Influences of thermal annealing, the electrolyte pH, and current density on the interface state density distribution of anodic MOS structures

2 /p-Si MOS structures were prepared in 0.1 M K₂SO₄ electrolyte with a pH of 7 (the 0.1 M KOH solution was buffered with H₂SO₄) at current densities of 3, 5, and 7 mA/cm² and with four different pH values of the electrolyte at 3 mA/cm². It is found that thermal annealing at a relatively low temperature can be used to improve the anodic MOS characteristics. Moreover, of the pH and current density it followed that the pH has a dominant role in the interface electrical properties. The lowest interface state densities at the maximum and the midgap positions are 7.1×10¹¹ and 2.7×10¹⁰ eV^-1cm^-2 for a sample made with pH=7, J=3 mA/cm². The characteristics of this sample seem satisfactory for device applications of anodized p-Si. Received: 8 July 1996/Accepted: 22 January 1997     

The effect of non-constant effective tunneling mass and asymmetry for resonant tunneling in double-barrier structures

We discuss the transmission coefficient τ_d in non-repetitive, one-dimensional, rectangular double-barrier structures without simplifications such as strongly attenuating barriers, strong localization, or overall constant effective tunneling mass of the electron. For resonance τ_d=1, we obtain two non-approximative conditions which require different resonance energies of the tunneling electron than previously reported in the literature. In fact, the resonance peaks are shifted to higher energy levels in the order of the width of the peaks due to the effect of non-constant tunneling mass. We investigate the dependence of the resonance condition and the shape of the resonance peaks in regard to perturbation of the electron energy, the gap width as well as the barrier width and height. Resonance is stable for variation of the barrier width but sensitive for variation of the barrier height and the gap width. Received: 9 December 1998 / Accepted: 5 January 1999 / Published online: 31 March 1999     

Lifetimes of image-potential states on the Pt(111) surface probed by time-resolved two-photon photoemission spectroscopy

We have investigated the population dynamics of image-potential states on the clean Pt(111) surface. The first two image-potential states have been resolved exhibiting lifetimes of 26±7 fs and 62±7 fs. Those lifetimes are in contrast to the (111) surfaces of Ag and Cu, where the n=2 state is degenerate with bulk states leading to lifetimes shorter than 20 fs. Received: 30 March 2000 / Accepted: 2 September 2000 / Published online: 12 October 2000     

Rapid communicationPhotoelectron emission in femtosecond laser assisted scanning tunneling microscopy

Direct illumination of the tunneling gap in an ultrahigh vacuum scanning tunneling microscope with ultrashort pump-probe laser pulses may offer ultimate spatial and temporal resolution in surface experiments. The electronic bandwidth of the tunneling gap ( 1 THz) does not limit the time resolution. Our experiments show that multiphoton photoelectron emission from the sample limits the application of this detection scheme at high laser fluence. However, a substrate specific pump-probe effect in the photoelectron yield with femtosecond transients is observed on Tantalum and on GaAs(110) surfaces. Received: 5 November 1996     

Surface-state linewidth from scanning tunnelling spectroscopy

The STM can be used to investigate lifetimes of hot holes in a surface state at low temperatures. We analysed dI/dV data from Ag(111) using detailed tunnelling calculations and a simple model and found an electron self-energy of Σ=4.9±0.6 meV. The corresponding lifetime τ= 67±8 fs is considerably higher than those determined by angle-resolved photoemission, although it remains below theoretical predictions. Spatially resolved dI/dV spectra reveal that the lifetime decreases drastically in proximity to defects such as surface steps. Received: 22 March 1999 / Accepted: 25 June 1999 / Published online: 16 September 1999     

Time domain capacitance spectroscopy of tunneling electrons in the two-dimensional electron gas

We have developed a technique capable of measuring the tunneling current into both localized and conducting states in a 2D electron system (2DES). The method yields I-V characteristics for tunneling with no distortions arising from low 2D in-plane conductivity. We have used the technique to determine the pseudogap energy spectrum for electron tunneling into and out of a 2D system and, further, we have demonstrated that such tunneling measurements reveal spin relaxation times within the 2DEG. Pseudogap: In a 2DEG in perpendicular magnetic field, a pseudogap develops in the tunneling density of states at the Fermi energy. We resolve a linear energy dependence of this pseudogap at low excitations. The slopes of this linear gap are strongly field dependent. No existing theory predicts the observed behavior. Spin relaxation: We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2DES. For most 2D Landau level filling factors, we find that electrons tunnel with a single, well-defined tunneling rate. However, for spin-polarized quantum Hall states (ν=1, 3 and 1/3) tunneling occurs at two distinct rates that differ by up to two orders of magnitude. The dependence of the two rates on temperature and tunnel barrier thickness suggests that slow in-plane spin relaxation creates a bottleneck for tunneling of electrons.     

