含有AlGaAs插入层的InAs/GaAs三色量子点红外探测器

本文报道了采用分子束外延技术制备的三色InAs/GaAs量子点红外探测器. 器件采用nin型结构, 吸收区结构是在InGaAs量子阱中生长含有AlGaAs插入层的InAs量子点, 器件在77 K下的红外光电流谱有三个峰值: 6.3, 10.2和11 μm. 文中分析了它们的跃迁机制, 并且分别进行了指认. 因为有源区采用了不对称结构, 所以器件在外加偏压正负方向不同时, 光电流谱峰值的强度存在一些差异. 不论在正偏压或者负偏压下, 当偏压达到较高值, 再进一步增大偏压时, 都出现了对应于连续态的跃迁峰强度明显下降的现象, 这是由量子点基态与阱外连续态的波函数交叠随着偏压进一步增大而迅速减小导致的.     

采用Al/TaN叠层电极提高Si基Ge PIN光电探测器的性能

金属与Ge材料接触由于存在强烈的费米钉扎效应, 导致金属电极与n型Ge接触引入较大的接触电阻, 限制了Si基Ge探测器响应带宽. 本文报道了在SOI衬底上外延Ge单晶薄膜并制备了不同台面尺度的Ge PIN光电探测器. 对比了电极分别为金属Al和Al/TaN叠层的具有相同器件结构的SOI基Ge PIN光电探测器的暗电流、响应度以及响应带宽等参数. 发现在Al与Ge之间增加一薄层TaN可有效减小n型Ge的接触电阻, 将台面直径为24 μ的探测器在1.55 μ的波 长和-1 V偏压下的3 dB响应带宽提高了4倍. 同时, 器件暗电流减小一个数量级, 而响应度提高了2倍. 结果表明, 采用TaN薄层制作金属与Ge接触电极, 可有效钝化金属与Ge界面, 减轻费米钉扎效应, 降低金属与n-Ge接触的势垒高度, 因而减小接触电阻和界面复合电流, 提高探测器的光电性能.     

采用AI／TaN叠层电极提高Si基GePIN光电探测器的性能

金属与Ge材料接触由于存在强烈的费米钉扎效应,导致金属电极与n型Ge接触引入较大的接触电阻,限制了si基Ge探测器响应带宽．本文报道了在SOI衬底上外延Ge单晶薄膜并制备了不同台面尺度的GePIN光电探测器．对比了电极分别为金属Al和A1／TaN叠层的具有相同器件结构的SOI基GePIN光电探测器的暗电流、响应度以及响应带宽等参数．发现在Al与Ge之间增加一薄层TaN可有效减小n型Ge的接触电阻,将台面直径为24um的探测器在1．55um的波长和-1V偏压下的3dB响应带宽提高了4倍．同时,器件暗电流减小一个数量级,而响应度提高了2倍．结果表明,采用TaN薄层制作金属与Ge接触电极,可有效钝化金属与Ge界面,减轻费米钉扎效应,降低金属与n-Ge接触的势垒高度,因而减小接触电阻和界面复合电流,提高探测器的光电性能．     

Zero bias PIN photodetector based on gradient band distribution and doping gradient profile

Zero bias photodetector which was suitable for top-illuminated and side-illuminated was fabricated. Maximal bandwidth-efficiency product (BEP) value could be achieved when the epitaxial layer structure was optimized. The 3-dB bandwidth of the zero bias was 12.27 GHz, which was numerically above 80% of that maximum value. The measured external quantum efficiency of the photodetector was 17% at the zero bias and 1550 nm. The dark current of the photodetector with 12-μm diameter was less than 9 × 10⁻⁸ A at a reverse bias of 0.1 V. The influence of doping gradient profile on photodetector performance was illustrated by simulation comparison. The important aspects of the design of the high-speed low-bias photodetector were explained. The phenomenon of the photodetector at the reverse bias which was not the higher the better was explained. The improvement in performance of the photodetector was discussed. The fabrication process and the testing process were described in detail.     

