All-Solid-State Nd:YAG Laser Operating at 1064nm and 1319nm under 885nm Thermally Boosted Pumping

We report a high-effciency Nd：YAG laser operating at 1064 nm and 1319nm, respectively, thermally boosted pumped by an all-solid-state Q-switched Ti：sapphire laser at 885 nm. The maximum outputs of 825.4 m W and 459.4mW, at 1064nm and 1319nm respectively, are obtained in a 8-ram-thick 1.1 at.% Nd：YAG crystal with 2.1 W of incident pump power at 885nm, leading to a high slope efficiency with respect to the absorbed pump power of 68.5% and 42.0%. Comparative results obtained by the traditional pumping at 808nm are presented, showing that the slope efficiency and the threshold with respect to the absorbed pump power at 1064nm under the 885nm pumping are 12.2% higher and 7.3% lower than those of 808rim pumping. At 1319nm, the slope efficiency and the threshold with respect to the absorbed pump power under 885nm pumping are 9.9% higher and 3.5% lower than those of 808 nm pumping. The heat generation operating at 1064 nm and 1319 nm is reduced by 19.8% and 11.1%, respectively.     

Characteristics of Nd：GdVO4 Laser with Different Nd-Doping Concentrations

We report the properties of a compact diode-pumped continuous-wave Nd：GdV04 laser with a linear cavity and different Nd-doped laser crystals. In a 0.2at.% Nd-doped Nd：GdVO4 laser, 1.54 W output laser power is achieved at 912nm wavelength with a slope efficiency of 24.8% at an absorbed pump power of 9.4W. With 0.3at.% Nd-doping concentration, we can obtain the either single-wavelength emission at 1064nm or 912nm or the dual-wavelength emission at 1064nm and 912nm by controlling the incident pump power. From an incident pump power of 11.6 W, the 1064nm emission between ^4Fa/2 and ^4I11/2 is suppressed completely by the 912nm emission between ^4Fa/2 and ^4I9/2. We obtain 670 mW output of the 912nm single-wavelength laser emission with a slope efficiency of 5.5% by taking an incident pump power of 18.4 W. Using a Nd：GdV04 laser with 0.4at.% Nd-doping concentration, we obtain either the single-wavelength emission at 1064nm or the dual-wavelength emission at both 1064nm and 912nm by increasing the incident pump power. We observe a strong competition process in the dualavelength laser.     

Nd:YAG Lasers Operating at 1064nm and 946nm by Direct Pumping and Thermally Boosted Pumping

We demonstrate a 1064nm Nd：YAG laser by directly pumping into the upper lasing level with a tunable Ti：sapphire laser. The valid wavelength is demonstrated at 868.3nm, 875.2nm, 883.8nm, and 885.5nm, respectively. To our knowledge, this is the first time that 1064nm Nd：YAG laser pumped by 875.2nm laser. In addition, laser wavelength at 946 nm is also generated by direct pumping together with traditional pumping.     

Design and Fabrication of Polarization-Independent Micro-Ring Resonators

Origin of polarization sensitivity of photonic wire waveguides （PWWs） is analysed and the effective refractive indices of two different polarization states are calculated by the three-dimensional full-vector beam propagation method. We find that PWWs are polarization insensitive if the distribution of its refractive index is uniform and the cross section is square. An MRR based on such a polarization-insensitive PWW is fabricated on an 8-inch silicon-on-insulator wafer using 248-nm deep ultraviolet lithography and reactive ion etching. The quasi-TE mode is resonant at 1542.25nm and 1558.90nm, and the quasi-TM mode is resonant at 1542.12nm and 1558.94nm. The corresponding polarization shift is 0. 13 nm at the shorter wavelength and 0.04 nm at the longer wavelength. Thus the fabricated device is polarization independent. The extinction ratio is larger than 10dB. The 3dB bandwidth is about 2.Snm and the Qvalue is about 620 at 1558.90nm.     

Optimization of optical parametric chirped pulse amplification with different pump wavelengths

Optical parametric chirped pulse amplification with different pump wavelengths was investigated using LBO crystal, at signal central wavelength of 800 nm. According to our theoretical simulation, when pump wavelength is 492.5 nm, there is a maximal gain bandwidth of 190 nm centered at 805 nm in optimal noncollinear angle using LBO. Presently, pump wavelength of 492.5 nm can be obtained from second harmonic generation of a Yb:Sr₅(PO₄)₃F laser. The broad gain bandwidth can completely support ∼6 fs with a spectral centre of seed pulse at 800 nm. The deviation from optimal noncollinear angle can be compensated by accurately tuning crystal angle for phase matching. The gain spectrum with pump wavelength of 492.5 nm is much better than those with pump wavelengths of 400, 526.5 and 532 nm, at signal centre of 800 nm.     

