Spin-Polarized Carriers Injection from Ferromagnetic Metal into Organic Semiconductor

Charge carriers in organic semiconductor are different from that oftraditional inorganic semiconductor. Based on three-current model,considering electrical field effect, we present a theoretical model todiscuss spin-polarized injection from ferromagnetic electrode into organicsemiconductor by analyzing electrochemical potential both in ferromagneticelectrode and organic semiconductors. The calculated result of this modelshows effects of electrode's spin polarization, equilibrium value ofpolarons ratio, interfacial conductance, bulk conductivity of materials andelectrical field. It is found that we could get decent spin polarizationwith common ferromagnetic electrode by increasing equilibrium value ofpolarons ratio. We also find that large and matched bulk conductivity oforganic semiconductor and electrode, small spin-dependent interfacialconductance, and enough large electrical field are critical factors forincreasing spin polarization.     

Spin-Polarized Carriers Injection from Ferromagnetic Metal into Organic Semiconductor

Charge carriers in organic semiconductor are different from that of traditional inorganic semiconductor. Based on three-current model, considering electrical field effect, we present a theoretical model to discuss spin-polarized injection from ferromagnetic electrode into organic semiconductor by analyzing electrochemical potential both in ferromagnetic electrode and organic semiconductors. The calculated result of this model shows effects of electrode＇s spin polarization, equilibrium value of polarons ratio, interracial conductance, bulk conductivity of materials and electrical field. It is found that we could get decent spin polarization with common ferromagnetic electrode by increasing equilibrium value of polarons ratio. We also find that large and matched bulk conductivity of organic semiconductor and electrode, small spin-dependent interracial conductance, and enough large electrical field are critical factors for increasing spin polarization.     

Effective Injection of Spins from a Ferromagnetic Metal to the InSb Semiconductor

JETP Letters - Conditions for the fabrication of lateral semiconductor spin devices with a high efficiency of spin injection have been revealed. Technological aspects of the formation of magnetic...     

Enhanced Spin Injection into ZnO Semiconductor Measured by Magnetoresistance

We prepare 2× （NiFe/CoZnO）/ZnO/（CoZnO/Co）×2 spin valve structures used for spin injection by sputtering and photolithography. In the junctions, the free magnetic layer 2× （NiFe/CoZnO） and the fixed magnetic layer （CoZnO/Co） × 2 are used to realize the spin valve functions in the external switch magnetic field. Since the wide gap semiconductor ZnO layer is located between the two magnetic semiconductor layers CoZnO, the electrical ,spin injection from the magnetic semiconductor CoZnO into the non-magnetic semiconductor ZnO is realized. Based on the measured magnetoresistance and the Schmidt model, the spin polarization ratio in the ZnO semiconductor is deduced to be 11.7% at 90K and 7.0% at room temperature, respectively.     

Spin Splitting in Different Semiconductor Quantum Wells

We theoretically investigate the spin splitting in four undoped asymmetric quantum wells in the absence of external electric field and magnetic field. The quantum well geometry dependence of spin splitting is studied with the Rashba and the Dresselhaus spin-orbit coupling included. The results show that the structure of quantum well plays an important role in spin splitting. The Rashba and the Dresselhaus spin splitting in four asymmetric quantum wells are quite different. The origin of the distinction is discussed in this work.     

Effect of Electric Field on Spin Polarized Current in Ferromagnetic/Organic Semiconductor Systems

Considering the special carriers in organic semiconductors, the spin polarized current under electric field in a ferromagnetic/organic semiconductor system is theoretically studied. Based on the spin-diffusion theory, the current spin polarization under the electric field is obtained. It is found that electric field can enhance the current spin polarization.     

Electron Spin Resonance under Conditions of a Ferromagnetic Phase Transition

JETP Letters - The spin resonance of two-dimensional conduction electrons in a ZnO/MgZnO heterojunction in tilted magnetic fields is studied near the filling factor $$\nu = 2$$ . The analysis of...     

The Spin Pumping Effect in a Ferromagnetic Insulator/Normal Metal System: A Simple Quantum Mechanical Model

Physics of the Solid State - A simple quantum mechanical model of the spin pumping effect upon the excitation of a ferromagnetic resonance in a magnetic dielectric having a flat interface with a...     

