Two-photon absorption of high-power picosecond pulses in PbWO<Subscript>4</Subscript>, ZnWO<Subscript>4</Subscript>, PbMoO<Subscript>4</Subscript>, and CaMoO<Subscript>4</Subscript> crystals

The nonlinear process of two-photon interband absorption is studied in tungstate and molybdate oxide crystals excited by a sequence of high-power picosecond pulses with a wavelength of 523.5 nm. The transmission of the crystals is measured for the excitation pulse intensity up to 100 GW/cm². The pulse intensity in the crystals initially transparent at a wavelength of 523.5 nm is strongly limited due to two-photon absorption (TPA), and the reciprocal transmission in PbWO₄ and ZnWO₄ crystals reaches 50–60. In all crystals, TPA induces long-lived one-photon absorption, which affects the nonlinear process dynamics and leads to a hysteresis in the dependence of the transmission on the laser excitation intensity. Absorption dichroism manifests itself in a significant difference in the transmission intensities when the principal orthogonal optical axes of the crystals are excited. The TPA coefficients are determined during the excitation of two optical axes of the crystals. TPA coefficients β for the crystals vary over a wide range, namely, from β = 2.4 cm/GW for PbMoO₄ to β = 0.14 cm/GW for CaMoO₄, and the values of β can differ almost threefold when different optical axes of a crystal are excited. Good agreement is achieved between the measured intensities limited by TPA and the estimates calculated from the measured nonlinear coefficients. Stimulated Raman scattering (SRS) upon excitation at a wavelength of 523.5 nm is only detected in two of the four crystals under study. The experimental results make it possible to explain the suppression of SRS by its competition with TPA, and the measured nonlinear coefficients are used to estimate this suppression.     

Kinetics of generation, relaxation, and accumulation of electronic excitations under two-photon interband picosecond absorption in tungstate and molibdate crystals

Under two-photon 523.5 nm interband picosecond laser excitation, we measured the kinetics of induced absorption in PbWO₄, ZnWO₄, and PbMoO₄ crystals with 532 to 633 nm continuous probe radiation. We obtained real-time information about the dynamics of the generation, relaxation, and accumulations of electronic excitations over a wide time range (from picoseconds to hundreds of seconds) and the 77–300 K temperature range. For the studied crystals, exponential temperature-independent growth of the induced absorption (IA) with 60 ns rise time reflects the dynamics of the generation of electronic excitation. The kinetics of the IA exponential growth with temperature-dependent 3.5–11 μs time constants reflect the dynamics of energy migration between neighboring tungstate (molibdate) ions to traps for the studied crystals. The multiexponential relaxation absorption kinetics strongly depend on temperature, and the relaxation decay time of induced absorption increased from tens to hundreds of milliseconds to seconds under crystal cooling from 300 to 77 K. We found that the increase in the laser pump repetition rate (0–10 Hz) leads to the accumulation of electronic excitations. Control of the repetition rate and the number of excitations allowed us to change the relaxation time of the induced absorption by more than two orders of magnitude. Due to accumulation of excitations at 77 K, the absorption relaxation time can exceed 100 s for PbWO₄ and PbMoO₄ crystals. In the initially transparent crystals, two-photon interband absorption (2PA) leads to crystals opacity at the 523 and 633 nm wavelengths. (An inverse optical transmission of the crystals exceeds 50–55 at a 50–100 GW/cm² pump intensity.) Measured at ～1 mW probe radiation of 532 and 633 nm wavelengths, the induced absorption values are comparable with those obtained under two-photon absorption at ～5 kW pump power. An optical 2PA shutter for the visible spectral range is proposed with a variable shutting time from hundreds of microseconds to tens of seconds.     

