Temperature dependence of ESR anisotropy in La7/8Sr1/8MnO3

We report X-ray diffraction, DC-susceptibility, electron spin resonance (ESR), and dilatometry measurements carried out on an La_7/8Sr_1/8MnO₃ single crystal. Thermal expansion was measured along different crystallographic axes using a three-terminal dilatometer. The sharp anomalies observed in the temperature dependence of Δl/l allowed us to locate the Jahn–Teller transition at T_JT=285(1) K. ESR experiments were carried out in the paramagnetic regime from 220 to 570 K, at 9.4 GHz. We measured the ESR line width ΔH_pp(T) with the magnetic field parallel to the crystallographic directions [1 0 0] and [0 0 1], referred to the orthorhombic (Pbnm) axes. We correlate the temperature dependence of ΔH_pp with the structural changes of the lattice.     

The particle emitter size dependence on energy in ee annihilations into hadrons

The nearly energy independent hadron emitter dimension r, measured in e⁺e⁻ annihilation in the energy range 10 to 91 GeV via the Bose–Einstein correlation of two identical charged pions, is shown to be well accounted for by choosing the hadron jets as independent pion sources. To this end the known normalised factorial cumulant moments dependence on particle sources is adapted to the Bose–Einstein correlation formalism to yield a relation between r and these sources. This approach is also able to account for the measured r values obtained for the Z⁰ decays into two and three hadron jets. Finally the estimated r value of the hadronic (9.46) decay via three gluons is expected to be higher by about 6 to 11% over that predicted for its one photon hadronic decay mode.     

ZnS:Ag的ESR及结构相变研究

ESR实验表明Ag在ZnS微晶中是以Ag⁺离子的形式存在,没有测到Ag²⁺离子的信号.以Mn²⁺为探针的ESR和X射线衍射分析研究发现,在ZnS微晶由立方点阵(β相)变为六角点阵(α相)的结构相变中,Ag⁺离子对相变的影响与掺杂浓度和煅烧温度有关,当掺Ag量为5×10^-4g/g时相变在1100~1200℃出现逆转现象.由Mn²⁺的ESR谱得出α相的朗德因子g为2.006,越精细常数a为6.76mT,β相的g为2.002,a为6.81mT.     

ESR of double-perovskite Sr2FeMoO6

We present an ESR study of Sr₂FeMoO₆ in the paramagnetic region. A single line at g≈2 was associated with Fe³⁺ ions. The intensity follows Curie–Weiss law in the whole T range. For T >500 K a secondary line is attributed to ferromagnetic (FM) impurities. The line width is described by ΔH_pp(T)=ΔH_pp(∞)(1−Θ/T) with a high value for ΔH_pp(∞). The absence of narrowing effects is a signature of double-exchange (DE) interactions and indicates that DE drives the FM ordering at a relatively high T_c.     

Uncertainties in measured and modelled asymmetry parameters of mineral dust aerosols

The error caused by the uncertainty in the refractive index in the determination of the asymmetry parameter g is studied for a variety of mineral dust aerosol samples at two different optical wavelengths. Lorenz–Mie computations for spherical model particles are compared with results based on laboratory-measured phase functions in conjunction with a commonly used extrapolation method. The difference between the g-value based on measurements and the g-value based on Lorenz–Mie simulations is generally on the same order of magnitude as the error caused by the uncertainty in the refractive index m. For larger effective radii the error in g related to the use of spherical model particles is even larger than that related to the uncertainty in m. This indicates that the use of spherical model particles can be among the major error sources in the determination of the asymmetry parameter of dust aerosols.     

Optically stimulated luminescence (OSL) study of synthetic stishovite

Optically stimulated luminescence (OSL) of synthetic stishovite was investigated for a future dating technique of meteor impact craters. Luminescence around 330 nm was measured on the γ-ray irradiated stishovite under two stimulating light sources of infrared laser (830 nm) and blue light emitting diode set (470 nm). Thermoluminescence (TL) studies before and after the OSL measurements showed the intensities around 100–200°C and 220–350°C to increase and those around 350–450°C to decrease. This indicates that a part of deep-trapped charges excited during the OSL measurements were retrapped by shallower traps. The infrared stimulated luminescence (IRSL) after the TL measurement up to 450°C could not be detected, while the blue light stimulated luminescence (BLSL) after TL had about one-tenth of the intensity before TL. This indicates that a part of the charges in shallower traps were detrapped thermally and returned to the deeper traps which were related to BLSL. The result implies that some of the BLSL-related traps are quite stable at room temperature and could be used for geological dating. In addition, two paramagnetic centers produced by sudden release of high pressure in synthesis process were found in the unirradiated stishovite by electron spin resonance (ESR). Their g-factors are g=2.00181 and g=2.00062 for an axial signal and g=2.00305 for the other isotropic signal. These signals could be used for an evidence of impacts if those signals could be stored in geological time.     