外注入非制冷式FP半导体增益开关激光器产生低抖动光脉冲的实验研究

报道了低成本、非制冷法布里-玻罗腔半导体增益开光激光器稳定地产生超短脉冲的实验研究.通过使用外部连续光注入,增益开光激光器的脉冲抖动得到了有效的抑制.实验结果表,明当选择合适功率的连续光注入到非制冷半导体增益开关激光器腔内,可以稳定地产生脉宽26 ps、抖动低于400 fs、重复频率2.5 GHz的脉冲序列.     

Effect of Carrier Differences on Spin Polarized Injection into Organic and Inorganic Semiconductors

Spin polarized injection into organic and inorganic semiconductors are studied theoretically from the spin diffusion theory and Ohm＇s law, and the emphases are placed on the effect of the carrier differences on the current spin polarization. The mobility and the spin-flip time of carriers in organic and inorganic semiconductors are different. From the calculation, it is found that current spin polarization at a ferromagnetic/organic interface is higher than that at a ferromagnetic/inorganic interface because of different carriers in them. Effects of the conductivity matching, the spin dependent interracial resistances, and the bulk spin polarization of the ferromagnetic layer on the spin polarized injection are also discussed.     

Transforming a Two-Dimensional Layered Insulator into a Semiconductor or a Highly Conductive Metal through Transition Metal Ion Intercalation

Atomically thin two-dimensional(2D) materials are the building bricks for next-generation electronics and optoelectronics, which demand plentiful functional properties in mechanics, transport, magnetism and photoresponse.For electronic devices, not only metals and high-performance semiconductors but also insulators and dielectric materials are highly desirable. Layered structures composed of 2D materials of different properties can be delicately designed as various useful heterojunction or homojunction devices, in which the designs on the same material(namely homojunction) are of special interest because preparation techniques can be greatly simplified and atomically seamless interfaces can be achieved. We demonstrate that the insulating pristine ZnPS_3, a ternary transition-metal phosphorus trichalcogenide, can be transformed into a highly conductive metal and an n-type semiconductor by intercalating Co and Cu atoms, respectively. The field-effect-transistor(FET) devices are prepared via an ultraviolet exposure lithography technique. The Co-ZnPS_3 device exhibits an electrical conductivity of 8 × 10~4 S/m, which is comparable to the conductivity of graphene. The Cu-ZnPS_3 FET reveals a current ON/OFF ratio of 1~05 and a mobility of 3 × 10~(-2 )cm~2·V~(-1)·s~(-1). The realization of an insulator, a typical semiconductor and a metallic state in the same 2D material provides an opportunity to fabricate n-metal homojunctions and other in-plane electronic functional devices.     

Spin Relaxation in Single-Ion Magnets under the Slowing Down Effect Produced by the Stray Field of Ferromagnetic Microparticles

JETP Letters - The quantum tunneling of magnetization accelerates magnetic relaxation in transition and rare-earth ion complexes and often leads to the degradation of the characteristics of...     

Synthesis of Cu–Ni Alloy Powder Directly from Metal Salts Solution

Cu–Ni alloy powders were synthesized directly from metal nitrate solution. Combustion, ultrasonic mist combustion and ultrasonic pyrolysis processes were applied and Cu–Ni alloy powder was successfully synthesized by mist combustion and ultrasonic pyrolysis of nitrate salts in a reducing atmosphere. X-ray diffraction data showed that the copper and the nickel atoms were completely mixed. For Cu–Ni alloy powder prepared by ultrasonic mist combustion, powder was a hollow sphere and consisted of nano-sized particles. For Cu–Ni alloy powder prepared by ultrasonic pyrolysis, particles consisted of nano-scale particles loosely coagulated. The synthesis temperature was 800°C, which is much lower than the liquidus of a Cu–Ni binary system. Metal alloying by mist pyrolysis, named chemical alloying, has many advantages: (1) no crucible, ball or jar is needed, (2) low synthesis temperature below the liquidus of the alloy system, (3) no extraction step is needed, (4) no cation contamination, (5) direct synthesis of fine powder from metal salts and (6) a simple and inexpensive process. The disadvantage is the contamination of organic elements from the solvent and the salt.     

