N-DBR和双氧化限制层对VCSEL电、光、热特性的影响

根据增益波导垂直腔面发射激光器直接耦合的准三维理论模型,通过有限差分法对注入电流密度、载流子浓度、光场和热场分布方程求自洽解.研究了垂直腔面发射激光器的电、热和光波导特性,同时提出了一种具有双氧化限制层的增益波导垂直腔面发射激光器结构,并通过对比研究了N-型分布布喇格反射镜和双氧化限制层对增益波导垂直腔面发射激光器特性的影响.计算结果表明,如果忽略N-型分布布喇格反射镜的影响将与实际的垂直腔面发射激光器有较大偏差;双氧化限制层结构对激光器特性有较大的改善,它为增益波导垂直腔面发射激光器提供了一种降低阈值,抑制高阶横模的方法.     

n型DBR中电势对垂直腔面发射激光器阈值的影响

编制了增益波导垂直腔面发射激光器直接耦合准三维仿真软件，给出了电势、 载流子浓度、光场和热场分布.计算结果表明，只有同时考虑p型和n型分布布拉格反射镜中的电势，才能准确地反映垂直腔面发射激光器的阈值特性. 关键词： 垂直腔面发射激光器 p型DBR层 n型DBR层 有限差分法     

电流孔的尺寸对双氧化限制垂直腔面发射激光器阈值的影响

通过双氧化限制垂直腔面发射激光器中电场、载流子密度、光场和热场空间耦合方程自洽数值求解,研究了垂直腔面发射激光器中阈值特性.得到了氧化层及有源区附近的电势,模拟电流孔的边缘效应,给出了不同双氧化限制电流孔半径下阈值电流密度、载流子密度、基模光场和热场的空间分布.发现了实现最小阈值电流的最佳限制电流孔半径,进而设计了双氧化限制垂直腔面发射激光器的结构. 关键词： 双氧化限制垂直腔面发射激光器 自洽 阈值     

增益波导垂直腔面发射激光器中的模式分析及实验研究

本文研究了增益波导垂直腔面发射激光器的横向及纵向模式特性。采用二维延伸抛物型复折射率波导结构从理论上分析了增益波导垂直腔面发射激光器中模式的横向电场分布、模式间隔、模式增益对远场分布图和光束发射角、耦合效率等.实验中在阈值电流之上既观测到稳定的基模工作,也观测到高阶非简并模工作等不同的光谱结构及远场分布,理论和实验基本吻合.     

1.3μm GaAs基量子点垂直腔面发射激光器结构设计与分析

结合垂直腔面发射激光器（VCSEL）原理以及量子点增益特点，计算了不同结构VCSEL的腔内损耗和量子点的模式增益.分析了激光器阈值特性以及氧化限制层对光损耗的影响.设计了含 氧化限制层的13μm量子点VCSEL结构. 关键词： 量子点 垂直腔面发射激光器 增益     

吸收对垂直腔面发射激光器光学特性的影响

采用光学传输矩阵方法，详细分析了反射镜以及键合界面的吸收对垂直腔面发射激光器光学特性的影响. 结果表明，反射镜以及键合界面的吸收对反射镜和垂直腔面发射激光器的反射率和势透射率有较大影响，而对反射镜中心波长处的反射相移以及垂直腔面发射激光器模式的反射相移和模式位置影响很小. 随着反射镜以及键合界面的吸收增大，反射镜中心波长处的反射率逐渐减小，垂直腔面发射激光器的模式反射率变化则是先急剧减小，达到一个极小值，然后再逐渐增大，而反射镜中心波长处以及垂直腔面发射激光器模式处的势透射率则都是迅速降低的. 此外，将有吸收的键合界面离有源区的距离远一些，有利于提高垂直腔面发射激光器模式处的光输出效率.     

