High-efficiency Simple Structure White Organic Light-emitting Devices Based on Rubrene Ultrathin Layer

White organic light-emitting devices (WOLEDs) were fabricated with an ultrathin layer of rubrene inserted between NPB and TPBI. With a simple three-layer structure of ITO/NPB(50 nm)/rubrene(0.1 nm)/TPBI(50 nm)/LiF/Al, a white light with CIE coordinates of (0.31, 0.30) were generated. The device gave a maximum luminance efficiency of 2.04 lm/W at 5 V. Furthermore, with a multilayer structure of ITO/m-MTDATA(30 nm)/NPB(20 nm)/rubrene(0.1 nm)/TPBI(40 nm)/Alq₃(10 nm)/LiF/Al, the device reached a maximum luminance efficiency of 4.29 lm/W at 4 V and the luminance could exceed 10 000 cd/m² at 10 V.     

Chromaticity-tunable white light emission from organic multiple-quantum-well structure

Organic multiple quantum wells (MQWs) white light emitting devices are fabricated in which blue fluorescent dye, a trimer of N-anylbenzimidazole (TPBI) and orange fluorescent rubrene doped tris (8-hydroxyquinoline) Aluminum act as quantum-well light emitting layers between triphenyldiamine derivative (TPD) potential barrier layers, and aluminium complex (Alq) act as an electron transporter and green emitter. The injected carriers are confined in different quantum wells and Alq layer. The white light emission comes from a combination of photons generated in different light emitting layers. The Commission Internationale de l' Eclairage (CIE) coordinates of the emitted light are tuned by increasing the number of TPBI wells due to its low fluorescent efficiency compared with rubrene.     

新型TPBI/Ag阴极结构的红色有机发光二极管

采用可溶液加工的小分子红光材料2为发光层（EML）,制备了不同阴极结构的系列电致发光器件.结果表明,空穴阻挡层（HBL）TPBI的引入能有效降低高功函数（Al, Ag, Au）金属阴极的电子注入势垒,显著改善器件发光效率,与传统阴极结构（Ba/Al）比较,采用TPBI/Ag阴极结构的器件外量子效率提高了57%,主要原因是TPBI/Ag阴极界面形成较低的电子注入势垒,有利于电子注入,使器件发光效率明显提高. 关键词： 电致发光 电子注入 阻挡层 高功函数金属阴极     

间隔层对红绿磷光有机电致发光器件发光性能的影响

制备了结构为ITO/MoO₃(40 nm)/NPB(40 nm)/TCTA(10 nm)/CBP∶GIr1(14%)∶R-4B(2%)(20 nm) /间隔层(3 nm)/ CBP∶GIr1(14%)∶R-4B(2%)(10 nm)/BCP(10 nm)/Alq₃(40 nm)/LiF(1 nm)/Al(100 nm) 的有机电致发光器件,间隔层分别为CBP,TCTA,TPBI和BCP,GIr1和R-4B分别为绿红磷光材料。通过加入不同间隔层来调控载流子和激子在发光层内的分布并研究了其对器件发光性能的影响。研究表明TCTA,TPBI和BCP分别作为间隔层的器件较CBP为间隔层的参考器件,电压为6 V时,电流效率分别高出59%,79%和93%,以BCP为间隔层的器件效率最高达到22.58 cd·A-1;TPBI和BCP为间隔层相对于以TCTA为间隔层的器件,在较高的电流密度下,效率滚降更小。分析原因TCTA间隔层较高的LUMO能级和三线态能量将电子和激子限制在较窄的复合区域,提高了载流子相遇形成激子的概率,在较高电流密度下猝灭也更严重;TPBI和BCP由于具有较高的HOMO能级和电子传输能力,拓宽了激子的复合区域。间隔层引起电子或空穴的累积,形成较高的空间电场,有利于发光层相应载流子的注入与传输。由于发光层掺杂方式为红绿共掺,器件均获得了较好的色坐标稳定性。     

