Effect of plastic deformation on precipitation in Al-30 wt.% Zn alloy aged at 200 °C

The electron microscopic investigation of an Al-30 wt.% Zn alloy reveals that the plastic deformation of quenched samples substantionally modifies the phase transformation processes examined in the alloy aged at 200°C. Whereas the growth kinetics of metastable precipitates and associated solute diffusion are unaffected by cold rolling the alloy specimens from 9% up to 97·5% reduction in thickness, the rate of all observed transformations is enhanced considerably by prior plastic deformation. A corresponding increase of stored strain energy within the lattice provides namely an additional driving force for the establishment of a new precipitate/matrix interface of higher surface energy on the transformation of a metastable precipitate into a more stable one. The sizes of transforming transition precipitates consequently diminish with an increase of cold work and the respective transformations are thus accelerated.High dislocation density in heavily cold worked alloy also reduces the nucleation barrier for a heterogeneous nucleation on dislocations. The formation of platelike coherent_coh precipitates with internal cubic structure on dislocations is observed followed by the transformation of_coh into spheroidical semicoherent precipitates. The non-uniform distribution of stresses and strains in cold rolled specimens leads to the development of deformation bands in the higher strained regions of even lightly deformed alloy. The direct precipitation of equilibrium precipitates in deformation bands is already observed immediately after cold work analogously to the -allotriomorph formation at grain boundaries.     

New two-color dimer models with critical ground states

We define two new models on the square lattice in which each allowed configuration is a superposition of a covering by white dimers and one by black dimers. Each model maps to a solid-on-solid (SOS) model in which the height field is two dimensional. Measuring the stiffness of the SOS fluctuations in the rough phase provides critical exponents of the dimer models. Using this height representation, we have performed Monte Carlo simulations. They confirm that each dimer model has critical correlations and belongs to a new universality class. In the dimer-loop model (which maps to a loop model) one height component is smooth, but has unusual correlated fluctuations; the other height component is rough. In the noncrossing-dimer model the heights are rough, having two different elastic constants; an unusual form of its elastic theory implies anisotropic critical correlations.     

Spectrum of γ-Fluids: A statistical derivation

The spectrum of massless bosonic and fermionic fluids satisfying the equation of statep=(–1) is derived using elementary statistical methods. As a limiting case, the Lorentz-invariant spectrum of the vacuum (=0,p=–) is deduced. These results are in agreement with our earlier derivation for bosons using thermodynamics and semiclassical considerations.     

Observed difference between the probabilities of recoilless resonance absorptionf′ and reemissionf″ of gamma-quanta in single crystals of Na2[Fe(CN)5NO]·2 H2O

The recoilless absorption probability factor,f, and recoilless reemission,f, both measured on Na₂[Fe(CN)₅NO]·2 H₂O single crystals using the black filter technique, were found to be different. Unexpectedly, the results found weref>f. In the calculation off, selfabsorption in the scatterer, non-ideality of the black filter and the influence of non-resonant scattering processes have all been taken into account. By varying the scattering geometry for the incoming and outgoing -beam relative to the crystallographic axes only a change in the reemitted valuesf _a, f_b, f_c could be detected because of the long lifetime of the excited nucleus (10^–7 s) relative to the lattice vibration frequencies (10¹² Hz).     

Beryllium diffusion across GaAs/(Al,Ga)As heterojunctions and GaAs/AlAs superlattices during MBE growth

Beryllium diffusion during MBE growth of (Al, Ga)As layers, (Al, Ga)As/GaAs heterojunctions and GaAs/AlAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration profiling, in conjunction with transmission electron microscopy. Diffusion times were comparatively short since they were limited to part of the growth sequence, so non-equilibrium effects had a significant influence. The results are consistent with an interstitial-substitutional mechanism in which lattice site incorporation becomes more difficult with increasing band gap enthalpy. Incorporation involves a kick-out reaction which leads to the observed disordering of the superlattices.     