载流子输运和寄生参数对隧道再生双有源区垂直腔面发射激光器调制特性的影响

建立了一种适用于多量子阱和多有源区的多层速率方程模型. 通过小信号分析,得到了光子密度、载流子俘获、逃逸和隧穿时间等关键参数对单有源区和隧道再生双有源区垂直腔面发射激光器频率响应特性的影响,并分析了在相同驱动电流下隧道再生双有源区器件调制带宽大于单有源区器件的原因. 进一步研究了隧道再生双有源区内腔接触氧化限制型垂直腔面发射激光器的寄生电参数及其寄生电路,对其频率响应进行了模拟分析. 关键词： 垂直腔面发射激光器 速率方程 调制特性 隧道再生     

利用光学薄膜模型研究垂直腔面发射激光器的光学特性

可以把垂直腔面发射激光器看作是多层光学薄膜,应用光学薄膜原理对其光学薄膜的特性进行了研究。计算分析了布拉格反射镜和谐振腔模的反射谱受器件结构变化的影响。通过利用菲涅耳系数矩阵法计算,得到了光在垂直腔面发射激光器器件结构中形成的驻波场分布。结果表明,利用菲涅耳系数矩阵法设计垂直腔面发射激光器的光学薄膜是一种快捷准确的方法。     

表面液晶-垂直腔面发射激光器阵列的热特性

液晶与垂直腔面发射半导体激光器(VCSELs)阵列结合可实现波长可调谐、偏振精确控制等,同时液晶的引入也会改变垂直腔面发射半导体激光器阵列的热特性,本文设计了表面液晶-垂直腔面发射激光器阵列结构,并开展了阵列的热特性实验研究.对比分析了向列相液晶层对VCSEL阵列热特性的影响,实验结果表明,1×1,2×2,3×3三种表面液晶-VCSEL阵列的阈值电流温度变化率最高可降低23.6%,热阻降低26.75%;同时,激光器阵列各发光单元之间的温度均匀性显著提高,出光孔与周围温差小于0.5℃.综上所述,VCSEL阵列中液晶层的引入不仅大大加速激光器阵列单元热量扩散,而且降低了有源区结温,提高了VCSELs激光器阵列热特性,为实现高光束质量的单偏振波长可控VCSEL激光器阵列打下了良好的理论和实验基础.     

径向桥电极高功率垂直腔面发射激光器

为改善高功率垂直腔面发射半导体激光器的热特性,提高它的输出功率,研制了新型径向桥电极高功率垂直腔面发射半导体激光器器件,对新型半导体激光器的结构模型进行理论分析表明,采用径向桥式电极可以降低器件P型DBR电阻,减小焦耳热;降低热阻,提高器件的散热能力。实验制备了出光孔径同为200μm的径向桥电极与常规电极的高功率垂直腔面发射半导体激光器,并对器件的性能进行了实验对比测试。结果表明径向桥电极高功率垂直腔面发射半导体激光器器件的微分电阻为0.43Ω;室温下最大输出功率可达340 mW,是常规电极垂直腔面发射半导体激光器的1.7倍;器件的热阻为0.095℃/mW,在80℃时,仍能正常激射,具有良好的热特性,径向桥电极高功率垂直腔面发射半导体激光器的光电特性与温度特性要远好于常规电极的高功率垂直腔面发射半导体激光器器件。     

光反馈诱发长波长垂直腔面发射激光器低功耗偏振开关

基于扩展的自旋反转模型,对光反馈诱发下长波长垂直腔面发射激光器中的低功耗偏振开关进行了理论研究.研究表明:长波长垂直腔面发射激光器在自由运行下未能获得的偏振开关现象,可以通过引入中等强度的偏振旋转光反馈来实现.对比强弱两种不同的线性色散效应,发现了一些有趣的现象:弱线性色散条件下更易于在低注入电流下获得偏振开关,并且产生偏振开关所需的反馈强度具有更大的调控范围;强色散效应中未能始终获得偏振开关,会出现两模共存区,并且偏振开关出现的注入电流值较高.同时,观察到的偏振模跳变和多偏振开关现象类似于短波长垂直腔面发射激光器,因而证实这两类激光器在偏振开关的本质规律上是相似的.此外,还对长波长垂直腔面发射激光器不易在低注入电流下获得偏振开关的原因进行了分析,并给出了合理的解释.     

