用于减小同步开关嗓声的OCD输出驱动电路的设计

分析了同步开关噪声产生的机理,从电路设计技术角度讨论了输出驱动器电路的设计方法,提出了一种用于改善输出驱动电路同步开关噪声性能的ＯＣＤ输出驱动电路的设计,并给出了实际的ＯＣＤ电路。     

驱动简单倍频器的三角波

如果您使用函数发生器,您也许偶尔会需要比发生器提供的频率还要高的频率下实现正弦波输出.如果您的函数发生器还能产生三角波输出,那么您可以用倍频器把发生器的可用频率扩展一倍.以前出版的设计实例介绍了一种三角波驱动的倍频电路,它采用的运算放大器可产生限制在大约20kHz的输出频率(参考文献1).     

电流模式BUCK型驱动电路斜率补偿研究

介绍了电流模式开关电源的原理和特点。针对电流模式下会引起振荡的现象,分析了系统不稳定的原因,论述了占空比、电感平均电流与系统不稳定之间的关系。并论述了通过斜率补偿解决系统振荡的基本原理。设计了一款基于max16834驱动芯片的高边降压型电路,给出了斜率补偿设计实例。实验结果表明,斜率补偿增强了系统的抗干扰性并提高了系统的稳定性。     

用于减小同步开关噪声的OCD输出驱动电路的设计

分析了同步开关噪声产生的机理,从电路设计技术角度讨论了输出驱动器电路的设计方法,提出了一种用于改善输出驱动电路同步开关噪声性能的OCD输出驱动电路的设计,并给出了实际的OCD电路。     

适用于多种降压器的新型LED驱动电路

本文介绍了适用于2种或者3种降压器的LED驱动电路,可以有效解决传统LED驱动电路在市电电压变化时LED电流变化过大的影响,便于设定输出电流,并且可以解决电流变化带来的LED灯闪烁的问题.     

一种新型高频感应加热用驱动电路

对于感应加热电源来说,在高频时对逆变器开关管损耗的控制比低频时更为严格,对其上升沿、下降沿的时间也要有更精确的控制,一个好的驱动电路可以很好的减小开关管的开关损耗。文中介绍了一种电流型高频感应加热电源用MOSHFET驱动电路,它结合IXDD414CI芯片进行设计,结构十分简单,工作频率高,时延很小,可靠性好。给出了驱动电路应用于200kHz／50kW电流型逆变器的实验结果,证明这个驱动电路运行状况良好,实用性强。     

一种适于低压高频DC-DC的自举BiCMOS驱动电路

本文给出一种适用于低电压高开关频率升压型DC-DC转换器的BiCMOS驱动电路。该驱动电路采用自举升压技术，工作电压最低可达1．5V，在负载电容为60pF条件下，工作频率高达5MHz。文章详细的介绍了此驱动电路的设计思想，并且给出了最终设计电路。     

简单、高效且廉价的定功率驱动器设计

执行和感应系统有时候包含了电阻性负载,且不管电阻值为何,皆需要一个可控制且定功率的驱动。如果电阻值随着操作情况改变,且可能也会随着最近操作纪录做更改,那么简单的供给电压或电流控制和稳定便不足以确保定功率的输出。图1的电路     

简易的LED驱动电路

发光二极管（LED）正逐渐成为广泛运用的照明解决方案,然而,不同的LED需要不同的偏压点才能达到相同的亮度,因此．想要以电压源驱动LED来达到RGBLED应用的亮度和色彩．就变得十分困难。为了解决这个的问题,许多IC都特别设计成利用恒定电流来驱动LED,但是这些IC都需要透过微处理器进行程序设计。下文说明在无须微处理器控制的器的情况下,如何使用恒定电流LED驱动器。     

中小屏幕TFT-LCD驱动芯片的输出缓冲电路

在分析中小屏幕TFT-LCD驱动芯片的负荷特性的基础上,提出了一种新型的驱动电压输出缓冲电路结构.通过负反馈动态控制输出级的工作状态,具有交替提供拉电流和灌电流的驱动能力,可有效抑制输出电压的波动.与传统的两级运算放大器电路相比,该电路结构简单,稳定性能好,降低了静态功耗并节省了芯片面积.采用0.25μm CMOS工艺设计并实现了两种不同输出电压的缓冲电路.HSPICE仿真结果表明,输出电压缓冲电路的静态电流为3μA,Offset电压小于±2mV.同时,当TFT-LCD的驱动电压在-8～+16V之间切换时,输出电压的波动范围小于±0.4V,输出电压的恢复时间小于7μs.经对工程样片的测试知,其性能完全满足中小屏幕TFT-LCD驱动控制芯片的要求.     

