Epitaxial Growth and Thermoelectric Measurement of Bi2Te3/Sb Superlattice Nanowires

Superlattice nanowires are expected to show further enhanced thermoelectric performance compared with conventional nanowires or superlattice thin films. We report the epitaxial growth of high density Bi₂Te₃/Sb superlattice nanowire arrays with a very small bilayer thickness by pulse electrodeposition. Transmission electron microscopy, selected area electron diffraction and high resolution transmission electron microscopy were used to characterize the superlattice nanowires, and Harman technique was employed to measure the figure of merit (ZT) of the superlattice nanowire array in high vacuum condition. The superlattice nanowire arrays exhibit a ZT of 0.15 at 330 K, and a temperature difference of about 6.6 K can be realized across the nanowire arrays.     

Concerted Rattling in CsAg5Te3 Leading to Ultralow Thermal Conductivity and High Thermoelectric Performance

Thermoelectric (TE) materials convert heat energy directly into electricity, and introducing new materials with high conversion efficiency is a great challenge because of the rare combination of interdependent electrical and thermal transport properties required to be present in a single material. The TE efficiency is defined by the figure of merit ZT=(S²σ) T/κ, where S is the Seebeck coefficient, σ is the electrical conductivity, κ is the total thermal conductivity, and T is the absolute temperature. A new p‐type thermoelectric material, CsAg₅Te₃, is presented that exhibits ultralow lattice thermal conductivity (ca. 0.18 Wm^?1 K^?1) and a high figure of merit of about 1.5 at 727 K. The lattice thermal conductivity is the lowest among state‐of‐the‐art thermoelectrics; it is attributed to a previously unrecognized phonon scattering mechanism that involves the concerted rattling of a group of Ag ions that strongly raises the Grüneisen parameters of the material.     

Effects of silicon addition on thermoelectric properties of bulk Zn4Sb3 at low-temperatures

The thermoelectric properties of Si-doped compounds (Zn_1?xSi_x)₄Sb₃ (x = 0, 0.0025, 0.005, 0.01) have been studied. The results indicate that low-temperature (T < 300 K) thermal conductivity of moderately doped (Zn_0.9975Si_0.0025)₄Sb₃ reduces remarkably as compared with that of Zn₄Sb₃ due to enhanced impurity (dopant) scattering of phonons. Electrical resistivity and Seebeck coefficient are found to increase and then decrease moderately with the increase in the Si content. In addition, first-principles calculations are performed on the occupation options of Si atoms in disordered β-Zn₄Sb₃. The results indicate that Si atoms occupy preferentially the Zn vacancies in normal sites. Subsequently, Si atoms will substitute for interstitial Zn atoms. The lightly doped compound (Zn_0.9975Si_0.0025)₄Sb₃ exhibits the best thermoelectric performance due to the improvement in both its thermal conductivity and Seebeck coefficient. Its figure of merit, ZT, is about 1.3 times larger than that of pure Zn₄Sb₃ at 300 K.     

Structural,Magnetic and Thermoelectric Properties of hp-Mn3Ge5

Mn₃Ge₅ was obtained by high-pressure, high temperature synthesis. The compound adopts a Nowotny-Chimney-Ladder type crystal structure [tetragonal, space group P4 n2, a = 5.7449(1) Å, c = 13.9096(4) Å, Z = 4]. Magnetic measurements reveal a ferromagnetic transition around 40 K and metallic conductivity in the temperature range from 3 K to 350 K. Despite a low thermal conductivity, the metallic character of the sample and the low Seebeck coefficient result in low values for the thermoelectric Figure of merit, ZT. Band-structure calculations show that the Fermi level is located slightly below a pseudo-gap in the electronic density of states. Chemical bonding analysis in position space discloses moderate charge transfer and two- as well as three-atomic directed, heteroatomic bonding involving both the manganese and the germanium atoms.     

