Design of a spectrum-expanded polymer Mach�CZehnder interferometer electro-optic switch using two-phase generating couplers

A novel structure, thorough analysis and design technique are presented for a kind of polymer Mach?CZehnder Interferometer (MZI) electro-optic (EO) switch consisting of two-phase generating couplers (PGCs). By optimizing the PGCs structure, the output spectrum of the two PGCs based MZI EO switch is greatly expanded to almost six times of that of the traditional MZI EO switch with two 3?dB directional couplers. Under a central wavelength of 1550 nm, the driving voltages of the designed switch are as low as about 0 (ON state) and ±0.925?V (OFF state) with an EO region length of 5000???m. A wide spectrum more than 350 nm (1380??1730?nm) is achieved, and within this wavelength range, the crosstalk is less than ?30?dB, and the insertion loss is less than 5.91?dB which is larger than that of the traditional MZI EO switch due to the longer waveguide length by introducing two PGCs. The design technique on the two PGCs based MZI EO switch is supported to be reasonable compared with the beam propagation method (BPM). The proposed structure shows potential wide applications especially in optical cross-connect (OXC) and optical add-drop multiplexing (OADM) systems.     

基于多模干涉耦合器的集成热光开关实验研究

报道了一种基于多模干涉(MMI)耦合器的马赫曾德尔干涉仪(MZI)型2×2集成热光开关的实验研究结果,插损为3.40 dB,偏振相关损耗为0.47 dB,直通和交叉状态消光比分别为32.01 dB和16.42 dB,响应时间小于3 ms,开关功耗为658 mW。针对直通和交叉状态消光比不对称的现象,从理论上做出了解释,因为半导体平面光波电路(PLC)工艺一致性较好,两个多模干涉耦合器的分光比虽然因工艺误差偏离50∶50,但误差量相近,这个特点对光开关直通和交叉状态的消光比产生了不同影响。分析了在波导上制作加热电极对波导有效折射率的影响,估算其增量在2×10-4量级。     

Er-Yb co-doped glass waveguide amplifiers using ion exchange and field-assisted annealing

Er³⁺-Yb³⁺ co-doped waveguide amplifiers fabricated using thermal two-step ion-exchange are demonstrated. K⁺-Na⁺ ion-exchange process was first carried out in pure KNO₃ molten bath, and then field-assisted annealing (FAA) was used to make the buried waveguides. The effective buried depth is estimated to be ∼3.4 μm for the buried FAA waveguides. With the use of cut-back method, the fiber-to-guide coupling loss of ∼4.38 dB, the waveguide loss of ∼2.27 dB/cm, and Er³⁺ absorption loss ∼5.7 dB were measured for a ∼1.24-cm-long waveguide. Peak relative gain of ∼7.0 dB is obtained for a ∼1.24-cm-long waveguide. The potential for the fabrication of compact optical amplifiers operating in the range of 1520-1580 nm is also demonstrated.     

High-performance SOA-based multiwavelength fiber lasers incorporating a novel double-pass waveguide-based MZI

In this paper, using a direct double-pass and a novel isolator-assisted double-pass waveguide-based Mach-Zehnder interferometer (MZI), high-performance SOA-based multiwavelength fiber lasers (MFL) are proposed and demonstrated experimentally. The filtering characteristics of the proposed isolator-assisted double-pass MZI are analyzed and examined theoretically in comparison with those of the single-pass and direct double-pass MZI. Using a direct double-pass waveguide-based MZI with the single-pass free spectral range (FSR) of 43 GHz, up to 115- and 104-channel simultaneous oscillations spaced at 21.5 GHz in the L-band and C-band are obtained, respectively, with a power non-uniformity of less than 3 dB and an extinction ratio of ∼30 dB. To the best of our knowledge, it is the highest lasing-channel count that has been achieved from an SOA-based MFL. To enhance the extinction ratio while maintaining the FSR, the proposed isolator-assisted double-pass MZI is then utilized in the laser cavity, and a stable 55-wavelength simultaneous oscillation spaced at 43 GHz is accordingly achieved in C-band with an extinction ratio of higher than 50 dB. Compared with the lasing linewidth of 0.058 nm with the conventional single-pass MZI, narrower linewidths of 0.038 and 0.028 nm are obtained with the isolator-assisted and direct double-pass MZI configurations, respectively. The lasers are stable with a maximum power fluctuation per channel of less than 0.8 dB during an hour’s test.     

