Acoustic attenuation in ferroelectric Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> crystals

The temperature and frequency dependencies of sound attenuation for the proper uniaxial ferroelectric Sn₂P₂S₆, which has a strong nonlinear interaction of the polar soft optic and fully symmetrical optic modes that is related to the triple well potential, were studied by Brillouin spectroscopy. It was found that the sound velocity anomaly is described in the Landau-Khalatnikov approximation with one relaxation time. For explanation of the observed temperature and frequency dependencies of the sound attenuation in the ferroelectrric phase, the accounting of several relaxation times is needed and, for quantitative calculations, the mode Gruneisen coefficients are more appropriate as interacting parameters than are the electrostrictive coefficients. Relaxational sound attenuation by domain walls also appears in the ferroelectric phase of Sn₂P₂S₆ crystals.     

Investigation of the dielectric,optical and photorefractive properties of Sb-doped Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> crystals

In this work we report results on electro-physical, optical and photorefractive investigations for Sb-doped Sn₂P₂S₆ crystals. The crystals are obtained by two methods: the vapour-transport technique and the Bridgman technique using stoichiometric Sn₂P₂S₆ composition with different amounts of antimony in the initial compound. The good optical quality of the crystals obtained with the Bridgman technique is underlined. The dependences of the photorefractive two-beam coupling coefficient and the grating build-up time are investigated at the wavelength of 633 nm. It is found that the sample doped with 1.5% of Sb is characterized by an optimal combination of the main photorefractive parameters exhibiting a fairly high two-beam coupling coefficient (up to 20 cm⁻¹) and a short response time (1.3 ms) that is the shortest among all the previously studied Sn₂P₂S₆ crystals in the red spectral region.     

Influence of the sample orientation in Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> crystals on the hydrostatic piezoelectric coefficients

The influence of the sample orientation on the effective value of the hydrostatic piezoelectric coefficients d _h ⁽ⁱ⁾ of Sn₂P₂S₆ crystals has been studied. The hydrostatic piezoelectric coefficients d _h ⁽¹⁾ and d′ _h ⁽³⁾ , were measured, d _h ⁽¹⁾ =(244±3) pC/N and d′ _h ⁽³⁾ =(92±1) pC/N. The hydrostatic piezoelectric coefficient d _h ⁽³⁾ for orthogonal axis system was calculated to be d _h ⁽³⁾ =(87±2) pC/N. The, optimal orientation of the sample has been found as (Xy l)−20°-cut. Maximal value of the effective hydrostatic piezoelectric coefficient d _h ⁽¹⁾ equals 260 pC/N. Double rotated samples were also studied. The orientation of the samples insensitive to the pressure has been found. The theoretical mean value of hydrostatic piezoelectric coefficient (d _h ) _mean corresponding to randomly oriented Sn₂P₂S₆ grains in a poled composite has been calculated to be (d _h ) _mean =136 pC/N.     

Wave mixing in nominally undoped Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> at high light intensities

The intensity dependence of the photorefractive response of Sn₂P₂S₆ is studied for the Kr⁺-laser wavelength of 647 nm and pump-beam intensities of up to 10 W/cm². A considerable enhancement of the two-beam coupling gain factor with increasing intensity at a grating spacing of ≃1 μm is attributed to a light-induced increase of the effective trap density. The large gain reached at high intensities is applied for the build up of a double phase conjugate mirror with a sub-millisecond switch-on time.     

Anisotropy of the dielectric permittivity of Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> measured with light-induced grating techniques

We apply, for the first time to our knowledge, photorefractive grating spectroscopy to obtain not-yet-known data on the anisotropy of the dielectric permittivity of Sn₂P₂S₆. Two independent techniques are used, one based on measurements of the amplitude of the space-charge field grating as a function of grating spacing and the other based on measurements of the grating decay time, also as a function of grating spacing. Both techniques provide close values for the anisotropy, which appears to be well pronounced, a ratio ε_xx/ε_zz≈4 is revealed for two of the three independent components of the dielectric tensor. Our data also allow us to conclude that the charge mobility is nearly isotropic in the same plane, μ_xx/μ_zz≈1. Received: 2 December 2002 / Published online: 26 March 2003 RID="*" ID="*"Corresponding author. Fax: +380-44/265-2359, E-mail: odoulov@iop.kiev.ua     

Dielectric properties of thin ferroelectric Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> films deposited by thermal evaporation

The structure, microstructure, and temperature and field dependences of the dielectric properties of thin (0.5–8.0μm) Sn₂P₂S₆ ferroelectric films deposited onto glass and aluminum foil substrates by thermal vacuum evaporation in a quasi-closed volume are studied. The film-thickness and frequency dependences of the dielectric properties and the unipolarity of the C–V characteristics are explained by the presence of near-surface Schottky-type barrier layers.     

