Carrier-diffusion-limited remote optical addressing of single quantum dots

We present a scheme for remotely addressing single quantum dots (QDs) by means of near-field optical microscopy that simply makes use of the polarization of light. A structure containing self-assembled CdTe QDs is covered with a thin metal film presenting sub-wavelength holes. When the optical tip is positioned some distance away from a hole, surface plasmons in the metal coating are generated which, by turning the polarization plane of the excitation light, transfer the excitation towards a chosen hole and induce emission from the underlying dots. In addition, our procedure gives valuable insight into the diffusion of photo-excited carriers in the QD plane that can put limits to the addressing scheme.     

Absorption spectroscopy of single InAs self-assembled quantum dots

Excitonic transitions of single InAs self-assembled quantum dots were directly measured at 4.2 K in an optical transmission experiment. We use the Stark effect in order to tune the exciton energy of a single quantum dot into resonance with a narrow-band laser. With this method, sharp resonances in the transmission spectra are observed. The oscillator strengths as well as the homogeneous line widths of the single-dot optical transitions are obtained. A clear saturation in the absorption is observed at modest laser powers.     

Phonons in Ge/Si quantum dot structures: influence of growth temperature

In this paper we present the results of a Raman study of Ge/Si quantum dot (QD) superlattices grown with different thicknesses of a Si interlayer and at different substrate temperatures. The built-in strain and atomic intermixing in the QDs are deduced from an analysis of optical phonon frequencies of the QDs obtained from Raman spectra of the structures.     

Theory of excitons, charged excitons, exciton fine-structure and entangled excitons in self-assembled semiconductor quantum dots

We show how the atomistic pseudopotential many-body theory of InGaAs/GaAs addresses some important effects, including (i) the fine-structure splittings (originating from interband spin exchange), (ii) the optical spectra of charged quantum dots and (iii) the degree of entanglement in a quantum dot molecule.     

Vibrational spectroscopy of InAs and AlAs quantum dot structures

In this paper we present an experimental comparative study of InAs/AlAs periodical structures with InAs and AlAs quantum dots (QDs) by means of infrared and Raman spectroscopies. The first observation of optical phonons localized in InAs and AlAs QDs using infrared spectroscopy is demonstrated. Confined optical phonon frequencies of the QDs measured by means of Raman scattering are compared with those deduced from the analysis of infrared spectra performed in the framework of the dielectric function approximation.     

Energy-selective charging of type-II GaSb/GaAs quantum dots

The hole confinement in type-II self-organized GaSb/GaAs quantum dots (QDs) was investigated by combining optical excitation and time-resolved capacitance spectroscopy. The experimental results indicate energy-selective charging even for type-II QDs. With increasing excitation energy the apparent hole activation energy decreases, which is attributed to light absorption in sub-ensembles of QDs with decreasing hole localization. The large localization energy of about 450 meV and the possibility of optical-multiplexing makes type-II GaSb/GaAs QDs a potential material system for QD memory concepts.     

Polaron relaxation dynamics in InAs/GaAs self-assembled quantum dots

Polaron decay in n-type InAs quantum dots has been investigated using energy dependent, mid-infrared pump–probe spectroscopy. By studying samples with differing ground state to first excited state energy separations the relaxation time has been measured between 40 and 60 meV. The low-temperature decay time increases with increasing detuning between the pump energy and the optical phonon energy and is maximum (55 ps) at 56 meV. From the experimentally determined decay times we are able to extract a low-temperature optical phonon lifetime of 13 ps for InAs QDs. We find that the polaron decay time decreases by a factor of 2 at room temperature due to the reduction of the optical phonon lifetime.     

Gain and threshold properties of InGaAsN/GaAsN material system for 1.3-μm semiconductor lasers

The gain properties and valence subbands of InGaAsN/GaAsN quantum-well structures are numerically investigated with a self-consistent LASTIP simulation program. The simulation results show that the InGaAsN/GaAsN has lower transparency carrier density than the conventional InGaAsP/InP material system for 1.3-μm semiconductor lasers. The material gain and radiative current density of InGaAsN/GaAsN with different compressive strains in quantum well and tensile strains in barrier are also studied. The material gain and radiative current density as functions of strain in quantum well and barrier are determined. The simulation results suggest that the laser performance and Auger recombination rate of the 1.3-μm InGaAsN semiconductor laser may be markedly improved when the traditional GaAs barriers are replaced with the AlGaAs graded barriers.     

Optical spectroscopy of single InAs/InP quantum dots around λ=1.55 μm

We discuss the preparation and spectroscopic characterisation of a single InAs/InP quantum dot suitable for long-distance quantum key distribution applications around λ=1.55 μm. The dot is prepared using a site-selective growth technique which allows a single dot to be deposited in isolation at a controlled spatial location. Micro-photoluminescence measurements as a function of exciton occupation are used to determine the electronic structure of the dot. Biexciton emission, shell filling and many-body re-normalization effects are observed for the first time in single InAs/InP quantum dots.     

Wave function mapping of self-assembled quantum dots by capacitance spectroscopy

We use frequency-dependent capacitance–voltage spectroscopy to study the dynamic charging of self-assembled InAs quantum dots. With increasing frequency, the AC charging becomes suppressed, beginning with the low-energy states. By applying an in-plane magnetic field, we generate an additional magnetic confinement that alters the tunneling barrier and hence the charging dynamics. In traveling through the potential barrier, the electrons acquire an additional momentum k₀, proportional to the magnetic field B. As the tunneling is enhanced, when k₀ matches the maximum of the electronic wave function Ψ (in momentum representation), we are able to map out the shape of Ψ by varying B.     