Low-loss, compact waveguiding with TE mode in metal/dielectric waveguides for planar lightwave circuit

We propose a low-loss metal/dielectric waveguide for compact planar lightwave circuit. The basic waveguide structure is a metal-defined high-index-contrast strip waveguide based on silicon/silica. As the guide is designed for TE single mode waveguiding, extremely low propagation loss (e.g. <0.04 dB/cm), very low bend loss (e.g. 0.0043 dB/90°-turn) and small waveguide pitch of zero-crosstalk are theoretically achievable, and can be further improved by compromising with component size and density. Examples of multi-bends and device integration are demonstrated with numerical simulations. The proposal is compatible with silicon technology and appealing for development of silicon-based planar lightwave circuit.     

Four-wavelength DBR laser array with waveguide couplers fabricated using selective MOVPE growth

We have developed an integrated multiwavelength laser with waveguide couplers using a novel selective metal-organic vapor-phase epitaxy (MOVPE) technique. The lasing wavelength was controlled by modulating the effective refractive index of distributed Bragg reflector (DBR) waveguides. Array lasing wavelengths were distributed from 1548.0 to 1553.5 nm with an average spacing of 1.8 nm. The propagation loss of the waveguide coupler was about 16 dB for inner ports and 20 dB for outer ports with a 6 dB splitting loss. Four-wavelength laser outputs were coupled into a single-mode fibre.     

Integrated waveguide splitter fabricated by Cs-Na ion-exchange

This paper reports a optical power splitter fabricated by Cs⁺-Na⁺ ion-exchange in KF3 glass. The propagation loss of the waveguide is about 0.25 dB/cm derived from measured contrast ratio and 3 dB bandwidth.     

Fabrication of Triplexers Based on Flattop SOI AWG

A triplexer is fabricated based on SOI arrayed waveguide gratings （AWGs）. Three wavelengths of the triplexer operate at different diffraction orders of an arrayed waveguide grating. The signals of 1490nm and 1550nm, which are input from central input waveguide of an AWG, are demultiplexed and the signal of 131Onto, which is input from central output waveguide of an AWG, is uploaded. The tested results show that the downloaded and uploaded signals have fiat-top response. The insertion loss is 9 dB on chip, the nonadjacent crosstalk is less than -30 dB for 1490nm and 1301 nm, and is less than -25 dB for 1550nm, the 3dB bandwidth equates that of the input light source.     

Probability density function of noise statistics for optically pre-amplified DPSK receivers with optical Mach-Zehnder interferometer demodulation

We present explicitly semi-analytical probability density functions (pdf’s) of noise statistics in DPSK receivers with Mach-Zehnder interferometer (MZI) demodulation with considering the phase noise for the first time. Error performance of DPSK receivers with MZI demodulation is evaluated by using the calculated pdf’s. It is found that DPSK receivers with MZI demodulation and balanced detection are less sensitive to phase noise impact than those with the single-port detection to some extent. Moreover, it is found that ASE-ASE beat noise induced pdf difference in balanced detection compared to single-port detection may result in ∼3 dB improvement in receiver sensitivity mainly depending on optical filtering, ASE-amplified spontaneous emission. Therefore, the measured receiver sensitivity improvement by using balanced detection consist of the improvements due to signal energy difference and ASE-ASE beat noise induced pdf difference compared to single-port detection.     

A photonic wire-based directional coupler based on SOI

A photonic wire-based directional coupler based on SOI was fabricated by e-beam lithography (EBL) and the inductively coupled plasma (ICP) etching method. The size of the sub-micron waveguide is 0.34 μm × 0.34 μm, and the length in the coupling region and the separation between the two parallel waveguides are 410 and 0.8 μm, respectively. The measurement results are in good agreement with the results simulated by 3D finite-difference time-domain method. The transmission power from two output ports changed reciprocally with about 23 nm wavelength spacing between the coupled and direct ports. The extinction ratio of the device was between 5 and 10 dB, and the insertion loss of the device in the wavelength range 1520-1610 nm was between 22 and 24 dB, which included an about 18.4 ± 0.4 dB coupling loss between the taper fibers and the polished sides of the device.     