Very strong interlayer exchange coupling in epitaxial Fe/Fe1−xSix/Fe trilayers (x=0.4–1.0)

Fe/Fe_1−xSi_x/Fe (x=0.4–1.0) wedge-type epitaxial trilayers with improved homogeneity are grown by co-evaporation from two electron-beam sources. The coupling strengths of the bilinear (J₁) and biquadratic (J₂) coupling terms are derived from Brillouin light scattering (BLS) spectra and longitudinal MOKE hysteresis loops. The total coupling strength J=J₁+J₂ increases dramatically with increasing x and reaches values in excess of 6 mJ/m².     

Use of lasers to study magnetic resonance and magnetic relaxation

Optical methods of recording ESR, which were developed in the early 1950s to record magnetic resonance of excited atoms, are extensively used at present in investigations of ESR of the ground and excited states of atoms and paramagnetic centers in condensed media [1]. Attention is called in the present communication to additional capabilities of optical ESR and of paramagnetic relaxation methods, which are realizable through the use of laser sources.S. I. Vavilov State Optical Institute, Leningrad. Translated from Primenenie Lazerov v Atomnoi, Molekulyarnoi i Yadernoi Fiziki — Trudy II Vsesoyuznoi Shkoly, pp. 3–11, 1981.     

ESR in GdxRe1-xAl2 (Re=La, Lu, Y) - the experimental and the theoretical studies

The ESR measurements in Gd_xRe_1-xAl₂ (Re=La, Lu, Y) in high concentration range are presented. The theoretical analysis of ESR data in the whole concentration range x ε (0,1), which explains consistently the observed positive g shifts in unbottlenecked region and negative g shifts in bottlenecked region exhibits unambigously the d-character of band electrons in these compounds.     

Analysis of atomic arrangement in magnetic Fe–Pt nanoparticles

The order parameter S of Fe–Pt nanoparticles is estimated from X-ray diffraction (XRD) patterns. The total intensity of a diffraction peak is obtained by Rietveld analysis as well as simply integrating the intensity. The Rietveld analysis is found to provide a plausible value of S even for a sample showing an XRD pattern with broad and overlapped peaks. Another order parameter Q, which is obtained from Mössbauer spectra, is introduced, and it is confirmed that Q is equivalent to the probability of Fe atoms being in the L1₀-type atomic arrangement. The coercivity of Fe–Pt nanoparticles is directly proportional to Q, while it vanishes at S=0.4, indicating that the magnetic property of Fe–Pt nanoparticles has a closer relationship to Q than S.     

Determination of localized states in porous silicon

We determined the density of state distribution near the Fermi level in porous silicon from the analysis of the current–voltage (J–V) and the current–thickness (J–T) characteristics in the space-charge-limited-current (SCLC) regime. The distribution exhibits a minimum density at the Fermi level, which is similar to the U-shape-trap-distribution observed in crystalline Si–SiO₂ interface or in amorphous Si. Theoretical analysis well explains both the J–V and the J–L characteristics, which implies that the current flow is entirely controlled by localized states situated at the quasi-Fermi level.     

Description peculiarities of viscous and elastic properties of dense molecular liquids on the basis of the model of Lennard-Jones (n−6) fluid

Results previously obtained in molecular dynamics experiment with Lennard-Jones (n−6) (L-J (n−6)) fluid were applied for the determination of viscous and elastic properties of real molecular fluids (shear viscosity coefficient and pressure). Parameters σ and of real liquids (liquid hydrocarbons) were determined by fitting p–ρ–T data of model fluids to experimental p–ρ–T data of real liquids. Using the data obtained in that way, parameters σ and viscous and elastic characteristics of real liquids were determined. The comparison of experimental and calculated viscous and elastic characteristics revealed lesser dependence of viscous properties from n in comparison with elastic properties.     

