磁性荧光粉的制备方法及其性能和应用的研究

本文叙述了磁性荧光粉的制备方法、性能和使用方法;探讨了在制备过程中影响荧光亮度和磁力强度的一些主要因素;并研究了磁性荧光粉在水介质中使用时的分散情况.确定了制取优质磁性荧光粉的最佳条件,以及配制水磁悬液时所采用的分散剂的种类和条件.同时与日、美同类产品在技术性能上做了比较.     

荧光粉粒度分布的数学模型

荧光粉的粒度分布,必须满足器件的特性,适应涂复的工艺,是荧光粉最重要的参量之一. 国内,已越来越清楚地认识到了荧光粉粒度分布的重要性,对荧光粉粒度分布的研究,也正在大力展开. 荧光粉粒度分布的研究,涉及多方面的内容.本篇文章仅就荧光粉粒度分布的数学模型     

AlON:Ce3+荧光粉的制备及光谱研究

采用高温固相法合成了不同浓度Ce³⁺ 掺杂的AlON荧光粉. 通过X射线和扫描电镜分析了荧光粉的物相和显微结构, 且利用荧光光谱仪测试了AlON:Ce³⁺荧光粉的发光光谱.结果表明, 荧光粉在305 nm紫外激发下发射390 nm为中心的蓝光.温度依赖荧光谱测试发现, AlON:Ce³⁺荧光粉在150 ℃ 下发射强度能保持室温发射强度的86%.因此, 该荧光粉是大功率白光发光二极管用最佳荧光粉的候选材料之一. 关键词： 光致发光 浓度猝灭 热稳定性     

基于Mie散射理论的白光发光二极管荧光粉散射特性研究

基于Mie散射理论,对大功率发光二极管封装中荧光粉的光激发、吸收、散射等作用进行数值模拟,仿真计算在不同白光色温时前后向散射光的强度比例,研究了荧光粉的颗粒大小对白光发光二极管最大光通量的影响.对保型荧光粉涂覆结构中不同直径荧光粉颗粒和不同色温时的光效进行了分析,还分析了同样色温下不同荧光粉颗粒直径、涂层的厚度对白光发光二极管出光的空间色温分布均匀性的影响.研究中所采用的器件激发光谱和发射光谱都为材料的实测光谱,而并非假设的单一光谱.研究表明:在采用保型荧光粉涂覆结构的前提下,当荧光粉颖粒直径为0.5μm时能使发光二极管光通量达到最大;荧光粉颗粒越小,发光二极管空间色温分布均匀性越好;对给定的封装结构,荧光粉涂层厚度为0.8 mm时空间色温分布均匀性最佳.     

合成工艺对Sr3B2O6∶Eu2+黄色荧光粉结构和发光性能的影响

采用高温固相法合成了暖白光LED用Sr3B2O6∶Eu2+黄色荧光粉,系统地研究了灼烧温度和保温时间对荧光粉的结构和发光性能的影响.结果表明,荧光粉的最佳合成温度和保温时间分别为1150℃和2h,荧光粉的晶体结构为三角晶系Sr3B2O6,烧结温度和保温时间对晶粒的发育具有重要的影响.荧光粉的激发光谱是主峰位于398 nm宽带谱,近紫外和蓝光均能激发,发射光谱是峰值位于574 nm的宽带谱,烧结温度和保温时间主要影响荧光粉的发光强度.     

荧光粉封装方式对多芯片阵列LED封装效率的影响

针对荧光粉封装的多芯片LED,用Monte Carlo光线追迹的方法仿真光线在蓝光芯片和荧光粉中的传播,并分析了荧光粉封装方式对多芯片阵列LED封装效率的影响.结果表明:随着荧光粉层和芯片之间的距离增大,保型涂覆的LED封装效率先增加后减小,最大封装效率为59%;平面涂覆的LED在芯片间距为0.2mm、荧光粉层和芯片之间的距离为0.28mm时,封装效率为77.183%;荧光粉层的曲率半径对封装效率的影响较小.     

