Carbon Nitride Thin Films Deposited by Plasma Assisted Nd∶YAG Laser Ablation of Graphite in N_2 H_2 Atmosphere

1　Ｉｎｔｒｏｄｕｃｔｉｏｎ　　Ｔｈｅｓｙｎｔｈｅｓｉｓｏｆｃａｒｂｏｎｎｉｔｒｉｄｅｔｈｉｎｆｉｌｍｓｈａｓｂｅｅｎｔｈｅｓｕｂｊｅｃｔｏｆｉｎｔｅｎｓｅｓｔｕｄｙｓｉｎｃｅｔｈｅｔｈｅｏｒｅｔｉｃａｌ ｐｒｅｄｉｃａｔｉｏｎ[1,2 ] ａｎｄｅｘｐｅｒｉｍｅｎｔａｌｒｅａｌｉｚａｔｉｏｎ[3] ｏｆ β Ｃ3Ｎ4ｔｈｉｎｆｉｌｍｓ.Ｍａｎｙａｔｔｅｍｐｔｓｈａｖｅｂｅｅｎｍａｄｅｔｏｓｙｎｔｈｅｓｉｚｅｔｈｉｓｍａｔｅｒｉａｌｂｙ ｐｈｙｓｉｃａｌａｎｄｃｈｅｍｉｃａｌｍｅｔｈｏｄｓ ,ｓｕｃｈａｓｒｅａｃｔ…     

Room-Temperature Ferromagnetism in Zn1-xMnxO Thin Films Deposited by Pulsed Laser Deposition

Zn1-xMnxO （x = O.Olq3.1） thin films with a Curie temperature above 300K are deposited on Al2O3 （0001） substrates by pulsed laser deposition. X-ray diffraction （XRD）, ultraviolet （UV）-visible transmission and Raman spectroscopy are employed to characterize the microstructural properties of these films. Room temperature ferromagnetism is observed by superconducting quantum interference device （SQUID）. The results indicate that Mn doping introduces the incorporation of Mn^2＋ ions into the ZnO host matrix and the insertion of Mn^2＋ ions increases the lattice defects, which is correlated with the ferromagnetism of the obtained films. The doping concentration is also proven to be a crucial factor for obtaining highly ferromagnetic Zn1-xMnxO films.     

Optical Characterization of β-FeSi2 Thin Films Prepared by Femtosecond Laser Ablation

Iron disilicide thin films are prepared on fused quartz using femtosecond laser deposition （FsPLD） with a FeSi2 alloy target. X-ray diffraction results indicate the films are single-phase, orthorhombic, β-FeSi2. Field scanning electron microscopy, high resolution transmission electron microscopy, UV-VIS-NIR spectroscopy and Raman microscope are used to characterize the structure, composition, and optical properties of the β-FeSi2 films. Normal incidence spectral transmittance and reflectance data indicate a minimum, direct energy gap of 0.85 eV. The two most intense lines of Raman scattering peaked at 181.3 cm^-1 and 235.6cm^-1 for the film on fused quartz, and at 191.2cm^-1 and 243.8cm^-1 for the film on Si （100）, are observed.     

Epitaxial Properties of Co-Doped ZnO Thin Films Grown by Plasma Assisted Molecular Beam Epitaxy

High quality Co-doped ZnO thin films are grown on single crystalline Al2O3（0001） and ZnO（0001） substrates by oxygen plasma assisted molecular beam epitaxy at a relatively lower substrate temperature of 450℃. The epitaxial conditions are examined with in-situ reflection high energy electron diffraction （RHEED） and ex-situ high resolution x-ray diffraction （HRXRD）. The epitaxial thin films are single crystal at film thickness smaller than 500nm and nominal concentration of Co dopant up to 20%. It is indicated that the Co cation is incorporated into the ZnO matrix as Co^2＋ substituting Zn^2＋ ions. Atomic force microscopy shows smooth surfaces with rms roughness of 1.9 nm. Room-temperature magnetization measurements reveal that the Co-doped ZnO thin films are ferromagnetic with Curie temperatures Tc above room temperature.     

Stability of a Laser-diode-pumped Cr4+∶YAG Passively Q-switched Nd3+∶YAG Laser

In this paper, the stability of a laser-diode-pumped Cr4+∶YAG passively Nd3+∶YAG Q-switched laser and the influence of the transversal mode structure on the stability are investigated. With the laser operating in TEM00 mode, the pulse energy fluctuation and the repetition rate fluctuation as functions of the repetition rate are measured, and semi-quantitatively and qualitatively analyzed, respectively.     

