Subsolidus phase relations and crystal structures of the mixed-oxide phases in the In2O3-WO3 system

Subsolidus phase relationships in the In₂O₃-WO₃ system at 800-1400°C were investigated using X-ray diffraction. Two binary-oxide phases—In₆WO₁₂ and In₂(WO₄)₃—were found to be stable over the range 800-1200°C. Heating the binary-oxide phases above 1200°C resulted in the preferential volatilization of WO₃. Rietveld refinement was performed on three structures using X-ray diffraction data from nominally phase-pure In₆WO₁₂ at room temperature and from nominally phase-pure In₂(WO₄)₃ at 225°C and 310°C. The indium-rich phase, In₆WO₁₂, is rhombohedral, space group (rhombohedral), with Z=1, a=6.22390(4) Å, α=99.0338(2)° [hexagonal axes: a_H=9.48298(6) Å, c=8.94276(6) Å, a_H/c=0.9430(9)]. In₆WO₁₂ can be viewed as an anion-deficient fluorite structure in which 1/7 of the fluorite anion sites are vacant. Indium tungstate, In₂(WO₄)₃, undergoes a monoclinic-orthorhombic transition around 250°C. The high-temperature polymorph is orthorhombic, space group Pnca, with a=9.7126(5) Å, b=13.3824(7) Å, c=9.6141(5) Å, and Z=4. The low-temperature polymorph is monoclinic, space group P2₁/a, with a=16.406(2) Å, b=9.9663(1) Å, c=19.099(2) Å, β=125.411(2)°, and Z=8. The structures of the two In₂(WO₄)₃ polymorphs are similar, consisting of a network of corner sharing InO₆ octahedra and WO₄ tetrahedra.     

Cr2(WO4)3和Cr2(MoO4)3的负热膨胀特性研究

用液相反应-前驱物烧结法制备了Cr₂(WO₄)₃和Cr₂(MoO₄)₃粉体。298～1 073 K的原位粉末X射线衍射数据表明Cr₂(WO₄)₃和Cr₂(MoO₄)₃的晶胞体积随温度的升高而增大, 本征线热膨胀系数分别为(1.274±0.003)×10^-6 K^-1和(1.612±0.003)×10^-6 K^-1。用热膨胀仪研究了Cr₂(WO₄)₃和Cr₂(MoO₄)₃在静态空气中298～1 073 K范围内热膨胀行为，即开始表现为正热膨胀，随后在相转变点达到最大值，最后表现为负热膨胀，其负热膨胀系数分别为(-7.033±0.014)×10^-6 K^-1和(-9.282±0.019)×10^-6 K^-1。     

Mutual spontaneous and electrosurface processes at heterophase interfaces WO<Subscript>3</Subscript>|Me<Subscript>2</Subscript>(WO<Subscript>4</Subscript>)<Subscript>3</Subscript> (Me = In,Eu, Sc)

For the first time ever it is demonstrated in this work that, in spontaneous conditions and following the imposition of an electric field, mutual penetration of components of WO₃ and Me₂(WO₄)₃ occurs at heterophase interfaces WO₃|Me₂(WO₄)₃ where Me = In, Eu, or Sc. Tungstic oxide WO₃ is pulled onto the inner surface of ceramic Me₂(WO₄)₃ and, in turn, components of Me₂(WO₄)₃ penetrate onto the surface of grains of ceramic WO₃, which is confirmed by the method of x-ray—fluorescence analysis. Data concerning the conductivity and transport numbers of Eu₂(WO₄)₃ and a composite on its basis, which was manufactured as a result the electrosurface transport of WO₃, are obtained for the first time ever. With allowance made for the data on the O_2? character of the ionic conduction in MeWO₄ and Eu₂(WO₄)₃ it is concluded that the type of ionic carriers in tungstates (Me ⁿ⁺)_2/n [WO₄] makes no impact on the mechanism of spontaneous and field-induced processes that are developing at the (Me ⁿ⁺)_2/n [WO₄]|WO₃ interfaces.     