PbWO<Subscript>4</Subscript> crystal for laser energy accumulation and transformation

The picosecond interband two-photon laser excitation of PbWO₄ crystals at a temperature of 10 K leads to electronic excitation energy accumulation, which results in almost 100% induced absorption in the 450–750 nm spectral range. The relaxation time of this induced absorption exceeds 100 min. The electronic excitation energy accumulated in the PbWO₄ crystal at T = 10 K excites the intrinsic luminescence with a decay time longer than 45 min. The decay kinetics and the spectra of the intrinsic luminescence of the PbWO₄ crystal at a temperature of 10 K were measured under two-photon and single-photon excitation. The luminescence under two-photon and single-photon excitation revealed a difference in the structure of the spectra.     

Spectral and kinetic characteristics of CdI<Subscript>2</Subscript> and CdI<Subscript>2</Subscript>:Pb scintillators

We have studied the effect of lead dopant on the optical absorption, photoluminescence, and x-ray luminescence spectra, and the scintillation characteristics of CdI₂ at room temperature. The crystals for the study were grown by the Stockbarger-Bridgman method. Activation of CdI₂ from the melt by the compound PbI₂ leads to the appearance in the absorption spectra in the near-edge region of an activator band at 395–405 nm, which is interpreted as an A band connected with electronic transitions from the ¹S₀ state to the ³P₁ levels in the Pb²⁺ ion. For x-ray excitation, CdI₂:Pb²⁺ crystals with optimal dopant concentration (∼1.0 mol%) are characterized by a light yield with maximum in the 570–580 nm region that is an order of magnitude higher than for CdI₂ crystals in the 490–500 nm band. For α excitation, the radioluminescence kinetics for cadmium iodide is characterized by a very short (∼0.3 nsec) rise time and fast decay of luminescence, with τ₁ ≈ 4 nsec and τ₂ = 10–76 nsec. Depending on the conditions under which the crystals were obtained, the fast component fraction is 95%–99%. The crystal is characterized by a similar scintillation pulse in the case of excitation by x-ray pulses. The radioluminescence pulse shape for CdI₂:Pb in the decay stage is predominantly exponential, with luminescence decay time constants τ₁ ≈ 10 nsec and τ₂ = 200–250 nsec. This system is characterized by low afterglow, at the level for the Bi₄G₃O₁₂ scintillator. We have demonstrated the feasibility of using CdI₂:Pb as a scintillator for detecting α particles. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 6, pp. 825–830, November–December, 2008.     

Infrared absorption spectra of pure and doped YAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> single crystals

Several weak absorption bands have been observed in the optical absorption spectra of pure and rare-earth-doped YAl₃(BO₃)₄ single crystals in the 3350– 3650 cm⁻¹ wave number region. Two of them, peaking at about 3377 cm⁻¹ and 3580 cm⁻¹ in the 8 K spectra, appear in most of the samples. They are tentatively attributed to the stretching mode of OH⁻ ions incorporated in the crystal during the growth. An additional absorption band at about 5250 cm⁻¹ at 8 K has also been detected in almost all samples. The temperature and polarization dependences of these bands, and their possible origin, are discussed.     

Optical absorption in layered MnGaInS<Subscript>4</Subscript> single crystals

Optical absorption in MnGaInS₄ single crystals has been studied. Direct and indirect optical transitions are found to occur in the range of photon energies of 2.37–2.74 eV and in the temperature range of 83–270 K. The temperature dependence of the band gap has been determined; its temperature coefficients E _gd and E _gi are −5.06 × 10⁻⁴ and −5.35 × 10⁻⁴ eV/K, respectively. MnGaInS4 single crystals exhibit anisotropy in polarized light at the absorption edge; the nature of this anisotropy is explained.     

Kinetics of the transient optical absorption in Li<Subscript>2</Subscript>B<Subscript>4</Subscript>O<Subscript>7</Subscript> and LiB<Subscript>3</Subscript>O<Subscript>5</Subscript> lithium borate crystals

This paper reports on a study of the kinetics of electron tunneling transport between electron and hole centers in Li₂B₄O₇ and LiB₃O₅ lithium borate crystals under the conditions where the mobility of one of the partners in the recombination process is thermally stimulated. A mathematical model has been proposed to describe all specific features in the relaxation kinetics of the induced optical density observed in Li₂B₄O₇ (LTB) and LiB₃O₅ (LBO) nonlinear optical crystals within a broad time interval of 10⁻⁸−1 s after a radiation pulse. The results of calculations have been compared with experimental data on transient optical absorption (TOA) of LTB and LBO crystals in the visible and ultraviolet spectral regions. The nature of the radiation defects responsible for TOA and the dependence of the TOA decay kinetics on temperature, excitation power, and other experimental conditions have been discussed.     