(e,2e) electron spectroscopy of surfaces

Received: 21 March 1997/Accepted 12 August 1997     

Chemical-specific imaging of multicomponent metal surfaces on the nanometer scale by scanning tunneling spectroscopy

The topographic and chemical surface structure of a submonolayer iron film on a W(110) substrate has been studied by combined scanning tunneling microscopy and spectroscopy. Local tunneling spectra revealed a pronounced difference in the electronic structure between nanometer-scale iron islands of monolayer height and the bare W(110) substrate. In particular, a pronounced empty-state peak at 0.2 eV above the Fermi level has been identified for the iron islands. Based on the pronounced difference in the local tunneling spectra measured above the iron islands and the tungsten substrate, chemical-specific imaging was achieved by performing spatially resolved measurements of the differential tunneling conductivitydl/dU (x, y) at selected sample bias voltages.     

Charge transient spectroscopy measurements of GaAs metal-insulator-semiconductor structures

The Au/Pd/Ti-SiO₂-(n)GaAs structures with and without (NH₄)₂S_x treated gallium arsenide surface, previously analysed by impedance spectroscopy (IS) method, have been investigated using charge transient spectroscopy (QTS) technique. The isothermal QTS spectra of MIS structures kept at room temperature under set of quiescent biases have been recorded in response to both negative and positive pulses of fixed small amplitudes. Two types of charge relaxation characterized by time constant values have been evidenced. The attempt to compare QTS results with ones obtained by impedance spectroscopy method has been presented.     

Dynamics of resonant and non-resonant tunneling in asymmetric coupled quantum wells

Within the framework of the effective mass approximation, coherent oscillations of a photoexcited electron wave packet in an asymmetric coupled quantum well structure have been studied using a time-dependent Schrödinger equation. In the method of calculation, the continuity of the current across a semiconductor heterojunction is considered. The amplitude and period of the electronic is obtained and in the case of high bias, it is found the existence of electric field-induced tunelling to semiconductor bulk.     

Resonant interband scattering of image-potential states

Image-potential states in front of a clean Cu (100) surface were investigated by time- and angle-resolved two-photon photo-emission (2PPE). We observe a previously unknown quasi-elastic relaxation channel, which efficiently couples states with different quantum numbers, n, and parallel momenta, k_∥. This process of resonant interband scattering (RIS) is independent of sample temperature and shows a close relationship to the pure dephasing of image-potential states. Received: 1 October 2001 / Revised version: 24 October 2001 / Published online: 23 November 2001     

Theoretical study of field emission currents from W(001) surface

We calculated the field emission of the W(001) surface based on a local density functional method. In this method, the electronic structure and the potential under an external electric field are calculated self-consistently using the pseudopotential method. The method is easy to implement and requires minimal computation time beyond that of a standard density functional calculation, while at the same time fully compatible with the density functional formalism. Results such as the enhancement factors are in good agreement with experiments and the effect of the surface reconstruction and the choice of exchange-correlation functionals on the field emission current will be discussed.     

Image-potential states on stepped Cu (001) surfaces

Image-potential states on Cu (117) and Cu (119) surfaces were studied by means of two-photon photoelectron spectroscopy. The regular array of steps generates a lateral potential on the vicinal surfaces, which modifies the surface-electronic structure. Compared to Cu (001), the band bottom of the n=1 image-potential states shifts by 40 meV to lower binding energy. The periodicity of the step-induced superlattice manifests itself as back-folding of the n=1 and 2 dispersion bands. At the surface Brillouin zone boundary a mini-gap opens with a width of 135 meV for the first image-potential state on Cu (117). On the vicinal surfaces the lifetime of the image-potential states is reduced by a factor of three as compared to Cu (001). This is attributed to a narrowing of the surface-projected bulk-band gap when projected along the [11n] direction. While the dephasing rate of the first image-potential state is close to the decay rate, higher members of the Rydberg-like series show negligible dephasing. Received: 16 October 2001 / Revised version: 9 April 2002 / Published online: 6 June 2002     

Electrostatic lattice coefficients and binding energy of orthorhombic La2-x Sr x CuO4

Three valency models for orthorhombic La_2-x Sr _x CuO₄ were investigated for increasing Sr concentrationsx (0x0.21): 1. Cu²⁺Cu³⁺, 2. apex O^2–O^– and 3. in-plane O^2–O^–. All calculations were done by using structural parameters valid for the temperature range from 10 to 22 K. We thereby calculated the electrostatic interaction energy which, next to ionization potentials and electron affinities, comprises a major of the binding energyE _B of crystals. Second-order effects were accounted for by calculating the strength of ionic dipole moments induced by crystal electric fields at relevant lattice sites. Their largest strengths are comparable to the dipole moment of the water molecule. Three out of five dipoles in La_2-x Sr _x CuO₄ vanish during the transition from the orthorhombic to the tetragonal phase. The binding energy differences between the different models suggest that the system is in a state of model 1. However, the differences are very small, being in the order of 0.3 to 0.76 eV atx=0.13.     