An All-Solid-State Tunable Dual-Wavelength Ti：Sapphire Laser with Quasi-Continuous-Wave Outputs

A high power dual-wavelength Ti：sapphire laser system with wide turning range and high efficiency is described, which consists of two prism-dispersed resonators pumped by an a11-solid-state frequency-doubled Nd：YAG laser. Tunable dual-wavelength outputs, with one wavelength range from 750nm to 795nm and the other from 80Ohm to 850nm, have been demonstrated. With a pump power of 23 W at 532nm, a repetition rate of 6.5kHz and a pulse width of 67.6ns, the maximum dual-wavelength output power of 5.6 W at 785.3nm and 812.1 run, with a pulse width of 17.2ns and a line width of 2nm, has been achieved, leading to an optical-to-optical conversion efficiency of 24.4%.     

Synthesis and optical properties of nanocrystalline ZnO powders prepared by a direct thermal decomposition route

This paper reports the synthesis and optical properties of nanocrystalline ZnO powders with crystallite sizes of 32.5 (±1.4)–43.4 (±0.4) nm prepared by a direct thermal decomposition of zinc acetate at the temperatures of 400, 500, 600, and 700°C for 4 h. The structure of the prepared samples was studied by XRD and FTIR spectroscopy, confirming the formation of wurtzite structure. The morphology of the samples revealed by SEM was affected by the thermal decomposition temperature, causing the formations of both nanoparticles and nanorods with different size and shape in the samples. The synthesized powders exhibited the UV absorption below 400 nm (3.10 eV) with a well defined absorption peak at around 285 nm (4.35 eV). The estimated direct bandgaps were obtained to be 3.19, 3.16, 3.14, and 3.13 eV for the ZnO samples thermally decomposed at 400, 500, 600, and 700°C, respectively. All the samples exhibited room-temperature photoluminescence (PL) showing a strong UV emission band at ∼395 nm (3.14 eV), a weak blue band at ∼420 nm (2.95 eV), a blue–green band at ∼485 nm (2.56 eV), and a very weak green band at ∼529 nm (2.35 eV). The mechanisms responsible for photoluminescence of the samples are discussed.     

Passively Q-switched Nd:YAG pumped UV lasers at 280 and 374 nm

Pulsed UV lasers at the wavelengths of 374 and 280 nm are realized by cascaded second harmonic generation (SHG) and sum frequency generation (SFG) processes using a Nd:YAG laser at 1123 nm. The Nd:YAG laser is longitudinally pumped and passively Q-switched, and it has a high peak power of 3.2 kW. The UV peak powers at 280 and 374 nm are 100 and 310 W, with pulse lengths of 6 and 8 ns, respectively. Spectral broadening of 374 nm laser by stimulated Raman scattering is studied in single mode pure silica core UV fiber. Realizations of UV lasers enabling compact design at 280 and 374 nm wavelengths are demonstrated.     

All-diode-laser cooling of single Ca+ ions

+ ions. The Ca⁺ ions are trapped in a miniature rf Paul trap and irradiated by light from a frequency-doubled diode laser at 397 nm and by light from a diode laser at 866 nm. We are able to cool a single ion and observe its fluorescence continuously with the laser diode locked to the external frequency-doubling cavity. Quantum jumps in the fluorescence light of a single ion and of a small cloud of five ions have been induced by driving the “clock” transition at 729 nm. We were able to resolve the influence of the micromotion on the excitation spectrum of the small ion cloud. Received: 10 July 1997/Revised version: 17 November 1997     

An 8.1 W diode pumped solid-state quasi-continuous-wave yellow laser at 589 nm by intracavity sum-frequency mixing generation

We report an L-shaped symmetrical co-folding-arm plane-plane diode pumped solid-state yellow laser at 589 nm by using intracavity sum-frequency mixing. By carefully designing the cavity and employing various techniques to optimize the laser’s specifications, a quasi-continuous-wave (QCW) free-oscillation yellow laser source, which has an average output power of 8.1 W, a beam quality factor of M² = 2.3, and a repetition rate of 1.1 kHz, is developed. The generation of yellow laser at 589 nm is achieved by intracavity sum-frequency mixing between the laser lines at 1319 nm and 1064 nm of an Nd:YAG laser in a KTP crystal. To the best of our knowledge, the 8.1 W output at 589 nm is higher than any other diode pumped solid-state yellow laser generated by intracavity sum-frequency generation so far.     

