Study of the THGEM detector with a reflective CsI photocathode

The THGEM detector without and with a CsI has been tested successfully. The optimal parame- ters of THGEM have been determined from eight samples. The UV photoelectric effect of the CsI photocathode is observed. The changing tendency related to the extraction efficiency (ε<,extr>) versus the extraction electric field is measured, and several electric fields influencing the anode current are adjusted to adapt to the THGEM detector with a reflective CsI photocathode.     

用于高速摄影变象管的软X射线光电阴极

光阴极由衬底(包括介质阴极的导电基底)和光电发射膜构成。采用了聚丙烯、Formvar和Paylene三种有机薄膜作阴极衬底。建立了这些薄膜的制备技术。用一台自制的软X射线单色仪在277—7469ev光子能量范围内测量了这些薄膜的透过率。 研究了CsI、CsBr、Au和MgF₂四种光电阴极的光电发射特性和光电发射与阴极厚度的关系,找出了最佳阴极厚度。用软X射线单色仪在277—7469ev光子能量范围内测量了最佳厚度阴极的绝对量子效率,四种阴极最大值分别为4.50、2.90、0.25和0.12。我们还在同一阴极衬底上分区制备了四种阴极,在变象管荧光屏上比较其亮度,结果和测量的一致。 用LAB5型表面分析仪对CsI和Au阴极的光电子初能量分布作了测量,CsI阴极光电子初能量分布半高宽远小于Au。因此CsI是适用于高速摄影变象管比较理想的软X射线光电阴极。     

Ion-beam sputtering deposition of CsI thin films

Stoichiometric CsI thin films were deposited by Ar ion-beam sputtering of a CsI target at room temperature. The sputtered 100-nm thick CsI films obtained were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), atomic force microscopy (AFM) and quantum efficiency (QE) measurements. As it was expected, the chemical, morphological, crystalline and photo-emissive properties of CsI films obtained depended on the deposition parameters. Comparison with results obtained for evaporated CsI films indicated that surface morphology, i.e., the effective photo-emissive surface area, is one of the important parameters in influencing the QE . PACS 81.15.-z; 79.60.Dp; 68.37.Ps     

The effect of Pb2+ dopant in the crystal of CsI and its application as scintillation detector: a study of alpha particles

Scintillation crystals have been used in various fields, such as high energy physics, nuclear instrumentation, radiation measurements, medical imaging, nuclear tomography, astrophysics and other fields of science and engineering. For these applications, the development of scintillation crystals with good performance is required. Scintillation crystals based on cesium iodide (CsI) matrix are matters with relatively low hygroscopicity, easy to handle and of low cost, characteristics that favor their use as radiation detectors. In this study, pure CsI crystal and lead doped CsI crystals were grown using the Bridgman vertical technique. The concentration of the lead doping element (Pb) was studied in the range of 10^?2 to 5×10^?4 M. The distribution of the doping element in the crystalline volume was determined by atomic absorption technique. The CsI:Pb crystal with nominal concentration of 10^?3 M was cut into 14 slices of 6 mm. The results show a higher concentration at the top of the crystal with a decrease in the initial phase of growth. The dopant concentration of Pb showed good uniformity from the slice 2 to the slice 12: the region is, therefore, suitable for use as a radiation detector. The luminescence emission of these crystals was measured. A predominant luminescence band near 450 nm and a single broad band around 320 nm were found with the addition of the Pb²⁺ ions in the CsI matrix. Alpha particles spectrometry measurements were carried out to evaluate the developed scintillators.The resolution of 5.6% was obtained for the CsI:Pb 5×10^?4 M crystal, when excited with alpha particles from a ²⁴¹Am source, with energy of 5.54 MeV.     

X光作用下CsI:Tl晶体的转换效率研究

X光转换材料在数字辐射成像系统中具有很重要的作用,它的效率对整个系统的量子探测效率起到决定性的作用。对CsI∶Tl晶体在X光激发下的发光效率进行详细分析,根据X光在物质中的衰减和吸收规律,从理论上推导了其对X光转换效率的关系,并建立了利用CCD相机作接收系统时的图像数据的表达形式,表明该系统输出与入射X光照射量成线性关系;并在30 MeV射频加速器上进行了实验验证。     

软X射线条纹相机光阴极能谱响应灵敏度

通过对条纹相机光阴极在光电转换过程中光电子产生过程的分析,推导了光阴极在软X射线波段的能谱响应灵敏度计算公式,并运用该公式探讨了阴极厚度、掠入射角度等参数对能谱响应灵敏度的影响,计算并分析了Au,CsI在0.1~10keV范围内的能谱响应曲线和特性,并利用标定试验数据对共识和模型的可靠性进行了验证。结果表明,CsI阴极的最佳厚度在60nm左右,Au阴极的最佳厚度在10nm左右;CsI阴极的能谱响应灵敏度比Au阴极高1~2量级。     

Gaseous photodetectors with solid photocathodes

Remarkable properties of gas photodetectors make them attractive for application in high energy physics, astrophysics, and medical imaging. This review presents the results of research and development of gaseous photodetectors with solid photocathodes (GPDs). In particular, efficient photocathodes for the ultraviolet (mainly CsI) and the visible ranges, including photocathodes with protective dielectric nanofilms, are described. Some problems of the physics of gaseous photodetectors and photocathodes are considered: photoelectron backscattering in gas, photoemission amplification in an electric field, photoelectron transport through nanofilms, protective properties of nanofilms, and photon and ion feedback. A separate section is devoted to GPDs based on gas electron multipliers (GEMs), including sealed GPDs and cryogenic two-phase avalanche detectors with CsI photocathodes.     