Synchrotron and laser excitation of luminescence in PbWO<Subscript>4</Subscript>:Tb crystals at different temperatures

The effect of temperature on the spectral luminescence characteristics of PbWO₄:Tb³⁺ crystals with synchrotron and laser excitation is studied. If PbWO₄:Tb³⁺ is excited by synchrotron radiation with λ = 88 nm at 300 K, a faint recombination luminescence of the impurity terbium is observed against the matrix luminescence. When the temperature is reduced to 8 K, the luminescence intensity of PbWO₄:Tb³⁺ increases by roughly an order of magnitude and the characteristic luminescence of the unactivated crystal is observed. Excitation of PbWO₄:Tb³⁺ by a nitrogen laser at 300 K leads to the appearance of emission from Tb³⁺ ions. At 90 K, a faint matrix luminescence is observed in addition to the activator emission. The formation of the luminescence excitation spectra for wavelengths of 60–320 nm is analyzed and the nature of the emission bands is discussed.     

Kinetics of electron tunneling transfer in KH<Subscript>2</Subscript>PO<Subscript>4</Subscript> and NH<Subscript>4</Subscript>H<Subscript>2</Subscript>PO<Subscript>4</Subscript> crystals with hydrogen bonds

A model of electron transfer by tunneling between trapped electron and hole centers in crystals with hydrogen bonds under the conditions of thermostimulated mobility of one carrier type in the recombination process has been developed. The proposed model describes all features in the kinetics of induced optical density relaxation observed in nonlinear optical crystals of KH₂PO₄ (KDP) and NH₄H₂PO₄ (ADP) on a wide temporal scale (10⁻⁸–10 s) under pulsed irradiation. The results of model calculations have been compared with experimental data on the photoinduced transient optical absorption (TOA) in KDP and ADP crystals in the visible and UV ranges. The nature of the radiation-induced defects, which account for the TOA, and the dependence of the TOA decay kinetics on the temperature, excitation power, and other experimental conditions have been considered.     

Stimulated Raman scattering of picosecond pulses in a YVO<Subscript>4</Subscript> crystal

Stimulated Raman scattering (SRS) with a picosecond pulse in YVO₄ crystals in a transient state was investigated. The picosecond gain of YVO₄ crystals pumped by a 532-nm laser evaluated by means of the threshold was 16.13 cm/GW.     

Optical spectra and excited state relaxation dynamics of Sm<Superscript>3+</Superscript> in Gd<Subscript>2</Subscript>SiO<Subscript>5</Subscript> single crystal

Single crystals of gadolinium orthosilicate Gd₂SiO₅ containing 0.5 at% and 5 at% of Sm³⁺ were grown by the Czochralski method. Optical absorption spectra, luminescence spectra and luminescence decay curves were recorded for these systems at 10 K and at room temperature. Comparison of optical spectra recorded in polarized light revealed that the anisotropy of this optically biaxial host affects the intensity distribution within absorption and emission bands related to transitions between multiplets rather than the overall band intensity. It has been found that among four bands of luminescence related to the ⁴G_5/2→⁶H_J (J=5/2–11/2) transitions of Sm³⁺ in the visible and near infrared region the ⁴G_5/2 →⁶H_7/2 one has the highest intensity with a peak emission cross section of 3.54×10⁻²¹ cm² at 601 nm for light polarized parallel to the crystallographic axis c of the crystal. The luminescence decay curve recorded for Gd₂SiO₅:0.5 at% Sm³⁺ follows a single exponential time dependence with a lifetime 1.74 ms, in good agreement with the ⁴G_5/2 radiative lifetime τ _rad=1.78 ms calculated in the framework of Judd-Ofelt theory. Considerably faster and non-exponential luminescence decay recorded for Gd₂SiO₅:5 at% Sm³⁺ sample was fitted to that predicted by the Inokuti-Hirayama theory yielding the microparameter of Sm³⁺–Sm³⁺ energy transfer C _da=1.264×10⁻⁵² cm⁶×s⁻¹.     