A pulsed surface muon beam andμSR facilities proposed for the UK

The Spallation Neutron Source, SNS, under construction in the United Kingdom offers the possibility of an intense pulsed pion or muon source and aSR facility for condensed matter spectroscopy has been proposed.A design and specification is presented for a pulsed surface muon beam. Features include negligible electron contamination, the possibility of rotating the polarisation and — particularly important — the capability of varying the pulse width. Operation with cloud muons of both charge signs up to 70 MeV/c and with pions up to 200 MeV/c would also be possible. The pulsed nature of the source would allow the full muon intensities to be used forSR experiments. The potential performance is such that an optimised facility would increase the world total muon stop rate for conventional time-differentialSR by an order of magnitude.The majority ofSR applications would benefit simply from the increased intensity, some benefit especially from the frame-length and duty cycle. Emphasis is to be placed on longitudinalSR, on the development of RF techniques (particularly for chemical applications) and onSR in conjunction with synchronous pulsed excitation of the sample. A scheme for the excitation of a certain bandwidth within a high frequencySR spectrum, to display individual spectral lines for instance, is proposed.     

Some properties of topological geons

We investigate the Finkelstein-Misner geons for a non-simply-connected space-time manifold (M, g ₀). We use relations between different Lorentzian structures unequivalent tog ₀ and topological properties ofM given by the Morse theory. It implies that to some pieces of geons we have to associate Wheeler's worm-holes. Geons that correspond to time-orientable Lorentz structures are related tog ₀ by Morse functions that describe the attaching of a handle of index one. In the case of geons associated to time-nonorientable Lorentzian structures, appropriate handles are related to loops along which the notion of time reverses. If we assume electromagnetic properties of geons, then only four species, v, e, p, m, of different geons can exist and geon m has to decay according to mv+p+e.     

Threading dislocations in GaAs on Si grown with ∼1 nm thick Si interlayers

Threading dislocation morphologies and characteristics have been investigated in 3 m thick GaAs films with ultrathin (1 nm) Si interlayers grown by molecular beam epitaxy on tilted (2° toward [110]) Si (001) substrates using cross-sectional transmission electron microscopy. Four sample structures are studied in which different numbers of ultrathin Si layers are grown at different positions in the GaAs film, and the results are compared for samples observed before and after ex situ annealing. In all of the sample structures, some mixed-type dislocations are clearly blocked by the Si interlayers, although some of them pass through these layers, resulting in propagation of their threading dislocations to the sample surface. After annealing at 900 °C for 10 s or 800 °C for 30 min, the interactions of the dislocations with the interlayers are enhanced, and there is an increase in the number of dislocations which are bent along the 110 directions at the positions of the Si barrier layers. However, a considerable number of dislocations still escape from the Si barriers by gliding on {111} slip planes during annealing. Moreover, ex situ annealing generates new edge-type dislocations through interactions between moving threading dislocations. The nature of the dislocations that cross the Si barriers is especially discussed.     

Exact exponent for the number of persistent spins in the zero-temperature dynamics of the one-dimensional Potts model

For the zero-temperature Glauber dynamics of theq-state Potts model, the fractionr(q, t) of spins which never flip up to timet decays like a power lawr(q, t)t ^–(q) when the initial condition is random. By mapping the problem onto an exactly soluble one-species coagulation model (A+AA) or alternatively by transforming the problem into a free-fermion model, we obtain the exact expression of (q) for all values ofq. The exponent (q) is in general irrational, (3)=0.53795082..., (4)=0.63151575..., ..., with the exception ofq=2 andq=, for which (2)=3/8 and ()=1.     

Determination of in-plane lattice parameters of InAs/AlAs strained-layer superlattices by X-ray precession camera

A determination of the lattice parametersa andb of InAs/AlAs short-period strained-layer superlattices grown by Atomic Layer Molecular Beam Epitaxy (ALMBE) on GaAs(001) substrates has been performed by means of an X-ray precession camera using copper radiation. Spots belonging to the superlattice are clearly differentiated from those of the substrate, which confirms that they are partly decoupled from each other. It was also possible to resolve the lattice spots of InAs or In_0.8Ga_0.2 As decoupling buffer layers grown between the substrate and the superlattice. This technique proves to be very useful to characterize, in a very short time and with a reasonable resolution, highly mismatched epitaxial systems in which lattice parameters parallel to the interface play a crucial role in the understanding of the growing behaviour.     

Limitations of the geometrodynamic clock

We examine sources of error in the geometrodynamic (or Marzke-Wheeler) clock, and choose parameters to minimize the total error. In theories with time-varying masses, there is an unavoidable minimum error. For a human-scale clock, the dominant error is from quantum uncertainty in the photon location.     