Optical second harmonic generation and its photoinduced dynamics in ferroelectric semiconductor Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript>

By means of optical pump–probe technique, the ultrafast dynamics of nonlinear optical response of the ferroelectric semiconductor Sn₂P₂S₆ crystal excited with a femtosecond laser pulse has been investigated. It has been shown that, under the action of femtosecond pulses, change in optical second harmonic generation occurs in the sample, which can be due to screening of existing electric polarization.     

Photoinduced gratings in a Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> ferroelectric crystal with the period depending on the optical pump power

The light scattering in the form of ring structures in Sn₂P₂S₆ crystals at the propagation of intense laser pump radiation along the b crystallographic axis is detected. Radiation passing through a crystal is completely scattered into a cone whose angle increases with the pump power and decreases reversibly with a decrease in this power. The observed effect can be attributed to a spontaneous increase in the amplitude of photoinduced bulk diffraction gratings and to the scattering of light on them in the directions where the phase increments of the photorefractive and diffraction natures compensate each other. A similar type of scattering was observed previously in other photorefractive crystals, but the appearance of gratings with the period easily varied by varying the pump power is demonstrated for the first time.     

Band structure of new layered superconductors BaRh<Subscript>2</Subscript>P<Subscript>2</Subscript> and BaIr<Subscript>2</Subscript>P<Subscript>2</Subscript>

The results of ab initio FLAPW-GGA computations of the band structure of two new layered low-temperature superconductors BaRh₂P₂ and BaIr₂P₂ (with a ThCr₂Si₂ tetragonal structure) are presented. As distinct from the family of the isostructural FeAs superconductors, they feature the complete replacement of the magnetic (Fe) metal by the nonmagnetic 4d (Rh) and 5d (Ir) metals. For BaRh₂P₂ and BaIr₂P₂, the energy bands, the distributions of the densities of electronic states, the Fermi surface topology, and the coefficients of the low-temperature electron specific heat and the molar Pauli paramagnetic susceptibility have been determined. An increase in T _C in the BaRh₂P₂ (1 K) → BaIr₂P₂ (2.1 K) transition can assumingly be attributed to the features of their phonon subsystem.     

Polarized optical absorption of MnGa<Subscript>2</Subscript>S<Subscript>4</Subscript> single crystals

Optical absorption of MnGa₂S₄ single crystals is studied at two light polarizations (E ||C and E⊥ C). The polarization splitting of the absorption edge points to a splitting of the valence band of MnGa₂S₄. A contribution to the crystal-field splitting is made by two factors, namely, by a difference in the pseudopotential of cationic sublattice atoms and by tetragonal compression of the lattice along the C axis. A scheme of optical transitions in MnGa₂S₄ in the Brillouin zone center is suggested, according to which the optical transitions Г₃ + Г₄ → Г₁ occur in the polarization E ⊥ C, and the Г₂ → Г₁ transitions occur in the polarization E || C.     

High-temperature heat capacity of stannates Pr<Subscript>2</Subscript>Sn<Subscript>2</Subscript>O<Subscript>7</Subscript> and Nd<Subscript>2</Subscript>Sn<Subscript>2</Subscript>O<Subscript>7</Subscript>

Oxide compounds Pr₂Sn₂O₇ and Nd₂Sn₂O₇ have been obtained by solid-phase synthesis. The effect of temperature on the heat capacity of Pr₂Sn₂O₇ (360–1045 K) and Nd₂Sn₂O₇ (360–1030 K) has been studied using differential scanning calorimetry. The thermodynamic properties of the compounds (changes in enthalpy, entropy, and the reduced Gibbs energy) have been calculated by the experimental data of C_p = f(T).     

