Effect of sample thickness on electron emission from the TGS ferroelectric crystal

An experimental study of electron emission from nominally pure triglycine sulfate crystal samples of various thicknesses is reported. It is shown that the threshold field of emission, similar to the coercive field, increases with decreasing sample thickness d in inverse proportion to d.     

Mechanism of field emission from carbon materials

Field emission in diamond and graphite-like polycrystalline films is investigated experimentally. It is shown that the emission efficiency increases as the nondiamond carbon phase increases; for graphite-like films the threshold electric field is less than 1.5 V/μm, and at 4 V/μm the emission current reaches 1 mA/cm², while the density of emission centers exceeds 10⁶ cm⁻². A general mechanism explaining the phenomenon of electron field emission from materials containing graphite-like carbon is proposed. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 56–60 (10 July 1998)     

Anomalous electron emission spectra and polarization phenomena in a lead magnesium niobate single crystal

The time dependences of the intensity and the energy positions of fine-structure of the spectra of anomalous electron emission from a polarized lead magnesium niobate (PMN) single crystal irradiated with soft x-rays are investigated experimentally. It is shown that the relaxation time of the electret charge can be determined from the graphs of these dependences, and the depth distribution of the potential in the surface layer of the sample can be determined from the profile of the anomalous electron emission spectrum. Estimates of the fields in the surface layers of a polarized PMN single crystal, obtained from the characteristics of the anomalous electron emission spectra, agree with data obtained by electrophysical research techniques. Fiz. Tverd. Tela (St. Petersburg) 39, 1446–1451 (August 1997)     

Pressure effect on emission spectra and crystal field for La OBr : Eu

Abstract

The emission spectra for LaOBr : Eu were measured at pressures up to 13 GPa and room temperature. The pressure dependences of levels of ⁷F_0,1,2,3,4 and ⁵D_0,1,2 are given. The crystal field parameters B^k _q were computed by fitting the experimental levels. The strength of crystal field decreases with increasing pressure. A brief discussion on the observed phenomena is presented.     

Li+低能(e,2e)反应角分布

利用修正的BBK理论，考虑入射道的库仑相互作用及出射电子的交换对称性，在共面-等能分享-垂直角度碰撞几何中，分别计算了能量为79.6，105.6，227.6和375.6eV的入射电子碰撞Li⁺(1s²)(e，2ｅ)反应三重微分截面(TDCS).结果表明：在接近阈能的碰撞中，两出射电子连线平行于入射电子方向时，TDCS最大；两出射电子连线垂直于入射电子方向时，TDCS最小；入射电子能量达5倍的电离阈能时，主要为单次双体碰撞，而且入射道库仑场对决定低能碰撞的TDCS起着重要作用. 关键词：     

Magnetic field dependence of triplet-state ONP: theoretical analysis in terms of level anti-crossings

ABSTRACT

A theoretical approach to Optical Nuclear Polarisation (ONP) is described, which is based on the analysis of Level Anti-Crossings (LACs) in triplet states. Here we consider ONP formed in molecular crystals doped with suitable guest molecules and ONP generated in diamond crystals containing negatively charged nitrogen-vacancy (NV^–) centres. In both cases, electron spin polarisation of triplet states generated by light excitation is transferred to nuclei giving rise to ONP. Polarisation transfer is most efficient at LACs; for this reason, we consider in detail crossings of electron–nuclear energy levels and the role of different perturbation terms (coming from isotropic and anisotropic hyperfine coupling, zero-field splitting and sample orientation), which turn these crossings into LACs and give rise to ONP. Analytical results are supported by numerical calculations of the ONP field dependences. Thus, the outlined LAC analysis is a useful approach for interpreting the ONP magnetic field dependence.     