白光LED用单基质荧光粉BaSrMg( PO4)2∶Eu2+的制备及发光性能研究

采用高温固相反应法在1 200℃下制备了 Eu2+激活的BaSrMg( PO4)2高亮度白光荧光粉,并对其晶体结构和发光性能进行了研究.荧光光谱研究表明该荧光粉的发射光谱由两个谱带组成,其中心分别位于424和585 nm处,归结为Eu2+分别占据了基质中Sr2+,Ba2+格位而导致的4f 65d1→4f7电子跃迁.两个发射峰的激发光谱均分布在250～400nm的波长范围内,峰值位于360nm左右.表明该荧光粉可被INGaN管芯产生的近紫外辐射有效激发,是一种性能良好的白光LED单一基质白光荧光粉.深入考察了基质中不同Ba和Sr的比例、Eu2+掺杂浓度对荧光粉发光强度和色坐标的影响,并可通过改变上述参数实现该荧光粉的色坐标可调性,在最优条件下该荧光粉发光已在白光区域.考察了Eu2+掺杂浓度对荧光粉量子效率的影响,为荧光粉的最佳掺杂浓度提供理论依据.     

LED用La2(WO4)3∶Eu3+红色荧光粉合成及光谱性能

 采用水热法并进行热处理成功合成了Eu3+掺杂La2(WO4)3红色荧光粉.通过粉末X射线衍射、扫描电子显微镜,以及能谱来表征荧光粉的晶体结构、颗粒大小、形貌及成分|用激发光谱和发射光谱以及荧光衰减曲线来表征荧光粉的荧光性能.X射线衍射分析确认了水热的前驱体和后期热处理的样品主要相分别为三斜晶系的La2W2O9和单斜晶系的La2(WO4)3.激发光谱表明La2(WO4)3∶Eu3+荧光粉样品在395 nm处有一个最强的吸收峰,与紫外InGaN LED芯片发射波长相匹配|而且La2－xEux(WO4)3荧光粉在395 nm激发下有强红光发射.因此,La2－xEux(WO4)3荧光粉有望成为新一代白光LED用的红色荧光粉.     

纳米棒状GdPO4:Eu3+荧光粉的合成及其发光性能的研究

采用溶解热法合成出了纳米棒状GdPO4:Eu3+荧光粉,其中不同磷源和pH值对最终产物的形成起着关键的作用.将纳米棒状和块体GdPO4:Eu3+荧光粉的发光性能进行了对比,其中与块体GdPO4:Eu3+荧光粉相比,纳米棒状GdPO4:Eu3+荧光粉的色纯度得到了改善,而在激发光谱中,纳米棒状:GdPO:Eu3+荧光粉的基质吸收和Eu-O电荷转移跃迁吸收都发生了蓝移.     

涂敷红、绿荧光粉的白光LED显色性研究

通过蓝光发光二极管(LED)芯片激发红、绿两种荧光粉制作白光LED,首先保持两种荧光粉的配比不变,依次从2700～13000 K改变相关色温,发现在某一色温段时,显色指数达到最高.然后依次改变两种荧光粉的配比,重复试验,发现不同的荧光粉配比,达到最高显色指数所对应的色温段不同.试验结果表明,通过合理匹配红、绿荧光粉和硅胶三者之间的比例.可以实现在2700～13000 K之间的任一色温区,显色指数均能达到90以上,在4000 K以下的低色温区,显色指数可达到96.基于此.通过选择和匹配LED蓝光芯片、荧光粉的激发、发射波长,以及它们之间的比例关系,可以实现在任意色温段使显色指数最大化的白光LED光谱设计.     

Zum Gudden-Pohl-Effekt bei einem Zink-Kadmium-Sulfid-Phosphor

Luminescence flashes in an excited ZnCdS(Ag)-phosphor occur when electric fields are put on. At ?120° C such flashes also occur if the electric field is applied some time after excitation is removed. The intensity depends on additional fields acting while the phosphor is excited by light. The observations can be interpreted if the flashes are assumed to arise near the surface instead of the interior of the phosphor.     

荧光粉层厚度对激光照明的影响

针对荧光粉层厚度对激光照明的影响展开研究,采用自行设计的反射式照明模块进行测试,利用独创的荧光粉层厚度确定方案精确地确定厚度。通过实验分析得出:随着荧光粉层厚度的增加,光通量逐渐增大,在荧光粉层厚度达到600μm之后呈现下降趋势;在荧光粉层厚度达到600μm之前,蓝光含量呈下降趋势,600μm后略有上升,但整体趋于稳定;色温与蓝光含量变化趋势相同,存在正比关系。同时,本文还验证了光分布密度对激光照明有很大影响。     

Enhanced luminescence and degradation resistance in Tb modified Yttrium Borate core-nano silica shell phosphor under UV and VUV excitation

Composition variation in optimized solid state reaction conditions has been done to achieve intense green emission in YTb_xBO₃ phosphor under UV and VUV (147 nm resonant Xe*, 172 nm Xe₂* excimer band) excitation. Inert interface layer created by fabricating a shell of silica nanoparticles over individual phosphor grain protected the phosphor surface from deterioration and oxidation of luminescent ion (Tb³⁺) thus completely arresting phosphor degradation. At optimum Tb content of 20 mol%, integrated photoluminescence intensity of developed YTb_xBO₃ phosphor is four times higher than commercial green YBT. With short decay time of 4 ms, YTb_xBO₃ core-nano silica shell green emitting phosphor has great application potential in PDP panel and phosphor coated Xe lamps.     