Highly efficient radiative recombination of electron–hole pairs localized at compound semiconductor quantum dots embedded in Si

We have studied the optical properties of compound semiconductor quantum dots (CSQDs) embedded in Si. Both photoluminescence and electroluminescence spectra were found to be associated with an inhomogeneously broadened band in the near-infrared. A long decay lifetime of luminescence was observed, which is in support of an indirect transition in both k- and real-space. Strong localization of electron–hole pairs was found to occur due to a deep potential well created by the built-in electric dipole at the III–V/Si interface. A Si-based light-emitting diode with GaSb-CSQDs in the active layer showed a high value of quantum efficiency. Light amplification was also observed under pulsed laser excitation.     

Enhanced exciton–LO phonon coupling in doped quantum dots

We present photoluminescence measurements under strong magnetic field done on a sample with charged (n-doped) quantum dots. We have shown that the broadening of the luminescence line does not give a measure of the QDs size dispersion, and that the coupling of electron/hole pairs with LO phonons is greatly enhanced, because of the presence of the ionised impurities nearby the charged dots.     

Spectroscopy on single columns of vertically aligned InAs quantum dots

We have investigated the carrier relaxation dynamics in single columns of tenfold stacked vertically aligned InAs quantum dots by micro-photoluminescence measurement. The excitation spectrum in the stacked dots is much different from that in the single dot characterized by the existence of a zero-absorption region and sharp multiple phonon emission lines. We have observed a broad continuum absorption far below the wetting layer band edge in the spectrum of the single columns although we have confirmed the existence of a zero-absorption region in the same sample with reduced number of dot layers to almost single, realized by surface etching. The broad absorption feature suggests the existence of additional carrier relaxation channels through non-resonant tunneling between the dots.     

Non-perturbative optical response of a “fluctuating” single quantum dot

We present a model that treats the inter-band optical transitions within a non-perturbative framework which incorporates .both the coherent coupling to light and the incoherent coupling to different reservoirs. It allows us to calculate the photoluminescence line shape and also to simulate its excitation experiments on actual single dots.     

Influence of strain on the magneto-exciton in single and coupled InP/GaInP quantum disks

We investigated theoretically the influence of strain on the exciton in both single and three vertically coupled self-assembled quantum dot systems in the presence of a perpendicular magnetic field. For the single disk, we find that the heavy-hole exciton is the ground state, while for the system of three stacked disks, the light hole state was found to be lower in energy. Results for the diamagnetic shift were compared with experimental results.     

Mid-infrared luminescence from coupled quantum dots and wells

Coupled nanostructures have been developed in the InAs/InSb/GaSb materials system in order to extend the emission wavelength further into the infrared, beyond 2 μm. The samples studied consist of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix, in which the coupling has been altered by changing the thickness of a GaSb spacer layer. The overall transition energy of the combined dot–well system is generally reduced with respect to the dots and well only but the dependence on spacer thickness is more complex than that expected from a simple envelope function model.     

GaN quantum dots by molecular beam epitaxy

The conditions to grow GaN quantum dots (QDs) by plasma-assisted molecular beam epitaxy will be examined. It will be shown that, depending on the Ga/N ratio value, the growth mode of GaN deposited on AlN can be either of the Stranski–Krastanow (SK) or of the Frank–Van der Merwe type. Accordingly, quantum wells or QDs can be grown, depending on the desired application. In the particular case of modified SK growth mode, it will be shown that both plastic and elastic strain relaxation can coexist. Growth of GaN QDs with N-polarity will also be discussed and compared to their counterpart with Ga polarity.     

Surface integral determination of built-in electric fields and analysis of exciton binding energies in nitride-based quantum dots

We present a simple analytical approach to calculate the built-in strain-induced and spontaneous piezoelectric fields in nitride-based quantum dots (QDs) and then apply the method to describe the variation of exciton, biexciton and charged exciton energy with dot size in GaN/AlN QDs. We first present the piezoelectric potential in terms of a surface integral over the QD surface, and confirm that, due to the strong built-in electric field, the electrons are localised near the QD top and the holes are localised in the wetting layer just below the dot. The strong localisation and smaller dielectric constant results in much larger Coulomb interactions in GaN/AlN QDs than in typical InAs/GaAs QDs, with the interaction between two electrons, J_ee, or two holes, J_hh, being about a factor of three larger. The electron–hole recombination energy is always blue shifted in the charged excitons, X⁻ and X⁺, and the biexciton, and the blue shift increases with increasing dot height. We conclude that spectroscopic studies of the excitonic complexes should provide a useful probe of the structural and piezoelectric properties of GaN-based QDs.     

Growth of high-density InGaSb quantum dots on silicon atoms irradiated GaAs substrates

We discuss a technique that allows us to grow high-density GaSb and InGaSb quantum dots (QDs) on (0 0 1)-oriented GaAs substrates. We study the use of Si atom irradiation on the substrate surface as an anti-surfactant before the QDs fabrication. It is clear that the densities of GaSb and InGaSb QDs are drastically enhanced with the Si atom irradiation. Photoluminescence intensities from these QDs are also increased with the Si atom irradiation. These results indicate that the Si atom irradiation technique is useful to improve the properties of the Sb-based QDs.