Highly Porous Thermoelectric Nanocomposites with Low Thermal Conductivity and High Figure of Merit from Large‐Scale Solution‐Synthesized Bi2Te2.5Se0.5 Hollow Nanostructures

To enhance the performance of thermoelectric materials and enable access to their widespread applications, it is beneficial yet challenging to synthesize hollow nanostructures in large quantities, with high porosity, low thermal conductivity (κ ) and excellent figure of merit (z T ). Herein we report a scalable (ca. 11.0 g per batch) and low‐temperature colloidal processing route for Bi₂Te_2.5Se_0.5 hollow nanostructures. They are sintered into porous, bulk nanocomposites (phi 10 mm×h 10 mm) with low κ (0.48 W m⁻¹ K⁻¹) and the highest z T (1.18) among state‐of‐the‐art Bi₂Te_3−x Se_x materilas. Additional benefits of the unprecedented low relative density (68–77 %) are the large demand reduction of raw materials and the improved portability. This method can be adopted to fabricate other porous phase‐transition and thermoelectric chalcogenide materials and will pave the way for the implementation of hollow nanostructures in other fields.     

Rapid One‐Step Synthesis and Compaction of High‐Performance n‐Type Mg3Sb2 Thermoelectrics

n‐type Mg₃Sb₂‐based compounds have emerged as a promising class of low‐cost thermoelectric materials due to their extraordinary performance at low and intermediate temperatures. However, so far, high thermoelectric performance has merely been reported in n‐type Mg₃Sb₂‐Mg₃Bi₂ alloys with a large amount of Bi. Moreover, current synthesis methods of n‐type Mg₃Sb₂ bulk thermoelectrics involve multi‐step processes that are time‐ and energy‐consuming. Herein, we report a fast and straightforward approach to fabricate n‐type Mg₃Sb₂ thermoelectrics using spark plasma sintering, which combines the synthesis and compaction in one step. Using this method, we achieve a high thermoelectric figure of merit zT of about 0.4–1.5 at 300–725 K in n‐type (Sc, Te)‐co‐doped Mg₃Sb₂ without alloying with Mg₃Bi₂. In comparison with the currently reported synthesis methods, the complexity, process time, and cost of our method are significantly reduced. This work demonstrates a simple, low‐cost route for the potential large‐scale production of n‐type Mg₃Sb₂ thermoelectrics.     

Thermoelectric Properties of Natural Chalcopyrite from Zacatecas,Mexico

The phase and chemical compositions of the mineral chalcopyrite from the sulfide footwall vein in La Cantera (Zacatecas, Mexico) is examined by powder X‐ray diffraction, energy dispersive X‐ray spectroscopy, and chemical ICP‐OES analyses. The influence of the detected impurities on the thermoelectric parameters (i.e. thermopower, electrical and thermal conductivities) is discussed. Thermoelectric figure of merit, ZT, of the studied natural minerals is found to be of the same order of magnitude (ca. 10^–3) as reported for CuFeS₂ synthesized in the laboratory.     

Few‐Layer Nanosheets of n‐Type SnSe2

Layered p‐block metal chalcogenides are renowned for thermoelectric energy conversion due to their low thermal conductivity caused by bonding asymmetry and anharmonicity. Recently, single crystalline layered SnSe has created sensation in thermoelectrics due to its ultralow thermal conductivity and high thermoelectric figure of merit. Tin diselenide (SnSe₂), an additional layered compound belonging to the Sn‐Se phase diagram, possesses a CdI₂‐type structure. However, synthesis of pure‐phase bulk SnSe₂ by a conventional solid‐state route is still remains challenging. A simple solution‐based low‐temperature synthesis is presented of ultrathin (3–5 nm) few layers (4–6 layers) nanosheets of Cl‐doped SnSe₂, which possess n‐type carrier concentration of 2×10¹⁸ cm^?3 with carrier mobility of about 30 cm² V^?1 s^?1 at room temperature. SnSe₂ has a band gap of about 1.6 eV and semiconducting electronic transport in the 300–630 K range. An ultralow thermal conductivity of about 0.67 Wm^?1 K^?1 was achieved at room temperature in a hot‐pressed dense pellet of Cl‐doped SnSe₂ nanosheets due to the anisotropic layered structure, which gives rise to effective phonon scattering.     