用于暗物质探测实验的CsI(Tl)晶体探测器性能的实验研究

在直接测量暗物质的实验中,反冲核能量的Quenching Factor是一个重要参数.用低能X射线源对一套测量入射中子引起的反冲核能量Quenching Factor的系统进行了能量刻度,得到了这套系统的能量响应关系.PMT单光电子的发射对应于晶体中的能量沉积约为0.32keV.同时研究了不同能量的X射线引起的PMT输出电流信号的积分时间宽度与积分电荷的关系,得到最佳的PMT输出电荷收集条件.     

CsI:Na(CsI:Tl)荧光透过率和对X射线的转换因子

在建立模型的基础上,较为全面地分析了CsI:Na(CsI:Tl)X射线转换屏的荧光透过率及对X射线的转换因子,明确了转换因子与X光子能量、转换屏厚度、衬底反射率、荧光吸收系数之间的函数关系.计算表明,荧光透过率(及转换因子)与衬底反射率和1/(σL)值有较强的关系,为有较高的荧光透过率,实际制作的CsI:Na转换屏的1/(σL)值应在10以上,最好能达到30~40.在相同情况下,反射方式的转换因子高于透射方式.用增加厚度来提高转换因子时应考虑荧光透过率降低的负面影响.可选择适当的CsI:Na(CsI:Tl)厚度使转换因子最佳.     

CsI光阴极在10-100 keV X射线能区的响应灵敏度计算

为了满足10-100 keV高能X射线光电探测器研究的需要,对CsI光阴极在该能量范围的响应灵敏度进行了研究.基于高能量X射线光子与材料相互作用的物理过程,分析了康普顿散射等效应对CsI响应灵敏度的影响.推导了CsI的响应灵敏度与二次电子平均逃逸深度和光阴极厚度的关系式和二次电子平均逃逸深度与入射光子能量的关系式,计算了CsI在10-100 keV范围内的响应灵敏度,计算结果与实验测试数据相符,验证了分析与推导的可靠性.根据计算可以获得不同入射X射线能量下CsI光阴极的最佳厚度,从而为高能X射线光电探测器的设计优化提供了理论参考.     

CsI(Tl)闪烁体软X光能量响应的模拟研究

CsI(Tl)闪烁体是X光转换为可见光比较重要的一个部件,在惯性约束聚变中的X光诊断等方面有着十分重要的应用。通过Geant4软件较为全面地分析了CsI(Tl)闪烁体软X光能量响应,模拟了1~5keV的软X光入射不同厚度(20,30,50μm)CsI(Tl)的能量沉积谱,探究了粒子之间相互作用的物理过程,并比较了不同能量软X光在不同厚度CsI(Tl)闪烁体中的沉积效率。仿真结果表明,随着CsI(Tl)闪烁体厚度的增加,软X光在CsI(Tl)闪烁体中沉积的能量也逐渐增加,沉积效率与CsI(Tl)闪烁体厚度成正比。模拟研究为选择合适厚度的闪烁体做低能段软X光探测实验做铺垫。     

一种新型X射线象增强器光电阴极

我们研制了一种X射线象增强器透射式光电阴极,即高低密度夹芯结构的CsIX射线光电阴极,它的量子效率是高密层CsI的1～10倍.该技术应用于X射线象增强器,探测效率可以提高一个量级,使增益较低的MCP都可以作为产品使用.     

CsI∶Tl晶体对高能X光照射量的响应关系研究

在X光探伤系统中使用效率较高的CsI∶Tl晶体作为X光转换体。CsI∶Tl晶体对X光的响应关系是精密图像处理、定量测量所需的一项重要参量,理论上已经推导了CsI∶Tl晶体对X光的响应呈现线性关系,并针对性地设计了在60Co放射源上的定量测量实验,所获数据不仅充分证明了理论推导的正确性,还证明了相应系统的这种线性关系的线性度非常好。     

Strain-induced room temperature photoluminescence in CsI and CsI(Na)

The photoluminescence produced from mechanically deformed crystals of pure CsI and the photoluminescence increase of CsI(Na) crystals similarly prepared, where the amount of sodium is considerably less than that required for maximum photoluminescence efficiency was measured. Several interpretations of the results are suggested.     

