PN结正向压降温度特性的研究和应用

分析了ＰＮ结正向压降的温度特性,并通过对硅材料二极管的测定,使学生对ＰＮ结温度传感器有所了解。     

应用计算机测定PN结正向压降的温度特性

采用电热法把待测的PN结放置于温度可连续变化的热源中,利用精确的温度传感器进行温度测量,并利用计算机数据采集技术,直观地再现了PN结正向压降随温度线性变化的整个物理过程,提高了测量的精度.     

不同温度下PN结伏安特性自动测试系统的设计与实验

为培养学生的思维能力,开发了不同温度下PN结伏安特性自动测试系统的设计与实验.实验以PN结为测试对象,通过测试热敏电阻的温度特性,在自动检测系统中并以其为热探头设计了满足特定要求的温度传感器.     

PN结正向压降与温度关系实验的讨论

本文研究了PN结正向电压与温度关系实验中升温和降温、不同的升温速度对PN结正向电压的影响,实验发现：降温测量的不确定度小于升温测量结果.     

半电体PN结电压—温度特性的实验研究

本文通过实验测量和描绘了４种硅管和２种锗管ＰＮ结的电压—温度特性曲线,用最小二乘法求解了电压温度系数和禁带宽度,并分析了结电压与温度的相关性,证实结电压与温度密切相关。     

用计算机测量PN结的反向物理特性

本对PN结反向物理特性,应用电子技术和计算机技术实现了对实验过程的控制和效据处理。     

低温下低掺杂硅P—N结正向伏安特性的异常现象

实验观察到低温下低掺杂硅 P-N 结的异常现象.在14—25K 的温区里,出现正向伏安特性曲线交叉、击穿电压峰以及当正向注入电流恒定时正向电压随温度变化特性呈现非单调性.对异常现象作了讨论,提出低温下“热”载流子的存在引起杂质碰撞电离可能是产生这些现象的原因.     

PN结对交流信号相位的影响(续)

当1个交流小信号被1个PN结和1个大电容分压,且该电容的电容值远大于PN结电容时,大电容两端的电压与PN结电容成正比,该信号的相位与PN结的电阻以及信号的频率有关.把PN结当作1个电容和1个电阻并联,可定性解释该信号的相位与PN结正向电阻、与加在PN结两端的直流反向偏压、在零直流偏压下与交流信号频率的关系.     

PN结对交流信号相位的影响

交流小信号被PN结和电容分压，且电容值远远大于PN结电容值时，大电容两端的电压是很小的交变电压，该信号的相位与PN结的内阻(正向)有关．把PN结当做一个电容和一个电阻并联，可定性解释这种关系．     

Origin of anomalous enhancement of the absorption coefficient in a PN junction

The absorption coefficient is usually considered as a constant for certain materials at the given wavelength. However,recent experiments demonstrated that the absorption coefficient could be enhanced a lot by the PN junction. The absorption coefficient varies with the thickness of the intrinsic layer in a PIN structure. Here, we interpret the anomalous absorption coefficient from the competition between recombination and drift for non-equilibrium carriers. Based on the Fokker–Planck theory, a non-equilibrium statistical model that describes the relationship between absorption coefficient and material thickness has been proposed. It could predict the experimental data well. Our results can give new ideas to design photoelectric devices.     

InGaN基白光LED光谱特征和结温相关性研究

 以InGaN蓝光+荧光粉的白光LED为研究对象,在恒定环境温度下改变驱动电流,利用光谱仪测得不同LED结温下的光谱曲线。通过分析实验数据,得出光谱特征与该型LED结温的关系。结果表明：InGaN基白光LED蓝光和荧光的峰值波长与结温没有明显的线性关系;蓝光的光谱线宽以及荧光和蓝光峰值强度的比值与结温具有良好的线性关系。     

Temperature-dependent characteristics of 4H-SiC junction barrier Schottky diodes

The current-voltage characteristics of 4H-SiC junction barrier Schottky(JBS) diodes terminated by an offset field plate have been measured in the temperature range of 25-300 C.An experimental barrier height value of about 0.5 eV is obtained for the Ti/4H-SiC JBS diodes at room temperature.A decrease in the experimental barrier height and an increase in the ideality factor with decreasing temperature are shown.Reverse recovery testing also shows the temperature dependence of the peak recovery current density and the reverse recovery time.Finally,a discussion of reducing the reverse recovery time is presented.     

Temperature-dependent characteristics of 4Hben SiC junction barrier Schottky diodes

The current-voltage characteristics of 4H-SiC junction barrier Schottky (JBS) diodes terminated by an offset field plate have been measured in the temperature range of 25-300 ℃. An experimental barrier height value of about 0.5 eV is obtained for the Ti/4H-SiC JBS diodes at room temperature. A decrease in the experimental barrier height and an increase in the ideality factor with decreasing temperature are shown. Reverse recovery testing also shows the temperature dependence of the peak recovery current density and the reverse recovery time. Finally, a discussion of reducing the reverse recovery time is presented.     

MATLAB拟合工具箱在PN结物理特性综合实验中的应用

介绍了PN结物理特性综合实验原理,利用绘图软件Matlab对实验数据进行曲线拟合,得到了PN结伏安特性函数表达式和PN结正向压降与温度间关系的拟合曲线,计算了常温下玻尔兹曼常数和PN结温度传感器灵敏度及T=0 K时的半导体近似禁带宽度。