High-pressure Raman study of Al2(WO4)3

A high-pressure Raman scattering study of the tungstate Al₂(WO₄)₃ is presented. This study showed the onset of two reversible phase transitions at 0.28±0.07 and 2.8±0.1 GPa. The pressure evolution of Raman bands provides strong evidences that both the transitions involve rotations/tilts of nearly rigid tungstate tetrahedra and that the structure of the stable phase in the 0.28-2.8 GPa range may be the same as the structure of the ambient pressure, low-temperature monoclinic (C_2h⁵) ferroelastic phase of Al₂(WO₄)₃.     

Phase transitions and surface stability of the WO3γ-Al2O3 system

The solid state transitions of the WO₃γ-Al₂O₃ system have been investigated in the temperature range 873–1323 K. The formation of α-Al₂O₃ and Al₂(WO₄)₃ phases and the thermal desorption of W(VI) attached to the γ-Al₂O₃ surface have been studied as function of the treatment time. The inhibition of the phase transition to α-Al₂O₃ and therefore the stabilization of the surface has been observed at 1323 K for samples with 7% WO₃ content. This stabilization is critically affected by the tungsten content. An explanation for the stabilization of the alumina surface is proposed.     

Study on the reactivity of In2O3 in mixtures with ammonium-zeolites

In ground mixtures of In₂O₃ and NH₄Y, incorporation of In⁺ cations into the zeolitic phase occurs upon thermal treatment by partial reductive solid-state ion exchange associated with oxidation of ammonium ions or released ammonia to N₂ and NH₂OH. Cationic InO⁺ species, created in zeolites by reductive solid-state ion exchange of In₂O₃/NH₄-zeolite mixtures in hydrogen atmosphere and subsequent oxidation of the In⁺ lattice cations by oxygen, do not undergo autoreduction up to 970 K. Reductive solid-state ion exchange easily proceeds in carbon monoxide atmosphere at temperatures between 620 and 770 K. The significance of these observations for the use of indium-containing zeolites as catalysts is discussed.     

New transparent conductors with the M7O12 ordered oxygen-deficient fluorite structure: from In4Sn3O12 to In5.5Sb1.5O12

A new transparent conductor, containing pentavalent antimony, In_4+xSn_3−2xSb_xO₁₂, has been synthesized for 0?x?1.5. The latter exhibits an ordered oxygen-deficient fluorite structure with an ordered distribution of Sb⁵⁺ and In³⁺/Sn⁴⁺ species in the octahedral and seven-fold coordinated sites, respectively. More importantly, it is shown that the electronic conductivity of this transparent conducting oxide (TCO) at room temperature, is one order of magnitude larger for x=1 (In₅SnSbO₁₂) than for x=0 (In₄Sn₃O₁₂) and it turns to a semi-metallic behavior in contrast to In₄Sn₃O₁₂ which is a semi-conductor. The potential of this new material, as TCO, is also shown by its reflectance spectra, similar to In₄Sn₃O₁₂, involving only a small increase of the optical bandgap, by 0.15 eV.     

Vibrational spectra of WO3·nH2O and WO3 polymorphs

Vibrational spectra of polycrystalline WO₃ hydrates and polymorphs were measured and analyzed. The effect of sampling techniques on IR spectra has been demonstrated. The phase transition into triclinic polymorph (C⁵_2 h → C¹_i) has been revealed for the sample of monoclinic WO₃ prepared as KBr pellet. Using the deuteration method in situ has shown that cubic WO₃ is non-stoichiometric oxide stabilized by residual OH groups of WO₃·H₂O precursor.     

Catalytic Performance of Re/Ga2O3/WO3/ZrO2 Catalyst for n-Hexane Isomerization

A series of Re/Ga₂O₃/WO₃/ZrO₂ catalysts were prepared by the impregnation method. The crystalline structure, redox, and acid site distribution of the catalysts were characterized by X-ray powder diffraction, temperature-programmed reduction of H₂, and temperature-programmed desorption of NH₃. Their catalytic performance for n-hexane isomerization was studied. The results showed that the addition of Re greatly affected the redox properties and the acid site distribution of the catalysts. Owing to the presence of Re, n-hexane isomerization was catalyzed by metal and acid sites, and thus the conversion of n-hexane and the selectivity for 2,2-dimethylbutane were significantly increased. Under the conditions of 195 °C, 1.0 MPa, LHSV = 1.0 h⁻¹, and n(H₂)/n(C₆) = 2.0, the conversion of n-hexane over 1.0%Re/1.0%Ga₂O₃/WO₃/ZrO₂ is 84.8%, and the selectivities for 2,2-dimethylbutane, i-hexane, and cracking products (C_5-) are 20%, 97.7%, and 2.1%, respectively. The catalyst is stable during 150 h operation.     

