Controlled growth of Zn nano-dots on a Si(111)-7x7 surface saturated with C2H5OH

Metal atoms bonded with Si adatoms on the Si(111)-(7x7) surface undergo migration by hopping adjacent Si-rest atoms with dangling bond. By saturated adsorption of Si(111)-(7x7) surface with C(2)H(5)OH, the whole Si-rest atoms and a half of Si adatoms are occupied with Si-H and Si-OC(2)H(5), so that the Zn atoms adsorbed on this surface cannot migrate by hopping. When Zn atoms were deposited on this surface, ca. 5 nm Zn dots were grown in the hexagonal spacing of ca. 5.4 nm width around the corner holes, which work as a mold. This is quite different from the growth of honeycomb layers composed of Zn(3) clusters on the clean Si(111)-(7x7) surface. The dots grow up to nine (1.97 nm) to 13 layers (2.64 nm) by keeping their size, which implies a layer-by-layer growth of dots in the mold, where the growth is controlled by the kinetics instead of energetic feasibility.     

Binding of glycine and L-cysteine on Si(111)-7 x 7

The adsorption of glycine and l-cysteine on Si(111)-7 x 7 was investigated using high-resolution electron energy loss spectroscopy (HREELS) and X-ray photoelectron spectroscopy (XPS). The observation of the characteristic vibrational modes and electronic structures of NH3+ and COO- groups for physisorbed glycine (l-cysteine) demonstrates the formation of zwitterionic species in multilayers. For chemisorbed molecules, the appearance of nu(Si-H), nu(Si-O), and nu(C=Omicron) and the absence of nu(O-H) clearly indicate that glycine and l-cysteine dissociate to produce monodentate carboxylate adducts on Si(111)-7 x 7. XPS results further verified the coexistence of two chemisorption states for each amino acid, corresponding to a Si-NH-CH2-COO-Si [Si-NHCH(CH2SH)COO-Si] species with new sigma-linkages of Si-N and Si-O, and a NH2-CH2-COO-Si [NH2CH(CH2SH)COO-Si] product through the cleavage of the O-H bond, respectively. Glycine/Si(111)-7 x 7 and l-cysteine/Si(111)-7 x 7 can be viewed as model systems for further modification of Si surfaces with biological molecules.     

Diffusion by chemical bond hopping of single O2 and H on Si(111)-7×7 surfaces

Using a variable temperature STM to trace in detail the path of single particle movement, it is possible to derive diffusion parameters of individual atoms and molecules on solid surfaces as well as to probe the mechanisms. Below ˜370 °C, O₂ molecules adsorb on Si(111)-7×7 surfaces at the top site of Si-adatoms as bright image spots. An O₂ molecule can hop between two adatom sites within the half unit cell it adsorbs via two rest-atom sites. Above this temperature, it can either hop out of the half cell, or can go through other reaction pathways. In contrast, for H atoms, the adsorption sites are rest-atom sites. An H atom darkens the rest-atom in filled state image, but the surrounding adatoms will appear brighter because of a reverse charge transfer. Above ˜280 °C, it can hop to a neighbor rest atom site within the half cell via an adatom site. The adatom in the short lived intermediate state appears darker because of the saturation of its dangling bond. Above ˜340 °C, it can hop out of the half cell via two adatom sites. Thus diffusion of H and O₂ on this surface is achieved by hopping of chemical bonds via intermediate states. We have also derived site and pathway-specific activation energies and frequency factors and the potential energy curves for the hopping of O₂ and H on Si(111)-7×7 surfaces.     

Dry synthesis of triple cumulative double bonds (C=C=C=N) on Si(111)-7 x 7 surfaces

The interactions of cyanoacetylene and diacetylene with a Si(111)-7 x 7 surface have been studied as model systems to mechanistically understand the chemical binding of unsaturated organic molecules to diradical-like silicon dangling bonds. Vibrational studies show that cyanoacetylene mainly binds to the surface through a diradical reaction involving both cyano and C[triple bond]C groups with an adjacent adatom-rest atom pair at 110 K, resulting in an intermediate containing triple cumulative double bonds (C=C=C=N). On the other hand, diacetylene was shown to the covalently attached to Si(111)-7 x 7 only through one of its C[triple bond]C groups, forming an enynic-like structure with a C=C-C[triple bond]C skeleton. These chemisorbed species containing triple cumulative double bonds (C=C=C=N) and C=C-C[triple bond]C may be employed as precursors (or templates) for further construction of bilayer organic films on the semiconductor surfaces.     