溶胶-凝胶法制备的Ba0.8Sr0.2TiO3薄膜的结构及铁电性质研究

采用0.05mol/L的前驱体溶液,利用溶胶-凝胶法成功制备了室温下具有优良铁电性质的Ba_0.8Sr_0.2TiO₃ (BST)薄膜.X射线衍射分析表明,制得的BST薄膜室温下呈四方相,场发射扫描电子显微观测显示BST薄膜表面平整、致密、无裂纹出现,薄膜晶粒呈柱状结构、尺寸在150nm左右.电学测量表明制备的BST薄膜室温下具有优良的铁电性能.薄膜的剩余极化P_r约为35μC/cm²,矫顽电场E关键词：     

Effect of pressure on the properties of DH diode lasers in AlxGa1-xAsySb1-y/GaSb system

Abstract

A helium pressure appparatus for diode laser studies up to 1.4 GPa at 77–300 K has been developed. DH lasers with Al_xGa_1-xAs_ySb_1-y active layers (x=0-0.05) lattice-matched to GaSb substrates have been investigated. It has been shown that in lasers with x,y=0 pressure dependences of the threshold current density (J_th) and the average electron lifetime at the threshold (τ) measured at 80 K depend strongly on the quadratic recombination of L^c ₆ electrons, the characteristic coefficient being 1.5×10^?11 cm³s^?1. The pressure-composition equivalence coefficient dx/dP=2.2×10^?10 Pa^?1 has been obtained for the lowest temperatures used.     

Formation of high-energy electron beams in gases of different densities

An investigation was made of the formation of beams of fast electrons in different gases at pressures of from 0.01 to 100 kPa. Plots were made of the dependences of the electron beam currents I_e on the gas pressure p for different electric field strengths E. The dependences I_e=f(p) for air were found to intersect the similar dependences for other gases (helium, nitrogen, neon, and argon) at a pressure of p=10.6 kPa and for E=2.3·10⁵ V·cm^–1. This fact is explained by the influence of the oxygen ions and atoms on the electron beam formation process. Another experimental result, the appearance of a minimum in the dependences I_e=f(p) for all gases, is explained by defocusing of the electron beam, the appearance of a reverse current, and magnetic neutralization of the beam. Electron beams were obtained having a pulse duration of 15–20 nsec and a current of 10⁵-10⁶ A/m² per unit cathode area.Institute of Atmospheric Optics, Siberian Branch, Russian Academy of Sciences. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 67–70, June, 1993.     

Enhanced electron field emission from dense Si nano-dots prepared by laser crystallization of ultrathin amorphous Si films

Dense Si nano-dots with a surface area density of >10¹⁰ cm^?2 were fabricated by excimer laser induced crystallization of 15 nm-thick amorphous Si thin films. The enhanced electron field emission characteristics were found from laser irradiated samples. The threshold electric field is as low as 9.8V/μm and the field enhancement factor can reach as large as 719, which is compatible with the other good cold cathode materials. The improvements in field emission behavior can be associated with the change in the surface morphology after laser irradiation as well as the enhanced internal electric field due to the formation of Si nano-dots within the films.     

Anomalous thermal field emission

The field emissivity of ZrO₂/W(100) nanoheterostructures made by applying a thin (≈10 nm) ZrO₂ layer on the surface of a needle-like W(100) microcrystal is studied. At a nanoheterostructure temperature of ≈2000 K, electron emission is found to start at a low extracting (Laplace) field (below 50 V/μm). Under the conditions of steady electron emission, the emission current density from the surface of the heterostructure may reach anomalously high values (～10⁸ A/cm²). A phenomenological model of anomalous thermal field emission of electrons from the surface of the conductor (metal)-thin insulator heterostructure is suggested.     

Fatigue of lead titanate and lead zirconate titanate thin films

The fatigue of lead titanate and lead zirconate titanate ferroelectric thin films, i.e., a change in the polarization as a function of the number of switching cycles in an external electric field, is investigated experimentally. The threshold numbers of switching cycles are determined to be 10¹⁰–10¹¹ for the lead titanate films and 10⁹–10¹⁰ for the lead zirconate titanate films. It is shown that a change in the temperature does not substantially affect the threshold number of switching cycles at which the switched polarization decreases drastically. However, an increase in the external field strength leads to a noticeable decrease in the threshold number of switching cycles. The process of fatigue is accompanied by an increase in the coercive field and the internal bias field. It is established that, as the number of switching cycles increases, the internal bias field changes more significantly as compared to the coercive field. The absence of a change in the phase composition in repeatedly switched samples indicates that the fatigue processes have a nonchemical nature. The anomaly observed in the frequency dependence of the permittivity in the frequency range 10⁶–10⁷ Hz due to the domain structure disappears after multiple switching cycles. This suggests that the observed fatigue phenomenon has a domain nature.     

