Electronic structure of the CuBS2 crystal

The band structure and spectra of the total and projected densities of states of a new crystal of the chalcopyrite family, namely, CuBS₂, have been calculated in terms of the density functional theory. It has been found that the crystal is a pseudo-direct-band-gap semiconductor, and the best theoretical estimate of the optical band gap is 3.44 eV. The upper valence band of the CuBS₂ crystal basically consists of the contributions from the p states of S atoms and the d states of Cu atoms. The crystal splitting is 0.2 eV. The bottom of the conduction band is basically formed by the sp states of boron and sulfur atoms with an admixture of the s states of copper atoms.     

Studies on energy band structure of NbC and NbN using DFT

Energy band structure of NbC and NbN are calculated using generalized gradient approximation (GGA) within density functional theory (DFT) including five high symmetry points W, L, Γ, X and K. The lowest band corresponds to 2s band of non metal (C and N) atoms and the next lowest band is formed by 2p nonmetal. The decomposing points of t _2g states (Γ ₂₅), e _g states (Γ ₁₂) and C or N 2p states (Γ ₁₅) show interesting behavior different from earlier reports.     

铂掺杂扶手椅型石墨烯纳米带的电学特性研究

本文采用基于密度泛函理论(DFT)的第一性原理计算了铂原子填充扶手椅型石墨烯纳米带(AGNR)中双空位结构的电学性能.计算结果表明: 通过控制铂原子的掺杂位置, 可以实现纳米带循环经历小带隙半导体—金属—大带隙半导体的相变过程; 纳米带边缘位置是铂原子掺杂的最稳定位置, 边缘掺杂纳米带的带隙值随宽度的变化与本征AGNR一样可用三簇曲线表示, 但在较大宽度时简并成两条曲线, 一定程度上抑制了带隙值的振荡; 并且铂原子边缘掺杂导致宽度系数N_a = 3p和3p + 1(p是一个整数)的几个较窄纳米带的带隙中出现杂质能级, 有效地降低了其过大的带隙值. 此外, 铂掺杂AGNR的能带结构对掺杂浓度不是很敏感, 从而降低了对实验精度的挑战. 本文的计算有利于推动石墨烯纳米带在纳米电子学方面的应用.     

Band structure of the superconducting MgB2 compound and modeling of related ternary systems

Band structure of a novel superconductor—magnesium diboride—is studied by the self-consistent FP-LMTO method. Density of states near the Fermi level of MgB₂ and its electronic properties are governed by the metal-like boron 2p orbitals in the planar network of boron atoms. The modification of the band structure of MgB₂ upon doping the boron (with Be, C, N, and O substitutional impurities) and the magnesium (with Be, Ca, Li, and Na substitutional impurities) sublattices or upon the introduction of structural vacancies (boron nonstoichiomety) is analyzed. The electronic structures of MgB₂ and hypothetical CaB₂ are also studied as functions of pressure.     

Anderson localization and the pseudogap in the energy spectrum of holes in PbTe: Tl under resonant scattering

This paper reports on a comprehensive study of the effect of additional doping with the Na acceptor impurity on the low-temperature resistivity of PbTe samples doped with Tl (2 at %), an impurity producing a band of resonant states within the valence-band spectrum. By additional doping with Na, we have shifted the Fermi level within the band of the resonant states of Tl in PbTe and varied the hole filling (k _h ) of the thallium impurity states. The larger part of the PbTe: (Tl,Na) samples transfers to the superconducting state with a critical temperature T _c = 0.4–2.3 K. The T _c (k _h ) relation obtained argues for the fact that, in the region of resonant states in PbTe: Tl, Anderson localization of holes and a pseudogap in the density of delocalized states are observed.     

Ab initio modelling of band states in doped diamond

Presented in this study is an analysis of the electronic properties of doped diamond calculated using the Vienna ab initio simulation package, employing density functional theory within the generalized-gradient approximation. The dopants studied here have been inserted substitutionally into a 64-atom diamond supercell and include the single-electron acceptors boron and aluminium, the single-electron donors nitrogen and phosphorus and the double-electron donors oxygen and sulphur. Co-doping of diamond with sulphur and boron has also been briefly examined. The doped supercells have been relaxed, followed by calculation of electronic properties from the electronic density of states such as the indirect bandgap E _g, the valence bandwidth and an examination of the acceptor and donor states in the bandgap. It is anticipated that this study will provide a useful comparison of the third- and fourth-row donors and acceptors in diamond.     