Damage created by high-current-density implants of phosphorus into 〈100〉 and 〈111〉 silicon wafers

The damage left by high-current-density, 9 A/cm², implants of 120 keV phosphorus into 100 and 111 silicon oriented substrates was investigated as a function of the fluence in the range 4×10¹⁵–1.5×10¹⁶/cm². The samples were analyzed by 2 MeV He⁺ channeling and transmission electron microscopy. Initially a buried amorphous layer forms at low fluences until the wafer temperature saturates at 450 °C at a fluence of 4.5×10¹⁵/cm². As the fluence is further increased ion-assisted regrowth of this initial buried amorphous layer takes place and is 2 to 2.5 times faster (with respect to ion fluence) for 100 substrates than for 111 substrates. At higher fluences, most of the residual damage is located at a depth equal to the sum of the projected range and of the straggling. In the regrown layers twins are found in both orientations, and in some cases a hexagonal silicon phase is present at high fluences. The results are compared with the ion assisted regrowth of amorphous layers at well defined temperatures in the 250°–400 °C range.     

Quantum mechanics and the direction of time

In recent papers the authors have discussed the dynamical properties of large Poincaré systems (LPS), that is, nonintegrable systems with a continuous spectrum (both classical and quantum). An interesting example of LPS is given by the Friedrichs model of field theory. As is well known, perturbation methods analytic in the coupling constant diverge because of resonant denominators. We show that this Poincaré catastrophe can be eliminated by a natural time ordering of the dynamical states. We obtain then a dynamical theory which incorporates a privileged direction of time (and therefore the second law of thermodynamics). However, it is only in very simple situations that this time ordering can be performed in an extended Hilbert space. In general, we need to go to the Liouville space (superspace) and introduce a time ordering of dynamical states according to the number of particles involved in correlations. This leads then to a generalization of quantum mechanics in which the usual Heisenberg's eigenvalue problem is replaced by a complex eigenvalue problem in the Liouville space.     

Effects of annealing temperature on the alloying behavior of the AuGe-GaAs〈100〉 interface

UV(He I) and X-ray photoelectron spectroscopies (UPS and XPS) were used to examine the alloying behavior of AuGe ohmic contacts to silicon-doped 100 oriented n-type GaAs substrates. The reacted interface was then revealed by Ar ion sputter depth profiling at room temperature and after annealing in ultra high vacuum at 300°, 500°, or 700°C. The indiffusion of Au and the outdiffusion of Ga and As are evident. Instead of obtaining a maximum peak of the Ge profile on annealing in forming gas, we observed an increase of Ge indiffusion with temperature. The Au indiffusion results in a decrease in the Au 5d splitting and a shift of both levels to higher binding energy. Au-Ga alloy formation is indicated by the Au 4f levels, and is further supported by the observation of the metallic Ga peak. It has been concluded that the sample annealed at 500°C forms the Au-Ga alloy and the compound of As containing Ge more easily than the samples annealed at 300° or 700°C. This result is consistent with the observations of low contact resistance at the annealing temperature of 500°C for AuNiGe ohmic contacts to n-type GaAs.     

Synthesis of epitaxial γAl<Subscript>2</Subscript>O<Subscript>3</Subscript> thin films by thermal oxidation of AlN/sapphire(0001) thin films

The synthesis of epitaxial Al₂O₃ films by oxidizing AlN/sapphire(0001) films was investigated in a synchrotron X-ray scattering experiment. Porous Al₂O₃ nucleates on the surface of the AlN film when annealed above 700 °C in oxygen ambient. As the annealing temperature increases above 900 °C, the entire AlN film is oxidized into an epitaxial Al₂O₃ film that has a cubic spinel structure. With increasing oxidation temperature, more oxygen atoms are incorporated into the oxide structure, resulting in denser oxide films with a larger lattice constant. The crystal domain size increases from 50 Å to 210 Å, suggesting that the initial nucleation of the Al₂O₃ crystalline domains is followed by gradual grain growth. PACS 61.10.Eq; 81.65.Mq; 68.55.Jk; 68.35.Ct     

Conductivity compensation and deep traps in epitaxial n-GaAs irradiated by electrons

A study has been made of electrophysical properties and deep traps in epitaxial n-GaAs grown by the chloride method and irradiated by electrons in the temperature range (20–500)°C. It is shown that the natural conductivity of GaAs is attained at irradiation temperatures of 20°C due to the introduction of E traps, and for 300°CT_irr500°C of high-temperature P traps, presumably defect clusters.V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 57–60, October, 1992.     