Influence of high-energy electron irradiation on field emission properties of multi-walled carbon nanotubes (MWCNTs) films

The effect of very high energy electron beam irradiation on the field emission characteristics of multi-walled carbon nanotubes (MWCNTs) has been investigated. The MWCNTs films deposited on silicon (Si) substrates were irradiated with 6 MeV electron beam at different fluence of 1×10¹⁵, 2×10¹⁵ and 3×10¹⁵ electrons/cm². The irradiated films were characterized using scanning electron microscope (SEM) and micro-Raman spectrometer. The SEM analysis clearly revealed a change in surface morphology of the films upon irradiation. The Raman spectra of the irradiated films show structural damage caused by the interaction of high-energy electrons. The field emission studies were carried out in a planar diode configuration at the base pressure of ∼1×10⁻⁸ mbar. The values of the threshold field, required to draw an emission current density of ∼1 μA/cm², are found to be ∼0.52, 1.9, 1.3 and 0.8 V/μm for untreated, irradiated with fluence of 1×10¹⁵, 2×10¹⁵ and 3×10¹⁵ electrons/cm². The irradiated films exhibit better emission current stability as compared to the untreated film. The improved field emission properties of the irradiated films have been attributed to the structural damage as revealed from the Raman studies.     

Synthesis, characterization, growth mechanism, photoluminescence and field emission properties of novel dandelion-like gallium nitride

Dandelion-like gallium nitride (GaN) microstructures were successfully synthesized via Ni catalyst assisted chemical vapor deposition method at 1200 °C under NH₃ atmosphere by pre-treating precursors with aqueous ammonia. The as-synthesized product was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). X-ray diffraction analysis revealed that as-synthesized dandelion-like GaN was pure and has hexagonal wurtzite structure. SEM results showed that the size of the dandelion-like GaN structure was in the range of 30-60 μm. Dandelion-like GaN microstructures exhibited reasonable field emission properties with the turn-on field of 9.65 V μm⁻¹ (0.01 mA cm⁻²) and threshold field of 11.35 V μm⁻¹ (1 mA cm⁻²) which is sufficient for applications of electron emission devices, field emission displays and vacuum micro electronic devices. Optical properties were studied at room temperature by using fluorescence spectrophotometer. Photoluminescence (PL) measurements of dandelion-like GaN showed a strong near-band-edge emission at 370.2 nm (3.35 eV) with blue band emission at 450.4 nm (2.75 eV) and 465.2 nm (2.66 eV) but with out yellow band emission. The room-temperature photoluminescence properties showed that it has also potential application in light-emitting devices. The tentative growth mechanism for the growth of dandelion-like GaN was also described.     

Study of near surface layer of graphite produced by nitrogen ion bombardment at high doses

To study the modified surface layers of graphites and deposited films of sputtered material, the dependences of sputtering yield Y , and ion-electron emission coefficient γ on ion incidence angle and target temperature under high dose 30 keV N⁺ ₂ ion irradiation have been measured. In the angular range θ=0-80° Y and γ increase approximately as inverse cosθ, Y of POCO-AXF-5Q are 1.5 times larger than of MPG-LT. The dependences of γ (T) manifests a step-like behaviour typical for the radiation induced phase transitions. EPR analysis shows that at near room temperatures the point electron defects are typical of carbon and the defects due to carbon atoms interacting with 14 N nuclei. At elevated temperatures (≥ 300°C) there are the defects typical of graphite-like structures. The films deposited on glass collectors shows for cold targets only the defects typical of carbon, for the heated graphites - also the defects associated with C-¹⁴N nuclei interaction.     