Simultaneous determination of In and In2O3 by cyclic voltammetry in the DC and the AC mode

Summary Cyclic voltammetry on solid phases using the carbon-paste electrode (CPE) has been applied to the In- In₂O₃ system. Electrochemical reactions can be recorded more sensitively, and interpretation of the complex processes is simpler with AC voltammetry.Additional electrochemical experiments concerning the condition of formation and the chemical stability of intermediates yielded a model of electrochemical reactions in connection with preliminary and consecutive chemical processes.It is possible to detect unambiguously In and In₂O₃ simultaneously in 1 N HBr, but not in 1 N HCl.

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Simultanbestimmung von In und In₂O₃ durch cyclische Voltammetrie (Gleich- und Wechselstrom)

Zusammenfassung Die cyclische Voltammetrie unter Verwendung der Kohlepasteelektrode wurde am System In- In₂O₃ angewandt. Durch den Einsatz der Wechselstrom-Voltammetrie können die elektrochemischen Reaktionen empfindlicher erfaßt und komplexe Prozesse klarer interpretiert werden.Ergänzende elektrochemische Experimente zur Aufklärung der Bildungsbedingungen und chemischen Stabilität von Zwischenprodukten ergeben ein Modell der elektrochemisch auswertbaren Reaktionen unter Berücksichtigung vor- und nachgelagerter chemischer Prozesse.Es ist in 1 N HBr, nicht aber in 1 N HCl, möglich, In und In₂O₃ eindeutig nebeneinander nachzuweisen.

     

Crystallographic shear in the Nb2O5WO3 and Ta2O5WO3 systems

Crystallographic shear (CS) phases occurring in the Nb₂O₅WO₃ and Ta₂O₅WO₃ systems near to WO₃ were characterized by X-ray diffraction and high-resolution transmission electron microscopy. The Nb₂O₅WO₃ samples were heated at 1600K. They contained ordered {104} and {001} CS planes and wavy CS which were composed of intergrowths of {104} and {001} CS segments. The composition range over which the {104} CS series extended was from (Nb,W)O_2.954 i.e., (Nb,W)₆₅O₁₉₂, to (Nb,W)O_2.942, i.e., (Nb,W)₅₂O₁₅₃. The composition range over which the {001} CS series extended was from (Nb,W)O_2.9375, i.e., (Nb,W)₁₆O₄₇ to (Nb,W)O_2.875, i.e., (Nb,W)₈O₂₃. The Ta₂O₅WO₃ samples were prepared at 1593, 1623, and 1672K. At lower temperatures ordered {103} CS phases were found, with a composition range extending between (Ta,W)O_2.960, i.e., (Ta,W)₅₀O₁₄₈, to (Ta,W)O_2.944, i.e., (Ta,W)₃₆O₁₀₆. At 1673K ordered {103} CS phases occurred, as did wavy CS composed of intergrowths of {103} and {104} CS segments.     

Hydrothermal synthesis of [C6H16N2][In2Se3(Se2)]: A new one-dimensional indium selenide

A new organically templated indium selenide, [C₆H₁₆N₂][In₂Se₃(Se₂)], has been prepared hydrothermally from the reaction of indium, selenium and trans-1,4-diaminocyclohexane in water at 170 °C. This material was characterised by single-crystal and powder X-ray diffraction, thermogravimetric analysis, UV-vis diffuse reflectance spectroscopy, FT-IR and elemental analysis. The compound crystallises in the monoclinic space group C2/c (a=12.0221(16) Å, b=11.2498(15) Å, c=12.8470(17) Å, β=110.514(6)°). The crystal structure of [C₆H₁₆N₂][In₂Se₃(Se₂)] contains anionic chains of stoichiometry [In₂Se₃(Se₂)]²⁻, which are aligned parallel to the [1 0 1] direction, and separated by diprotonated trans-1,4-diaminocyclohexane cations. The [In₂Se₃(Se₂)]²⁻ chains, which consist of alternating four-membered [In₂Se₂] and five-membered [In₂Se₃] rings, contain perselenide (Se₂)²⁻ units. UV-vis diffuse reflectance spectroscopy indicates that [C₆H₁₆N₂][In₂Se₃(Se₂)] has a band gap of 2.23(1) eV.     