宽调谐范围垂直腔面发射激光器特性分析及设计

运用光学传输矩阵和有限元方法对波长可调谐垂直腔面发射激光器(VCSELs)的波长调谐范围进行了研究.对中心波长为980nm的可调谐VCSELs的波长调谐特性和微电子机械系统(MEMS)悬臂梁结构进行了设计，并进行了实验研究.结果表明，MEMS可调谐VCSELs调谐特性同时受到光波谐振腔结构和悬臂梁最大位移的共同影响.在悬臂梁几何尺寸和激光器有源区结构一定的条件下，通过优化可调谐VCSELs的牺牲层厚度可实现大范围波长调谐.同时，对可调谐VCSELs整体结构进行了设计，计算结果显示波长调谐范围达到30nm以 关键词： 悬臂梁 可调谐垂直腔面发射激光器     

Nitride VCSEL design for continuous-wave operation of higher-order optical modes

Anticipated performance of possible designs of nitride vertical-cavity surface-emitting lasers (VCSELs) has been analyzed and compared with the aid of an advanced 3D optical–thermal–electrical self-consistent simulation. It has been revealed in the simulation that, to achieve room-temperature (RT) continuous-wave (CW) VCSEL threshold operation, uniformity of both carrier-concentration and temperature-increase distributions within VCSEL active regions are equally important. Besides, mostly because of problems with an effective confinement of an optical field in a radial direction, RT CW lasing in standard nitride VCSELs is usually easier to achieve on higher-order transverse modes than on lower-order ones. Therefore, a novel design of nitride VCSELs with double (annular and central dot) p-side contacts has been intentionally constructed to enhance an excitation of low-threshold high-order transverse optical modes. Anticipated RT CW performance characteristics of the novel design have been proved to be definitely more promising than those of other possible configurations of nitride VCSELs. In particular, our calculations have confirmed that RT CW lasing is possible in this new nitride VCSEL. Besides, this device has been found to be less sensitive (than other nitride VCSELs) to possible crystal imperfections created around an active region while high-resistive areas are formed. PACS 42.55.Px; 85.30.De; 85.60.Jb     

New functions of VCSEL-based optical devicesInvited Paper

We have seen a lot of unique features off vertical cavity surface emitting lasers (VCSELs), such as low power consumption, wafer-level testing, small packaging capability, and so on. The market of VCSELs has been growing up rapidly in recent years and they are now the key devices in local area networks using multi-mode optical fibers. In addition, new functions on VCSELs have been demonstrated. In this paper, the recent advances of VCSEL photonics will be reviewed, which include the wavelength engineering and the athermal operation based on microelectro mechanical system (MEMS) technologies. Also, this paper explores the potential and challenges for new functions of VCSELs, including high-speed control of optical phase, slow light devices, plasmonic VCSELs, and so on.     

Effect of oxide aperture on the performance of 850 nm vertical-cavity surface-emitting lasers

An experimental study has been presented of the oxide-confined vertical-cavity surface-emitting lasers (VCSELs) operating in the 850 nm region of the electromagnetic spectrum. In this regard, various relevant VCSEL samples with numerous oxide aperture sizes have been fabricated and characterized. Thorough investigations of the electrical as well as optical characteristics of the fabricated samples have been performed, which include the overall device performance as a function of the oxidize aperture sizes. It is reported that the VCSELs with oxide aperture size <10 μm require low threshold currents (<1 mA). Further, the differential quantum efficiencies up to 28% corresponding to wall-plug efficiencies of up to 15% were measured for a number of these devices.     

Comparative analysis of lasing performance of oxide-confined and proton-implanted vertical-cavity surface-emitting diode lasers