Quantum yield and luminous efficacy of thin-film ZnS electroluminescent emitters

The instantaneous values of the internal quantum yield and luminous efficacy of thin-film electroluminescent emitters are experimentally studied as functions of time, the mean field in the phosphor layer, and the charge passing through this layer. Also, the dependences of the internal quantum yield and luminous efficacy on the exciting voltage amplitude are explored. At exciting voltage frequencies above 10 Hz, the time dependences of the instantaneous quantum yield and luminous efficacy exhibit a dip in the range where the brightness and current through the phosphor layer grow and a peak in the range where the brightness and current decline. The dip and peak are related to the different rates of rise and fall of the brightness and current.     

TL and EPR studies of CaSO4:Dy phosphor to investigate its efficacy in measurement of food irradiation dose at sub-ambient temperatures

The effects of sub-ambient temperatures of irradiation and dose response of CaSO₄:Dy phosphor was investigated. The irradiation dose in the range 0.5–7.0 kGy was chosen to meet the requirement of commercial food irradiation at low temperature. Commercially available phosphor showed no significant change in glow curve structure with low temperature of irradiation. In order to enhance the sensitivity of the low temperature glow peak (142 °C), the phosphor was subjected to different post-preparation thermal treatments at 700–900 °C. The change in glows and improvement in dose response characteristics were explained by Electron Paramagnetic Resonance (EPR) spectroscopy. At sub-ambient temperature of irradiation, the behavior of thermally treated CaSO₄:Dy phosphor with increasing dose revealed improved linear response of the low temperature glow peak and could be an efficient dosimetry system for the food commodities irradiated at low temperatures.     

白光LED用稀土荧光粉的制备和性质

在还原气氛保护下利用高温固相法合成了化学组分为(M₁,M₂)₁₀(PO₄)₆X₂(M₁=Ca,Sr,Ba;M₂=Eu,Mn;X=F,Cl,Br)的可被紫光激发的蓝光、绿光和红光荧光粉,制备了紫光LED芯片+蓝光荧光粉+YAG荧光粉的二基色白光LED;紫光LED芯片+蓝光荧光粉+红光荧光粉的二基色白光LED,以及紫光LED芯片+蓝光荧光粉+绿光荧光粉+红光荧光粉的三基色白光LED。测试了所有制备的白光LED在不同的直流电驱动下的色度坐标、相关色温和显色指数。     

White light emission from fiber pigtailed laser module

We fabricated a phosphor-conversion white light using an InGaN laser diode that emits 445 nm and phosphor that emit in the yellow. The InGaN laser diode was coupled to an optical fiber firstly and the phosphor was excited by the laser light output from the fiber. At 350 mA injection current the luminous flux and the luminous efficacy was 73 lm and 42.7 lm/W, respectively. The luminance was estimated to be 50 cd/mm². The relationship of the luminous flux and the luminous efficacy of the white light with injection current were measured and discussed.     