Nuclear spin resonance of <Superscript>53</Superscript>Cr in ferromagnetic CuCr<Subscript>2</Subscript>S<Subscript>4</Subscript>: Sb

The influence of variable valence on NSR spectra of ⁵³Cr nuclei in ferromagnetic CuCr_2?xSb_xS₄ (x = 0, 0.02, 0.07) at T = 77 K is considered. For quadrupole nuclei in locally anisotropic positions, the effects of variable valence result in averaging of not only the resonance frequency but also of the quadrupole and magnetic anisotropy constants. The significant difference between the experimental and calculated values of these constants indicates the important role of the intrinsic electronic contribution to the anisotropy of hyperfine fields of compounds containing Cr⁴⁺ ions. Additional lines caused by intrinsic and induced defects in the structure are observed in the spectra of doped and undoped compounds.     

Low-temperature photoluminescence in CuIn<Subscript>5</Subscript>S<Subscript>8</Subscript> single crystals

Photoluminescence (PL) spectra of CuIn₅S₈ single crystals grown by Bridgman method have been studied in the wavelength region of 720–1020 nm and in the temperature range of 10–34 K. A broad PL band centred at 861 nm (1.44 eV) was observed at T = 10 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.5– 60.2 mW cm^?2 range. Radiative transitions from shallow donor level located at 17 meV below the bottom of the conduction band to the acceptor level located at 193 meV above the top of the valence band were suggested to be responsible for the observed PL band. An energy level diagram showing transitions in the band gap of the crystal has been presented.     

Optical phonons in Rb<Subscript>2</Subscript>TeBr<Subscript>6</Subscript> and Cs<Subscript>2</Subscript>TeBr<Subscript>6</Subscript> crystals

Raman scattering in Rb₂TeBr₆ and Cs₂TeBr₆ crystals is studied. The phonon spectra of the crystals are calculated using the factor group method. The number of Raman-active modes, their symmetries, and selection rules are found. Observed Raman spectrum lines are identified with atomic vibration modes of the crystal.     

Photoluminescence of CaGa<Subscript>2</Subscript>S<Subscript>4</Subscript>:Pr Polycrystals

The photoluminescence (PL) and PL excitation spectra of CaGa₂S₄ polycrystals doped with praseodymium are studied in the regions of the activator absorption and the fundamental absorption of the host. It is found that the PL excitation spectrum consists of two regions: broadband absorption in the range of 200-380 nm corresponding to the fundamental absorption of the host and the narrow-band absorption of the dopant in the range of 430–515 nm. The luminescence spectra are different for different excitation wave-lengths, which occurs because Pr³⁺ ions substitute divalent cations occupying different crystallographic positions in the host crystal lattice.     

The Debye temperature and Grüneisen parameter of the CaLa<Subscript>2</Subscript>S<Subscript>4</Subscript>-La<Subscript>2</Subscript>S<Subscript>3</Subscript> system

The thermal expansion coefficient of solid solutions in the CaLa₂S₄-La₂S₃ system at a temperature of 300 K is investigated experimentally. The Debye temperature, the Grüneisen parameter, and the isothermal compressibility coefficient of solid solutions in the system under investigation are determined from the experimental thermal expansion coefficient. It is demonstrated that, upon substitution of calcium ions for cation vacancies in La₂S₃, the Debye temperature decreases, the isothermal compressibility coefficient increases, and the Grüneisen parameter remains constant for all compositions in the CaLa₂S₄-La₂S₃ system. A correlation between the ionic radii of Ca²⁺ and La³⁺, the concentration of cation vacancies, and the rigidity of the lattice, on the one hand, and the Debye temperature, the Grüneisen parameter, and the isothermal compressibility coefficient, on the other, is revealed for the studied samples.     

