低强度飞秒激光激发下CdTe和CdTe/CdS核壳量子点的荧光上转换研究

利用400 nm和800 nm不同波长的低强度飞秒激光,对CdTe和CdTe/CdS核壳量子点溶胶进行激发,研究其稳态和时间分辨荧光性质.800 nm飞秒激光激发下,CdTe和CdTe/CdS核壳量子点产生上转换发光现象,上转换荧光峰与400 nm激发下的荧光峰相比蓝移最多达15 nm,而且蓝移值与荧光量子产率有关.变功率激发确认激发光功率与上转换荧光强度间满足二次方关系,时间分辨荧光的研究表明荧光动力学曲线服从双e指数衰减.提出表面态辅助的双光子吸收模型是低激发强度上转换发光的主要机理.CdTe和CdT 关键词： CdTe量子点 CdTe/CdS核壳量子点 时间分辨荧光 上转换荧光     

微乳液法SiO2/罗丹明B荧光杂化纳米微球的制备与表征

在甲苯存在下的反相微乳液体系中,将γ-缩水甘油醚氧丙基三甲氧基硅烷(KH560)与罗丹明B进行预反应;再与正硅酸乙酯( TEOS)经原位溶胶-凝胶反应,制备SiO2/罗丹明B荧光杂化纳米微球.通过FTIR、UV-Vis、TEM、TG和光致发光谱对杂化纳米微球进行了表征.结果表明:罗丹明B与KH560间通过酯基形成化学键...     

CdTe,核 壳型CdTe/CdS及CdTe/ZnS量子点的合成及表征

在水相中制备了半导体CdTe纳米晶,核 壳型CdTe/CdS和CdTe/ZnS纳米晶（即量子点;QDs）.利用扫描隧道显微镜（STM）和荧光光谱(FS)对合成的纳米晶量子点进行了研究,并且根据FS的数据进行了量子效率的计算.STM的结果表明合成的量子点直径约为3 nm并且分布良好.为了提高量子效率,对Cd2+浓度和Cd2+∶S2－比例等反应条件进行了研究,结果表明随着回流时间的增加,核 壳型量子点CdTe/CdS的量子效率总体上呈下降趋势.CdTe/CdS在pH8.5,Cd2+∶S2－=10∶1（摩尔比）时可获得80.0%的最大量子效率.同时制备了核 壳型量子点CdTe/ZnS,其最大发射波长由551 nm（CdTe）红移到635 nm（CdTe/ZnS）表明量子点的尺寸在增长,但是量子效率下降到14.4%. 当前研究的量子点可适用于生物标记,生物成像,以及基于共振能量转移的生物传感研究.     

SiO2包覆铕(Ⅲ)配合物的荧光纳米粒子合成与性质

以前驱物pAB-DTPAA-APTEOS、正硅酸乙酯(TEOS)和三氯化铕(EuCl3)等为原料,采用油包水(W/O)的反相微乳液法,在正硅酸乙酯(TEOS)和3-氨丙基三乙氧基硅烷(APTEOS)的共同水解下,制备出新型的SiO2包覆铕配合物荧光纳米粒子Eu-pAB-DTPAA-AP-SiO2。运用TEM、IR、UV-Vis、荧光光谱等技术对荧光纳米粒子进行了表征。TEM结果表明:包覆体呈球形,分散均匀,平均粒径为40nm。纳米粒子与配体、前驱物的紫外吸收谱相比较,峰位发生了一定的红移,表明通过反相微乳液法得到的固体粉末与EuCl3反应后,已经生成配合物Eu-pAB-DTPAA-AP-SiO2。红外光谱研究表明,在801cm-1出现νSi—C的伸缩振动峰,471cm-1处出现νEu—O的伸缩振动峰。由此证实Eu-pAB-DTPAA-AP-SiO2配合物的存在。荧光光谱分析表明,纳米粒子Eu-pAB-DTPAA-AP-SiO2表现出较好的荧光性能,位于592,615,689nm的发射峰分别归属于Eu3 离子的5D0→7F1、5D0→7F2和5D0→7F4跃迁,其中最强峰615nm属于Eu3 的特征跃迁发射。作为一种新型的荧光试剂,该纳米粒子具有粒径小,亲水性强,荧光强度大,且表面的氨基能方便地与生物分子偶联,故可作为优良的时间分辨荧光标记物用于各种高灵敏生物检测技术中。     