A new ferroelastic transition in some A2(MO4)3 molybdates and tungstates

We have found for the first time a ferroelastic transition in many molybdates and tungstates with the Sc₂(MoO₄)₃-type structure. Below the transition these phases are monoclinic ($\text{P2}{}_1\text{a}$), and above the transition they are orthorhombic (Pnca). Observed transition temperatures are: Al₂(MoO₄)₃, 200°C; Al₂(WO₄)₃, ?6°C; Cr₂(MoO₄)₃, 385°C; Fe₂(MoO₄)₃, 499°C; In₂(MoO₄)₃, 335°C; In₂(WO₄)₃, 252°C; and Sc₂(MoO₄)₃, 9°C.     

Crystal structure and electrical conductivity of cubic fluorite-based (YO1.5) x (WO3)0.15(BiO1.5)0.85- x (0?≤ ?x ≤?0.4) solid solutions

(WO₃)_0.15(BiO_1.5)_0.85 exhibits a tetragonal structure derived from the fluorite subcell. The electrical conductivity of (WO₃)_0.15(BiO_1.5)_0.85 is lower than that of Y₂O₃-doped Bi₂O₃. The structure and electrical conductivity of samples formulated as (YO_1.5) _x (WO₃)_0.15(BiO_1.5)_{0.85- x} (x = 0.1, 0.2, 0.3, and 0.4) were investigated. The as-sintered (YO_1.5)_0.1(WO₃)_0.15(BiO_1.5)_0.75 exhibited a single cubic structure that is isostructural with δ-Bi₂O₃. For x = 0.2, 0.3, and 0.4, the as-sintered samples consisted of a cubic fluorite structure and rhombohedral Y₆WO₁₂. After heat treatment at 600 °C for 200 h, the cubic structures are stable for x = 0.1, 0.3, and 0.4. A transformation from cubic to rhombohedral phase after heat treatment at 600 °C for 200 h was observed in the sample originally formulated as (YO_1.5)_0.2(WO₃)_0.15(BiO_1.5)_0.65.     

Thermodynamic study of nonstoichiometric tungsten trioxide WO3−x by EMF measurements at high temperature

The values of ΔG(O₂), ΔH(O₂), and ΔS(O₂) have been determined from electrochemical cell measurements, within the whole homogeneity range of WO_3?x, between 700 and 900°C. The samples have been previously prepared by equilibration of WO₃ pellets with COCO₂ mixtures and their composition has been determined by thermogravimetry. A single phase has been found between WO₃ and WO_2.9760. The results may be understood by considering a structure involving point defects, singly ionized oxygen vacancies V^·_O between WO₃ and WO_2.9880. For larger departure from stoichiometry, the variations of ΔH(O₂) and ΔS(O₂) suggest the formation of more complex defects. The enthalpy of formation of V^·_O has been calculated: 78 kcal · mole^?1.     

Photostimulated changes in WO3 nanosized films

During the irradiation of WO₃ films d = 7–160 nm thick by light at λ = 320 nm (I = (1.5–7) × 10¹⁵ quantum cm⁻² s⁻¹), absorption band at λ = 850 nm appeared along with absorption band edge shift to shorter waves. The subsequent irradiation of samples at λ = 850 nm caused the disappearance of the longwave absorption band. The intrinsic absorption edge of WO₃ films was determined (λ = 320 nm). The degree of transformations of WO₃ films increased under atmospheric conditions as the intensity of incident light and the time of irradiation (1–140 min) grew and as film thickness decreased. A mechanism of photochemical transformations of WO₃ films was suggested. This mechanism included the generation of electron-hole pairs, the recombination of part of nonequilibrium charge carriers, the formation of [eV_a²⁺e] centers, and the isolation of photolysis products.     