Compositional and Structural Properties of TiO2-xNx Thin Films Deposited by Radio-Frequency Magnetron Sputtering

TiO2-xNx thin films are deposited onto Si（100） and quartz substrates by arf magnetron sputtering method using a titanium metal disc as a target in Ar, N2, and 02 atmospheres. The substrate temperature is kept at 300℃. The O2 and Ar gas flow rates are kept to be constants and the N gas flow rate is varied. TiO2-xNx films with different N contents are characterized by x-ray diffraction and x-ray photoelectron spectroscopy. The results indicate that the TiO2-xNx thin films can be obtained at 13% N and 15% N contents in the film, and the films with mixed TiO2 and TiN crystal can be obtained at 13% N and 15% N contents in the film. In terms of the results of x-ray photoelectron spectroscopy, N ls of β-N （396 eV） is the main component in the TiO2-xNx thin films. Because the energy level of β-N is positioned above the valence-band maximum of TiO2, an effective optical-energy gap decreases from 2.8 eV （for pure TiO2 film deposited by the same rf sputtering system） to 2.3 eV, which is verified by the optical-absorption spectra.     

Chemical Oxidation of La2CuO4 Epitaxial Thin Films Grown by Pulsed Laser Deposition

Chemical oxidation is used to induce superconductivity in La2CuO4 expitaxial thin films fabricated by pulsed laser deposition technique. Details about the influence of oxidation time on structural, surface morphology, Raman spectra, and electrical properties have been investigated. The results convince that successful uptake of oxygen occurs in the oxidized films, and the content of the inserted oxygen increases with increasing oxidation interval. The possible mechanism for the excess oxygen insertion into the film is also discussed.     

Vacancy Aggregation in Diamond Films grown in CH4＋H2 Atmosphere by MPCVD

Transmission electron microscopy is applied to study the diamond film grown in a CH₄ and H₂ gaseous mixture by microwave plasma assisted chemical vapour deposition. Defects in the nanometre scale, dislocation loops, arefirst observed in diamond films. The dislocation loops are found to be of co-existence with planar defects and are next to the planar defects for {111} faceting grains. A possible mechanism is suggested to interpret the co-existence of dislocation loops with planar defects.     

Helium—Charged Titanium Films Deposited by Pulsed Laser Deposition in an Electron—Cyclotron—Resonance helium Plasma Environment

Titanium thin films incorporated with helium are produced by pulsed laser deposition in an electron cyclotron resonance helium plasma environment.Helium is distributed evenly in the film and a relatively high He/Ti atomic ration(-20%) is obtained from the proton backscattering spectroscopy.This high concentration of helium leads to a surface blistering which is observed by scanning electron microsocopy.Laser repetition rate little influence on film characters.Substrate bias voltage is also changed for the helium incorporating mechanism study,and this is a helium ion implantation process during the film growth.Choosing suitable substrate bias voltage,one can avoid the damage produced by ion implantation,which is always present in general implantation case.     

Reduction of Ordering Temperature of FePt-Al2O3 Thin Films by N2 Addition During Sputtering

We investigate the effect of N2 addition during sputtering on the microstructure and magnetic properties of FePt-Al2O3 thin films. The texture of FePt phase in FePt-Al2O3 thin films changes from （111） to a more random orientation by N2 addition during sputtering. The ordering temperature of FePt phase reduces about 100℃ with appropriate N2 partial pressure. A larger coercivity of 6.0 × 10^5 Aim is obtained with N2 partial pressure about 15%. Structural analysis reveals that a small quantity of Fe3N phase forms during sputtering and the release of N atoms during the post annealing induces a large number of vacancies in the films, which benefits to the transformation of FePt phase from fcc to fct.     

Dynamics of Efficiency Change by Temperature in Diode Pumped Nd：YAG Heat Capacity Laser

We investigate the influence of temperature on the efficiency of diode pumped Nd：YAG heat capacity laser is studied. It is shown that the efficiency of such a laser system is greatly reduced at higher temperature. This bad behaviour is mainly caused by the doped-ion redistribution among various Stark levels of the ground state, and by a thermal equilibrium between the upper laser level and the pump level. Meanwhile, the thermal excitations from the ground state to the lower laser level also play a role. We derive a model to describe those effects, with the considerations of emission spectrum of laser diodes, the subtle Stark structures and the linewidth of absorption and of simulated-emission.     