Insulator-superconductor-metal transitions induced by spin fluctuations in the paramagnetic phase of doped insulators

AbstractThe band structure of cuprates as a doped 2D insulator is modeled assuming that the excess charge carriers are associated with the corresponding substitution atoms, and the phase diagram of the paramagnetic states as a function of the degree x of doping at zero temperature is studied. The Hamiltonian contains electronic correlations on impurity orbitals and hybridization between them and the initial band states of the insulator. It is shown that the change in the electronic structure of a doped compound includes the formation of impurity bands of distributed and localized electronic states in the initial insulator gap. It is established that in the case of one excess electron per substitution atom the spin fluctuations (1) give rise to an insulator state of the doped compound for x < x _thr, 1, (2) lead to a superconducting state for x _thr, 1 < x < x _thr, 2, and (3) decay as x > x _thr, 2 increases further, and the doped compound transforms into a paramagnetic state of a “poor” metal with a high density of localized electronic states at the Fermi level.     

Competition mechanism between singlet and triplet superconductivity in the tight-binding model with anisotropic attractive potential

Based upon the tight-binding formalism a model of a high-T_c superconductor with isotropic and anisotropic attractive interactions is considered analytically. Symmetry facets of the group C_4v are included within a method of successive transformations of the reciprocal space. Complete sets of basis functions of C_4v irreducible representations are given. Plausible spin-singlet and spin-triplet superconducting states are classified with regard to the chosen basis functions. It is displayed that pairing interaction coefficients and the dispersion relation, which can be characterized by the parameter η= 2t₁/t₀, have a diverse and mutually competing influence on the value of the transition temperature. It is also shown that in the case of a nearly half-filled conduction band and an anisotropic pairing interaction the spin-singlet d-wave symmetry superconducting state is realized for small values of the parameter η, whereas in the opposite limit, for sufficiently large values, the spin-triplet p-wave symmetry superconducting state has to be formed. This result cannot be obtained within the Van Hove scenario or BCS-type approaches, where the p-wave symmetry superconducting state absolutely dominates. The specific heat jump and the isotope shift as functions of the parameter η are assessed and discussed for the d-wave symmetry singlet and the p-wave symmetry triplet states.     

Influence of the nearest environment symmetry on the character of the <Emphasis Type="Italic">p-d</Emphasis> interaction in binary copper sulfides

The energy structure of copper sulfides CuS and CuS₂ has been theoretically investigated by the modified method of associated plane waves (WIEN2k program). CuS is considered in two different cubic modifications of the sphalerite and NaCl (hypothetical) types, in which Cu atoms are in different coordinations. The density distribution of the electronic p states of sulfur and d states of copper are calculated taking into account the separation into the e _g and t _2g states. The specific features of these distributions are interpreted.     

Atomic and electronic structures of a grain boundary in iron with impurity segregation

We present a short review on our current investigations of the atomic and electronic structures of a grain boundary in iron. Atomic structures of grain boundaries were simulated and the local electronic densities of states were calculated in the simulated structure. When phosphorus impurity atoms segregated at the grain boundaries in iron, trigonal prismatic FeP clusters were formed. Segregated boron atoms tended to stay at the central site of polyhedra constructed by host atoms in the grain boundaries. The non-bonding states of the iron atom at the grain boundary disappear by forming a strong bonding orbital with the orbital of the segregated impurity atom. This bonding orbital is formed in a Fe3d host band in the case of a boron impurity. On the other hand, the bonding orbital is formed at lower energies for the phosphorus impurity and is less-mixed with the Fe3d host band. Non-bonding states are formed around the Fe₉P clusters. These can give a qualitative explanation for the embrittlement of the impurity segregated grain boundary. Finally, we can explain from the viewpoint of the electronic structure why the interstitial impurity is the only cohesive enhancer.     