SiO2/Ge:SiO2/SiO2夹层结构红外光发射的起源

我们借助傅立叶变换红外光谱（FT－IR）以及光致激发谱（PLE）,研究SiO2/Ge:SiO2/SiO2夹层结构红外光发射的起源。谱分析表明,该红外光发射并非起源于纳米锗、硅的量子限制效应以及锗、硅的中性氧空位,而与锗的氧化物紧密相关。PLE的结果证实它们来源于GeO色心TⅡ‘→S0的光学跃迁,给出的GeO电子态模型描述了载流子激发和复合的过程。     

HgTe/CdS/ZnS多壳层量子点的制备与表征

采用一种简单的方法合成HgTe/CdS/ZnS多壳层量子点。首先,以1-硫代甘油为稳定剂,在水相溶液中制备出HgTe核量子点;然后,采用外延生长法依次在HgTe核量子点表面包覆CdS和ZnS壳层,合成出最终具有稳定近红外发光的HgTe/CdS/ZnS多壳层量子点。该合成方法仅需3个步骤,具有操作简单、成本低廉的优点。实验结果显示,当反应温度为90 ℃、反应溶液pH为11.0、反应加热回流时间为4 min时,HgTe/CdS/ZnS多壳层量子点具有最高荧光量子产率36%。     

在SiO2分子筛内CdS纳米晶的内延生长及特性研究

近年来,国际上纳米材料科学及其应用的研究非常活跃.纳米材料的尺寸效应和面效应与体材料相比有特殊的物理和化学特性,尤其是它的界面效应更为明显,因而米材料作为一种新兴的材料,受到了广泛的重视.但到目前为止,纳米材料的制备大采用化学合成的方法如悬胶法、凝胶-溶胶法等,而利用这些方法制备的纳米材料通常一定的尺寸分布,这主要是由于纳米材料在一定温度和时间下的凝结和分解等原因造的[1],因而严重地影响了纳米材料在各方面的特性.     

a-Si/SiO2多量子阱材料制备及其晶化和发光

本文研究用等离子体增强化学气相淀积(PECVD)方法淀积SiO2和非晶硅(a-Si)时淀积速率和薄膜折射率与淀积条件的关系。选择合适的淀积条件制备了a-Si/SiO2多量子阱结构材料。用激光扫描退火方法使其晶化,当a-Si和SiO2层厚度分别为4nm和6nm时,形成了颗粒大小为3.8nm的硅晶粒。晶化后的样品在10K下可以观察到较强的光荧光发射,三个峰值波长分别为810、825和845nm.     

SiO2的赝晶化及AIN/SiO2纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列不同SiO2 层厚度的A1N/SiO2 纳米多层膜,利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能,研究了SiO2 层在多层膜中的晶化现象及其对多层膜生长方式及力学性能的影响.结果表明,由于受AIN六方晶体结构的模板作用,溅射条件下以非晶态存在的SiO2层在其厚度小于0.6 nm时被强制晶化为与AlN相同的六方结构赝晶体并与AlN形成共格外延生长.由于不同模量的两调制层存在晶格错配度,多层膜中产生了拉、压交变的应力场,使得多层膜产生硬度升高的超硬效应.SiO2随层厚的进一步增加又转变为以非晶态生长,多层膜的外延生长结构受到破坏,其硬度也随之降低.     

