Large-size and high-quality Zn2TiO4 single crystal grown by the optical floating zone method

Crack-free and transparent Zn₂TiO₄ single crystals of 4–6 mm in diameter and 30 mm in length have been grown by the optical floating zone method. The powder X-ray diffraction (XRD) results show that the as-grown crystals have the spinel-type Zn₂TiO₄ structure. XRD² measurements on Zn₂TiO₄ wafers cut perpendicular to the growth direction display only one peak at 42.7°, which indicates that the Zn₂TiO₄ single crystals grow along the 〈4 0 0〉 direction (a-axis). The formation of bubble inclusions was effectively suppressed by lowering rotation rate. Transmission polarized-light microscopy results showed that as-grown crystals were free of low angle grain boundaries.     

Effect of the number of defect density waves on the dynamics of the soliton system in [N(CH3)4]2CuCl4 and [N(CH3)4]2Zn0.98Ni0.02Cl4 crystals

The time dependences of the birefringence and thermal conductivity of [N(CH₃)₄]₂CuCl₄ and [N(CH₃)₄]₂Zn_0.98Ni_0.02Cl₄ crystals in the incommensurate phase at a constant temperature have been studied. A multiwave state of modulated superstructure is found to be formed in the presence of defect density waves in the crystal. It is shown that, depending on the number of defect density waves in the crystal, either a superposition of existing modulation waves or a domainlike structure arise in it.     

Single crystals growth and absorption spectra of Cr-doped Al2−xInx(WO4)3 solid solutions

The growth conditions of pure and Cr³⁺-doped Al_2−xIn_x(WO₄)₃ single crystals, using top-seeded solution growth (TSSG) technique, have been studied. A series of experiments have been performed at different In concentrations, x=0.0, 0.3, 0.6 and 1.0, as well as at different concentrations of Cr³⁺ (0.0, 0.1, 0.2, 0.5 and 1.0) in at% with respect to the initial total concentration of Al and In in the starting solutions. The basic parameters of the crystal growth are varied over a wide range: seed orientation, speed of rotation, axial and radial temperature differences in the solution and the solution cooling rate. The investigated relations between the basic defects in the crystals and these parameters result in determination of the optimal conditions for growth of defect-free crystals. Distribution coefficients of Al, In and Cr have been determined, so the growth of crystals with given compositions is possible. Values of Dq/B (crystal field strength) for the various crystal compositions are calculated from the optical absorption spectra. The calculated values show that the discussed solid solutions have weak crystal field and are suitable for media with broadband emission spectra.     

Flux growth and characterizations of NdPO4 single crystals

Neodymium phosphate single crystals, NdPO₄, have been grown by a flux growth method using Li₂CO₃-2MoO₃ as a flux. The as-grown crystals were characterized by X-ray powder diffraction(XRPD), differential thermal analysis (DTA) and thermogravimetric analysis (TG) techniques. The results show that the as-grown crystals were well crystallized. The crystal was stable over the temperature range from 26 to 1200 °C in N₂. The specific heat of NdPO₄ crystal at room temperature was 0.41 J/g °C. The absorption and the fluorescence spectra of NdPO₄ crystal were also measured at room temperature.     

Temperature gradient controlled growth and optical properties of Er:BaY2F8 crystals

Single crystals of Erbium (Er) doped BaY₂F₈ have been obtained by the temperature gradient technique (TGT). No‐seed‐grown crystal of Er:BaY₂F₈, with the dimensions up to several centimeters, was obtained by self‐crystallization. The optimizations of various growth parameters were systemically investigated. The results indicated that the temperature gradient of 6‐7 K/mm and the cooling velocity less than 6 K/h were suitable for the crystal growth. The XRD data and the investigations on the growth striations by a stereo polarization microscope displayed that the [001] direction is the dominating direction for the crystal growth. The crystal grown by TGT often cracks along with the (100) plane, which is caused by the excessive decrease of the temperature during the crystal growth, for there is a rapid change in the thermal expansion curve of the BaY₂F₈ crystal in the temperature range from 800 °C to 900 °C. The spectral properties of Er:BaY₂F₈ single crystals have been studied and the effects of frequency up‐conversion of the crystals are reported. Spectral data suggest that the quality of Er:BaY₂F₈ crystal obtained by TGT method is good and the crystal has the potential application in laser devices. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effective electro‐optic coefficient of (1–x)Pb(Zn1/3Nb2/3)O3–xPbTiO3 single crystals