电子主体材料对蓝光OLED的影响

基于ITO/MoO₃/NPB/TCTA/FIrpic：TCTA/FIrpic：X/Y/LiF/Al结构,研究了主体材料的能级和三线态激子,以及电子传输材料的能级对器件性能的影响。研究发现,X与Y分别为TmPyPb与TPBI的双发光层蓝光器件的性能最优,最大发光效率达到了23.78 cd/A。研究表明,电子主体材料可以调节激子分布,影响能量转移。     

Photoluminescence and electroluminescence of a novel green-yellow emitting material-5,6-Bis-[4-(naphthalene-1-yl-phenyl-amino)-phenyl]-pyrazine-2,3-dicarbonitrile

A new compound with intramolecular charge transfer (ICT) property—5,6-Bis-[4-(naphthalene-1-yl-phenyl-amino)-phenyl]-pyrazine-2,3-dicarbonitrile(BNPPDC) was synthesized. The new compound was strongly fluorescent in non-polar and moderately polar solvents, as well as in thin solid film. The absorption and emission maxima shifted to longer wavelength with increasing solvent polarity. The fluorescence quantum yield also increased with increasing solvent polarity from non-polar to moderately polar solvents, then decreased with further increase of solvent polarity. This indicates both “positive” and “negative” solvatokinetic effects co-existed. Using this material as hole-transporting emitter and host emitter, we fabricated two electroluminescent (EL) devices with structures of A (ITO/BNPPDC (45 nm)/1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBI) (45 nm)/Mg:Ag (200 nm) and B (ITO/N,N′-diphenyl-N,N′-bis-(3-methylphenyl) (1,1′-diphenyl)4,4′-diamine (TPD) (50 nm)/BNPPDC (20 nm)/1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBI) (45 nm)/Mg:Ag (200 nm). The devices showed green-yellow EL emission with good efficiency and high brightness. For example, the device A exhibited a high brightness of 17400 cd/m² at a driving voltage of 11 V and a very low turn-on voltage (2.9 V), as well as a maximum luminous efficiency 3.61 cd/A. The device B showed a similar performance with a high brightness of 12650 cd/m² at a driving voltage of 13 V and a maximum luminous efficiency 3.62 cd/A. In addition, the EL devices using BNPPDC as a host and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as a dopant (configuration: ITO/TPD (60 nm)/BNPPDC:DCJTB (2%) (30 nm)/TPBI (35 nm)/Mg:Ag (200 nm)) showed a good performance with a brightness of 150 cd/m² at 4.5 V, a maximum brightness of 12600 cd/m² at 11.5 V, and a maximum luminous efficiency of 3.30 cd/A.     

1.53 μm electroluminescence from ErF3-doped organic light-emitting diodes

Near-infrared (NIR) organic light-emitting devices (OLEDs) are demonstrated by employing erbium fluoride (ErF₃)-doped tris-(8-hydroxyquinoline) aluminum (Alq₃) as the emitting layer. The device structure is ITO/N,N′-di-1-naphthyl-N,N′-diphenylbenzidine (NPB)/Alq₃: ErF₃/2,2′,2″-(1,3,5-phenylene)tris(1-phenyl-1H-benzimidazole) (TPBI)/Alq₃/Al. Room-temperature electroluminescence around 1530 nm is observed due to the ⁴I_13/2–⁴I_15/2 transition of Er³⁺. Full width at half maximum (FWHM) of the electroluminescent (EL) spectrum is ～50 nm. NIR EL intensity from the ErF₃-based device is ～4 times higher than that of Er(DBM)₃Phen-based device at the same current. Alq₃–ErF₃ composite films are investigated by the measurements of X-ray diffraction (XRD), absorption, photoluminescence (PL) and PL decay time. Electron-only devices are also fabricated. The results indicate that energy transfer mechanism and charge trapping mechanism coexist in the NIR EL process.     