不同金属材料在不同热源加热下的热传导研究

本文分别采用酒精灯火焰和CO_2激光器发射的波长为10.6μm的红外线对铜、铝、铁正入射加热,用DIS信息化系统测量各种情况下的温升情况。通过实验发现采用CO_2激光器发射的波长为10.6μm的红外线正入射加热时铝、铁出现反常温升现象,从理论上进行分析得到了正确的解释。     

Synchrotron X-Ray Diffraction Studies on the New Generation Ferromagnetic Semiconductor Li(Zn,Mn)As under High Pressure

The pressure effect on the crystalline structure of the Ⅰ-Ⅱ-Ⅴ semiconductor Li(Zn,Mn)As ferromagnet is studied using in situ high-pressure x-ray diffraction and diamond anvil cell techniques. A phase transition starting at ~11.6 GPa is found. The space group of the high-pressure new phase is proposed as Pmca. Fitting with the Birch-Murnaghan equation of state, the bulk modulus B_0 and its pressure derivative B_0~' of the ambient pressure structure with space group of F43m are B_0 = 75.4 GPa and B_0~'= 4.3, respectively.     

Dopant Spin States and Magnetic Interactions in Transition Metal (Fe3+)-Doped Semiconductor Nanoparticles: An EMR and Magnetometric Study

In this work, electron magnetic resonance (EMR) spectroscopy and magnetometry studies were employed to investigate the origin of the observed room-temperature ferromagnetism in chemically synthesized Sn_1?x Fe _x O₂ powders. EMR data clearly established the presence of two different types of signals due to the incorporated Fe ions: paramagnetic spectra due to isolated Fe³⁺ ions and broad ferromagnetic resonance (FMR) spectra due to magnetically coupled Fe³⁺ dopant ions. EMR data analysis and simulation suggested the presence of high-spin (S = 5/2) Fe³⁺ ions incorporated into the SnO₂ host lattice both at substitutional and at interstitial sites. The FMR signal intensity and the saturation magnetization M _s of the ferromagnetic component increased with increasing Fe concentration. For Sn_0.953Fe_0.047O₂ samples, well-defined EMR spectra revealing FMRs were observed only for samples prepared in the 350–600°C range, whereas for samples prepared at higher annealing temperatures up to 900°C, the FMRs and saturation magnetization were vanished due to diffusion and eventual expulsion of the Fe ions from the nanoparticles, in agreement with data obtained from Raman and X-ray photoelectron spectroscopy.     

Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells

The spin-polarized photocurrent is used to study the in-plane electric field dependent spin transport in undoped InGaAs/AlGaAs multiple quantum wells. In the temperature range of 77–297 K, the spin-polarized photocurrent shows an anisotropic spin transport under different oriented in-plane electric fields. We ascribe this characteristic to two dominant mechanisms: the hot phonon effect and the Rashba spin-orbit effect which is influenced by the in-plane electric fields with different orientations. The formulas are proposed to fit our experiments, suggesting a guide of potential applications and devices.     

Injection of material from a two-component sample into an electrical discharge plasma

A mathematical model is proposed for the process of injection of material from a two-component sample of limited weight into a discharge plasma in atomic emission spectral analysis. An analytical expression is obtained for the time dependence of the intensity of the spectral line for the element associated with a small impurity. It is shown that based on the ratio of the volatility factors for the impurity material and the matrix, three groups of analyte elements can be isolated with similar injection behavior. Comparison of the theoretical and experimental results shows their qualitative agreement.     

不同材料弹体超声速侵彻钢筋混凝土靶的结构破坏对比实验

设计了超声速钻地结构弹,采用203 mm口径的火炮,开展了25 kg量级弹体在1100~1300 m/s速度范围内侵彻钢筋混凝土靶的实验研究,应用数值仿真对弹体侵彻钢筋混凝土靶的过程进行了模拟计算。基于实验和仿真结果,对超声速侵彻条件下两种金属材料弹体的结构响应、质量损失等问题进行了分析。结果表明:在超声速侵彻钢筋混凝土靶的过程中,两种金属材料的弹体结构变形破坏形式主要为头部侵蚀和侧壁磨蚀,头部侵蚀量的大小与弹体壳体材料有关,高强度G50钢材料更适合用于1200 m/s速度量级的超声速侵彻环境。对出现的“径缩”现象作了初步分析,并对今后工程应用的结构弹体设计提出了指导意见。