X光高分辨探测用CsI(Tl)晶体的蒙特卡罗模拟研究

提出了一种基于CsI(Tl)闪烁晶体和面阵CCD器件、采用光纤和光纤面板进行光耦合及传输、以扇形束线阵扫描方式实现对X光高分辨探测的方案。CsI(Tl)晶体的尺寸大小将直接影响到晶体的发光效率及X光的高分辨探测,据此开展了蒙特卡罗模拟研究。模拟研究了X射线能量、X射线源到探测晶体的距离(源距)、CsI(Tl)晶体的厚度与X射线能量分布、全能峰效率与CsI(Tl)闪烁晶体转换效率之间的关系。结果表明,当X射线能量为120~450 keV,CsI(Tl)晶体尺寸厚度为0~1.5 cm变化时,全能峰效率的变化范围为31.34~96.74%,CsI(Tl)闪烁晶体的转换效率的变化范围为12.8~97.43%。可见,X射线的能量及CsI(Tl)闪烁晶体尺寸的厚度,是决定X光高分辨探测的重要参量,这对优化X光高分辨探测用CsI(Tl)晶体的尺寸设计具有一定的参考价值。     

狭长CsI(Tl)闪烁体发光效率的研究

提出了基于狭长CsI（Tl）闪烁体和面阵CCD器件,采用光纤和光纤面板进行光耦合及传输,以扇形束线阵扫描方式实现对X射线探测与成像的工业X-CT系统探测器方案.基此,通过物理分析及数学建模,利用Matlab模拟研究了X光能量小于450 keV时狭长CsI（Tl）闪烁体的发光效率等性能指标.研究结果表明：当光电吸收截面μph和康普顿吸收截面μc分别为0.000313和0.0000295、反射层反射系数R和衬底反射系数Rs分别取0.95和0.8、荧光线性吸收系数σ取0.000222 μm－1时,得到狭长CsI(Tl)闪烁晶体的长度l、高度h和宽度w取值范围分别是926～4512 μm、242～5000 μm和242～5000 μm的结论.在此范围内,既可使闪烁晶体有较好的空间分辨率又可获得最高的发光效率.     

高灵敏高稳定的碘化铯阴极密封式分幅变像管研制

为解决采用Au光电阴极、开放式结构的分幅变像管探测效率低、稳定性差的问题,研制了一种采用CsI光电阴极的密封式分幅变像管。为了对比不同光电阴极对X射线的响应强度,密封式分幅变像管制作有一条Au微带阴极和一条CsI微带阴极。完成了密封式分幅变像管的结构设计、工艺制作和实验测试。研究结果表明:当加载半高宽度200 ps、幅值?2.7 kV的选通脉冲时测得其时间分辨为65 ps;在非单色高能X射线源照射下,CsI阴极的静态响应强度是Au阴极的3.4倍;大气环境中存储1000 h后密封式分幅变像管的静态响应强度仅降低到完成制作时的83%。上述结果表明采用CsI阴极的密封式分幅变像管具有更高的探测效率和稳定性,可有效提升X射线分幅成像质量和可靠性。     

Effect of very high pressure on the optical absorption spectra in CsI

The effect of very high pressure on the fundamental optical absorption edges in CsI crystal was investigated between u.v. and near i.r. region by a diamond anvil type high pressure cell. With increasing pressure the fundamental absorption edge energy in CsI shifts from u.v. to i.r. region. At the pressure of 45 GPa the CsI becomes completely opaque. When the indirect band gap is assumed for CsI at high pressures, the insulator to metal transition in CsI is expected to occur at about 70 GPa from the pressure versus absorption edge curves. The availability of CsI as one of the pressure standard up to 50 GPa region is also discussed.     

The photoelectron spectra of gaseous alkali halides

The He I photoelectron spectra of the gaseous forms of CsF, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, NaI, KI, RbI, and CsI have been obtaine using a high-temperature spectrometer equipped with an internally-located, laser-beam heated sample oven. The spectral bands have been assigned molecul origins by use of MO calculations, spin—orbital splitting considerations, band intensity relations, polymer formation tendencies, and mass spectromet     

暗物质寻找实验中CsI(Tl)晶体反符合探测器实验研究

一个正在建设的位于韩国Y2L地下实验室的低能暗物质探测实验中, 采用了CsI(Tl)晶体反符合探测器作为主动屏蔽体. 本工作对CsI(Tl)晶体反符合探测器的实验性能进行了研究. 通过FADC系统记录的脉冲波形数据, 研究了探测器的能量分辨率和波形甄别的能力; 研究相同能量γ射线入射到反符合探测器不同位置的相对光输出将有助于选择探测器的工作参数; 为了解晶体自身放射性对暗物质测量的影响, 利用低本底HPGe探测器对CsI(Tl)晶体内部的放射性进行了测量, 得到晶体内部Cs同位素的放射性活度. 探测器系统进行了约18d的试运行取数. 实验数据表明, CsI(Tl)晶体探测器的反符合效率约为31% HPGe探测器的本底计数率水平约为133cpd. 为了进行暗物质探测研究, 需要采取有效的方法进一步降低探测器的本底水平.