Study of period number effect in the superlattice infrared photodetector

Superlattices have been demonstrated previously by our group in the design of the multicolor infrared photodetector. In general, the period number of the superlattice may be up to several dozens. In this paper, we have investigated the performance of the infrared photodetectors especially with 3, 5 and 15 periods. The detector structure contains a thick blocking barrier embedded between two superlattices with different period numbers but with the same well and barrier widths. This double-superlattice structure shows switchable spectral responses between two spectral regions by the voltage polarities. The photoresponse in each spectral region is also tunable by the magnitude of the applied voltage. The voltage-dependent behavior reveals the photoelectron relaxation and transport mechanism in the superlattice miniband. Superlattice with few periods has high electron group velocity, less relaxation effect and less collection efficiency. Therefore the superlattice with few periods may have better responsivity and narrower photoresponse range than the one with many periods. Based on the experimental results of our devices, it is observed that the superlattice with fewer periods has better detectivity, responsivity, wider range of the operational temperature, and more flexible miniband engineering than the conventional multiple quantum well infrared photodetector.     

在Si衬底上自组装生长Ge量子点研究进展

在Si衬底上自组装生长纳米尺度的Ge量子点，由于三维量子限制效应的贡献，能够在能带结构上对Si、Ge天然材料的间接带特性实施准直接带结构的改性，使激子行为和带间复合跃迁得到大幅度增强，同时Ge量子点的可控有序相关排列还有助于发展新一代的Si基电子波量子器件．文章回顾了自20世纪80年代末至今Ge／Si量子点生长研究的重要进展，对其潜在的重要应用作出了评述．结合作者自己的研究结果，着重介绍了Ge量子点的生长动力学及其形态的演变过程，指出自组装生长的Ge／Si量子点属Ⅱ型能带结构，其发光效率比一维量子阱有很大增强．探讨了用模板衬底实现对Ge量子点尺寸和分布的有序可控生长方法与途径．     

Bolometric effect in a waveguide-integrated graphene photodetector

Graphene is an alternative material for photodetectors owing to its unique properties.These include its uniform absorption of light from ultraviolet to infrared and its ultrahigh mobility for both electrons and holes.Unfortunately,due to the low absorption of light,the photoresponsivity of graphene-based photodetectors is usually low,only a few milliamps per watt.In this letter,we fabricate a waveguide-integrated graphene photodetector.A photoresponsivity exceeding0.11 A·W ~(-1) is obtained which enables most optoelectronic applications.The dominating mechanism of photoresponse is investigated and is attributed to the photo-induced bolometric effect.Theoretical calculation shows that the bolometric photoresponsivity is 4.6 A·W ~(-1).The absorption coefficient of the device is estimated to be 0.27 dB·μm ~(-1).     

Recent progress of ZnMgO ultraviolet photodetector

The ultra-violet(UV) detection has a wide application in both civil and military fields.ZnO is recognized as one of ideal materials for fabricating the UV photodetectors due to its plenty of advantages,such as wide bandgap,low cost,being environment-friendly,high radiation hardness,etc.Moreover,the alloying of ZnO with MgO to make ZnMgO could continually increase the band gap from ~ 3.3 eV to ~ 7.8 eV,which allows both solar blind and visible blind UV radiation to be detected.As is well known,ZnO is stabilized in the wurtzite structure,while MgO is stabilized in the rock salt structure.As a result,with increasing the Mg content,the crystal structure of ZnMgO alloy will change from wurtzite structure to rock salt structure.Therefore,ZnMgO photodetectors can be divided into three types based on the structures of alloys,namely,wurtzite-phase,cubic-phase and mixed-phase devices.In this paper,we review recent development and make the prospect of three types of ZnMgO UV photodetectors.     

Energy transfer ultraviolet photodetector with 8-hydroxyquinoline derivative-metal complexes as acceptors