Dissociation of N2 on a Si(111)-7x7 Surface at Room Temperature

We demonstrate that the strong N₂ bond can be efficiently dissociated at low pressure and ambient temperature on a Si(111)-7x7 surface. The reaction was experimentally investigated by scanning tunnelling microscopy and X-ray photoemission spectroscopy. Experimental and density functional theory results suggest that relatively low thermal energy collision of N₂ with the surface can facilitate electron transfer from the Si(111)-7x7 surface to the π*-antibonding orbitals of N₂ that significantly weaken the N₂ bond. This activated N₂ triple bond dissociation on the surface leads to the formation of a Si₃N interface.     

Attachment of styrene and phenylacetylene on Si(111)-7 x 7: the influence of substitution groups on the reaction mechanism and formation of pi-conjugated skeletons

The interactions of styrene and phenylacetylene and their isotope substitutions with a Si(111)-7 x 7 surface have been studied as model systems to mechanistically understand the chemical binding of conjugated pi-electron systems to di-radical-like silicon dangling bonds of the adjacent adatom-rest atom pair. Vibrational studies show that styrene mainly binds to the surface through a diradical reaction involving both the external C=C and its conjugated internal C=C of the phenyl ring with an adjacent adatom-rest atom pair, forming a 5-ethylidene-1,3-cyclohexadiene-like skeleton. On the other hand, phenylacetylene was shown to be covalently attached to Si(111)-7 x 7 through the external C[triple bond]C, forming a styrene-like conjugation system. These experimental results are consistent with density functional theory calculations. The different binding mechanisms for styrene and phenylacetylene clearly demonstrate that reaction channels for multifunctional organic molecules are strongly dependent on the chemical and physical properties of the functional groups. The resulting pi-electron conjugation structures may possibly be employed as intermediates for further organic syntheses and fabrication of multilayer organic films on semiconductor surfaces.     

Electron correlation effects at Sn/Si(1 1 1)– and Sn/Ge(1 1 1)– reconstructions

Electron correlation effects for the two-dimensional electron gas associated with the surface bands of the Sn/Si(1 1 1)–3×3, , Sn/Ge(1 1 1)–3×3 and reconstructions are analyzed. Unrestricted local-density-approximation (LDA) calculations enable to define a many-body hamiltonian that includes intra- and inter-site electron interactions. From the analysis of this hamiltonian, it can be concluded that the reconstructions present a Mott transition, while the 3×3 surface remains metallic. How these results can be used to to discriminate between conflicting models explaining the phase transition is described. Inverse photoemission data for the Sn/Si(1 1 1) surface suggests that this phase transition can be explained by means of a dynamical fluctuations model.     

Si-C(N) sigma linkages and N --> Si dative bonding at pyridine/Si(111)-7 x 7

We experimentally demonstrated that pyridine/Si(111)-7 x 7 can act as an electron donor/acceptor pair as a result of the charge transfer from the electron-rich N atom of pyridine to the electron-deficient adatom of the Si surface, evidenced by the upshift of 1.8 eV (state A) for the N(1s) core level upon the formation of a datively bonded complex compared to physisorbed molecules. Another state (B) whose N(1s) binding energy downshifts by 1.2 eV was assigned to an adduct through Si-C and Si-N covalent linkages, formed via a [4 + 2]-like addition mechanism on Si(111)-7 x 7. Binding molecules through the formation of the dative bond resulted from significant electron transfer opens a new approach for the creation of Si-based molecular architectures and modification of semiconductor interfacial properties with unsaturated organic molecules.     