Electrical properties of In2O3

Conductivity data for In₂O₃ both from literature and from new measurements are critically compared. They are correlated with atmospheric conditions and temperature. The conductivity data and structural considerations lead to the conclusion that non-stoichiometric In₂O₃ is an n-type semiconductor. Interstitial indium ions are probably the predominant defects.     

Indiumwolframat,In2(WO4)3 – ein In3+ leitender Festkörperelektrolyt

Indium Tungstate, In₂(WO₄)₃ – an In³⁺ Conducting Solid Electrolyte Polycrystalline In₂(WO₄)₃ has been electrochemically characterized and unambiguously identified as an In³⁺ conducting solid electrolyte. By heating, indium tungstate undergoes a phase transition between 250 °C and 260 °C transforming from a monoclinic to an orthorhombic phase for which the conduction properties have been determined. The adopted crystal structure in this high temperature region corresponds to the Sc₂(WO₄)₃ type structure. The electrical conductivity was investigated by impedance spectroscopy in the temperature range 300–700 °C and amounts to about 3.7 · 10^–5 Scm^–1 at 600 °C with a corresponding activation energy of 59.5 kJ/mol. Polarization measurements indicated an exclusive current transport by ionic charge carriers with a transference number of about 0.99. In dc electrolysis experiments, the trivalent In³⁺ cations were undoubtedly identified as mobile species. A current transport by oxide anions was not observed.     

The crystal structure, vibrational and luminescence properties of the nanocrystalline KEu(WO4)2 and KGd(WO4)2:Eu obtained by the Pechini method

The luminescent nanocrystalline KEu(WO₄)₂ and KGd_0.98Eu_0.02(WO₄)₂ have been prepared by the Pechini method. X-ray diffraction, infrared and Raman spectroscopy as well as optical spectroscopy were used to characterise the obtained materials. The crystal structure of KEu(WO₄)₂ was refined in I2/c space group indicating the isostructurality to KGd(WO₄)₂. The size of the crystalline grains depended on the annealing temperature, increasing with the increase of the temperature. The average size of crystallites of both crystals formed at 540 °C was about 50 nm. Vibrational spectra showed noticeable changes as a function of size due to, among others, phonon confinement effect. Luminescence studies did not reveal significant changes for the nanocrystallites with the lowest grain size in comparison with the bulk material. The differences observed in luminescence spectra in form of slight inhomogeneous broadening of the spectral lines and increase of the hypersensitive I_0-2/I_0-1 ratio point to very low symmetry of Eu³⁺ ions and change of the polarisation of the local vicinities of Eu³⁺. X-ray diffraction, vibrational and optical studies showed that the structure of the synthesised nanocrystalline KEu(WO₄)₂ and KGd(WO₄)₂:Eu is nearly the same as that found for the bulk material. The size-driven phase transitions were established for both compounds.     

球状MoS2/WO3复合半导体制备及其对RhB的光催化性能

采用水热法成功制备了MoS₂/WO₃复合半导体光催化剂,分别通过SEM、TEM、EDS、XRD、Raman和DRS对催化剂的形貌,组成及结构进行表征,并用BET模型计算比表面积。对比发现球状MoS₂/WO₃对罗丹明B（RhB）的光降解效率明显高于纯WO₃、片状MoS₂/WO₃复合半导体。针对球状MoS₂/WO₃复合半导体,分别研究了MoS₂不同负载量（0.5%,1%,2%,5%,10%）对RhB光催化降解性能的影响,结果表明MoS₂含量为2%时催化效果最佳。同时,研究了溶液的pH值（pH=1,3,6,7,11）对光催化降解反应活性的影响,结果显示pH=6时降解率最高。当催化剂量增加到1 g·L^-1时,30min后RhB降解率达到96.6%。球状MoS₂/WO₃的瞬态光电流为0.050 6 mA·cm^-2,比纯WO₃提高了2.4倍。经过5次循环实验,球状MoS₂/WO₃复合半导体催化剂仍能保持90%的高降解率。