Refractive indices and effective electro‐optic coefficient γ_c of (1–x)Pb(Zn_1/3Nb_2/3)O₃–xPbTiO₃ (PZN‐xPT, x = 0.05, 0.09 and 0.12) single crystals were measured at 532 nm wavelength. Orientation and temperature dependences of the electro‐optic coefficient were investigated. Large electro‐optic coefficient (γ_c = 470 pm/V) was observed in [001]‐poled PZN‐0.09PT crystal. More importantly, γ_c of tetragonal PZN‐0.12PT is almost unchanged in a temperature range −20 ∼ 80 °C. The γ_c of PZN‐xPT single crystals are much higher than that of widely used electro‐optic crystal LiNbO₃ (γ_c = 20 pm/V). These results show that PZN‐xPT single crystals are very promising materials for electro‐optic modulators in optical communications.     

Growth of dysprosium garnet single crystals with spiral shape using Czochralski technique

The growth conditions of dysprosium garnets single crystals, to obtain a long and good spiral shape crystal, have been investigated using the conventional Czochralski technique along the [111] pulling direction. The good spiral shape of Dy₃Ga₅O₁₂ single crystal with 40 mm in length is grown with its spiral pitch and spiral diameter of 20 mm and 15 mm, respectively.     

Growth and property of Zn-doped near-stoichiometric LiTaO3 crystal

Near-stoichiometric LiTaO₃ (SLT) and Zn-doped near-stoichiometric LiTaO₃ (Zn:SLT) crystals with 10–15 mm in diameter and 10 mm in length were grown by using TSSG technique with K₂O as the flux. The effect of adding amount of K₂O was discussed in the growing process. The crystals were characterized by inductively coupled plasma-optical emission (ICP-OES), X-ray diffraction (XRD) and differential thermal analysis (DTA). The lattice constants of Zn:SLT were smaller than those of SLT and Curie temperature was higher than that of SLT. It was found that Zn doping is an efficient way to improve the optical damage resistance ability of SLT crystal. Compared with SLT crystal, Zn:SLT exhibited a much higher optical damage threshold, more than 500 MW/cm², which was attributed to Zn self-compensated effect that formed the charge compensated complexes, (Zn_Ta)³⁻–3(Zn_Li)⁺ in SLT crystal.     

Flux growth and low temperature dielectric relaxation in piezoelectric Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 single crystals

Single crystals of Pb[(Zn_1/3Nb_2/3)_0.91Ti_0.09]O₃ (PZNT 91/9) have been grown by flux method after modifications in temperature profile, flux ratio and addition of excess ZnO/B₂O₃ which resulted in enhanced perovskite yield (more than 95%). Only a few crystals showed the presence of pyrochlore phase/variation in composition. A comparative characterization of these crystals were carried out in respect of piezoelectric charge coefficient d₃₃, dielectric constant, ac conductivity and hysteresis loop after cutting and poling the crystals along [001] direction. The total activation energy for conduction has been found to increase with Ti‐content in the sample. The effect of ZnO on growth behavior has been analyzed. A detailed analysis of PZNT (91:9) has been carried out at low temperature in respect of the various thermodynamic parameters related to the dielectric relaxation mechanism, like optical dielectric constant, static dielectric constant, free energy of activation for dipole relaxation, enthalpy of activation and relaxation time, have been calculated in the vicinity of transition temperature in the lower temperature region. The activation energy for relaxation at ‐10 and ‐49 °C have been found to be 0.09 and 0.02 eV respectively. The results were analyzed and a detailed dielectric analysis and low temperature relaxation behavior of PZNT crystals were interpreted. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Edge-Defined Film-Fed (EFG) Growth of Rare-Earth Orthovanadates REVO4 (RE=Y,Gd): Approaches to Attain High-Quality Shaped Growth

In spite of their superior laser and polarizer properties rare-earth orthovanadates (REVO₄) single crystals have not been adopted yet into extensive industrial applications because of crystal growth difficulties. The main problems of CZ technique are compositional change and diameter instability. This work presents the first attempt to apply the edge-defined film-fed growth (EFG) technique by which well-shaped REVO₄crystals have been grown directly. The capillary properties of YVO₄ and GdVO₄ melt have been measured. The applicability of shaped growth for rare-earth orthovanadate family was approved by successful EFG growth of transparent rod-like macro-defect-free single crystals of YVO₄ and GdVO₄. We address two main approaches to enhance the quality of EFG crystals: (i) meniscus and crystal shape stability dependence on die top shape and (ii) the strategy of effective operating control. Concave die top was found to be the best choice for high-quality EFG growth of REVO₄ along [001] direction. The spectral analysis of weight signal from growing crystal was shown to be a useful feedforward clue to prevent crystallinity degradation at a very early stage. A reasonable stability of the EFG process was achieved using [211], [101], [001] and [100] pulling directions.     

