Electrical properties of CuTlSe2 in the liquid state

The electrical conductivity and thermoelectric power of CuTlSe₂ have been investigated as a function of temperature up to 230 °C above its melting point. In the liquid state the experimental data are analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors (Mott, 1970). Positive thermoelectric power suggests a large predominance of holes in electrical conduction. It appears that the conduction is due to holes in extended states near the band edge. It is found that the energy gap has a large temperature coefficient =5.5×10^–4eV/K.     

Electrical conductivity and thermoelectric power of AgInSe2 in the solid and liquid states

The electrical conductivity and thermoelectric power of AgInSe₂ have been investigated as a function of temperature from 420°C to 950°C. Experimental data are analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors [1]. The activation energy calculated from electrical conductivity data is found to be 0.06 eV for the solid and 0.37 eV for the liquid phase. Moreover, the coefficient of the linear decrease of the energy gap with temperature was found to be 1.96×10^–4 eV/K.     

Electrical properties and thermal conductivity of AgTlTe2 in the solid and liquid phases

Measurements of the electrical conductivity, thermelectric power and thermal conductivity of an AgTlTe₂ semiconductor in the solid and liquid states were carried out in a wide range of temperatures. In the liquid state the data analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors. Positive thermoelectric power suggests a large predominance of holes in electrical transport.     

Semi-metallic behaviour of i-AlCuFe quasicrystals

We report on new measurements of the electrical conductivity, Hall effect and thermoelectric power in the temperature range from 2 K to 440 K for AlCuFe quasicrystals of different compositions and annealing treatments. Particularly, the Hall coefficient and the thermopower show a strong dependence on composition and also on heat treatment. The increase of sample perfection on annealing between 810° C and 825° C is demonstrated by analysing X-ray measurements.All measured quantities can be explained in terms of a semimetal containing both electrons and holes at low temperatures, at least for samples near the ideal quasicrystalline structure and composition.     

Charge transfer near the Néel temperature in La2CuO4+x

The electrical resistance and the thermoelectric power in the ab plane of a weakly oxygen-doped La₂CuO_4+x crystal (0.001<x<0.007) and its static magnetic susceptibility were studied in the vicinity of antiferromagnetic transition. The electrical resistance and the thermoelectric power behave anomalously near the Néel temperature, indicating that the transport is strongly affected by the establishment of long-range antiferromagnetic order. Analysis of the obtained data allows the conclusion to be drawn that the doping gives rise to a conduction band as a result of the overlap between the wave functions of deep impurity states that are strongly renormalized due to the correlation and polaron effects.     

DC conductivity and magnetic properties of piezoelectric–piezomagnetic composite system

A series of composites (1−x) (Ni_0.8Zn_0.2Fe₂O₄)+x (BaTiO₃), where x=0%, 20%, 40%, 60%, 80% and 100% BT content, have been prepared by the standard ceramic technique, then sintered at 1200 °C for 8 h. X-ray diffraction analysis shows that the prepared composites consist of two phases, ferrimagnetic and ferroelectric. DC electrical resistivity, thermoelectric power, charge carriers concentration and charge carrier mobility have been studied at different temperatures. It was found that the DC electrical conductivity increases with increasing BT content. The values of the thermoelectric power were positive and negative for the composites indicating that there are two conduction mechanisms, hopping and band conduction, respectively. Using the values of DC electrical conductivity and thermoelectric power, the values of charge carrier mobility and the charge carrier concentration were calculated. Magnetic measurements (hysteresis loop and magnetic permeability) show that the magnetization decreases by increasing BT content. M–H loop of pure Ni_0.6 Zn_0.4 Fe₂O₄ composite indicates that it is paramagnetic at room temperature and that the magnetization is diluted by increasing the BT content in the composite system. The value of magnetoelectric coefficient for the composites decreases by increasing BT content for all the compositions except for 40% BT content, which may be due to the low resistivity of magnetic phase compared with the BT phase that causes a leakage of induced charges on the piezoelectric phase. Since both ferroelectric and magnetic phases preserve their basic properties in the bulk composite, the present BT–NZF composite are potential candidates for applications as pollution sensors and electromagnetic waves.     

High temperature transport properties of Ag-added (Ca0.975La0.025)3Co4O9 ceramics

Ag-added (Ca_0.975La_0.025)₃Co₄O₉ ceramics were fabricated using spark plasma sintering from the precursor powder synthesized by a polyacrylamide gel method. The results indicated that Ag precipitated as a second phase in Ca₃Co₄O₉ matrix. The addition of Ag was effective in enhancing the electrical conductivity and had a slight effect on Seebeck coefficient. In addition, the temperature dependence of electrical conductivity showed that the hole hopping conduction mechanism was dominant for the Ag-added (Ca_0.975La_0.025)₃Co₄O₉ ceramics. The activation energy remained unchanged with the increasing Ag content. The thermoelectric power factor of Ag-added (Ca_0.975La_0.025)₃Co₄O₉ ceramics reached about 5×10⁻⁴ Wm⁻¹ K⁻² at 700 °C, suggesting a promising thermoelectric oxide candidate at high temperatures.     

