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1.
A limited number of reports exists in the literature concerning the systematic study of the structural and optical properties of ZnO thin films, produced by pulsed laser ablation, in correlation with the deposition parameters adopted. In this paper we present a characterization of a sample prepared by this technique and studied by photoelectron spectroscopy and X-ray diffraction. The dielectric function of both target and films has been deduced by reflection electron energy loss spectroscopy.  相似文献   

2.
Laser micromachining on 1000 nm-thick gold film using femtosecond laser has been studied. The laser pulses that are used for this study are 400 nm in central wavelength, 150 fs in pulse duration, and the repetition rate is 1 kHz. Plano-concave lens with a focal length of 19 mm focuses the laser beam into a spot of 3 μm (1/e2 diameter). The sample was translated at a linear speed of 400 μm/s during machining. Grooves were cut on gold thin film with laser pulses of various energies. The ablation depths were measured and plotted. There are two ablation regimes. In the first regime, the cutting is very shallow and the edges are free of molten material. While in the second regime, molten material appears and the cutting edges are contaminated. The results suggest that clean and precise microstructuring can be achieved with femtosecond pulsed laser by controlling the pulse energy in the first ablation regime.  相似文献   

3.
Metal thin film ablation with femtosecond pulsed laser   总被引:2,自引:0,他引:2  
Micromachining thin metal films coated on glass are widely used to repair semiconductor masks and to fabricate optoelectrical and MEMS devices. The interaction of lasers and materials must be understood in order to achieve efficient micromachining. This work investigates the morphology of thin metal films after machining with femtosecond laser ablation using about 1 μm diameter laser beam. The effect of the film thickness on the results is analyzed by comparing experimental images with data obtained using a two-temperature heat transfer model. The experiment was conducted using a high numerical aperture objective lens and a temporal pulse width of 220 fs on 200- and 500-nm-thick chromium films. The resulting surface morphology after machining was due to the thermal incubation effect, low thermal diffusivity of the glass substrate, and thermodynamic flow of the metal induced by volumetric evaporation. A Fraunhofer diffraction pattern was found in the 500-nm-thick film, and a ripple parallel to the direction of the laser light was observed after a few multiple laser shots. These results are useful for applications requiring micro- or nano-sized machining.  相似文献   

4.
A femtosecond pulsed Ti:sapphire laser (pulse width=120 fs, wavelength=800 nm, repetition rate=1 kHz) was employed to perform laser ablation of 1-m-thick silicon carbide (3CSiC) films grown on silicon substrates. The threshold fluence and ablation rate, useful for the micromachining of the 3CSiC films, were experimentally determined. The material removal mechanisms vary depending on the applied energy fluence. At high laser fluence, a thermally dominated process such as melting, boiling and vaporizing of single-crystal SiC occurs. At low laser fluence, the ablation is a defect-activation process via incubation, defect accumulation, formation of nanoparticles and final vaporization of boundaries. The defect-activation process reduces the ablation threshold fluence and enhances lateral and vertical precision as compared to the thermally dominated mechanism. Helium, as an assistant gas, plays a major role in improving the processing quality and ablation rate of SiC thin films due to its inertness and high first ionization energy. PACS 79.20.Ds; 42.62.Cf; 42.70.Qs; 61.72; 61.46  相似文献   

5.
采用脉冲激光沉积(PLD)方法在Si(100)衬底上制备了NaF薄膜。在激光重复频率2 Hz,能量密度3 J/cm2,本底真空度5×10-5 Pa的条件下,研究衬底温度对薄膜沉积速率及结构的影响。台阶仪分析表明:薄膜的沉积速率随衬底温度增加呈指数函数增加,算出NaF薄膜的反应激活能为48.67 kJ/mol。原子力显微镜分析表明:薄膜致密而光滑,均方根粗糙度为0.553 nm。扫描电镜截面微观形貌分析表明:薄膜呈现柱状结构。X射线衍射分析表明:NaF薄膜为面心立方晶体结构,并具有显著的择优取向;当衬底温度约为400 ℃时,平均晶粒尺寸最大(129.6 nm),晶格微应变最小(0.225%)。  相似文献   