Lu5Ir4Si10 whiskers: Morphology,crystal structure,superconducting and charge density wave transition studies

Highly perfect single crystal whiskers of Lu₅Ir₄Si₁₀ were successfully grown out of the melt. Details of the surface and morphology of the whiskers are presented. X-ray diffraction data confirmed that the whisker structure has the same tetragonal P4/mbm space group symmetry as bulk single crystals with lattice parameters a=12.484(1) and c=4.190(2) Å. By means of field emission scanning electron microscopy, the morphology of the whiskers has been studied. Using a 4-circle X-ray diffractometer we found that whiskers grow along the c-axis direction and all side faces are oriented along the [1 1 0] direction. The mosaicity has been measured and is found to be almost perfect: below 0.15° along the c-axis. According to our transport measurements performed along the c-axis, the whiskers present a sharp superconducting transition at T_c=4.1 K and show a charge density wave (CDW) transition at 77 K. From the hysteresis of the temperature dependance of the electrical resistivity study, the CDW transition is found to be of first order.     

Physical properties of self-flux and WO3-containing solutions useful for growing type III KGd(PO3)4 single crystals

Density, surface tension and dynamic viscosity of self-flux and WO₃-containing solutions useful for growing type III KGd(PO₃)₄ single crystals have been measured at temperature near the saturation temperature. The thermal behavior of these physical properties has also been studied. Solutions containing WO₃ show a higher density than self-flux solutions and the density decreases linearly when the temperature increases, in the two cases. Near the saturation temperature, self-flux solutions present a surface tension slightly lower than that of WO₃-containing solutions. The dynamic viscosity of WO₃-containing solutions is slightly lower than that of self-flux solutions when this property was measured at the same temperature. We observed that, in WO₃-containing solutions, the saturation temperature is lower than in self-flux solutions. Thus, at the growth temperatures, the two solutions present dynamic viscosities only slightly different, so we expect that the introduction of WO₃ up to 10 mol% in the growth solution does not represent any important improvement in its hydrodynamics and this small change does not compensate for the possibility of introduction of tungsten impurities in the crystal structure affecting the physical properties expected for these crystals. Taking into account the values measured for these physical properties, we choose the initial conditions for growing type III KGd(PO₃)₄ single crystals from self-flux solutions.     

Specific features of the phase formation,synthesis, and growth of ZnMoO4 crystals

The ZnO-MoO₃ phase diagram in the range of ZnO compositions from 0.95 to 1.05 mol % is refined by differential scanning calorimetry. Data on crystal stoichiometry are obtained using the weighting method by reducing ZnMoO₄ in a hydrogen atmosphere. The specific features of solid-phase synthesis of ZnMoO₄ are studied, and its heat of fusion is measured. The modes of solid-phase synthesis and growth of ZnMoO₄ crystals are optimized. Some experimental data on the ZnMoO₄ crystal growth in the [001] direction by the low-thermal gradient Czochralski method are presented. Crystals with a cross section of ～50 × 50 mm², a length of 160 mm, and a weight up to 1 kg have been obtained.     

Growth of BPO4 single crystals from Li2Mo3O10 flux

Transparent single crystal of BPO₄ with a typical sizes of 5 × 7 × 9 mm³ have been grown by the top-seeded solution growth (TSSG) slow-cooling method using Li₂Mo₃O₁₀ as the flux. X-ray powder diffraction result shows that the as-grown crystal was well crystallized and indexed in a tetragonal system. The processing parameters and the effects of the flux on the crystal growth were investigated.     