Surface magnetism: From the spin-resolved density of states to magnetic domain imaging on the nanometer scale

Making use of the information depth of only a few layers for electrons with low kinetic energies, photoemission experiments, with an additional measurement of the electron spin polarization or with excitation using circularly polarized radiation, allow one to determine whether adatoms change the magnetic properties at the surface and whether they “feel” the magnetism of the underlying substrate. This is investigated for oxygen adsorbed on Fe (110) and Co (0001). Enhanced surface sensitivity can be gained in tunneling experiments. The technique of spin-polarized metastable de-excitation spectroscopy thus enables one to determine the spin-resolved density of states in the near-surface region. By making the highly lateral resolving scanning tunneling microscope sensitive to the electron spin polarization it becomes possible to image magnetic domains on the nanometer scale; this is demonstrated for Gd (0001) surfaces. Received: 28 April 2000 / Accepted: 4 September 2000 / Published online: 7 March 2001     

Decay and dephasing of image-potential states due to surface defects and disorder

Received: 19 October 1998     

Electronic properties of the single-domain Li/Si(001) surface

Received: 14 October 1996/Accepted: 17 December 1996     

Dc and Ac conductivity of La2CuO4+δ

The complex conductivity of La₂CuO_4+δ has been investigated for frequencies 20 Hz≤ν≤4 GHz and temperatures 1.5K≤T≤450 K. Two single crystals with δ≈0 and δ≈0.02 were investigated, using dc (four-probe), reflectometric and contact-free techniques. At high temperatures the dc conductivity is thermally activated with low values of the activation energy. For low temperatures Mott's variable range hopping dominates. The real and imaginary parts of the ac conductivity follow a power-law dependence σ∼v ^s, typical for charge transport by hopping processes. A careful analysis of the temperature dependence of the ac conductivity and of the frequency exponents has been performed. It is not possible to explain all aspects of the ac conductivity in La₂CuO_4+δ by standart hopping models. However, the observed minimum in the temperature dependence of the frequency exponents strongly suggests tunneling of large polarons as dominant transport process.     

Surface effects in Dy,DySb and DyTe observed by photoelectron spectroscopy

Cold condensed (100 K) Dy-films, as well as DySb and DyTe were studied by photoelectron spectroscopy using HeII and HeII^* excitation sources. The spectra were analyzed using the relative intensities and energy splittings of the individual 4f-multiplets from intermediate coupling calculations for bulk and surface multiplet components. At the surface of Dy the 4f ⁸ final state components are found to be shifted to higher binding energy by 0.60±0.05 eV. Their larger linewidth as compared to the bulk lines indicates the presence of lowcoordinated sites at the low-temperature surface. The 4f-surface shift for trivalent DySb and DyTe is found to be only 0.2 eV and 0.4eV, respectively, as a consequence of a chemical shift of 1.1 eV towards higher binding energy as compared to the pure metal. The Dy atoms at the surface of DyTe are found to be stabilized by only 0.2 eV in their trivalent state. Finally, a careful oxidation study of the cold-condensed Dy-films reveals that no manybody satellite has to be invoked to explain the appearance of a 6 eV peak in the spectra.     

A study of interface characteristics in HfAlO/p-Si by deep level transient spectroscopy

Deep level transient spectroscopy (DLTS) and high-frequency capacitance-voltage (HF-CV) measurement are used for the investigation of HfAlO/p-Si interface. The so-called “slow” interface states detected by HF-CV are obtained to be 2.68 × 10¹¹ cm⁻². Combined conventional DLTS with insufficient-filling DLTS (IF-DLTS), the true energy level position of interfacial traps is found to be 0.33 eV above the valance band maximum of silicon, and the density of such “fast” interfacial traps is 1.91 × 10¹² cm⁻² eV⁻¹. The variation of energy level position of such traps with different annealing temperatures indicates the origin of these traps may be the oxide-related traps very close to the HfAlO/Si interface. The interfacial traps’ passivation and depassivation effect of postannealing in forming gas are shown by comparing samples annealed at different temperatures.