6.
Niobium carbide thin films were prepared by pulsed laser ablation of a stoichiometric NbC target. XeCl (308 nm, 30 ns) and Nd:YAG (266 nm, 5 ns) lasers operating at a repetition rate of 10 Hz were used. Films were deposited on Si (100) substrates at room temperature either in vacuum or in an argon atmosphere (2᎒-1 mbar). Different laser fluences (2, 4 and 6 J/cm2) and different numbers of pulses (1᎒4, 2᎒4 and 4᎒4) were tested. For the first time, NbC films were prepared through a clean procedure without the addition of a hydrocarbon atmosphere. The phase constitution of the films, unit cell size, mean crystallite dimensions and preferred orientation are determined as a function of deposition conditions by X-ray diffraction. Complementary morphological and structural analysis of the films were performed by scanning electron microscopy, atomic force microscopy and Rutherford backscattering spectroscopy.  相似文献   

7.
 采用脉冲激光沉积(PLD)方法在Si(100)衬底上制备了NaF薄膜。在激光重复频率2 Hz,能量密度3 J/cm2,本底真空度5×10-5 Pa的条件下,研究衬底温度对薄膜沉积速率及结构的影响。台阶仪分析表明:薄膜的沉积速率随衬底温度增加呈指数函数增加,算出NaF薄膜的反应激活能为48.67 kJ/mol。原子力显微镜分析表明:薄膜致密而光滑,均方根粗糙度为0.553 nm。扫描电镜截面微观形貌分析表明:薄膜呈现柱状结构。X射线衍射分析表明:NaF薄膜为面心立方晶体结构,并具有显著的择优取向;当衬底温度约为400 ℃时,平均晶粒尺寸最大(129.6 nm),晶格微应变最小(0.225%)。  相似文献   

8.
Nanostructured thin films were deposited by excimer laser ablation of silver targets in controlled atmospheres of He and Ar. The film structural properties were investigated by means of scanning electron microscope and transmission electron microscope imaging. The film growth mechanism was identified as the result of coalescence of nanometric clusters formed during plume flight. Cluster formation involves plume confinement as a consequence of the increased collisional rate among plasma species. Fast photography imaging of the laser-generated silver plasma allowed to identify plasma confinement, shock wave formation and plasma stopping.  相似文献   

9.
Indium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) films have been deposited on glass by rf-sputtering from an ITO target, using Ar plasma and N2 plasma, respectively, and different rf-power. Optical emission spectroscopy (OES) was employed to identify the species present in the plasma and to correlate them with the properties of the ITO and ITON thin films. Emission lines of ionic In could only be detected in N2 plasma, whereas in the Ar plasma additional lines corresponding to atomic In and InO, were detected. The deposition rate of thin films was correlated with the In species, rather than the nitrogen species, emission intensity in the plasma. The higher resistivity and lower carrier concentration of the ITON films, as compared to the respective properties of the ITO films, were attributed to the incorporation of nitrogen, instead of oxygen, in the ITON structure.  相似文献   

10.
Lead sulfide (PbS) nano-structured film has been grown on quartz substrates by the PLD technique. The deposited films were characterized by X-ray diffraction (XRD), selected area electron diffraction (SAED), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Formation of cubic phase of PbS nanocrystals is proven. The absorption and emission spectra were measured for different thicknesses of the films. IV characteristics and photoconductivity of the deposited film were also measured. The results indicate an efficient performance of the deposited films as an optical detector.  相似文献   