Structural and magnetic ordering of CrNb<Subscript>3</Subscript>S<Subscript>6</Subscript> single crystals grown by gas transport method

Paramagnetic layered semiconductor NbS₂ doped with some transition metals can transform into ferromagnetic material. That is why such materials are promising candidates for spintronic devices. It is found that only at certain concentrations of a doping metal T crystallographic ordering is possible, which is essential for magnetic ordering of ternary compounds TNbS₂. In particular, CrNb3S6 crystals are studied, which form almost completely ordered superstructure with intercalated Cr between NbS₂ layers. The main difficulty in crystal growth is reaching stoichiometry of the compound. This problem is solved in the developed method of two-staged gas transport chemical reaction. This new approach provides growth of CrNb₃S₆ single crystals of several millimeters in diameter and 0.3–0.5 mm thickness. X-ray phase analysis (XRD) of powders is performed to identify all phases involved in synthesis and growth of the crystals. High frequency absorption in external periodic magnetic field as a function of temperature and intensity of magnetic field is used to estimate the temperature of ferromagnetic transition in CrNb₃S₆ single crystals. The Curie temperature is estimated as 115 K. Growth of CrNb₃S₆ crystals from vapor phase is studied in detail and full analysis of phase transitions during growth is given. It has been shown that using of high frequency absorption in the crystal provides reliable estimation of the point of ferromagnetic transition in this semiconductor. The authors are grateful to the Physical Science Department of Russian Academy of Sciences for financial support of the studies in the frameworks of the program “Physics of new materials and structures” (project no. 00-12-10).     

Impedance spectroscopy study of Pb<Subscript>2</Subscript>P<Subscript>2</Subscript>O<Subscript>7</Subscript> compound

The lead pyrophosphate, Pb₂P₂O₇, compound was prepared by conventional solid-state reaction and identified by X-ray powder diffractometer. Pb₂P₂O₇ has a triclinic structure whose electrical properties were studied using impedance spectroscopy technique. Both impedance and modulus analysis exhibit the grain and grain boundary contribution to the electrical response of the sample. The temperature dependence of the bulk and grain boundary conductivity were found to obey the Arrhenius law with activation energies E _g = 0.66 eV and E _gb = 0.67 eV, respectively. The scaling behavior of the imaginary part of the complex impedance suggests that the relaxation describes the same mechanism at various temperatures.     

High-frequency tunable EPR spectroscopy of non-Kramers ions in AgGaSe<Subscript>2</Subscript>: Cr,AgGaS<Subscript>2</Subscript>: Cr,and CdGa<Subscript>2</Subscript>S<Subscript>4</Subscript>: Cr crystals

Crystals of the chalcopyrite family, AgGaSe₂, AgGaS₂, and CdGa₂S₄, doped with chromium ions have been investigated using high-frequency broad-band EPR spectroscopy in the range 65–530 GHz at T = 4.2 K. It has been revealed that, in the AgGaSe₂ and AgGaS₂ crystals, the Cr²⁺ ions occupy positions with orthorhombic and tetragonal symmetry, whereas the previously investigated CdGaS₄ crystals contain only tetragonal centers. The observed spectra have been described in the framework of the spin-Hamiltonian formalism. Apart from the divalent chromium centers, the EPR lines attributed to non-Kramers ions are observed in the frequency range 300–450 GHz for all the crystals under investigation. The nature of these lines has been discussed.     

The Optical Gain of a Si-Based Lattice-Matched Si<Subscript>0.15</Subscript>Ge<Subscript>0.621</Subscript>Sn<Subscript>0.229</Subscript>/Si<Subscript>0.637</Subscript>Ge<Subscript>0.018</Subscript>Sn<Subscript>0.345</Subscript> MQW Laser

We study the optical-gain characteristics of a Si-based MQW laser, in which the active region has 20 Si_0.15Ge_0.621Sn_0.229 quantum wells separated by 20 Si_0.637Ge_0.018Sn_0.345 barriers. We reach a maximum optical gain of 2300 cm^?1 with an estimated carrier concentration of 5·10¹⁸ cm^?3, which is equivalent to the transparent current density equal to 0.5 kA/cm². Furthermore, we discuss the optical confinement factor and modal gain. The modal gain depends sensitively on the number of the quantum wells (QWs), and this fact restricts the optical confinement factor. The modal gain of the model we proposed can reach 1500 cm^?1 at the injection current density equal to 3 kA/cm². We hope that our results show the possibility to obtain a Si-based near-infrared laser.