We choose 8-hydroxyquinoline derivative-metal complexes(Beq,Mgq,and Znq) as the acceptors(A) and 4,4',4-tri-(2-methylphenyl phenylamino) triphenylaine(m-MTDATA) as the donor(D) respectively to study the existing energy transfer process in the organic ultraviolet(UV) photodetector(PD),which has an important influence on the sensitivity of PDs.The energy transfer process from D to A without exciplex formation is discussed,differing from the working mechanism of previous PDs with Gaq[Zisheng Su,Wenlian Li,Bei Chu,Tianle Li,Jianzhuo Zhu,Guang Zhang,Fei Yan,Xiao Li,Yiren Chen and Chun-Sing Lee 2008 Appl.Phys.Lett.93 103309)]and REq[J.B.Wang,W.L.Li,B.Chu,L.L.Chen,G.Zhang,Z.S.Su,Y.R.Chen,D.F.Yang,J.Z.Zhu,S.H.Wu,F.Yan,H.H.Liu,C.S.Lee 2010 Org.Electron.111301]used as an A material.Under 365-nm UV irradiation with an intensity of 1.2 mW/cm~2,the m-MTDATA:Beq blend device with a weight ratio of 1:1 shows a response of 192 mAAV with a detectivity of 6.5 × 10~(11) Jones,which exceeds those of PDs based on Mgq(146 mA/W) and Znq(182 mA/W) due to better energy level alignment between m-MTDATA/Beq and lower radiative decay.More photophysics processes of the PDs involved are discussed in detail.     

Detection of a directly modulated terahertz light with quantum-well photodetector

We demonstrate a wireless transmission link at 3.9 THz over a distance of 0.5 m by employing a terahertz （Hz） quantum-cascade laser （QCL） and a THz quantum-well photodetector （QWP）. We make direct voltage modulation of the THz QCL and use a spectral-matched THz QWP to detect the modulated THz light from the laser. The small signal model and a direct voltage modulation scheme of the laser are presented. A square wave up to 30 MHz is added to the laser and detected by the THz detector. The bandwidth limit of the wireless link is also discussed.     

以弱p型为有源区的新型p-n结构GaN紫外探测器

提出了以弱p型（p^－-GaN）为有源区的p-n结构GaN紫外探测器.由于弱p型层的载流子浓度较低,很容易增加耗尽区的宽度,从而可以增加器件的量子效率.通过模拟计算,研究了金属与p^－-GaN层的肖特基接触势垒高度、p^－-GaN层厚度等参数对器件性能的影响.研究结果表明,降低金属与p^－-GaN层的接触势垒高度、适当减小p^－-GaN层厚度能够实现有源层方向单一的内建电场,从而提高器件的量子效率.要制备出 关键词： 弱p型GaN 紫外探测器 量子效率     

基于谐振腔增强型石墨烯光电探测器的设计及性能分析

提出了一种具有超薄有源层的谐振腔增强型石墨烯光电探测器的设计方法,利用谐振腔结构可以将光场限制在腔内,有效增强探测器的吸收.通过研究谐振腔内光场谐振条件及谐振模式下探测器响应度增强的机理,建立了驻波效应下谐振腔增强型石墨烯光电探测器光吸收模型,仿真分析谐振腔反射镜反射率、谐振腔腔长对于腔内光场增强器件性能的影响.理论分析表明,谐振腔增强型石墨烯光电探测器在850 nm处响应度可达0.5 A/W,相比无腔状态下提高了32倍;半高全宽为10 nm.采用谐振腔结构能够提高石墨烯光电探测器件的光电响应,为解决光电探测器响应度与响应速度之间的相互制约关系提供了途径.     

Double-peaked decay of transient photovoltage in nanoporous ZnO/n-Si photodetector

In the present work,a nanoporous ZnO/n-Si structure has been proposed as a new type infrared photodetector.Triggered by one laser pulse with wavelength of 1064 nm,this structure exhibits a double-peak decay of transient photovoltage.Also,the time interval between these two peaks increases linearly with the increase of irradiated pulsed energy,indicating the promising application of this hetero-junction in photo-energy detection of infrared pulsed laser.A possible mechanism for this particular photoresponse has been discussed.     

Improvement of sensitivity of graphene photodetector by creating bandgap structure

Graphene has aroused large interest in optoelectronic applications because of its broad band absorption and ultrahigh electron mobility. However, the low absorption of 2.3% seriously limits its photoresponsivity and restricts the relevant applications. In this paper, a method to enhance the sensitivity of graphene photodetector is demonstrated by introducing electron trapping centers and creating a bandgap structure in graphene. The carrier lifetime obviously increases, and more carriers are collected by the electrodes. Compared with intrinsic graphene detector, the defective graphene photodetector possesses high photocurrent and low-driving-voltage, which gives rise to great potential applications in photodetector area.     