Soft Phonon Modes Leading to Ultralow Thermal Conductivity and High Thermoelectric Performance in AgCuTe

Crystalline solids with intrinsically low lattice thermal conductivity (κ_L) are crucial to realizing high‐performance thermoelectric (TE) materials. Herein, we show an ultralow κ_L of 0.35 Wm^?1 K^?1 in AgCuTe, which has a remarkable TE figure‐of‐merit, zT of 1.6 at 670 K when alloyed with 10 mol % Se. First‐principles DFT calculation reveals several soft phonon modes in its room‐temperature hexagonal phase, which are also evident from low‐temperature heat‐capacity measurement. These phonon modes, dominated by Ag vibrations, soften further with temperature giving a dynamic cation disorder and driving the superionic transition. Intrinsic factors cause an ultralow κ_L in the room‐temperature hexagonal phase, while the dynamic disorder of Ag/Cu cations leads to reduced phonon frequencies and mean free paths in the high‐temperature rocksalt phase. Despite the cation disorder at elevated temperatures, the crystalline conduits of the rigid anion sublattice give a high power factor.     

Thermoelectric properties of HPHT sintered In-doped Pb0.5Sn0.5Te

The thermoelectric properties of Pb_0.5Sn_0.5Te doped with In at 1.0, 2.0, and 3.0×10¹⁹/cm³ and sintered at a high pressure and high temperature (HPHT) of 4.0 GPa and 800 or 900 °C, respectively, have been studied. All samples show p-type semiconducting behavior with positive thermopower. We find that HPHT sintering of conventionally synthesized materials improves their thermoelectric properties. The highest power factor is obtained for In doping of 2.0×10¹⁹/cm³ with 13.5 μW/cm K² at 230 °C. The corresponding figure of merit is 1.43×10⁻³/K. This represents a twofold improvement in thermoelectric figure of merit, compared to the conventionally sintered materials reported in the literature. When exposed to 400 °C for 10 days, samples sintered at 900 °C exhibit more stable thermoelectric properties, while the properties of those sintered at 800 °C deteriorated. These results demonstrate that HPHT sintering is a viable and controllable way of tuning the thermoelectric properties of PbTe-based materials.     

Effects of Se doping on thermoelectric properties of Zn4Sb3 at low-temperatures

The thermoelectric properties of Se-doped compounds Zn₄(Sb_1?xSe_x)₃ (x = 0, 0.005, 0.01, 0.015) have been studied. The results indicate that low-temperature (T < 300 K) thermal conductivity of moderately doped Zn₄(Sb_0.99Se_0.01)₃ reduce remarkably as compared with that of Zn₄Sb₃ due to enhanced impurity (dopant) scattering of phonons. Electrical resistivity and Seebeck coefficient are found to increase and then decrease moderately with the increase in the Se content. Moreover, the lightly doped compound Zn₄(Sb_0.99Se_0.01)₃ exhibits the best thermoelectric performance due to the improvement in both its thermal conductivity and Seebeck coefficient. Its figure of merit, ZT, is about 1.3 times larger than that of pure Zn₄Sb₃ at 300 K.     

Single Cobalt Atoms with Precise N‐Coordination as Superior Oxygen Reduction Reaction Catalysts

A new strategy for achieving stable Co single atoms (SAs) on nitrogen‐doped porous carbon with high metal loading over 4 wt % is reported. The strategy is based on a pyrolysis process of predesigned bimetallic Zn/Co metal–organic frameworks, during which Co can be reduced by carbonization of the organic linker and Zn is selectively evaporated away at high temperatures above 800 °C. The spherical aberration correction electron microscopy and extended X‐ray absorption fine structure measurements both confirm the atomic dispersion of Co atoms stabilized by as‐generated N‐doped porous carbon. Surprisingly, the obtained Co‐N_x single sites exhibit superior ORR performance with a half‐wave potential (0.881 V) that is more positive than commercial Pt/C (0.811 V) and most reported non‐precious metal catalysts. Durability tests revealed that the Co single atoms exhibit outstanding chemical stability during electrocatalysis and thermal stability that resists sintering at 900 °C. Our findings open up a new routine for general and practical synthesis of a variety of materials bearing single atoms, which could facilitate new discoveries at the atomic scale in condensed materials.     

Structure, Stoichiometry, and Properties of the Chimney-Ladder Phases Ru2Ge3+x (0<x<1)

The preparation and physical characterization of non-stoichiometric Ru₂Ge_3+x (0≤x≤1) are reported for the first time. The defect TiSi₂-type chimney-ladder structure is maintained for the full stoichiometry range. The resistivity of Ru₂Ge_3+x increases systematically with x from 300 mΩ cm, x=0 -3 Ω cm, x=1 at 300 K. The temperature dependence is consistent with a variable range-hopping mechanism for x≥0.6. The Seebeck coefficients of samples do not evolve simply with x. A low thermal conductivity (κ_{300 K}=0.03 W/K cm) suggests that Ru₂Ge₃ has some of the properties of a phonon-glass-electron-crystal. The low value of the thermoelectric figure of merit ZT=3.2×10⁻³ (T=300 K) calculated for Ru₂Ge₃ is due primarily to a low conductivity.     