Instability of the crystal lattice on the verge of structural phase transitions

Conclusion Thus, the data of the present review lead to the conclusion that the pretransition phenomena observed on the verge of SPTs have the character of an intraphase transformation usually of the second or higher order and are observed both before low-temperature martensite transformations and in other temperature intervals. These intraphase transformations are associated with the harmonic softening of the crystal lattice, which may be both isotropic and anisotropic. The directions of the lattice softening coincide with the expected directions of its rearrangement. At the martensite transformation temperature the residual phase, too, undergoes a phase transformation, while the lattice softening observed during intraphase transformations increases.The conclusions reached refer as yet to a relatively small number of alloys and are interpreted within the framework of a simple model of the crystal lattice. The problem of farther investigations is to expand the number of alloys investigated and determine how general the character of both the phenomena of intraphase transitions and of phase transformations preceding and accompanying the SPTs and the regular changes in the properties of the lattice described here are.Translated from Izvestiya Vysshykh Uchebnykh Zavedenii, Fizika, No. 5, pp. 118–126, May, 1985.     

Radius,perimeter, and density profile for percolation clusters and lattice animals

Monte Carlo simulation and series expansion shows the radius of gyration of large clusters withs sites each to vary ass with0.56 in two and0.47 in three dimensions at the percolation threshold, and with(d=2)0.65 and(d=3)0.53 for random lattice animals (zero concentration). Clusters up tos=100 were used. The perimeter of random animals approaches 2.8s for larges on the simple cubic lattice. Monte Carlo simulation of the Eden process (growing animals) up tos=5,000 indicates a systematic variation of about ±0.05 for the effective exponent=(s) and thus suggests that the true asymptotic exponents may be compatible with the predictions of hyper-scaling.     

A phase cell approach to Yang-Mills theory

Variables are chosen to describe the continuum Yang-Mills fields, a discrete set of group valued variables. These are group elements associated to the sequence of lattice field theory configurations realizing the continuum field. The field is laid down inductively. At each inductive step one of three types of field excitations makes its contribution to the total field. These are either pure modes, averaging correction modes, or chunks. The pure modes are small field excitations, as studied in previous papers in this series [2,3]. The averaging correction modes are small excitations added to make sure the block spin transformation is satisfied at each edge. The chunks, encompassing most of our difficulties, are large field excitations. Topological obstructions in ₃(G) must be dealt with in defining a gauge choice for each chunk. The laying down process is complex, but fiendishly clever, ensuring a principle of gauge invariant coupling. Each group valued variable is either the amplitude of a pure mode or an internal variable in a chunk. The amplitude of an averaging correction mode is a dependent variable, a function of the (independent) variables used to describe the field. The (independent) variables herein defined are those whose mutual interaction will later be inductively decoupled in defining the phase cell cluster expansion (of course treating the variables of each chunk as a unit).This work was supported in part by the National Science Foundation under Grant No. PHY-85-02074     

A systematic analysis of defects in ion-implanted silicon

A classification scheme for the different forms of implant-related damage which arise upon annealing consisting of five categories is presented. Category I damage is subthreshold damage or that which results prior to the formation of an amorphous layer. If the dose is increased sufficiently to result in the formation of an amorphous layer then the defects which form beyond the amorphous/crystalline (a/c) interface are classified as category II (end of range) damage. Category III defects are associated with the solid phase epitaxial growth of the amorphous layer. The most common forms of this damage are microtwins, hairpin dislocations and segregation related defects. It is possible to produce a buried amorphous layer upon implantation, If this occurs, then the defects which form when the two a/c interfaces meet are termed category IV (clamshell, zipper) defects. Finally, category V defects arise from exceeding the solid solubility of the implanted species in the substrate at the annealing temperature. These defects are most often precipitates or dislocation loops.In addition to presenting examples of this classification scheme, new results emphasizing category II, IV, and V defects will be presented. For category II defects, the source, dose and mass dependence as well as the influence of pre- and post-amorphization is discussed. The category IV defects which arise from buried amorphous layers in {100} oriented As implanted samples is presented. Half loop dislocations which arise during annealing of high dose As implants, are shown to originate in the category V defects and grow upon dissolution of As clusters and precipitates.