Diode-pumped Nd:YVO4-Nd:CNGG crystals blue laser at 462 nm by intracavity sum-frequency-mixing

We report a laser architecture to obtain continuous-wave (cw) blue radiation at 462 nm. A 808 nm diode-pumped the Nd:YVO₄ crystal emitting at 914 nm. A part of the pump power was then absorbed by the Nd:YVO₄ crystal. The remaining was used to pump the Nd:CNGG crystal emitting at 935 nm. Intracavity sum-frequency mixing at 914 and 935 nm was then realized in a LiB₃O₅ (LBO) crystal to reach the blue radiation. We obtained a continuous-wave output power of 892 mW at 462 nm with a pump laser diode emitting 18.4 W at 808 nm.     

Optical properties of a 5 m echelle vacuum spectrometer with an approximately diffraction-limited resolving power in the order of 106

The image formation and the spectral resolution of a 5m echelle spectrometer were investigated. As shown in this study, the spectrometer operates approximately diffraction-limited in the visible and uv, whereas in the vacuum uv (120.0 nm) the resolving power is still >54% of the diffraction-limited value. The spectrometer was designed according to the results of an analytical imaging theory. Residual optical aberrations were investigated by measuring the image distributions at four wavelengths between 120.0 and 632.8 nm (grating replaced by a plane mirror), in order to experimentally test the reliability of these theoretical results in combination with the influence of the imperfections of the optical components. The ratios of 40%-widths of the measured image distributions in the exit slit plane to the corresponding theoretical values were determined to be 0.56 at 120.0 nm, 0.68 at 174.0 nm, 0.74 at 257.3 nm, and 0.99 at 632.8 nm. Due to a lack of suitable light sources in the vacuum uv with sufficiently small band widths, the instrumental functions of the spectrometer could only be measured at 257.3, at 514.5, and at 632.8 nm, using stabilized and frequency doubled laser lines. The resolving powersR, which were deduced from the 40%-widths of the measured instrumental functions, were determined to be 1.42×10⁶ [0.80] at 257.3 nm, 0.86×10⁶ [0.97] at 514.5 nm, and 0.71×10⁶ [0.98] at 632.8nm (ratiosR ^exp/R ^theor in brackets). The comparatively high resolving powerR≳0.02×10⁶ [0.54] at 120.0 nm was estimated from the 40%-width of the measured image distribution.     

Photochemical etching of GaAs with Cl2 induced by synchrotron radiation

The quality and efficiency of etching at room temperature is determined in the wavelength range from 105 nm to 300 nm by replicating a mask on a GaAs(100) wafer and by wavelength selection of synchrotron radiation with filters and a monochromator. A good anisotropy and selectivity is found for Cl₂ pressures from 10^–2 mbar up to 1.5 mbar, but above 3 mbar the selectivity is lost. Efficiencies for stimulation of the chlorination reaction and for desorption are separated and an optimal efficiency for stimulation of about 100 removed Ga and As atoms per photon is obtained around a wavelength of 122 nm at 1.5 mbar. Growth of reaction products on the surface occurs for short wavelengths and transport processes through layers up to a thickness of 350 nm are relevant. The efficiency and quality of etching can be improved by additional desorption with long wavelengths especially with lasers.     

Deposition and characterization of ITO films produced by laser ablation at 355 nm

Indium tin oxide (ITO) films have been deposited by pulsed laser deposition (PLD) at 355 nm. Even though the absorption of laser light at the wavelength 355 nm is much smaller than that of the standard excimer lasers for PLD at 248 nm and 193 nm, high-quality films can be produced. At high fluence and at high substrate temperatures, the specific resistivity of the films, 2–3×10^-4 Ω cm, is comparable to values obtained with excimer lasers, whereas the resistivities obtained at room temperature are somewhat higher than those of films produced by excimer lasers. The transmission coefficient of visible light, about 0.9, is also comparable to values for films deposited by excimer lasers. The crystalline structure of films produced at 355 nm is similar to that of samples produced by these lasers. Received: 16 January 2001 / Accepted: 24 July 2001 / Published online: 17 October 2001     

Realization of MMI Power Splitter by UV-light Imprinting Technique Using Hybrid Sol-Gel SiO2 Materials

An efficient fabrication scheme of buried ridge waveguide devices is demonstrated by UV-light imprinting technique using organic-inorganic hybrid sol-gel Zr-doped SiO2 materials. The refractive indices of a guiding layer and a cladding layer for the buried ridge waveguide structure are 1.537 and 1.492 measured at 1550nm, respectively. The tested results show more circular mode profiles due to existence of the cladding layer. A buried ridge single-mode waveguide operating at 1550 nm has a low propagation loss （0.088 dB/cm） and the 1× 2 MMI power splitter exhibits uniform outputs, with a very iow splitting loss of 0.029 dB at 1549nm.     