ESR studies of E′ centres in geological flint

Properties of E′ centres of high geological age in flint from different locations have been studied. ESR spectra of γ-irradiated samples of heated and unheated Silurian and Eocene flint show thermally unstable components. The spectrum of one species could be simulated using the g values: 2.00164, 2.00059, and 2.00046. Two others deliver ESR-signals at g=2.0015 and 2.0012, respectively. These unstable components cannot be identified with any known E′ centres. About 50% of the ESR intensity of the E′ centres in unheated flint induced by artificial γ-rays is thermally stable. This effect is probably due to a steady state and might be useful for dating of unburned flint tools (“skinflint dating”).     

Effects of oxygen flow rate on the properties of HfO2 layers grown by metalorganic molecular beam epitaxy

The investigations on the properties of HfO₂ dielectric layers grown by metalorganic molecular beam epitaxy were performed. Hafnium-tetra-tert-butoxide, Hf(C₄H₉O)₄ was used as a Hf precursor and pure oxygen was introduced to form an oxide layer. The grown film was characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), and capacitance–voltage (C–V) and current–voltage (I–V) analyses. As an experimental variable, the O₂ flow rate was changed from 2 to 8 sccm while the other experimental conditions were fixed. The XPS spectra of Hf 4f and O 1s shifted to the higher binding energy due to the charge transfer effect and the density of trapped charges in the interfacial layer was increased as the oxygen flow rate increased. The observed microstructure indicated the HfO₂ layer was polycrystalline, and the monoclinic phases are the dominant crystal structure. From the C–V analyses, k = 14–16 and EOT = 44–52 were obtained, and the current densities of (3.2–3.3) × 10⁻³ A/cm² were measured at −1.5 V gate voltage from the I–V analyses.     

On the Hebb–Wagner polarisation of SrTiO3 doped with redox-active ions

Hebb–Wagner polarisation is analysed for the case that internal redox-reactions complicate the situation. In the general case current–voltage characteristics deviate significantly from the Hebb–Wagner equation. Analytical results are derived and relevant approximations given. Theoretical and experimental current–voltage relations obtained for a 2.15×10¹⁸ cm⁻³ Fe-doped SrTiO₃ single crystal at P_O2=10⁵ Pa, agree reasonably well, and the results of the partial conductivities match findings obtained from other experiments. In addition, the fact is emphasised that a Hebb–Wagner-type current–voltage relation only requires the fulfilment of a power law for the non-blocked carrier concentrations with respect to the component partial pressure and not a field-free situation. In this case the Faraday constant appearing in the Hebb–Wagner equation has to be replaced by F, where is the product of the number of electrons necessary to ionise the gaseous component (n) times the absolute characteristic exponent (|N|). The condition of zero field, i.e. negligible chemical potential gradient with respect to the non-blocked species is identical to |N|=1/n. If |N|=const≠1/n, the internal field is non-zero but is still proportional to the gradient of the component potential.     

Li-doping effects on the electrical properties of ZnO films prepared by the chemical-bath deposition method

Zn_1−xLi_xO thin films, with x varying from 0.0 to 0.5, successfully have been deposited on glass substrates using the chemical bath deposition (CBD) technique. J–E characteristics, DC conductivity and dielectric measurements have been carried out. These measurements were done as a function of temperature, Li concentration and applied electric field intensity. The J–E characteristics are explained in terms of the Pool–Frenkel and Schottky effects. The J–E relation and DC conductivity are strongly dependent on both the Li concentration and applied electric field intensity. Dielectric hysteresis was observed between heating and cooling runs which revealed that the dielectric constant often increases slowly in the low-temperature region, then increases faster above the phase transition.     

The electrical characterization of Zn(Phen)q/p-type Si/Al diode with interfacial layer by current–voltage characteristics

The current–voltage characteristics of Zinc (II) [(8-hydroxyquinoline)(1,10-phenanthroline)] complex (Zn(phen)q)/p-type Si/Al diode with interfacial layer have been investigated. The barrier height and ideality factor of the diode were found to be 0.71 eV and 2.05. Zn(phen)q/p-type Si/Al diode shows a metal–insulator–semiconductor structure resulted from presence of series resistance and an interfacial layer. The n and φ_B values obtained the presence of interfacial layer are 1.02 and 0.70 eV, respectively. The effect of series resistance was evaluated using a method developed by Cheung. The R_s and n values were determined from the d ln(I)/dV plot and were found to be 30.43 kΩ and 2.16, respectively. The barrier height and R_s values were calculated from the H(I)–I plot and were found to be 0.70 eV and 30.99 kΩ. The density of the interface states of the Zn(phen)q/p-type Si/Al diode was calculated and was found to be an order of 10¹³ eV⁻¹ cm⁻².     