有机/无机复合双层电子传输层的量子点发光二极管

采用有机/无机复合双层电子传输层（ETL）研制绿色QLEDs,其中有机ETL采用OLED中常见的ETL材料,无机ETL采用ZnO纳米颗粒,并通过调控有机ETL厚度改变电子注入,使电子/空穴达到平衡。制备的器件结构为:ITO/PEDOT:PSS/TFB/QDs/ZnO NPs/TPBI:Liq/Al,其中有机电子传输层TPBI:Liq采用真空蒸镀沉积。与仅采用ZnO电子传输层的器件相比,可以使器件性能得到大幅提升:器件的最大电流效率从11.53 cd/A提升到22.77 cd/A,同时器件的启亮电压、电致发光光谱无明显变化。判断有机ETL的主要作用是抑制了过量电子的注入和传输,在发光亮度变化不大的情况下,降低了器件的无效复合（例如俄歇复合）电流,从而使电流效率明显提升。     

以BAlq为主体的高效高色纯度的红色有机电致磷光器件

以铱配合物红色磷光体Ir(piq)₂(acac)为掺杂剂,制备了基于BAlq材料的红色电致磷光器件,其结构为ITO/NPB(30nm)/Ir(piq)₂(acac):BAlq(25nm)/BCP(13nm)/Alq₃(35nm)/LiF(1nm)/Al(1000nm),当掺杂浓度为8%的时候,器件发光的色坐标为(x=0.67,y=0.32),基本满足了全色显示对红色发光的要求。在电压为16V时,器件达到最高亮度9380cd/m²。在电流密度为5.45mA/cm²时,外量子效率达到最大5.7%。由于磷光体Ir(piq)₂(acac)的磷光寿命较短,所以器件在高电流密度下,仍然保持较高的外量子效率。电流密度为100mA/cm²时,外量子效率仍然维持在4.7%。进一步研究表明在器件中短程的Dexter能量传递以及红光染料对空穴的直接捕获两种机制同时存在。     

A terbium (III) complex with triphenylamine-functionalized ligand for organic electroluminescent device

A novel ligand, 4-diphenylamino-benzoic acid (HDPAB), and the corresponding Tb (III) complex, Tb (DPAB)₃ which can be dissolved easily in organic solvents were synthesized and characterized. Organic electroluminescent (EL) device with a structure of indium tin oxide (ITO)/poly(N-vinylcarbazole) (PVK): Tb (DPAB)₃ (50 wt%, 80 nm)/1,3,5-tris-(N-phenylbenzimidazol-2-yl)benzene (TPBI) (30 nm)/tri(8-hydroxyquinoline)aluminum (AlQ) (20 nm)/LiF (1 nm)/Al (150 nm) in which Tb (DPAB)₃ acted as an emitter were fabricated. The maximum luminance of 230 cd m⁻² at 20 V and the maximum efficiency of 0.62 cd A⁻¹ were obtained due to the introduction of hole-transporting group, representing the best result to date among Tb (III) carboxylate complexes based EL devices. These results indicate that modifications of rare earth complexes are a promising way to improve the properties of EL devices.     

The low-frequency electrical noise as reliability estimation for high power semiconductor lasers

The low-frequency electrical noise of 980 nm InGaAsP/InGaAs/GaAlAs double quantum well (DQW) high power semiconductor lasers (LDs) is measured when the devices are in conducting state and in unconducting state. The correlation between the noise and device reliability is discussed. The results indicate that there is a good relation between the noise and device reliability for most devices. The devices with higher noise are usually unreliable whether the device is in conducting state or in unconducting state.     

MEH-PPV/PEG聚合物电双稳器件的研究

将PEG(聚乙二醇)引入到ITO/MEH-PPV(聚(2-甲氧基,5(2'-乙基己氧基)-1,4-苯撑乙烯撑)/Al三明治器件中,实现了很好的电双稳性能。通过改变PEG的分子量、浓度以及退火温度等条件,对器件性能进行了优化。通过电流-电压(I-V)测试研究了不同器件的性能,结果表明,分子量为4 000的PEG,在30 mg/mL的浓度下,通过120℃退火制备的薄膜,其器件性能最优,电流开关比可以达到10~3以上。利用SEM测试研究了活性层的膜形貌,并结合电流-电压(I-V)曲线的线性拟合,分析了电荷在器件中的传输过程。研究发现,相分离产生的陷阱对电荷的俘获是该器件产生电双稳特性的主要原因。     