Calculation of the electronic band structure for the hole-metal state of iodine in high-pressure phase

It is shown by calculation of an electronic energy band structure that iodine in high-pressure phase (above 210 kbar) is a “hole-metal”, in which the conduction is due to holes. Properties of such states are discussed on the basis of the calculated band and analysis of measurements of a reflectance and a thermoelectric power recently reported.     

Electrical conduction in manganese tungstate

The a.c. and d.c. electrical conductivity and thermoelectric power of a single crystal of MnWO₄ are reported in the temperature range 300–1200 K. It has been found that the dominant charge carriers are holes over the entire temperature range studied. A break in the log σ-($\text{1}\text{T}$) curve occurs around 600 K. The activation energies below and above this break temperature have been estimated as 0.53 and 0.57 eV. The charge carrier mobilities have also been estimated. The data have been analysed using the polaronic concept of electrical conduction.     

Electrical conduction in copper vanadate

A.C. and d.c. electrical conductivities, thermoelectric power and dielectric constant of copper vanadate (CuV₂O₆) have been measured in the temperature range 300–1000 K in order to discuss the electrical conduction in the compound. The extrinsic conduction, which takes place below 500 K, has been explained by small polaron hopping mechanism while intrinsic conduction, which takes place above 500 K, has been explained by large polaron band mechanism in view of the values of activation energy and charge carrier mobility in the temperature ranges 300–500 K and 500–1000 K.     

Electrical properties of CdSb single crystals doped with silver

A study is made of the electrical and thermoelectrical properties of CdSb single crystals weakly and heavily doped with silver. The electrical conductivity, the Hall effect and the thermoelectric force in intrinsic conduction are studied on samples of CdSb oriented in the direction of the crystal-lographic axisb. The activation energy of the acceptors is determined as well as the density of states effective mass and their dependence on the temperature and concentration, and the mobility of holes is studied.     

Structural stability and electrical conductivity of amorphous Ge-metal alloy films

Stable homogeneous amorphous alloy¹ films of Ge with different concentrations of Al, Cu and Fe have been prepared by the simultaneous vapor deposition technique. Ge-Metal films are amorphous up to a concentration of ～ 40 at.% Al, ～ 20 at.% Cu and ～ 20 at.% Fe. The cyclic annealing and crystallization temperature of these films show that whereas Al increases the stability of the amorphous phase, the addition of Cu and Fe decreases it. The electrical resistivity decreases gradually with increasing Al content. In contrast, a rapid decrease in the electrical resistivity is observed for the Ge-Cu and Ge-Fe systems. The thermoelectric power (TEP) of Ge-Cu and Ge-Fe system assumes small values ～ few μV/deg for concentrations greater than few atomic percent. Ge-Al system exhibits large positive thermoelectric power at all compositions. The temperature dependence of the electrical resistivity of these alloy films show that the addition of Cu and Fe to Ge results in a drastic decrease in the activation energy of conduction whereas the addition of Al increases the activation energy. Ge-Al films exhibit intrinsic like conduction in the temperature range 100–300 K. The Ge-Cu and Ge-Fe films exhibit hopping conduction from 100–300 K and the related density of states is up to 100 times larger than in pure a-Ge films.     

Two-carrier conduction in Rb-TCNQ-II

Single crystal electrical resistivity and thermoelectric power (TEP) measurements as a function of temperature are repotted in Rb-TCNQ-II. Results suggest intrinsic conductivity by holes above 360 K with an activation energy of 0.44 eV. Below room temperature conductivity is extrinsic and is due to donors located 0.18 eV below the conduction band.     

Electrical conduction and thermoelectric properties of perovskite-type BaBi1−xSbxO3

To elucidate the thermoelectric properties at high temperatures, the electrical conductivity and Seebeck coefficient were measured at temperatures between 423 K and 973 K for perovskite-type ceramics of BaBi_1?xSb_xO₃ solid solutions with x=0.0–0.5. All the ceramics exhibit p-type semiconducting behaviors and electrical conduction is attributed to hopping of small polaronic holes localized on the pentavalent cations. Substitution of Bi with Sb causes the electrical conductivity σ and cell volume to decrease, but the Seebeck coefficient S to increase, suggesting that the Sb atoms are doped as Sb⁵⁺ and replace Bi⁵⁺, reducing 6s holes conduction from Bi⁵⁺(6s⁰) to Bi³⁺ (6s²). The thermoelectric power factor S ²σ has values of 6×10^?8–3×10^?5 W m^?1 K^?2 in the measured temperature range, and is maximized for an Sb-undoped BaBiO_3?δ, but decreases upon Sb doping due to the decreased σ values.     

