, single-layer TiO₂ thin film thickness, substrate roughness of K9 glass and ion beam assisted deposition (IBAD) technique effect on interface roughness cross-correlation properties are studied by experiments, respectively. A 17-layer dielectric quarter-wave high reflection multilayer is analyzed by total scattering losses. The results show that the interface roughness cross-correlation properties depend on TiO₂ thin film thickness, substrate roughness and deposition technique. The interface roughness cross-correlation properties decrease with the increase of film thickness or the decrease of substrates roughness. Furthermore, ion beam assisted deposition technique can increase the interface roughness cross-correlation properties of optical thin films. The measured total scattering losses of 17-layer dielectric quarter-wave high reflection multilayer deposited with IBAD indicate that completely correlated interface model can be observed, when substrate roughness is about 2.84 nm.     

大面积表面波等离子体源微波功率吸收的数值模拟研究

建立了大面积矩形表面波等离子体(SWP)源全尺寸的三维模型,用数值模拟的方法研究了SWP源基于碰撞的功率吸收问题,给出了随等离子体参数变化的微波反射率曲线,分析了不同天线对微波功率沉积的影响,并讨论了微波功率吸收和表面波的定性关系. 结果发现,均匀放电的SWP源功率沉积本质是由表面波等离子体的性质决定的,等离子体密度太大或太小都不利于功率吸收. 在正常工作气压下,SWP源通过碰撞机理即可以实现微波功率的有效沉积,微波吸收率可达80%以上,与已有实验相符. 本研究同时发现,天线阵列激发的表面波模式越紧凑,强度越大,越有利于微波的吸收. 关键词： 时域有限差分法 等离子体表面波 功率吸收 狭缝天线