Efficient field emission from well-oriented Cu2O film

Well-oriented Cu₂O films comprising of octahedral-shaped crystals were grown directly on copper foil via an hydrothermal treatment. The well-oriented films were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). Field emission from the film showed good emission properties, and, the electron emission turn-on field (E_to) and threshold field (E_thr) are about 9.6 and 13.4 V/μm respectively, which is similar to the values reported for CuO nanofiber, although the latter has a much larger size. The corresponding Fowler-Nordheim (F-N) plots showed a linear behavior. The sharp corners of the tips are considered as main electron emitters and account for its good performance.     

Effect of deposition voltage on the field emission properties of electrodeposited diamond-like carbon films

Diamond-like carbon (DLC) films were deposited on Al substrates by electrodeposition technique under various voltages. The surface morphology and compositions of synthesized films were characterized by scanning electron microscopy and Raman spectroscopy. With the increase of deposition voltage, the sp² phase concentration decreased and the surface morphology changed dramatically. The influence of deposition voltage on the field electron emission (FEE) properties of DLC films was not monotonic due to two adverse effects of deposition voltage on the surface morphology and compositions. The DLC film deposited under 1200 V exhibited optimum FEE property, including a lowest threshold field of 13 V/μm and a largest emission current density of 904.8 μA/cm² at 23.5 V/μm.     

Effect of vacuum level on field emission from nanographite films

The effect of vacuum level on field emission from nanographite films obtained by plasma-chemical deposition is studied. The stable emission of electrons from the nanographite is observed at a threshold field of 1?C2 V/??m, a current density of 0.1 mA/cm², and a residual gas pressure in the measuring chamber of less than 10^?5 Torr. At a higher pressure, the emission properties of the films gradually degrade with time. Repeat evacuation of the chamber to 10^?5 Torr restores the emission properties. Such behavior of the nanographite emitters is explained by adsorption/desorption processes (reversible degradation of the emission) and the destruction of the film under the action of residual gas ion bombardment (irreversible changes).     

Influence of cesium atoms on the field electron emission from multi-walled carbon nanotubes

It has been shown that the deposition of cesium atoms on multi-wall carbon nanotubes abruptly increases the current of the field electron emission, decreases the threshold electric field by a factor of three (to 0.8 V/m), and decreases the work function to 2.1–2.3 eV. It has been found that the flowing of the large emission current I ≥ 2 × 10^?6 A leads to a change in the current-voltage characteristics and a decrease in the emission current. This effect has been explained by escape of cesium atoms from the tips of most nanotubes into the nanotube depth due to desorption or intercalation. At the same time, the low work function is retained for some nanotubes, probably, due to the stronger bonding of Cs atoms with these nanotubes.     

Dynamics of magnetic insulation failure and self-organization of an electron flow in a magnetron diode

The dynamics of back cathode bombardment (BCB) instability in a magnetron diode (a coaxial diode in a magnetic field, B ≡ B _0z ≡ B ₀) is numerically simulated. The quasi-stationary regime of electron leakage across the high magnetic field (B ₀/B _cr > 1.1, where B _cr is the insulation critical field) is realized. An electron beam in the electrode gap is split into a series of bunches in the azimuthal direction and generates the electric field component E _θ(r, θ, t), which accelerates some of the electrons. Having gained an extra energy, these electrons bombard the cathode, causing secondary electron emission. The rest of the electrons lose kinetic energy and move toward the anode. Instability is sustained if the primary emission from the cathode is low and the secondary emission coefficient k _se=I _se/I _{e, BCB} is greater than unity. The results of numerical simulation are shown to agree well with experimental data. A physical model of back-bombardment instability is suggested. Collective oscillations of charged flows take place in the gap with crossed electric and magnetic fields (E × B field) when the electrons and E × B field exchange momentum and energy. The self-generation and self-organization of flows are due to secondary electron emission from the cathode.