Molecular anchor Cu-S formed on a thiophene mediated Si(111)-(7x7) surface

Thiophene molecule selectively binds to the adjacent adatom-rest atom pair on the Si(111)-(7x7) surface through its alpha-carbon atoms, leading to the covalent attachment of a C-S-C linkage and remaining C=C (beta-carbon) bond onto the surface. Photoemission studies show that Cu atom readily adsorbs onto the S atom of the functional group to form the Cu-S molecular anchor in two forms: one points away from the thiophene C=C group; the other points toward the C=C group.     

苯在Si(111)-7*7表面化学吸附的理论研究

采用两种大小不同的原子簇模型Si_(30)H_(28)和Si_(13)H_(16),分别用两层 ONIOM方法（对较大原子簇）和普通量子化学方法（对较小原子族）考察了苯分子 在Si(111)-7 * 7表面的化学吸附。对三种可能的吸附物种分别用DFT或HF方法进行 了计算。通过大小原子簇吸附物种的吸附能以及几何构型优化参数的比较发现,对 于稳定的吸附物种,较小的原子簇基本上可以代替较大的原子簇进行计算,而对于 不太稳定的吸附物种,就不得不考虑周边原子的影响。计算结果表明苯在Si(111)- 7 * 7表面的主要吸附种是双σ成键的1,4加成产物,不稳定的单吸附物种可能是 1,4加成物种的前驱态。     

Selective attachment of 1,4-benzenedimethanethiol on the copper mediated Si(111)-(7 x 7) surface through S-Cu linkage

The well-defined and patterned copper clusters formed on the Si(111)-(7 x 7) surface have been employed as a template for selective binding of 1,4-benzenedimethanethiol (HS-CH2-C6H4-CH2-SH, 1,4-BDMT), to form ordered molecular nanostructures. Scanning tunneling microscopic (STM) studies showed that each 1,4-BDMT molecule preferentially binds to two neighboring copper atoms within one copper cluster through the S-Cu interaction with its molecular plane parallel to the surface, whereas some 1,4-BDMT bond to individually adsorbed copper atoms, resulting in an upright configuration. Large-scale two-dimensional molecular nanostructures can be obtained using this patterned assembly technique. Our experiments demonstrate the feasibility for controllable growth of ordered molecular nanostructures on the Si(111)-(7 x 7) surface.     

Studies of chemisorbed tetracene on si(111)-7x7

The chemisorption of tetracene on the Si(111)-7x7 surface was studied using scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. On the basis of the STM results and dimension analysis, two types of binding configurations were proposed. One of the configurations involves the di-sigma reaction between two C atoms of an inner ring with an adatom-rest atom pair on the substrate to give rise to an unsymmetrical butterfly structure. Tetracene in another configuration possesses four C-Si bonds that are formed via di-sigma reactions between the C atoms at the terminal rings with two center adatom-rest atom pairs within one-half of the surface unit cell. Besides, two other binding modes were proposed based on the dimension compatibility between the tetracene C and the substrate Si dangling bonds even though their identifications through the STM images are nonexclusive. Structural modeling and adsorption energies calculations were carried out using the DFT method. Factors affecting the relative thermodynamic stabilities based on the calculation results and the relative populations of tetracene in the different binding configurations as observed experimentally were discussed.     

Surface chemistry of five-membered aromatic ring molecules containing two different heteroatoms on Si(111)-7 x 7

The surface chemistry of three representative aromatic molecules containing two different heteroatoms isoxazole, oxazole, and thiazole on Si(111)-7 x 7 was studied. These molecules exhibit different competition and selectivity for multiple reaction channels with this surface, determined by a combination of molecular electronic and structural factors. Isoxazole is chemically attached to Si(111)-7 x 7 through both dative-bond addition and [4 + 2]-like cycloaddition. Oxazole chemisorbs on Si(111)-7 x 7 through both dative-bond addition and [2 + 2]-like cycloaddition. The kinetically favored [2 + 2]-like cycloadduct at low temperature is thermally converted into the thermodynamically preferred [4 + 2]-like cycloadduct at a temperature higher than 300 K. Thiazole is chemically bound to this surface only through formation of a Si...N dative bond at low temperature. This dative-bonded molecule is thermally converted into a [4 + 2]-like cycloadduct. The reaction channels of the three five-membered aromatic molecules containing two different heteroatoms (isoxazole, oxazole, and thiazole) and of the aromatic molecules containing only one heteroatom (pyridine, pyrrole, furan, and thiophene) are compared and analyzed for a thorough understanding of the reaction mechanisms of various heterocyclic aromatic molecules on this surface. The intrinsic connection between surface reaction mechanism and molecular electronic structure is demonstrated. This includes the distribution of electron density on the molecular ring determined by the geometric arrangement of the heteroatoms, the electronegativity of the heteroatoms, and the electronic contribution of the heteroatoms to formation of aromatic pi conjugation, as well as the molecular polarity.     