Superconductivity in heavily vacant diamond

Using first principle electronic structure calculations we investigated the role of substitutional doping of B, N, P, Al and vacancies (V) in diamond (X_αC_1-α). In the heavy doping regime, at about ∼1-6% doping an impurity band appears in the mid gap. Increasing further the concentration of the impurity substitution fills in the gap of the diamond host. Our first principle calculation indicates that in the case of vacancies, a clear single-band picture can be employed to write down an effective one band microscopic Hamiltonian, which can be used to further study various many-body and disorder effects in impurity band (super)conductors.     

DFT study on electronic structure and optical properties of N-doped,S-doped,and N/S co-doped SrTiO3

The electronic structures and optical properties of N-doped, S-doped and N/S co-doped SrTiO₃ have been investigated on the basis of density functional theory (DFT) calculations. Through band structure calculation, the top of the valence band is made up of the O 2p states for the pure SrTiO₃. When N and S atoms were introduced into SrTiO₃ lattice at O site, the electronic structure analysis shows that the doping of N and S atoms could substantially lower the band gap of SrTiO₃ by the presence of an impurity state of N 2p on the upper edge of the valence band and S 2p states hybrid with O 2p states, respectively. When the N/S co-doped, the energy gap has further narrowing compared with only N or S doped SrTiO₃. The calculations of optical properties also indicate a high photo response for visible light for N/S co-doped SrTiO₃. Besides, we find a new impurity state which separates from the O 2p states could improve the photocatalytic efficiency and we also propose a model for light electron-hole transportation which can explain the experiment results well. All these conclusions are in agreement with the recent experimental results.     

UV absorption in metal decorated boron nitride flakes: a theoretical analysis of excited states

The excited states of single metal atom (X = Co, Al and Cu) doped boron nitride flake (MBNF) B₁₅N₁₄H₁₄-X and pristine boron nitride (B₁₅N₁₅H₁₄) are studied by time-dependent density functional theory. The immediate effect of metal doping is a red shift of the onset of absorption from about 220 nm for pristine BNF to above 300 nm for all metal-doped variants with the biggest effect for MBNF-Co, which shows appreciable intensity even above 400 nm. These energy shifts are analysed by detailed wavefunction analysis protocols using visualisation methods, such as the natural transition orbital analysis and electron-hole correlation plots, as well as quantitative analysis of the exciton size and electron-hole populations. The analysis shows that the Co and Cu atoms provide strong contributions to the relevant states whereas the aluminium atom is only involved to a lesser extent.     

First-principles study on electronic and optical properties of Cu-doped LiF with Li vacancy

Taken into account the presences of Li vacancy (V_Li), we calculate the formation energy, electronic structure and optical properties of Cu doped LiF (LiF:Cu) by using the density functional theory. The presence of V_Li leads to a decrease of the formation energies of Cu, in favor of Cu doping into LiF. Due to Cu doping, an impurity band of Cu-3d states is formed at the Fermi level, which is then split by the introduction of V_Li. A wide absorption band and some new absorption peaks are obtained in LiF:Cu with an adjacent V_Li to Cu. There appears an absorption peak at 9.3 eV, which is consistent with the experiment observation (133 nm). The results are useful for understanding of the optical properties of the doped systems.     

Muonium studies of p-type semi-conducting diamond under conditions of UV-visible illumination

This work reports on the promptly forming fraction and the spin relaxation rate of the isotropic muonium (Mu_T) component in p-type semi-conducting diamond, measured under the condition of illumination. The data are the first such investigations for diamond. A broad band illumination with wavelengths ranging from 0.5 μm to 3 μm was obtained from a Xenon lamp. The energy of the photons was sufficient to excite electrons from the valence band to the 0.28 ppm boron impurity band (0.37 eV). The Transverse Field Muon Spin Rotation (TF-μSR) measurements were conducted as a function of temperature, ranging from 5 K to 300 K. An illumination effect at temperatures below 100 K is observed. It is not yet clear from these data whether the effect is due to Mu_t scattering off delocalized holes, which are removed by illumination or whether there is prompt trapping of Mu_t at boron impurities (passivation) which is affected by illumination. This revised version was published online in August 2006 with corrections to the Cover Date.     