11.
Excimer laser ablation of a thin Cr film on a glass substrate was evaluated through detecting acoustic emission arising from the ablation process and observing surface morphology. In the experiment, an acoustic emission transducer was coupled to the sample to acquire acoustic emissions of laser–material interaction and an oscilloscope was used to record the signals. The patterned areas were examined by using an optical microscope. Characteristics of the acoustic emissions were studied through applying a range of signal analysis tools. Several features (e.g., average power, RMS) showed a clear linkage with the ablation mechanism of thin Cr film when varying the fluence of the laser source. Moreover, the damage to the glass substrate was well discriminated by the extracted features. In sum, evaluation of acoustic emissions not only provided a tool to study the ablation mechanisms of the thin metal film but also addressed a monitoring strategy for excimer laser micromachining.  相似文献   

12.
We report that one-dimensional (1D) and two-dimensional (2D) metal thin film gratings can be directly fabricated by interfering Nd-YAG pulsed laser beams (wavelength = 1064 nm, pulse width = 6 ns) incident from the backside of glass substrate. This process utilizes a laser-induced thermo-elastic force which plays a role to detach the film from the substrate. Micro-scale Au transmission gratings with a minimum feature size of 1 μm could be generated by interference-driven periodic detachment. The fabrication of tube-structured patterns as well as stripes was also possible by adjusting the pulse power and this is explained with the effect of film cohesion.  相似文献   

13.
Superhydrophobic polytetrafluoroethylene (PTFE) thin films were obtained by pulsed laser deposition (PLD) technique carried out with KrF excimer laser (λ = 248 nm) of about 1 J/cm2 at a pressure of 1.33 Pa. The samples exhibit high water contact angle of about 170° and the sliding angle smaller than 2°. From studying the surface morphology of the prepared films, it is believed that the nano-scale surface roughness has enhanced the hydrophobic property of the PTFE. The increase of trapping air and reducing liquid-solid contact area due to the rough surface, as suggested by the Cassie-Baxter's model, should be responsible for superhydrophobicity of the PLD prepared films. This study thus provides a convenient one-step method without using wet-process to produce a superhydrophobic surface with good self-cleaning properties.  相似文献   

14.
The ability to machine very small features in a material has a wide range of applications in industry. We ablated holes into thin film of 100 nm thickness made from various metals by femtosecond pulsed laser ablation. Using a Ti:Sapphire laser which supplies a laser pulse of 150 fs duration at central spectrum wavelength of 400 nm, we have produced a series sub-micron holes, whose diameters are less than 200 nm with a focused laser spot of 1.7 μm. We found that the material damage threshold has a great influence on the quality of the produced features. Experimental results shows that the heat-affected zone and the degree of being affected reduce with the increase of threshold value.  相似文献   

15.
Microstructural properties of nano-ionic thin films of gadolinia-doped ceria (GDC) prepared by pulsed laser ablation from sintered targets of gadolinia (5–20 mol%) doped ceria are investigated. The ionic conductivity measurements of the sintered pellets showed a decrease in the activation energy from 1.1 to 0.65 eV for 5 and 30 mol% gadolinia-doped ceria, respectively. The microstructural properties of the GDC films as a function of substrate temperature, oxygen partial pressure, and laser energy show that the films are polycrystalline in the entire range of substrate temperature. The grain size is found to increase with increasing temperature up to 873 K. Further improved crystallinity is noticed for the films grown with oxygen partial pressure of 0.1–0.2 mbar. X-ray diffraction and transmission electron microscopy (TEM) reveal nanocrystalline grains with textured growth along <111> orientation in these films at low substrate temperature and at lower oxygen partial pressure. TEM study shows a uniform distribution of nanocrystal of 8–10 nm for energies ≤200 mJ/pulse, and nanocrystals embedded in a large crystalline matrix of doped ceria for energies in the range 400–600 mJ/pulse. Raman spectroscopy also confirms the defects in these films. The study also reveals that the substrate temperature and oxygen partial pressure could influence preferred orientation, while the laser energy could significantly influence defect concentration in these films. Invited paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006.  相似文献   