Crystal structure of bis[diethylenetriamine-N′-(3-propionato)-N, N′,N″,O,O′]dicopper(II) Diperchlorate, [Cu2(4-Dtmp)2](ClO4)2

A complex of copper(II) with the diethylenetriaminemonopripionate ligand [Cu₂(4-Dtmp)₂](ClO₄)₂ (I) is synthesized and characterized using X-ray diffraction. The crystals of compound I are monoclinic, a = 7.740(2) Å, b = 19.199(3) Å, c = 8.449(2) Å, β = 91.61(2)°, Z = 2, and space group P2₁/n. The structural units of crystal I are centrosymmetric dimeric cations and statistically disordered ClO ₄ ⁻ anions. In the cation, the copper atom is coordinated by three N atoms [mean Cu-N, 2.01(1) Å] and two O atoms [Cu-O, 2.134(6) Å and 1.958(7) Å] of the pentadentate bridging-chelate Dtmp ligand, which occupy vertices of the trigonal bipyramid. The binuclear cations are linked via centrosymmetric pairs of hydrogen bonds into ribbons aligned parallel to the a axis of the crystal. The ClO ₄ ⁻ anions form columns in the same direction. In the crystal, the cationic ribbons and anionic columns alternate in a chessboard fashion. __________ Translated from Kristallografiya, Vol. 50, No. 3, 2005, pp. 450–454. Original Russian Text Copyright ? 2005 by Antsyshkina, Sadikov, Poznyak, Sergienko.     

Growth and characterization of ferromagnetic shape memory alloy Co50Ni20FeGa29 single crystals

Single crystals of Co₅₀Ni₂₀FeGa₂₉ with B2 phase have been obtained in a deep supercooling condition. The interface-facets and the segregation effect lead to the formation of ordered defects that store a directional internal stress. These defects give to a large energy barrier that leads to a very sharp martensitic transformation within a temperature window of only 2 K. The single crystals show good shape memory effect and superelasticity, which are anisotropic between the growth direction [0 0 1] and its equivalent direction [0 1 0]. The anisotropic behaviors are attributed to the directional internal stress caused by the ordered defects.     

Growth and dielectric properties of Ta2O5 single crystal by the floating zone method

Large Ta₂O₅ single crystal with high‐dielectric permittivity was successfully grown by floating zone (FZ) method under air atmosphere. The grown crystal that has been obtained was typically about 8 mm in diameter and 90 mm in length. The crystal growth parameters were optimized. The crystal symmetry, characterized by means of X‐ray diffraction (XRD), was found to be tetragonal. The relative permittivity and loss tangent along growth and [001] direction were measured in the temperature range between ‐200 °C and 200 °C, which showed a strong dielectric anisotropy. At a frequency of 1 MHz and 20 °C, the dielectric permittivity along the growth direction and [001] direction are 81.17 and 25.04 respectively. The stabilization of high‐temperature phase can explain the dielectric enhancement.     

Reduction of grown-in dislocation density in Ge Czochralski-grown from the B2O3-partially-covered melt

Germanium (Ge) single crystals with an extremely low density of grown-in dislocations were grown by the Czochralski (CZ) technique with boron oxide (B₂O₃) liquid. Because attachment of particles floating on the melt surface to a growing Ge crystal leads to generation of dislocations during the growth, partial covering of the Ge melt surface with B₂O₃ liquid was attempted. Such attachment of particles was drastically suppressed or the particles were caught by the introduction of B₂O₃ liquid, and a particle-free Ge melt was realized in the central region of the melt surface. Ge single crystals were successfully grown from such melt, the grown-in dislocation density being 0–1×10³ cm⁻², which was remarkably lower than that in Ge crystals grown by a conventional CZ technique. The contaminations by B and O atoms of the grown crystal detected by SIMS analysis were very low. These Ge crystals have the potential for application to be applied as high-quality, dislocation-free substrates of GaAs solar cells for various usages including in space.     

Flux growth and morphology analysis of Na3VO2B6O11 crystals

Colorless and transparent Na₃VO₂B₆O₁₁ (NVB) crystal has been grown by the top seeded solution growth method using NaVO₃ as the flux at cooling rates of 0.8–1.5 °C/day, in the temperature range 610–650 °C. A well-developed morphology of the crystals was observed and analyzed. The grown crystals were characterized by powder X-ray diffraction (PXRD), infrared spectroscopy and second harmonic generation (SHG) test.     

Hydrodynamic conditions for growth of large KDP crystals

Three-dimensional mass transfer is simulated. The factors determining the hydrodynamic conditions for efficient mass transfer in growth of large KDP single crystals (cross sections up to 45 × 45 cm²) from solutions in a real 300-l-crystallizer are established. The conditions for the motion of the supersaturated solution to the surface of a growing crystal in the direction opposite to that of gravitation are attained. The growth mode developed provides growth rates that are five times higher of large high-quality optical KDP crystals.