Doping effects on metallic and semiconductor single-wall carbon nanotubes

In this paper we investigate nitrogen- and boron-doped zigzag and armchair single-wall carbon nanotubes (SWNTs) with theoretical models based on the density functional theory. We take into account nitrogen and boron doping for two isomers in which substitutive atoms are on opposite sides of the tube, but only in one isomer the impurity sites are symmetrical with respect to the diameter. The band structures show a strong hybridization with impurity orbitals that change the original band structure. Although the two isomers of armchair SWNT exhibit the same formation energy, their band structures are different. Indeed asymmetrical isomers are gapless and exhibit a crossing of valence and conduction bands at k?=?π/c, leading to metallic SWNTs. Band structures of symmetrical isomers, on the other hand, exhibit an energy gap of 0.4?eV between completely filled valence and empty conduction bands. We use density of charge in order to understand this difference. In zigzag SWNT an impurity band is introduced in the energy gap and for N doping this band is just partially occupied in such a way that the electronic behaviour is reversed from semiconductor to metallic. Whereas for a given isomer armchair SWNT shows similar behaviours of N- and B-doped structures, B-doped zigzag SWNTs present different band structure and occupation compared to the N-doped case.     

Ground-state properties of boron-doped diamond

Boron-doped diamond undergoes an insulator-metal or even a superconducting transition at some critical value of the dopant concentration. We study the equilibrium lattice parameter and bulk modulus of boron-doped diamond experimentally and in the framework of the density functional method for different levels of boron doping. We theoretically consider the possibility for the boron atoms to occupy both substitutional and interstitial positions and investigate their influence on the electronic structure of the material. The data suggest that boron softens the lattice, but softening due to substitutions of carbon with boron is much weaker than due to incorporation of boron into interstitial positions. Theoretical results obtained for substitution of carbon are in very good agreement with our experiment. We present a concentration dependence of the lattice parameter in boron-doped diamond, which can be used for to identify the levels of boron doping in future experiments. The text was submitted by the authors in English.     

First-principles study of electronic structures and optical properties of Cu, Ag, and Au-doped anatase TiO2

We perform first-principles calculations to investigate the band structure, density of states, optical absorption, and the imaginary part of dielectric function of Cu, Ag, and Au-doped anatase TiO₂ in 72 atoms systems. The electronic structure results show that the Cu incorporation can lead to the enhancement of d states near the uppermost of valence band, while the Ag and Au doping cause some new electronic states in band gap of TiO₂. Meanwhile, it is found that the visible optical absorptions of Cu, Ag, and Au-doped TiO₂, are observed by analyzing the results of optical properties, which locate in the region of 400-1000 nm. The absorption band edges of Cu, Ag, and Au-doped TiO₂ shift to the long wavelength region compared with the pure TiO₂. Furthermore, according to the calculated results, we propose the optical transition mechanisms of Cu, Ag, and Au-doped TiO₂. Our results show that the visible light response of TiO₂ can be modulated by substitutional doping of Cu, Ag, and Au.     

Crystallographic investigations and comparison of superconducting and nonsuperconducting CeCu2Si2

Two samples of CeCu _x Si₂ withx=1.8 (non superconducting) andx=2.2 (superconducting) have been investigated by neutron powder diffraction. Both samples were characterized crystallographically and then their impurity content and lattice site occupation were determined. Anisotropic thermal vibrations of the Cu and Si atoms is detected at low temperatures. A relationship between the structural parameterz (defining the distance Ce to Si) and the occurance of superconductivity is suggested.     

Raman spectroscopy of the BC3 phase obtained under high pressure and high temperature

A direct transformation of the g‐BC₃ phase to a new diamond‐like d‐BC₃ phase was observed in a diamond‐anvil cell (DAC) at high temperature, 2033 ± 241 K, and high pressure, 50 GPa. Analysis of the peak positions of the d‐BC₃, B₄C, α‐boron, and the boron‐doped diamond leads to the conclusion that the positions of the peaks of the d‐BC₃ are more similar to the peak pattern of the boron‐doped diamond rather than that of boron carbide, α‐boron. Copyright © 2007 John Wiley & Sons, Ltd.