The comprehensive optical-electrical-thermal-recombination self-consistent VCSEL model is used to compare the performance of oxide-confined (OC) and proton-implanted (PI) VCSELs and to optimise their structures. Generally index-guided (IG) OC VCSELs demonstrate lower lasing thresholds whereas both gain-guided (GG) OC and PI ones manifest much better mode selectivity. Therefore, their either low-threshold IG or mode-selective GG versions may be intentionally used for different VCSEL applications. Lasing thresholds of OC IG VCSELs have been found to be very sensitive to the exact localisation of their thin oxide apertures, which should be shifted as close as possible towards the anti-node position. PI VCSELs, on the other hand, are simpler and cheaper in their manufacturing than OC ones. Although lower threshold currents are manifested by PI VCSELs with very thick implanted regions, lower threshold powers are achieved in these devices with much thicker upper unaffected layer used for the radial current flow from the ring contact towards the laser axis. Paradoxically poor thermal properties of PI VCSELs enable lower lasing thresholds of slightly detuned devices. To conclude, cheaper and mode-selective PI VCSELs may be used instead of OC ones in many of their applications provided ambient temperatures and laser outputs are not too high.     

Power and spectra polarization of large-aperture rectangular-shaped vertical-cavity top-emitting lasers

980-nm large-aperture top-emitting vertical-cavity surface-emitting lasers (VCSELs) were investigated through introducing the rectangular post. Both H-polarization (horizontal) and V-polarization (vertical) coexisted in the rectangular-shaped large-aperture VCSELs. Under the entire range of operation current, H-polarization dominated over V-polarization which was parallel to the shorter side of the rectangular output aperture. It was found that spectrum blue-shift of H-polarization light occurred with respect to V-polarization light at three different aspect ratios, and this can be explained by the dependence of longitudinal propagation constant on the aspect length. The rectangular post structure was found to be effective for polarization stabilization in broad-area VCSELs without serious degradation of light output characteristics.     

Tuning effects in optimisation of GaAs-based InGaAs/GaAs quantum-dot VCSELs

The comprehensive optical-electrical-thermal-recombination self-consistent simulation of an operation of quantum-dot (QD) VCSELs is used to optimise their structure for GaAs-based oxide-confined QD VCSELs predestinated for the second-generation 1.3-μm optical-fibre communication. It has been found that, contrary to a general belief of lasing thresholds of QD lasers inversely proportional to their density, for any design of QD VCSELs, there exists an optimal QD density ensuring its lowest lasing threshold. Besides, in intentionally strongly detuned QD VCSELs, to reach the desired 1.30-μm radiation, it is superfluous to improve uniformity of their QDs because their lasing thresholds are surprisingly distinctly lower for less uniform QDs. Then for these devices more optimal are somewhat non-uniform QDs and a necessary optical gain may be achieved with the aid of an increasing QD density.     

1550 nm垂直腔面发射激光器的特征参量随温度的变化

在采用自旋反转模型分析垂直腔面发射激光器（VCSELs）动力学行为的过程中,为了正确预测VCSELs的动力学行为,需要准确给出自旋反转模型中光场衰减速率k、总反转载流子衰减速率γ_N、线性二向色性系数γ_a、线性双折射系数γ_p、自旋反转速率γ_s和线宽增强因子α这6个特征参量.本文对1550 nm VCSELs在自由运行和平行光注入下的输出特性进行实验分析,获取了这6个特征参量的值,并着重研究了当激光器温度在10.00–30.00 ℃范围内变化时,这6个特征参量呈现的变化趋势.研究结果表明,随着温度的逐渐升高,γ_p整体呈现逐渐增加的趋势,γ_a,γ_s,γ_N和k呈现复杂的变化趋势,而α则呈现逐渐减小的趋势.     

Synchronization properties and effects of parameter mismatches in unidirectionally coupled chaotic vertical-cavity surface-emitting lasers

We numerically investigate the effects of parameter mismatches on chaos synchronization in vertical-cavity surfaceemitting lasers (VCSELs). We assume injection-locked chaos synchronization in a unidirectionally coupled and openloop optical feedback system. The accuracy of chaos synchronization is greatly affected by the mismatches of the device parameters and operation conditions between the two lasers. In particular, the oscillation frequency of the laser is one of the important parameters in a system of injection-locked chaos synchronization. However, the variations of the device characteristics of VCSELs are very large compared with those of other types of semiconductor lasers. We study the effects of parameter mismatches related to the oscillation frequency of VCSELs on chaos synchronization. We proved that mismatches in terms of the birefringence and the injection current play crucial roles for the quality of chaos synchronization.