Nature of low-energy excitations in La<Subscript>1.87</Subscript>Sr<Subscript>0.13</Subscript>CuO<Subscript>4</Subscript> superconducting cuprate

The spectra of the conductivity and dielectric constant of La_1.87Sr_0.13CuO₄ cuprate have been directly measured in the frequency range of 0.3 to 1.2 THz (10–40 cm⁻¹) and the temperature range of 5 to 300 K in the E | c polarization (the electric field vector of radiation is perpendicular to the copper-oxygen planes). Excitation has been observed in the superconducting phase, and its nature has been attributed to the transverse optical excitation of the condensate of Cooper pairs, which appears because Josephson junctions between CuO planes are modulated due to in-plane magnetic and charge stripes. Additional quasiparticle absorption of unknown origin has been detected at frequencies below ≈15 cm⁻¹ at liquid helium temperatures.     

Electronic spectra and phase transitions in thin [N(CH<Subscript>3</Subscript>)<Subscript>4</Subscript>]<Subscript>2</Subscript>CuCl<Subscript>4</Subscript> microcrystals

Optical absorption spectra in thin [N(CH₃)₄]₂CuCl₄ crystals in the thickness range 10 μm ≤ d < 100 μm have been studied. Strengthening of the crystal field has been found with a decrease in the [N(CH₃)₄]₂CuCl₄ crystal size. The reasons for absorption band shifts in the visible region depending on the [N(CH₃)₄]₂CuCl₄ crystal thickness and the manifestation of a size effect in crystals with an incommensurate superstructure are discussed.     

Influence of storage time on laser cleaning of SiO<Subscript>2</Subscript> on Si

The influence of the ‘storage time’ τ_s on the threshold fluence φ_cl and the efficiency in dry laser cleaning is investigated. τ_s denotes the time between the deposition of particles and the cleaning. As a model system we employed silica spheres with diameters of 500 nm and 1500 nm on commercial silicon wafers and single-pulse KrF excimer laser radiation (τ_FWHM=28 ns). For the 1500-nm silica spheres, φ_cl was found to increase from about 65 mJ/cm² to 125 mJ/cm² for storage times of 4 h and 362 h, respectively. For 500-nm silica spheres the increase in the threshold fluence was less than 20% for storage times up to 386 h. Received: 12 July 2002 / Accepted: 12 July 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. E-mail:dieter.baeurle@jku.at     

Electrical characterization of the [N(CH<Subscript>3</Subscript>)<Subscript>4</Subscript>][N(C<Subscript>2</Subscript>H<Subscript>5</Subscript>)<Subscript>4</Subscript>]ZnCl<Subscript>4</Subscript> compound

The [N(CH₃)₄][N(C₂H₅)₄]ZnCl₄ compound has been synthesized by a solution-based chemical method. The X-ray diffraction study at room temperature revealed an orthorhombic system with P2₁2₁2 space group. The complex impedance has been investigated in the temperature and frequency ranges 420–520 K and 200 Hz–5 MHz, respectively. The grain interior and grain boundary contribution to the electrical response in the material have been identified. Dielectric data were analyzed using the complex electrical modulus M ^* for the sample at various temperature. The modulus plots can be characterized by full width at half height or in terms of a non-exponential decay function ϕ(t) = exp[(−t/τ) ^β ]. The detailed conductivity study indicated that the electrical conduction in the material is a thermally activated process. The variation of the AC conductivity with frequency at different temperatures obeys the Almond and West universal law.     