Selective formation of cumulative double bonds (C[double bond]C[double bond]N) in the attachment of multifunctional molecules on Si(111)-7 x 7

The cumulative double bond (C[double bond]C[double bond]N), an important intermediate in synthetic organic chemistry, was successfully prepared via the selective attachment of acrylonitrile to Si(111)-7 x 7. The covalent binding of acrylonitrile on Si(111)-7 x 7 was studied using high-resolution electron energy loss spectroscopy (HREELS), X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), scanning tunneling microscopy (STM) and DFT calculations. The observation of the characteristic vibrational modes and electronic structures of the C[double bond]C[double bond]N group in the surface species demonstrates the [4 + 2]-like cycloaddition occurring between the terminal C and N atoms of acrylonitrile and the neighboring adatom-rest atom pair, consistent with the prediction of DFT calculations. STM studies further show the preferential binding of acrylonitrile on the center adatom sites of faulted halves of Si(111)-7 x 7 unit cells.     

HREELS, STM, and STS study of CH(3)-terminated Si(111)-(1x1) surface

An ideally (1x1)-CH(3)(methyl)-terminated Si(111) surface was composed by Grignard reaction of photochlorinated Si(111) and the surface structure was for the first time confirmed by Auger electron spectroscopy, low energy electron diffraction, high-resolution electron energy loss spectroscopy (HREELS), scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS). HREELS revealed the vibration modes associated to the CH(3)-group as well as the C-Si bond. STM discerned an adlattice with (1x1) periodicity on Si(111) composed of protrusions with internal features, covering all surface terraces. The surface structure was confirmed to be stable at temperatures below 600 K. STS showed that an occupied-state band exists at gap voltage of -1.57 eV, generated by the surface CH(3) adlattice. This CH(3):Si(111)-(1x1) adlayer with high stability and unique electronic property is prospective for applications such as nanoscale lithography and advanced electrochemistry.     

Thermal and ion-induced surface reactions of 1,1-difluoroethylene on Si(111)7 x 7 and vitreous SiO2

Thermal and ion-induced reactions of 1,1-difluoroethylene (1,1-C2H2F2 or iso-DFE) on Si(111)7 x 7 and vitreous SiO2 surfaces have been investigated by vibrational electron energy loss spectroscopy and thermal desorption spectrometry. Like ethylene, iso-DFE predominantly chemisorbs via a [2 + 2] cycloaddition mechanism onto the 7 x 7 surface as a di-sigma-bonded difluoroethane-1,2-diyl adstructure, which undergoes H abstraction and defluorination, producing hydrocarbon fragments and SiF(x) (x = 1-3) upon annealing to >700 K. Ion irradiation of Si(111)7 x 7 in iso-DFE at 50 eV impact energy appears to substantially enhance the production of hydrocarbon fragments and SiF(x)(), leading to stronger SiF4 desorption products over an extended temperature range (400-900 K). The observed SiC and SiF(x) produced on the 7 x 7 surface by ion irradiation in iso-DFE are found to be similar to those obtained by ion irradiation in the fluoromethane homologues, CF4 and CH2F2. The production of higher relative concentrations for the larger SiF(x) and C2-containing fragments is evidently favored on the 7 x 7 surface. On a vitreous SiO2 surface, ion irradiation in iso-DFE, unlike that in CF4 and CH2F2, appears to produce less SiF(x) than that on the 7 x 7 surface, which indicates that surface O does not interact strongly with the C2-containing fragments. The presence or absence of a C=C bond and the relative F-to-C ratio of the sputtering gas could therefore produce important effects on the resulting surface products obtained by low-energy ion irradiation.     