水溶胶CdSe/CdS核/壳结构纳米晶制备及光学性质的研究

以巯基乙酸为稳定剂在水溶液中合成了水溶胶CdSe/CdS核/壳结构的量子点,利用X射线粉末衍射(XRD)和X射线光电子能谱(XPS)对量子点结构进行了表征;并对化学组成和尺寸分布进行了研究。通过紫外-可见吸收光谱、激发光谱与发射光谱研究了它们的发光特性。     

Photoluminescence quenching of CdTe/CdS core-shell quantum dots in aqueous solution by ZnO nanocrystals

Photoluminescence (PL) properties of 3-mercaptopropionic acid (MPA) coated CdTe/CdS core-shell quantum dots (QDs) in aqueous solution in the presence of ZnO colloidal nanocrystals were studied by steady-state and time-resolved PL spectroscopy. The PL quenching of CdTe/CdS core-shell QDs with addition of purified ZnO nanocrystals resulted in a decrease in PL lifetime and a small red shift of the PL band. It was found that CdTe(1.5 nm)/CdS type II core-shell QDs exhibited higher efficiency of PL quenching than the CdTe(3.0 nm)/CdS type I core-shell QDs, indicating an electron transfer process from CdTe/CdS core-shell QDs to ZnO nanocrystals. The experimental results indicated that the efficient electron transfer process from CdTe/CdS core-shell QDs to ZnO nanocrystals could be controlled by changing the CdTe core size on the basis of the quantum confinement effect.     

Sonoelectrochemical synthesis of water-soluble CdTe quantum dots

A facile and fast one-pot method has been developed for the synthesis of CdTe quantum dots (QDs) in aqueous phase by a sonoelectrochemical route without the protection of N₂. The morphology, structure and composition of the as-prepared products were investigated by high resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD) and energy dispersive X-ray spectrometer (EDS). The influences of current intensity, current pulse width, and reaction temperature on the photoluminescence (PL) and quantum yield (QY) of the products were studied. The experimental results showed that the water-soluble CdTe QDs with high PL qualities can be conveniently synthesized without precursor preparation and N₂ protection, and the PL emission wavelength and QY can be effectively controlled by adjusting some parameters. This method can be expected to prepare other QDs as promising building blocks in solar cell, photocatalysis and sensors.     

Preparation of water-soluble CdTe/CdS core/shell quantum dots with enhanced photostability

CdTe/CdS core/shell quantum dots (QDs) have been synthesized in an aqueous phase using thioacetamide as a sulfur source. The quantum yield was greatly enhanced by the epitaxial growth of a CdS shell, which was confirmed by X-ray photoelectron spectroscopy (XPS) results. The quantum yield of as-prepared CdTe/CdS core/shell QDs without any post-preparative processing reached 58%. The experimental results illustrate that the QDs with core/shell structure show better photostability than thioglycolic acid (TGA)-capped CdTe QDs. The cyclic voltammograms reveal higher oxidation potentials for CdTe/CdS core/shell QDs than for TGA-capped CdTe QDs, which explains the superior photostability of QDs with a core/shell structure. This enhanced photostability makes these QDs with core/shell structure more suitable for bio-labeling and imaging.     

Effect of temperature and pumping power on the photoluminescence properties of type-II CdTe/CdSe core-shell QDs

CdTe/CdSe core-shell QDs type II was prepared by two steps synthetic process and embedded in polymer host. Emission in the NIR region was recorded. The effect of Ar laser excitation at different powers on the optical properties of the prepared QDs is studied at different temperatures (300-10 K). Amplified spontaneous emission is observed at room temperature and at 10 K. Also, lifetime measurement of prepared QDs was documented using N₂-laser.     