Preparation of a Waveguide Array in Flame Hydrolysis Deposited GeO2—SiO2 Glasses by Excimer Laser Irradiation

SiO2 galss films doped with GeO2 were prepared by the flame hydrolysis deposition method,then annealed at 1200℃.After exposure to high pressure hydrogen,the as-deposited films were irradiated with excimer laser pulses operated at 248nm,The induced refractive index change(the growth of index change was 0.33%)was measured by a spectorscopic ellipsometer.A waveguide array has been written in the film by irradiation through a phase mask.     

Low-Temperature Growth of Polycrystalline silicon Films by SiCl4／H2 rf Plasma Enhanced Chemical Vapour Deposition

Polycrystalline silicon film was directly fabricated at 200℃ by the conventional plasma enhanced chemical vapour deposition method from SiCl4 with H2 dilution. The crystallization depends strongly on the deposition power.The maximum crystMlinity and the crystalline grain size are over 80% and 200—50Onm, respectively. The results of energy dispersive spectroscopy and infrared spectroscopy measurements demonstrate that the film is mostly composed of silicon, without impurities such as Cl, N, C and bonded H. It is suggested that the crystallization at such a low temperature originates from the effects of chlorine, i.e., in-situ chemical, etching, in-situ chemical cleaning, and the detachment of bonded H.     

Generation of 2.1 W Continuous Wave Blue Light by Intracavity Doubling of a Diode-End-Pumped Nd：YAG Laser in a 30 mm LBO

A folded four-mirror cavity with a composite Nd：YAG rod is optimized to obtain high efficient cw 473nm blue output. The laser could operate stably in the region of the thermal-lens focal length from 20mm to 70mm. LBO is used for intracavity frequency doubling of the 946nm transition of Nd：YAG and the optimum LBO length is investigated. A maximum output power of 2.1 Win the blue spectral range at 473nm is achieved with 30-mm-long LBO, corresponding to an optical conversion efficiency of 9.1%.     

Preparation of Cu（In,Ga）Se2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere

Cu（In, Ga）Se2 thin films are deposited on Mo-coated glass substrates by Se vapour selenization of sputtered metallic precursors in the atmosphere of Ar gas flow under a pressure of about 10 Pa. The in situ heat treatment of as-grown precursor leads to the formation of a better alloy. During selenization, the growth of CuInSe2 phase preferably proceeds through Se-poor phases as CuSe and InSe at relatively low substrate temperature of 250℃, due to the absence of In2Se3 at intermediate stage at low reactor pressure. Subsequently, the Cu（In,Ga）Se2 phase is produced by the reactive diffusion of CuInSe2 with a Se-poor GaSe phase at high temperature of up to 560℃. The final film exhibits smooth surface and large grain size. The absorber is used to fabricate a glass/Mo/Cu（In, Ga）Se2/CdS/ZnO cell with the total-area efficiency of about 7%. The low open-circuit voltage value of the cell fabricated should result from the nonuniform distribution of In and Ga in the absorber, due to the diffusion-controlled reaction during the phase formation. The films, as well as devices, are characterized.     

Removal of NOx from NO2∶NO∶N2 mixture by a pulsed and dc streamer corona in a needle-to-plate reactor

The results of laboratory experiments on reduction of NO _x in the oxygen free gas mixture NO₂NON₂ simulating exhaust gas, by means of pulsed and dc streamer corona discharges generated in a needle-to-plate reactor have been presented. The results show that the dc corona discharge is more efficient in De-NO _x process than the pulsed corona discharge. This is in contrast to the results obtained in the wire-to-cylinder reactors where the pulsed corona discharge removes NO _x more efficiently. The results also lead to the conclusion that in the dc streamer corona discharge the short pulses and long interelectrode distances are recommended in order to increase the NO _x conversion rate.Presented at 17^th Symposium Plasma Physics and Technology, Prague, June 13–16, 1995.This work was financially supported by the Polish Academy of Sciences (projects IMP 3.1 and 3.3) and by the Polish Committee for Scientific Research (KBN Grant No. P40103304).