Improvement of polarization extinction in silicon waveguide devices

The SOI based waveguide devices are found to be highly polarization sensitive. Unwanted polarization excitations can be attenuated by integrating a TE- or TM-pass polarizer. A large attenuation of TM-polarized light has been observed when a thin film of metal is coated on the top of silicon rib waveguide, while TE-polarized light remains almost unaffected. The attenuation of TM-polarized light is attributed to the plasmonic absorption of the evanescent field in the metal cladding. Typically, with an Al cladding of thickness ～ 100 nm and a length of 1 mm on top of a single-mode (λ ～ 1550 nm) SOI rib waveguide structure, TE vs TM extinction ratio of ～ 15 dB has been obtained. Integrating such waveguide polarizers in a directional coupler and MZI based DWDM channel interleaver, we have also achieved an improvement in polarization extinction by ～ 15 dB.     

Femtosecond pulse generation using stimulated Raman scattering in integrated silicon optical waveguide device

To generate ultrafast femtosecond optical pulses, we propose a model of an integrated device consisting of a Mach-Zehnder interferometer (MZI) with two symmetric 3 dB directional couplers and a straight waveguide based on the single-mode silicon-on-insulator (SOI) optical waveguide. The principle of pulse generation in the presented device is based on the strong stimulated Raman scattering (SRS) in silicon; the center wavelength of the pulse generated is tunable by changing the center wavelength of the co-propagating pump pulse. Numerical results show that, when a continuous wave (CW) with a weak power at 1670 nm wavelength and a pump pulse with a high peak power at 1550 nm wavelength are co-propagating, a narrow femtosecond pulse with a pulse width (full width at half maximum, FWHM) of ∼60 fs (FWHM of the pump pulse is 166.5 fs) can be achieved in the device proposed. In addition, when the waveguide length, pump peak power, and pump-pulse width are fixed, the properties of generated femtosecond pulse depend strongly on the incident chirp of the pump pulse and the CW power.     

A wide-band polymeric electro-optic modulator array based on unidirectional coupling between multi-mode waveguide array and a vertical configured dumping planar waveguide

A polymeric wide-band electro-optic (EO) modulator array based on unidirectional mode-coupling between the guiding multi-mode waveguide array and a vertical configured planar dumping waveguide was developed. A low insertion loss of <1.7 dB was obtained due to asymmetrically designed guiding waveguide and the dumping waveguide. A modulation depth of 91% was achieved with the device length of 3.5 cm at a low driving voltage of 3.2 V. The employment of the dumping planar waveguide not only provides an efficient way to achieve the unidirectional coupling mechanism, but also effectively confines the light coupled from the guiding waveguides within the planar dumping waveguide. The combination of unidirectional coupling and light confinement effects ensures low cross talk of <22 dB between adjacent guiding waveguides. Since the proposed modulator is based on the unidirectional coupling mechanism, it is intrinsically wide-band. A wide-band operation from 1308 to 1324 nm was experimentally obtained. The unidirectional mode-coupling-based wide-band modulation principle can be readily applied to other wavelengths, such as 1330 and 1550 nm ranges.     

Analysis and optimization of an InGaAsP/InP waveguide variable optical attenuator

An InGaAsP/InP waveguide variable optical attenuator (VOA) is proposed in this paper. The device consists of straight input and output waveguides and an S-bend waveguide. An electrode is deposited on a portion of the waveguide to form an active region so that its refractive index can be modified by a current injection, resulting in the variation of the transmitted optical power. The beam propagation method is employed in the numerical simulation and the device structure is optimized using a genetic algorithm. The optimized VOA has a low excess loss (<1 dB) and a large dynamic range of about 40 dB.     

Photonic crystal optical switch using a new slow light waveguide and heterostructure Y-junctions

In this paper we propose a photonic crystal Mach-Zehnder interferometer (MZI) based on a new coupled-cavity waveguide, where its advantage over the previous type of photonic crystal coupled-cavity waveguide is discussed. A heterostructure Y-junction is comprised of square and hexagonal lattices of the new coupled-cavity waveguide. It is designed by applying the temporal coupled-mode theory and is optimized, where an overall throughput efficiency of more than 90% is achieved at the wavelength of 1.55 μm. The design of the Y-junction is performed using finite-difference time-domain method. The designed heterostructure Y-junction is used in the structure of a MZI, where its arms are approximately as short as 24 μm. Finally, the transient response of the proposed optical switch is investigated.     