Synthesis and electroluminescent properties of a carbozole-functionalized europium(III) complex

A novel europium(III) complex, tris(dibenzoylmethanate){1-[9-hexyl-9H-carbazole]-2-(2-pyridyl)-benzimidazole}europium(III) [Eu(DBM)₃(CAR-PyBM)] functionalized by a carbozole fragment, was synthesized and used as emitting material in organic electroluminescent (EL) devices. Compared with the device based on an unfunctional Eu(III) complex, [Eu(DBM)₃HPyBM] (HPyBM=2-(2-pyridyl)benzimidazole), the EL performances of the device using [Eu(DBM)₃(CAR-PyBM)] as an emitter was significantly enhanced due to the improvement of hole-transporting ability. The maximum efficiency and luminance of red emission achieved from the device with the configuration of ITO/N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′diamine (TPD, 50 nm)/ [Eu(DBM)₃(CAR-PyBM)] (30 nm)/1,3,5-tirs-(N-phenylbenzimidazol-2-yl)benzene (TPBI, 20 nm)/LiF (1.5 nm)/Al were 4.2 cd/A and 200 cd/m², respectively.     

Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

Ag/ZnO/Pt structure resistive switching devices are fabricated by radio frequency (RF) magnetron sputtering at room temperature. The memory devices exhibit stable and reversible resistive switching behavior. The ratio of high resistance state to low resistance state can reach as high as 10 2 . The retention measurement indicates that the memory property of these devices can be maintained for a long time (over 10 4 s under 0.1-V durable stress). Moreover, the operation voltages are very low, -0.4 V (OFF state) and 0.8 V (ON state). A high-voltage forming process is not required in the initial state, and multi-step reset process is demonstrated. Resistive switching device with the Ag/ZnO/ITO structure is constructed for comparison with the Ag/ZnO/Pt device.     

Is quantum computing with solid state devices possible?

Experiments with a few qubits, the basic elements of a quantum computer, using the methods of nuclear magnetic resonance (NMR) have demonstrated that quantum computing is possible. A useful quantum computer would need to use many qubits, while it appears that NMR with molecules is limited to about ten qubits. The easiest way to assemble a large number of qubits would be to use the existing solid state technology. However, the accuracy with which large numbers of solid state devices can be fabricated does not match the high-precision methods that have made quantum computing with magnetic resonance possible. Quantum computing with solid state devices must expect to encounter a new set of problems posed by differences between nominally identical devices. The difficulties are illustrated with examples of proposed qubits. Specific questions that must be addressed in attempts to use solid state devices for quantum computing are suggested. Received: 25 July 2002 / Accepted: 31 July 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +1-914/945-2141, E-mail: rkeyes@us.ibm.com     

基于有机薄膜晶体管的光写入多级存储器

由于依靠不断缩小存储单元尺寸来提升单位面积存储能力的传统方法将会面临着器件尺寸的物理极限等瓶颈,人们逐渐将目光投向了能够在单一器件上实现高密度存储的多级存储器件。本文利用有机薄膜晶体管中存在的持续光电导率(PPC)效应制备了一个光写入操作的多级存储器件,有效地避免了电写入操作对器件的接触破坏性和较大功耗问题。研究了在不同功率(60,100,150μW/cm²)和不同持续时间(50～1 000 ms)700 nm光写入脉冲作用下的器件存储状态,器件在光功率为60μW/cm²、持续时间为100 ms的光脉冲下展现出了低至0.189 nJ的极低工作功耗。通过对器件施加16个连续光写入脉冲证实器件具有16个有效的存储状态,实现了存储容量为4 bits的多级光写入存储功能。     