Nonlinear optical properties of a new two-photon-absorption organic dye: HEASPS

Trans-4-[p-(N-hydroxyethyl-N-ethylamino)styryl]-N-methylpyridinium p-toluene sulfonate (abbreviated as HEASPS) is a two-photon-absorption (TPA) dye newly synthesized by our research group. It possesses a much larger TPA cross-section and much stronger upconversion fluorescence emission than those of common organic dyes (such as rhodamine) when excited with near-infrared (IR) radiation. TPA spectrum and upconversion efficiency spectrum of HEASPS solution at different wavelengths have been measured. The largest molecular TPA cross-section σ₂ ^′ is measured to be 2.06×10^-47 cm⁴ s/photon at 930 nm. At 1064 nm, σ₂ ^′ is 2.71×10^-48 cm⁴ s/photon, which is only one-ninth of that at 930 nm. The upconverted lasing efficiency spectrum has been measured at different wavelengths. The highest efficiency is 5.1% at 1020 nm, whereas it is 3.5% at 1064 nm. Its optical-power-limiting properties at 930 nm have also been illustrated. Received: 30 November 2000 / Published online: 27 April 2001     

Formation of amorphous Al1−x Au x films as a consequence of low-temperature Al/Au-interface reactions in a multilayered system

Al/Au multilayers (average composition Al₂Au, individual layer thicknesses 1 nm Al and 0.71 nm Au) are prepared at 90 K by ion beam sputtering. The electrical resistance of the growing films is monitored in situ. From the results obtained in this way it can be concluded that interface reactions occur transforming the ultrathin layers into an amorphous phase, which is stable up to 255 K.For larger individual layer thicknesses (2.1 nm Au and 3 nm Al), the interface reaction into the amorphous state is incomplete. Based on a simple parallel-resistor model, one finds that the interface reaction into the amorphous phase is restricted to a thickness of less than 3.5 nm. The temperature dependence of the resistance of such thicker multilayers indicates the onset of interdiffusion of the yet unreacted material at T=200 K resulting in the crystalline Al₂Au-phase.     

Generation of subpicosecond vacuum ultraviolet pulses at 126 nm by using harmonics of a subpicosecond Ti:Sapphire laser

Subpicosecond vacuum ultraviolet (VUV) pulses at the wavelength of 126 nm have been generated in rare gases as a result of the 7th harmonic radiation of a subpicosecond Ti:Sapphire laser oscillating at 882 nm. The VUV harmonic intensity was optimized in Xe at the pressure of 1.2 Torr. The behavior of the harmonic emission was qualitatively reproduced by the classical nonlinear optics. The increase of the harmonic intensity was limited by multiphoton ionization of Xe.     

Laser Induced Damage Threshold at 355 and 1064nm of Ta2O5 Films of Different Phases

Ta2O5 films axe deposited on fused silica substrates by conventional electron beam evaporation method. By annealing at different temperatures, Ta2 O5 films of amorphous, hexagonal and orthorhombic phases are obtained and confirmed by x-ray diffractometer （XRD） results. X-ray photoelectron spectroscopy （XPS） analysis shows that chemical composition of all the films is stoichiometry. It is found that the amorphous Ta2 O5 film achieves the highest laser induced damage threshold （LIDT） either at 355 or 1064nm, followed by hexagonal phase and finally orthorhombic phase. The damage morphologies at 355 and 1064nm are different as the former shows a uniform fused area while the latter is centred on one or more defect points, which is induced by different damage mechanisms. The decrease of the LIDT at 1064nm is attributed to the increasing structural defect, while at 355nm is due to the combination effect of the increasing structural defect and decreasing band gap energy.     

Laser action in an indium hollow cathode discharge

Hollow cathode discharge excitation of indium is shown to produce laser action at 468.1, 689.2, 1342.8, and 1720nm. The cw468.1 nm and 1720 nm ionic lines are excited by charge exchange effect whereas the 689.2 nm cw ionic line is excited by a radiative cascade. The 1342.8 nm atomic line appears in the afterglow of the pulsed discharge and its population inversion is produced by recombination of the indium ions and the electrons. Shanghai Institute of Optics and Fine-Mechanics, Academia Sinica. Research Fellow 1979–1980 of the Alexander-von-Humboldt-Stiftung