Loss reduction in silicon nanophotonic waveguide micro-bends through etch profile improvement

Single mode silicon photonic wire waveguides allow low-loss sharp micro-bends, which enables compact photonic devices and circuits. The circuit compactness is achieved at the cost of loss induced by micro-bends, which can seriously affect the device performance. The bend loss strongly depends on the bend radius, polarization, waveguide dimension and profile. In this paper, we present the effect of waveguide profile on the bend loss. We present waveguide profile improvement with optimized etch chemistry and the role of etch chemistry in adapting the etch profile of silicon is investigated. We experimentally demonstrate that by making the waveguide sidewalls vertical, the bend loss can be reduced up to 25% without affecting the propagation loss of the photonic wires. The bend loss of a 2 μm bend has been reduced from 0.039dB/90° bend to 0.028dB/90° bend by changing the sidewall angle from 81° to 90°, respectively. The propagation loss of 2.7 ± 0.1dB/cm and 3 ± 0.09dB/cm was observed for sloped and vertical photonic wires respectively was obtained.     

Fabrication of single-mode ridge SU-8 waveguides based on inductively coupled plasma etching

In this paper, a systematic study has been performed for the etching of negative photoresist SU-8 2005 using inductively coupled plasma. The etching rate, vertical profile, surface and sidewall roughness of the waveguide were investigated as a function of the chamber pressure, the bias power, the antenna power, the ratio of flow rate of Ar to O₂, and the etching time. The etching parameters were studied in detail and optimized to minimize the surface roughness in etched areas. Ridge MZI waveguides with SU-8 2005 were fabricated under the optimized etching conditions, resulting in smooth and almost vertical patterns. The waveguides showed single-mode propagation at 1550 nm wavelength and low propagation loss of less than 1.565 dB/cm, which was similar to the waveguides fabricated by the wet-etching technique.     

Hybrid Mach-Zehnder interferometer and knot resonator based on silica microfibers

We propose and demonstrate an all-fiber high Q Mach-Zehnder interferometer (MZI)-coupled microknot resonator (MZKR) structure using optical microfibers drawn from silica fibers. The experimental results show that this microfiber-based structure achieved a high Q factor of ∼ 15,000 and good interference fringes with extinction ratio of up to ∼ 15 dB. By optimizing the loop-length of the microfiber knot and the optical path-difference of the MZI, the desired MZKR with higher Q factor and better extinction ratio could be obtained. A series of integrated all-fiber optical devices could be realized based on such a MZKR structure due to its outstanding advantages of easy fabrication, great flexibility, low cost, low loss, etc.     

An integrated Mach–Zehnder interferometric biosensor with a silicon oxynitride waveguide by plasma-enhanced chemical vapor deposition

We report the design and fabrication of an integrated Mach–Zehnder interferometric (MZI) biochip based on silicon oxynitride layers deposited with a plasma-enhanced chemical vapor deposition (PECVD) process. A rib waveguide for an integrated MZI sensor has been designed to have a high surface sensitivity and a single-mode behavior by using an effective index method. The integrated MZI chip operating at 637 nm is fabricated via conventional photolithography and reactive ion etching. As a biosensor application, the real-time and label-free detection of the covalent immobilization and hybridization of DNA strands is performed and verified with this device.     

Optical path design and evaluation in Tm doped glass channel waveguide for S-band amplification

To achieve high-gain S-band waveguide amplifiers and promote the practicality of integrated signal amplification devices, bent waveguide structures based on Tm³⁺ doped germanate glass substrate have been designed. Using simulated-bend method, the optimal radius for the curved structure is offered to be 1.90 cm with a loss coefficient of 0.04 dB/cm, as the substrate size is minimally schemed. For the folded-spiral waveguide, the internal gain at 1482 nm is derived to be 13.01 dB, which is higher than the values of 8.21 and 4.22 dB in the U- and S-bend waveguides, respectively, and nearly three times higher than that of the straight one. Simulation results indicate that the optical path design is attractive in realizing the high gain of Tm³⁺ doped germanate glass channel waveguides for practical S-band amplification.