Thermoelectricity Generation and Electron–Magnon Scattering in a Natural Chalcopyrite Mineral from a Deep‐Sea Hydrothermal Vent

Current high‐performance thermoelectric materials require elaborate doping and synthesis procedures, particularly in regard to the artificial structure, and the underlying thermoelectric mechanisms are still poorly understood. Here, we report that a natural chalcopyrite mineral, Cu_1+xFe_1?xS₂, obtained from a deep‐sea hydrothermal vent can directly generate thermoelectricity. The resistivity displayed an excellent semiconducting character, and a large thermoelectric power and high power factor were found in the low x region. Notably, electron–magnon scattering and a large effective mass was detected in this region, thus suggesting that the strong coupling of doped carriers and antiferromagnetic spins resulted in the natural enhancement of thermoelectric properties during mineralization reactions. The present findings demonstrate the feasibility of thermoelectric energy generation and electron/hole carrier modulation with natural materials that are abundant in the Earth’s crust.     

Breaking the Tetra‐Coordinated Framework Rule: New Clathrate Ba8M24P28+δ (M=Cu/Zn)

A new clathrate type has been discovered in the Ba/Cu/Zn/P system. The crystal structure of the Ba₈M ₂₄P_28+δ (M =Cu/Zn) clathrate is composed of the pentagonal dodecahedra common to clathrates along with a unique 22‐vertex polyhedron with two hexagonal faces capped by additional partially occupied phosphorus sites. This is the first example of a clathrate compound where the framework atoms are not in tetrahedral or trigonal‐pyramidal coordination. In Ba₈M ₂₄P_28+δ a majority of the framework atoms are five‐ and six‐coordinated, a feature more common to electron‐rich intermetallics. The crystal structure of this new clathrate was determined by a combination of X‐ray and neutron diffraction and was confirmed with solid‐state ³¹P NMR spectroscopy. Based on chemical bonding analysis, the driving force for the formation of this new clathrate is the excess of electrons generated by a high concentration of Zn atoms in the framework. The rattling of guest atoms in the large cages results in a very low thermal conductivity, a unique feature of the clathrate family of compounds.     

Phase stability and chemical composition dependence of the thermoelectric properties of the type-I clathrate Ba8AlxSi46−x (8≤x≤15)

Phase stability of the type-I clathrate compound Ba₈Al_xSi_46−x and the thermoelectric property dependence on chemical composition are presented. Polycrystalline samples were prepared by argon arc melting and annealing. Results of powder X-ray diffraction and electron microprobe analysis show that the type-I structure is formed without framework deficiency for 8≤x≤15. Lattice constant a increases linearly with the increase of x. Thermoelectric properties were measured for x=12, 14 and 15. The Seebeck coefficients are negative, with the absolute values increasing with x. The highest figure of merit zT=0.24 was observed for x=15 at T=1000 K, with carrier electron density n=3×10²¹ cm⁻³. A theoretical calculation based on the single parabolic band model reveals the optimum carrier concentration to be n∼4×10²⁰ cm⁻³, where zT∼0.7 at T=1000 K is predicted.     

Transport and mechanical property evaluation of (AgSbTe)1−x(GeTe)x (x=0.80, 0.82, 0.85, 0.87, 0.90)

(AgSbTe₂)_1−x(GeTe)_x (known collectively by the acronym of their constituent elements as TAGS-x, where x designates the mole fraction of GeTe) materials, despite being described over 40 years ago, have only recently been studied in greater detail from a fundamental standpoint. We have prepared a series of samples with composition (AgSbTe₂)_1−x(GeTe)_x (x=0.80, 0.82, 0.85, 0.87 and 0.90). Cast ingots of the above compositions were ground and consolidated by spark plasma sintering (SPS). Sintering conditions, specifically high applied pressures of 65 MPa and slow heating rates, were identified as important variables that lead to samples with low porosity and good mechanical strength. The resulting ingots were cut for high temperature electrical, thermal transport and mechanical property evaluation. TAGS-85 was found to have the highest ZT of all samples investigated (ZT=1.36 at 700 K) as a result of its very low value of thermal conductivity. Hall effect measurements performed from 5 to 300 K found these materials to have complex multi-band transport characteristics.     