Nonvolatile Resistive Switching and Physical Mechanism in LaCrO_3 Thin Films

Polycrystalline LaCrO_3(LCO) thin films are deposited on Pt/Ti/SiO_2/Si substrates by pulsed laser deposition and used as the switching material to construct resistive random access memory devices. The unipolar resistive switching(RS) behavior in the Au/LCO/Pt devices exhibits a high resistance ratio of ~104 between the high resistance state(HRS) and low resistance state(LRS) and exhibits excellent endurance/retention characteristics.The conduction mechanism of the HRS in the high voltage range is dominated by the Schottky emission, while the Ohmic conduction dictates the LRS and the low voltage range of HRS. The RS behavior in the Au/LCO/Pt devices can be understood by the formation and rupture of conducting filaments consisting of oxygen vacancies,which is validated by the temperature dependence of resistance and x-ray photoelectron spectroscopy results.Further analysis shows that the reset current I_R and reset power P_R in the reset processes exhibit a scaling law with the resistance in LRS(R_0), which indicates that the Joule heating effect plays an essential role in the RS behavior of the Au/LCO/Pt devices.     

Charge trapping in n-AlxGa1-xAs “insulators” and related device instabilities

In some devices based on GaAs/Al_xGa₁-_xAs heterostructures, the Al_xGa₁-_xAs plays the role of a wide band gap “insulator”. These devices are therefore excellent systems for studying charge trapping in Al_xGa₁-_xAs. It is a poorly understood property of Al_xGa₁-_xAs that incorporation of any n-type dopant results in the formation of a deep electron trap, the DX center. Recent experiments on heterostructure devices have probed both thermal and athermal (hot electron) capture and emission by the DX center. By observing the trapping behavior as the composition (Al mole fraction) of the alloy is varied, the relationship between the trap level and the band structure of the host material has been clarified. A remarkable result is the observation of electron trapping at alloy compositions where the trap state is resonant with the conduction band.     

High responsivity, LWIR dots-in-a-well quantum dot infrared photodetectors

In this paper we report studies on normal incidence, InAs/In_0.15Ga_0.85As quantum dot infrared photodetectors (QDIPs) in the dots-in-a-well (DWELL) configuration. Three QDIP structures with similar dot and well dimensions were grown and devices were fabricated from each wafer. Of the three devices studied, the first served as the control, the second was grown with an additional 400 Å AlGaAs blocking layer, and the third was grown on a GaAs n+ substrate with the intention of testing a single pass geometry. Spectral measurements on all three devices show one main peak in the long-wave IR (≈8 μm). The absorption was attributed to the bound-to-bound transition between the ground state of the InAs quantum dot and the ground state of the In_0.15Ga_0.85As well. Calibrated peak responsivity and peak detectivity measurements were performed on each device at 40, 60, and 80 K. For the same temperatures, frequency response measurements from 20 Hz to 4 kHz at a bias of V_b=−1 V were also performed. The addition of the blocking layer was shown to slightly enhance responsivity, which peaked at 2.4 A/W at 77 K, V_b=−1 V and responsivity was observed to be significantly reduced in the single pass (n+ substrate) sample. The rolloff of the frequency response was observed to be heavily dependent on temperature, bias, and irradiance. The results from the characterization of each sample are reported and discussed.     

Dynamic polarization rotation and vector field steering based on phase change metasurface

Polarization rotation and vector field steering of electromagnetic wave are of great significance in modern optical applications. However, conventional polarization devices are bulky, monofunctional and lack of tunability, which pose great challenges to the miniaturized and multifunctional applications. Herein, we propose a meta-device that is capable of multi-state polarization rotation and vector field steering based on phase change metasurface. The supercell of the meta-device consists of four Ge₂Sb₂Te₅ (GST) elliptic cylinders located on a SiO₂ substrate. By independently controlling the phase state (amorphous or crystalline) of each GST elliptic cylinder, the meta-device can rotate the polarization plane of the linearly polarized incident light to different angles that cover from 19.8° to 154.9° at a wavelength of 1550 nm. Furthermore, by merely altering the phase transition state of GST elliptic cylinders, we successfully demonstrated a vector field steering by generating optical vortices carrying orbital angular momentums (OAMs) with topological charges of 0, 1 and −1, respectively. The proposed method provides a new platform for investigating dynamically tunable optical devices and has potential applications in many fields such as optical communications and information processing.