Ti/Al p-GaN Schottky barrier height determined by C–V measurements

Data are presented on the rigorous method of capacitance–voltage (C–V) measurements to the barrier height of Ti/Al p-GaN Schottky junction. For a sample with Hall concentration of 5.5 × 10¹⁶/cm³ the upper limit of the modulation frequency leading the full response of the activated carriers is defined as 1.5 kHz from the capacitance versus modulation frequency (C–f) plot. The activation energy of the Mg acceptors determined from the temperature-dependent C–f plot is 0.12 eV. The barrier height estimated with this activation energy and the intercept voltage of the 1/C²–V plot drawn with the 1.5 kHz C–V data is 1.43 eV at 300 K and 1.41 eV at 500 K. This is the most reliable barrier height ever reported. A reliable room temperature C–V doping profile is demonstrated using the 1.5 KHz modulation, which is sensitive enough to resolve the presence of a 15 nm thin highly doped (8 × 10¹⁸/cm³) layer formed near the surface.     

Pressure–temperature studies on conductivity of TlX(X=Cl,Br,I) compounds:: I: phase diagram. II: ionic mobility

We have measured the conductivity σ of TlX(X=Cl, Br, I) compounds up to 5.3 GPa and between 300–823 K. The σ–T dependence for all compounds can be divided into three distinct regions: (i) low temperature (LT), <400 K, with unusual negative σ–T dependence, (ii) intermediate temperature (IT), 400<650 K, with positive σ–T dependence and (iii) high temperature (HT), T>650 K, with positive σ–T dependence. The σ–T isobars were used to construct the T–P solid phase diagram for each compound. The LT region data indicate a new meta-stable phase in the 1.0–3.5 GPa range. The LT→IT transition is characterized by an inverse σ–T dependence followed by normal Arrhenius behavior up to and including the HT region. The extrapolation to 1 atm of the P-dependent boundary between IT and HT regions above 3 GPa for each compound in the P–T plot yields a value close to its respective normal (1 atm) T_melt suggesting a solid order–disorder transition type paralleling -AgI behavior. The abrupt drop in conductivity in the LT region for P between 2.5–4.1 GPa of all compounds is at variance with the Arrhenius behavior observed for unperturbed ion migration implying the appearance of a second factor overriding the Arrhenius temperature dependence. Normal Arrhenius σ–T dependence prevails in both IT and HT regions with Q_c values of 85–100 kJ mol⁻¹ and 50–75 kJ mol⁻¹, respectively. The higher conductivities at 0.4 GPa for TlBr and TlI relative to their 1 atm data and the increasing σ with P are in strong contrast to the normal σ-P behavior of TlCl. The dependence of activation volume ΔV^‡ on T for TlCl, i.e. ΔV^‡>0, shows abnormally high values with a maximum at 500 K for P<3.0 GPa but reasonable ΔV^‡ values appear above 3.0 GPa. The ΔV^‡–T dependence for both TlBr and TlI with ΔV^‡<0 is incompatible with an ion transport mechanism suggesting an electronic conduction process and implying an ionic–metallic transition at higher pressures. These contrasting conductivity features are discussed and interpreted in terms of electronegativity differences and bonding character rather than structure.     

Characterization of metal/GaN Schottky interfaces based on I–V–T characteristics

Interface properties of metal/n- and p-GaN Schottky diodes are studied by I–V–T and C–V–T measurements, and simulation of their characteristics. On the basis of the previously proposed “surface patch” model, the gross behavior of I–V–T characteristics, which includes Richardson plots together with temperature dependence of the effective Schottky barrier heights (SBHs) and n-values, can be well reproduced. Furthermore, the dependence of the true SBH on the metal work function was also deduced from high-temperature I–V curves, giving S-values of 0.28 and 0.20 for n- and p-GaN samples, respectively, and the interface Fermi level tends to be pinned at a characteristic energy of about two-third of the bandgap.