Achieving High‐Temperature Stability of Metastable α‐MoC1‐x by Suppressing Phase Transformation with Mounted Atoms for Lithium Storage Performance

Despite a significant advancement in preparing metastable materials, one common problem is the strict and precious reaction conditions due to their metastable structures. Herein, we achieved the preparation of high‐temperature stabilized metastable α‐MoC_1?x by mounting zinc atoms into its lattice structure. Such a structural construction could suppress the phase transformation from α‐MoC_1?x to β‐Mo₂C through restricting the displacement of Mo atoms upon increased temperature. The resultant metastable α‐MoC_1?x can be stabilized up to 1000 °C and this stability temperature is the highest for the metastable α‐MoC_1?x so far. Synchrotron X‐ray absorption spectroscopy (XAS) and X‐ray photoelectron spectroscopy (XPS) confirm the structure of Zn‐mounted α‐MoC_1?x. Density functional theory (DFT) calculations reveal that the introduction of the Zn atoms in the lattice structure of α‐MoC_1?x could significantly decrease the energy difference (ΔE) between α‐MoC_1?x and β‐Mo₂C, thus effectively suppressing the phase transformation from α‐MoC_1?x to β‐Mo₂C and accordingly maintaining the high‐temperature stability of α‐MoC_1?x. This novel strategy can be used as a universal method to be extended to synthesize metastable α‐MoC_1?x from different precursors or other mounted elements. Moreover, the optimal product exhibits excellent lithium storage performances in terms of the cycling stability and rate performance.     

Potential of Chevrel phases for thermoelectric applications

A low lattice thermal conductivity is one of the requirements to achieve high thermoelectric figures of merit. Several low thermal conductivity materials were identified and developed over the past few years at the Jet Propulsion Laboratory (JPL), including filled skutterudites and Zn₄Sb₃-based materials. A study of the mechanisms responsible for the high phonon scattering rates in these compounds has demonstrated that materials with structures that can accommodate additional atoms in their lattice are likely to possess low lattice thermal conductivity values. Chevrel phases (Mo₆Se₈-type) are just such materials and are currently being investigated at JPL for thermoelectric applications. The crystal structures of the Chevrel phases present cavities which can greatly vary in size and can contain a large variety of atoms ranging from large ones such as Pb to small ones such as Cu. In these materials, small inserted atoms usually show large thermal parameters which indicate that they move around and can significantly scatter the phonons. The electronic and thermal properties of these materials can potentially be controlled by a careful selection of the filling element(s). We have synthesized (Cu, Cu/Fe, Ti)_xMo₆Se₈ samples and report in this paper on their thermoelectric properties. Approaches to optimize the properties of these materials for thermoelectric applications are discussed. Solid State Sciences, 1293-2558/99/7-8/© 1999 Éditions scientifiques et médicales Elsevier SAS. All rights reserved.     

Semiconducting Clathrates Meet Gas Hydrates: Xe24[Sn136]

Semiconducting Group 14 clathrates are inorganic host–guest materials with a close structural relationship to gas hydrates. Here we utilize this inherent structural relationship to derive a new class of porous semiconductor materials: noble gas filled Group 14 clathrates (Ng_x[M₁₃₆], Ng=Ar, Kr, Xe and M=Si, Ge, Sn). We have carried out high‐level quantum chemical studies using periodic Local‐MP2 (LMP2) and dispersion‐corrected density functional methods (DFT‐B3LYP‐D3) to properly describe the dispersive host–guest interactions. The adsorption of noble gas atoms within clathrate‐II framework turned out to be energetically clearly favorable for several host–guest systems. For the energetically most favorable noble gas filled clathrate, Xe₂₄[Sn₁₃₆], the adsorption energy is ?52 kJ mol^?1 per guest atom at the LMP2/TZVPP level of theory, corresponding to ?9.2 kJ mol^?1 per framework Sn atom. Considering that a hypothetical guest‐free Sn clathrate‐II host framework is only 2.6 kJ mol^?1 per Sn atom less stable than diamond‐like α‐Sn, the stabilization resulting from the noble gas adsorption is very significant.