制备温度对(Mg1-x-yBaxSry)1.95SiO4∶0.05Eu 荧光粉三元相图及色像图的影响研究

采用高温固相法分别在1 150,1 200和1 250 ℃制备(Mg_1-x-yBa_xSr_y)_1.95SiO₄∶0.05Eu荧光粉系列样品,通过XRD、PL和紫外发光照相记录,建立起组分-物相-色像对应关系,推导得到其三元色像图,并探讨制备温度对物相及色像影响。物相分析表明：(Mg_1-x-yBa_xSr_y)_1.95SiO₄∶0.05Eu荧光粉物相组成与组分间存在渐变性,从单组分点出发物相组成数目逐渐增多且各物相含量连续变化,在富Ba2+端形成Ba₂SiO₄相单相区;随着温度升高,Ba₂SiO₄单相区扩大(Mg2+(Sr2+)在1 150,1 200和1 250 ℃固溶度为20_at%(30_at%),30_at%(35_at%), 35_at%(40_at%)),混合相区同一组分点物相组元数减少(若该组分点包含α-Sr₂SiO₄和Ba₂SiO₄相则其含量增加)。光谱分析表明：同一样品在365 nm激发下比254 nm激发下绿光波段荧光发射强但红光光波段发射弱;荧光颜色和亮度也随组分、相组成呈渐变性,Ba₂SiO₄单相区为绿色荧光且随Sr2+和Mg2+固溶荧光亮度提高,在混合相区随着Ba2+含量减少荧光颜色由绿变红,红光区域随着Mg2+减少亮度逐渐减弱[如：(Mg_1-ySr_y)₂SiO₄∶Eu系列随y增大由亮红变成暗红];随着温度升高,Ba₂SiO₄单相区内荧光粉亮度整体提高且最亮荧光粉组分中Mg2+和Sr2+固溶度提高;混合相区荧光强度整体提高,且绿色荧光粉组分区域增大(如：在254 nm激发下,(Mg_1-xBa_x)_1.95SiO₄∶0.05Eu系列由红色变成绿色时x_{1 150 ℃}=0.5,x_{1 200 ℃}=0.4,x_{1 250 ℃}=0.3,(Ba_1-ySr_y)_1.95SiO₄∶0.05Eu系列由绿色变成红色时y_{1 150 ℃}=0.6,y_{1 200℃}=0.7,y_{1 250 ℃}=0.8,(Ba_x(Mg_0.2Sr_0.8)_1-x)_1.95SiO₄∶0.05Eu系列由红色变成绿色时x_{1 150 ℃}=0.5,x_{1 200 ℃}=0.4,x_{1 250 ℃}=0.3)。研究建立了(Mg_1-x-yBa_xSr_y)_1.95SiO₄∶0.05Eu粉体组分-结构(相)-制备(温度)-性能(荧光)对应关系;优选出(Mg_0.35Ba_0.6Sr_0.05)_1.95SiO₄∶0.05Eu/(Mg_0.6Sr_0.4)_1.95SiO₄∶0.05Eu等高效绿色/红色荧光粉;发现单相比混合相绿色荧光粉亮度高,固溶度提高有利于Ba₂SiO₄单相绿色荧光粉效率的提高;温度提高扩大了Ba₂SiO₄单相荧光粉、混合相区绿色荧光粉区域,且提高(Mg_1-x-yBa_xSr_y)_1.95SiO₄∶0.05Eu荧光粉整体亮度。由(Mg_1-x-yBa_xSr_y)_1.95SiO₄∶0.05Eu系列荧光粉得出的色像随组分、温度渐变规律可应用于其他组元荧光粉优选,对新发光材料的系统开发具有一定指导意义。     

White-electroluminescent device with horizontally patterned blue/yellow phosphor-layer structure

White-electroluminescent (EL) devices with stripe-patterned and square-patterned phosphor-layer structures are fabricated through a screen printing method: electrode/BaTiO₃ insulator layer/patterned blue ZnS:Cu, Cl and yellow ZnS:Cu, Mn phosphor layer/ITO PET substrate. The luminous intensities of EL devices with stripe-patterned and square-patterned phosphor-layer structures are 33% and 23% higher than a conventional device with the phosphor-layer structure without any patterns using the phosphor blend. It can be explained in terms of the absorption of the emitted blue light of blue phosphor layer by the yellow-emitting phosphor layer. The EL device of our patterned phosphor-layer structure gives the possibility to enhance the luminance.     

白光LED光斑均匀性的改进

用于照明领域的白光LED,其出射光斑的色度均匀性对于产品性能有着更加重要的意义.介绍了目前工业上制作白光LED主要采用的荧光粉灌封点胶工艺.并在目前主流灌封点胶工艺的基础上通过改善荧光粉层结构形状,以提高白光LED器件的出射光斑均匀性.并通过九点法对不同工艺结构下LED出射光斑的空间色度分布进行了测量和分析.通过分析,虽然采用不同的粉层结构,能够一定程度上改善白光光斑的色度均匀性.但总体上,采用这种传统的点胶工艺制作的器件的白光光斑性能不好,现有的荧光粉层灌封点胶工艺存在很大的弊端.荧光粉层的可控性是影响色度均匀性(即光斑均匀性)的主要因素,包括单个器件内的光斑和器件之间的颜色一致性都不理想.