Effect of substituents on the strength of A-Cl- (A = Si, Ge, and Sn) bonds in hypervalent systems: ACl5-, ACl4F-, and A(CH3)3Cl2-

The gas-phase strengths of the A-Cl(-) bonds in ACl(5)(-), ACl(4)F(-), and A(CH(3))(3)Cl(2)(-) (A = Si, Ge, and Sn) have been determined by measuring thresholds for collision-induced dissociation in a flowing afterglow-tandem mass spectrometer. Bond dissociation energies increase in the order Si < Ge < Sn. Replacement of the three equatorial chlorides with methyl groups weakens the bonds, while replacing one axial chloride with a fluoride strengthens the bonds. Computational results using the B3LYP model with several basis sets parallel the experimental periodic trends, but provide bond dissociation energies lower than experiment by 7-44 kJ mol(-1). MP2 computational results are in better agreement with experiment. The results are consistent with steric hindrance and electrostatic effects playing significant roles in the bonding energetics.     

X-ray studies of self-assembled organic monolayers grown on hydrogen-terminated Si(111)

The structure of self-assembled monolayers (SAMs) of undecylenic acid methyl ester (SAM-1) and undec-10-enoic acid 2-bromo-ethyl ester (SAM-2) grown on hydrogen-passivated Si(111) were studied by X-ray reflectivity (XRR), X-ray standing waves (XSW), X-ray fluorescence (XRF), atomic force microscopy, and X-ray photoelectron spectroscopy (XPS). The two different SAMs were grown by immersion of H-Si(111) substrates into the two different concentrated esters. UV irradiation during immersion was used to create Si dangling bond sites that act as initiators of the surface free-radical addition process that leads to film growth. The XRR structural analysis reveals that the molecules of SAM-1 and SAM-2 respectively have area densities corresponding to 50% and 57% of the density of Si(111) surface dangling bonds and produce films with less than 4 angstroms root-mean-square roughness that have layer thicknesses of 12.2 and 13.2 angstroms. Considering the molecular lengths, these thicknesses correspond to a 38 degrees and 23 degrees tilt angle for the respective molecules. For SAM-2/Si(111) samples, XRF analysis reveals a 0.58 monolayer (ML) Br total coverage. Single-crystal Bragg diffraction XSW analysis reveals (unexpectedly) that 0.48 ML of these Br atoms are at a Si(111) lattice position height that is identical to the T1 site that was previously found by XSW analysis for Br adsorbed onto Si(111) from a methanol solution and from ultrahigh vacuum. From the combined XPS, XRR, XRF, and XSW evidence, it is concluded that Br abstraction by reactive surface dangling bonds competes with olefin addition to the surface.     

Optical detection of surface states

The optical techniques for detecting electronic surface states are discussed, with special reference to the earlier results that gave the first evidence of the existence of surface states in semiconductors. The results for the Si and Ge(111)2×1 reconstructed surfaces are discussed in some detail with the aim of outlining the contribution of optical measurements to the verification of the chain model of the surface. Experiments that give evidence to the polar character of the 2×1 surface are also presented.     

The interfacial properties of MgCl(2) thin films grown on Si(111)7 x 7

Photoelectron spectroscopy with synchrotron radiation and low energy electron diffraction (LEED) were used in order to study the MgCl(2)Si(111) system. At submonolayer coverage of MgCl(2), a new LEED pattern was observed corresponding to a (sqr rt 3 x sqr rt 3)R30 degrees overlayer superimposed on the underlying reconstructed Si(111)7 x 7. The surface species at this stage are mainly molecular MgCl(2) and MgCl(x) (x<2) or MgO(x)Cl(y) attached to the Si substrate through Cl bridges coexisting with monodentate SiCl. The interfacial interaction becomes more pronounced when the submonolayer coverage is obtained by annealing thicker MgCl(2) layers, whereby desorption of molecular MgCl(2) is observed leaving on the nonreconstructed silicon surface an approximately 0.2 ML thick MgCl(x) layer which again forms the (sqr rt 3 x sqr rt 3 )R30 degrees superstructure.