Crystal growth,spectroscopic characterization and laser performance of Nd:Lu<Subscript>0.33</Subscript>Y<Subscript>0.36</Subscript>Gd<Subscript>0.3</Subscript>VO<Subscript>4</Subscript> crystal

A new three-matrix mixed vanadate crystal Nd:Lu_0.33Y_0.36Gd_0.3VO₄ (Nd:LuYGdVO₄) crystal was grown by the Czochralski method. Room temperature absorption and fluorescence spectra of the Nd:LuYGdVO₄ crystals were measured and the spectroscopic parameters were calculated by the Judd-Ofelt theory. The intensity parameters of the Nd:LuYGdVO₄ crystal were Ω₂ = 9.736 × 10⁻²⁰ cm², Ω₄ = 4.179 × 10⁻²⁰ cm², Ω₆ = 8.020 × 10⁻²⁰ cm² and the stimulate emission cross section was 5.3 × 10⁻¹⁹ cm². Diodepumped actively Q-switched and passively Q-switched Nd:LuYGdVO₄ and Nd:Lu_0.14Y_0.86VO₄ lasers at 1.06 μm were demonstrated. The results indicate that, for both actively and passively Q-switched lasers, the Nd:LuYGdVO₄ lasers can generate shorter pulse width with higher peak power than the Nd:Lu_0.14Y_0.86VO₄ lasers at the same cavity conditions.     

Parametric oscillation of high-power 3-THz pulse by synchronously pumped ZnGeP<Subscript>2</Subscript> crystal: Computer simulation

Possible parametric oscillation of 3-THz pulse at synchronous pumping of the ZnGeP₂ crystal by a train of short second-harmonic pulses from the CO₂ laser has been analyzed. Calculation shows that at changing laser pulse duration τ between 4 and 500 ps and correspondingly pumping energy density (0.5–3.5 J cm⁻²) THz pulse peak power varies from 3 to 70MW with maximum at τ =9 ps.     

Large optical nonlinearity in CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> thin films

CaCu₃Ti₄O₁₂ (CCTO) thin films were successfully prepared on LaAlO₃ substrates by pulsed laser deposition technique. We measured the nonlinear optical susceptibility of the thin films using Z-scan method at a wavelength of 532 nm with pulse durations of 25 ps and 7 ns. The large values of the third-order nonlinear optical susceptibility, χ ⁽³⁾, of the CCTO film were obtained to be 2.79×10⁻⁸ esu and 3.30×10⁻⁶ esu in picosecond and nanosecond time regimes, respectively, which are among the best results of some representative nonlinear optical materials. The origin of optical nonlinearity of CCTO films was discussed. The results indicate that the CCTO films on LaAlO₃ substrates are promising candidate materials for applications in nonlinear optical devices.     

Luminescence of PbWO<Subscript>4</Subscript> single crystals doped with fluorine

The influence of fluorine doping on the luminescent properties of lead tungstate, PbWO₄, a scintillating material used in high-energy physics, was studied. Two series of crystals that were grown by the Czochralski method in two different laboratories were investigated. It was shown that the luminescent properties of the fluorine-doped samples were similar although those of the undoped PbWO₄ samples from the different series differed significantly. It was concluded that this was associated with the formation of WO₃F complexes in the fluorine-doped PbWO₄ crystals.     

Optical and Photoelectric Properties of CuGa<Subscript>5</Subscript>Te<Subscript>8</Subscript> Single Crystals and In/<Emphasis Type="Italic">p</Emphasis>-CuGa<Subscript>5</Subscript>Te<Subscript>8</Subscript> Structures

The transmission spectra of CuGa₅Te₈ single crystals grown by the Bridgman method at temperatures of 10–300 K have been measured in the region of their intrinsic absorption edge. The energy-gap width of CuGa₅Te₈ single crystals has been determined, and its temperature dependence has been constructed. Photosensitive, surface-barrier In/p-CuGa₅Te₈ structures were formed for the first time on the basis of the indicated single crystals, and their photoelectric properties were investigated. It is shown that these structures can be used as broad-range photodetectors of natural radiation. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 4, pp. 514–518, July–August, 2005.