新型微波晶体管

本文介绍了调制掺杂晶体管、电子有效质量调制晶体管和电子截断波长晶体管的原理、结构和发展动态,并简述了其发展前景。     

双极晶体管的进步

尽管MOSFET已经成为众多电源管理设计者默认的选择,但是双极晶体管也一直是媒体关注的焦点,并且在某些电源开关应用中是更好的选择.近几年来,双极晶体管发展很快,并经历了几代技术上的进步.如图1所示. 本文首先综述当前双极晶体管的特性,然后说明它们不可或缺的优越性如何在实际中得到应用.     

Scaling of Nanowire Transistors

This paper considers the scaling of nanowire transistors to 10-nm gate lengths and below. The 2-D scale length theory for a cylindrical surrounding-gate MOSFET is reviewed first, yielding a general guideline between the gate length and the nanowire size for acceptable short-channel effects. Quantum confinement of electrons in the nanowire is discussed next. It gives rise to a ground-state energy and, therefore, a threshold voltage dependent on the radius of the nanowire. The scaling limit of nanowire transistors hinges on how precise the nanowire size can be controlled. The performance limit of a nanowire transistor is then assessed by applying a ballistic current model. Key issues such as the density of states of the nanowire material are discussed. Comparisons are made between the model results and the published experimental data of nanowire devices.      

Graphene Nanoribbon Tunnel Transistors

A graphene nanoribbon (GNR) tunnel field-effect transistor (TFET) is proposed and modeled analytically. Ribbon widths between 3 and 10 nm are considered to effect energy bandgaps in the range of 0.46 to 0.14 eV. It is shown that a 5-nm ribbon width TFET can switch from on to off with only 0.1-V gate swing. The transistor achieves 800 $muhbox{A}/muhbox{m}$ on -state current and 26 $hbox{pA}/muhbox{m}$ off-state current, with an effective subthreshold swing of 0.19 mV/dec. Compared to a projected 2009 $n$MOSFET, the GNR TFET can provide 5$times$ higher speed, 20$ times$ lower dynamic power, and 280 000$times$ lower off-state power dissipation. The high performance of GNR TFETs results from their narrow bandgaps and their 1-D nature.      

Solid-State Electrochemical Thermal Transistors

Thermal transistors that electrically control heat flow have attracted growing attention as thermal management devices and phonon logic circuits. Although several thermal transistors are demonstrated, the use of liquid electrolytes may limit the application from the viewpoint of reliability or liquid leakage. Herein, a solid-state thermal transistor that can electrochemically control the heat flow with an on-to-off ratio of the thermal conductivity (κ) of ≈4 without using any liquid is demonstrated. The thermal transistor is a multilayer film composed of an upper electrode, strontium cobaltite (SrCoO_x), solid electrolyte, and bottom electrode. An electrochemical redox treatment at 280 °C in air repeatedly modulates the crystal structure and κ of the SrCoO_x layer. The fully oxidized perovskite-structured SrCoO₃ layer shows a high κ ≈3 .8 W m⁻¹ K⁻¹, whereas the fully reduced defect perovskite-structured SrCoO₂ layer shows a low κ ≈ 0.95 W m⁻¹ K⁻¹. The present solid-state electrochemical thermal transistor may become next-generation devices toward future thermal management technology.     

Microwave ZnO Thin-Film Transistors

We have developed ZnO thin-film transistor design and fabrication techniques to demonstrate microwave frequency operation with 2-$muhbox{m}$ gate length devices produced on GaAs substrates. Using $hbox{SiO}_{2}$ gate insulator and pulsed laser deposited ZnO active layers, a drain–current on/off ratio of $hbox{10}^{12}$, a drain–current density of 400 mA/mm, a field-effect mobility of $hbox{110} hbox{cm}^{2}!/ hbox{V}!cdothbox{s}$, and a subthreshold gate voltage swing of 109 mV/dec were achieved. Devices with Ti-gate metal had current and power gain cutoff frequencies of 500 and 400 MHz, respectively.      

ZnO Nanowire Field-Effect Transistors

Owing to the extraordinary properties and prominent applications in emerging nanoelectronics, ZnO nanowire has attracted tremendous research effort. This paper provides an introductory overview, covering topics ranging from basic nanowire synthesis and fundamental electrical properties to device characteristics based on field-effect transistor configuration.      

晶体管的新概念

简要介绍了几种晶体管,包括柔性晶体管、单原子晶体管、单电子晶体管、单自旋晶体管、量子力学晶体管、谐振隧穿晶体管、薄膜晶体管、透明晶体管和纳米晶体管的新概念。