Design and fabrication of multi-channel photodetector array monolithic with arrayed waveguide grating

We have provided optical simulations of the evanescently coupled waveguide photodiodes integrated with a 13-channels AWGs. The photodiode could exhibit high internal efficiency by appropriate choice of layers geometry and refractive index. Aseamless joint structure has been designed and fabricated for integrating the output waveguides of AWGs with the evanescently coupled waveguide photodiode array. The highest simulation quantum efficiency could achieve 92% when the matching layer thickness of the PD is 120 nm and the insertion length is 2 μm. The fabricated PD with 320-nm-thick matching layer and 2-μm-length insertion matching layer present a responsivity of 0.87 A/W.     

Design of low-noise photodetector with a bandwidth of130 MHz based on transimpedance amplification circuit

A low-noise photodetector is a basic tool for the research of quantum information processing. We present a specially designed low-noise photoelectric detector with a bandwidth of 130 MHz, using a transimpedance amplification circuit. Based on the detailed calculation of the dependence on each parameter of the detector,a useful method of how to design a low-noise and broadband photodetector is provided. When the optical power is between 1.0 and 16 m W, the photodetector has a good linear response to the injected light. Its electronics noise power is below-77 d Bm, which is within the whole bandwidth. When the incident light power is 2 m W, the output noise powers are 10.0, 8.0, and 6.0 d B higher than the corresponding electronics noise within the bandwidth of 1–50, 50–90, and 90–130 MHz, respectively, which is in good agreement with the theoretical prediction.Thus, this photoelectric detector could have good application prospects in quantum communication and an optical cavity locking system.     

Improving the performance of a far-infrared quantum-ring-based photodetector utilizing asymmetric multi-barrier resonant tunneling

In this paper, a novel structure for quantum ring inter-subband photodetectors (QRIP) is proposed to reduce its dark current. Some additional layers including asymmetric multi-barrier resonant tunneling (AMBRT) in absorption region layers are exploited to provide near unity tunneling probability for generated photocurrents and completely reject thermally generated electrons. AMBRT structure consists of three asymmetric AlGaAs barriers and two InGaAs wells which are designed for operation wavelength of generated photocurrents by absorption of 20 μm. Simulation results show that AMBRT can considerably reduce the dark current compared to previously proposed resonant tunneling structure about three orders of magnitude. As a consequent, higher specific detectivity for AMBRT-QRIP is obtained in the order of ∼10¹¹ cm Hz^1/2/W at 100 K.     

Improving the performance of a GaAs nanowire photodetector using surface plasmon polaritons

GaAs nanowires (NWs) are ideal materials for preparing near-infrared photodetectors owing to their high charge carrier mobility and direct band gap. Although the performance of GaAs NW photodetectors can be enhanced by surface passivation or doping, it still cannot meet the requirement for applications. In this paper we propose a method to greatly improve the performances of GaAs NW photodetectors by hot-hole injection via surface plasmon polaritons. In this case, the responsivity of a single GaAs NW photodetector is increased by a fact of 3.2 to 6.56 A· W^-1 by attaching capsule-like Au nanoparticles to its surface. This research uses an efficient route to improve the NW photocurrent, which is also important for the development of a high-performance near-infrared NW photodetecor.     

高速高饱和单行载流子光探测器的设计与分析

设计了一种In P基的背入射台面结构的单行载流子光探测器.通过在吸收层中采取高斯型掺杂界面及引入合适厚度和掺杂浓度的崖层,使得光探测器同时具备了高速和高饱和电流特性.理论分析表明,在光敏面为14μm2、反向偏压为2 V条件下,该器件的3 d B带宽可达58 GHz,直流饱和电流高达158 m A.在大功率光注入条件下,详细分析了光探测器带宽降低和电流饱和现象,得出能带偏移和电场坍塌是其根本原因的结论.     

Facile sensitizing of PbSe film for near-infrared photodetector by microwave plasma processing

High quality PbSe film was first fabricated by a thermal evaporation method, and then the effect of plasma sensitization on the PbSe film was systemically investigated. Typical detectivity and significant photosensitivity are achieved in the PbSe-based photodetector, reaching maximum values of 7.6×10⁹ cm·Hz^1/2/W and 1.723 A/W, respectively. Compared with thermal annealing, plasma sensitization makes the sensitization easier and significantly improves the performance.