Change of absolute thermoelectric power of gold and platinum due to lattice defects

The temperature dependence of the extra-thermoelectric power of gold and platinum after quenching or after plastic deformation was measured in the temperature range from –190°C to 20°C. It was found that dislocations raise the absolute thermoelectric power of gold, whereas vacancies reduce it. In platinum both kinds of defects reduce the absolute value of the thermoelectric power in the whole range of temperatures.Gold was quenched from different temperatures into water and the change of electrical resistivity and of thermoelectric power was simultaneously measured. The extra-thermoelectric powerS varies directly with the concentration of vacancies. Its value is given by the relationS/c=–1·08 V/(grad at. % vac.) The activation energy of the formation of lattice vacancies in gold wasE _F =(0·93±0·14) eV.The analysis of the experimental results was carried out at this institute.     

Thermoelectric power and ac conductivity of A-type Nd2O3

Measurement of thermoelectric power Θ of pressed pellets of A-type Nd₂O₃ from 550 to 1180K and electrical conductivity (σ) at dc, 50 Hz, 1.542 kHz and 3 kHz at different temperatures is reported. It is concluded that electrical conduction at high temperature (T>600K) in this solid is due to positive large polarons in O²⁻ : 2p (valence) band and negative intermediate polarons in Nd³⁺ : 5d (conduction band). The energy band gap of the solid has been found to be 2.44 eV. At low temperatures, conduction by hopping of charge carriers from one impurity centre to another has been predicted.     

Electronic transport and specific heat of 1T-V Se2

The low-temperature thermoelectric power and the specific heat of 1T-V Se₂ (vanadium diselenide) have been reported along with the electrical resistivity and Hall coefficient of the compound. The charge density wave (CDW) transition is observed near 110 K in all these properties. The thermoelectric power has been measured from 15 K to 300 K, spanning the incommensurate and commensurate CDW regions. We observed a weak anomaly at the CDW transition for the first time in the specific heat of V Se₂. The linear temperature dependence of the resistivity and thermoelectric power at higher temperatures suggests a normal metallic behavior and electron–phonon scattering above the CDW transition. The positive thermoelectric power and negative Hall coefficient along with strongly temperature-dependent behavior in the CDW phase suggest a mixed conduction related to the strongly hybridized s–p–d bands in this compound.     

Electrical properties of KTiOPO4 single crystal in the temperature range from −100 °C to 100 °C

The electrical property of a KTiOPO₄ single crystal was studied by means of a dielectric spectroscopy method in the temperature range from −100 to 100 °C. Dielectric dispersion began at a temperature, T_S=−80 °C. It is believed that this dielectric dispersion is related to the ionic hopping conduction, which arises mainly from the jumping of K⁺ ions. The activation energy concerned with hopping conduction is E_a∼0.20 eV above T_S. T_S=−80 °C can be the minimum temperature for the hopping K⁺ ion.     

Electrical conductivity,thermoelectric power and figure of merit of doped Bi-Sb tapes produced by melt spinning technique

Temperature dependence of electrical conductivity and thermoelectric power are presented for In and Pb doped Bi + 8.28 at % Sb quenched tapes between 77 and 300K. The results are explained in terms of model for disordered semiconductors. Analysis of our data on electrical conductivity indicates the presence of a temperature independent part and a strongly temperature dependent part. While theT independent part originates from band conduction, theT dependent component could be understood considering the presence of localized states. Thermoelectric figure-of-merit of these tapes are also measured at 300K, which shows a large enhancement (∼40%) over that reported earlier on thin Bi-Sb films. This suggests that doped Bi-Sb quenched tapes may be considered as a candidate for material in producing economic and light weight thermoelectric devices.     

Structural, electrical and optical properties of TiO2 doped WO3 thin films

TiO₂ doped WO₃ thin films were deposited onto glass substrates and fluorine doped tin oxide (FTO) coated conducting glass substrates, maintained at 500 °C by pyrolytic decomposition of adequate precursor solution. Equimolar ammonium tungstate ((NH₄)₂WO₄) and titanyl acetyl acetonate (TiAcAc) solutions were mixed together at pH 9 in volume proportions and used as a precursor solution for the deposition of TiO₂ doped WO₃ thin films. Doping concentrations were varied between 4 and 38%. The effect of TiO₂ doping concentration on structural, electrical and optical properties of TiO₂ doped WO₃ thin films were studied. Values of room temperature electrical resistivity, thermoelectric power and band gap energy (E_g) were estimated. The films with 38% TiO₂ doping in WO₃ exhibited lowest resistivity, n-type electrical conductivity and improved electrochromic performance among all the samples. The values of thermoelectric power (TEP) were in the range of 23-56 μV/K and the direct band gap energy varied between 2.72 and 2.86 eV.