16.
Thin films of zinc oxide have been deposited by reactive pulsed laser ablation of Zn and ZnO targets in presence of a radio frequency (RF) generated oxygen plasma. The gaseous species have been deposited at several substrate temperatures, using the on-axis configuration, on Si (1 0 0). Thin films have been characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and infrared spectroscopy. A comparison among conventional PLD and reactive RF plasma-assisted PLD has been performed.  相似文献   

17.
One advantage of the pulsed laser deposition (PLD) method is the stoichiometric transfer of multi-component target material to a given substrate. This advantage of the PLD determined the choice to prepare chalco-genide-based thin films with an off-axis geometry PLD. Ag-As-S and Cu-Ag-As-Se-Tetargets were used to deposit thin films on Si substrates for an application as a heavy metal sensing device. The films were characterized by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM), and electrochemical measurements. The same stoichiometry of the films and the targets was confirmed by RBS measurements. We observed a good long-term stability of more than 60 days and a nearly Nernstian sensitivity towards Pb and Cu, which is comparable to bulk sensors.  相似文献   

18.
《Physics letters. A》2002,302(4):182-189
The gas dynamics of pulsed laser ablation of silicon target in the helium gas ambient is investigated via direct simulation Monte Carlo method with a real physical scale of target-substrate configuration. A shock driven process is clearly observed. It is shown that the interaction of the shock front with the target surface and the vapor front induce significant backward flux of ablated particles and oscillating behavior of vapor front. A confined layer mixed with high density Si and He atoms is formed around the contact front. Its behavior is important to the nanoparticle formation and deposition.  相似文献   

19.
The production of dense arrays of well aligned ZnO nano- and microrods with a controllable distribution of diameters is demonstrated. The rods were grown using a hydrothermal method, on pre-deposited ZnO thin films exhibiting a range of different grain sizes. These template ZnO thin films were deposited by pulsed laser ablation, at 193 nm, in a low background pressure of O2; average grain sizes ranged from 10 nm (room temperature deposition) to 50 nm when deposited at a substrate temperature (Tsub) of 500 °C. The morphology of the ZnO microrod arrays grown onto these ZnO thin films was found to depend on the Tsub used during film deposition. Increasing Tsub resulted in a lower density of larger nanorods, with a more pronounced [0001] alignment. The diameters of the rods produced are typically an order of magnitude greater than the grain size of the template ZnO film. Thus the rods cannot be a direct continuation of the grain structure of the template films. Rather, we suggest that the rod diameter is controlled by the density of sites at which the initial nucleation occurs, which is expected to be higher on the smaller grain size films deposited at lower temperatures. The factor controlling the final size of the rods is thus the available free space into which they can grow, which is smaller at the higher nucleation densities. The increased extent of [0001] texturing of the thin film templates deposited at higher Tsub is proposed as the reason for the improved [0001] alignment of rods grown on these templates. PACS 81.07.De; 81.10.Dn; 52.38.Mf  相似文献   

20.
Interaction of an Nd:YAG laser, operating at 532 nm wavelength and pulse duration of 40 ps, with tungsten-titanium (WTi) thin film (thickness, 190 nm) deposited on single silicon (100) substrate was studied. Laser fluences of 10.5 and 13.4 J/cm2 were found to be sufficient for modification of the WTi/silicon target system. The energy absorbed from the Nd:YAG laser beam is partially converted to thermal energy, which generates a series of effects, such as melting, vaporization of the molten material, shock waves, etc. The following WTi/silicon surface morphological changes were observed: (i) ablation of the thin film during the first laser pulse. The boundary of damage area was relatively sharp after action of one pulse whereas it was quite diffuse after irradiation with more than 10 pulses; (ii) appearance of some nano-structures (e.g., nano-ripples) in the irradiated region; (iii) appearance of the micro-cracking. The process of the laser interaction with WTi/silicon target was accompanied by formation of plasma.  相似文献   

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