核-壳结构ZnS:Tb/CdS纳米晶的电致发光

利用微乳液方法合成出粒径为4nm的核．壳结构ZnS：Tb／CdS纳米晶。用XRD、TEM及荧光光谱等手段对合成的纳米晶的结构、形态和光学特性分别进行了表征。将ZnS：Tb／CdS纳米晶制作成有机-无机杂化结构电致发光器件,其结构为ITO／poly（3,4-ethylene dioxythiophene）：poly（styrene sulfonate）（PEDOT-PSS）（70nm）／poly（vinyleobarzale）（PVK）（100nm）／ZnS：Tb／CdS纳米晶（120nm）／2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline（BCP）（30nm）／LiF（1．0nm）／Al（100nm）。当驱动电压为13V时,可以测到Tb^3＋离子的两个特征峰。在电致发光光谱中未测到聚合物PVK的发光,说明电子和空穴是在纳米晶层上复合的。当驱动电压为25V时,得到器件的最大亮度为19cd／m^2。     

硅包覆上转换纳米晶制备和表征及生物特异性标记研究

以NaYF₄为代表的上转换纳米晶作为细胞及组织标记的研究越来越热。但易团聚,水溶性、生物兼容性差,没有与生物偶联官能团等缺点限制了其应用,因而表面修饰显得尤为重要。作者通过水热和共沉淀相结合方法,制备了NaYF₄∶Yb3+, Er3+上转换纳米晶,并对其包覆二氧化硅壳层。SEM表征硅包覆前后分别为25和250 nm的单分散粒子,说明硅已成功地包覆于纳米晶表面。980 nm激光照射下,样品的PBS胶体溶液呈可视上转换绿光。上转换荧光光谱和寿命均表明二氧化硅壳层对其发光性质影响很小。圆二色谱说明蛋白分子通过戊二醛与纳米晶偶联前后的二级结构基本不变。基于硅片上的抗原抗体荧光免疫识别试验进一步验证了偶联蛋白分子的特异性,表明该上转换纳米晶适合于生物标记。     

Photostability comparison of CdTe and CdSe/CdS/ZnS quantum dots in living cells under single and two-photon excitations

The photostability is an outstanding feature of quantum dots (QDs) used as fluorescence probes in biological staining and cell imaging. To find out the related factors in the QD photostability, the photobleaching of naked CdTe QDs and BSA coated CdSe/CdS/ZnS QDs in human hepatocellular carcinoma (QGY) cells and human nasopharynx carcinoma (KB) cells were studied under single photon excitation (SPE) and two-photon excitation (TPE). In these two cell lines the cellular QDs were irradiated by a 405 nm continuous wave laser for SPE or an 800 nm femto-second (fs) laser for TPE. The QD photobleaching with the irradiation time was found to fit a biexponential decay. The fast decay plays a dominant role in the bleaching course and thus can be used as the parameter to quantitatively evaluate the QD photostability. The TPE decreased the QD photobleaching as compared to SPE. The BSA coated core/shell QDs had improved the photostability up to 4-5 times than the naked QDs due to the shielding effect of the QD shell. Therefore, it is better to use core/shell structured QDs as the fluorescence probe combining with a TPE manner for those long-term monitoring studies.     

水溶性碲化镉量子点测定甲磺酸培氟沙星

合成巯基乙酸修饰的水溶性发光CdTe量子点,构建了CdTe-Al3+-甲磺酸培氟沙星荧光体系。考察了缓冲体系及pH值、表面活性剂的种类、反应时间及共存物质等对测定的影响。在最佳条件下,CdTe量子点发光强度与甲磺酸培氟沙星的浓度在3.6×10-3—4.00μg/mL范围内呈良好线性。该方法可直接用于甲磺酸培氟沙星片剂的测定,结果满意。     

Carrier hopping in InAs/AlyGa1−yAs quantum dot heterostructures: effects on optical and laser properties

The optical properties of InAs/Al_yGa_1−yAs self-assembled quantum dots are studied as a function of temperature from 10 K to room temperature. The temperature dependence of carrier hopping between dots is discussed in terms of the depth of the dot confinement potential and the dispersion in dot size and composition. We show that carrier hopping between dots influences both the electrical and optical properties of laser devices having dots as active medium.