Saturable absorbers for passive Q-switching of erbium lasers emitting in the region of 3 μm

The phototropic properties of Fe:ZnSe, Co:ZnSe, and Co:ZnS single crystals have been investigated. It is shown that these crystals can be used to advantage as the saturable absorbers in solid-state erbium lasers emitting in the region of the 3-μm range. The absorption cross sections of the ground states of the Co²⁺ ion in the ZnSe (σ_GSA = 11·10⁻²⁰ cm²) and ZnS (σ_GSA = 5.6·10⁻²⁰ cm²) crystals and of the Fe²⁺ ion in the ZnSe (σ_GSA = 50·10⁻²⁰ cm²) crystal at λ = 2.79 μm were determined experimentally. It has been established that the above-indicated crystals in the excited state absorb light weakly. The use of these crystals as passive Q switches made it possible to realize, for the first time, the regime of Q-switching of a Cr,Er:YSGG laser emitting at a wavelength of 2.79 μm. Single pulses with an energy of 60 mJ and a duration of 170 nsec were obtained in the regime of passive Q-switching. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 6, pp. 747–751, November–December, 2005.     

More progressive technology of GaSb single crystal growth

GaSb single crystals were grown by the Czochralski method without encapsulant in an atmosphere of ionized hydrogen. It has been found that the resistivity increased by more than one order of magnitude (0.8–1.0Ω cm) and free carrier concentration decreased to the value of (1–2) × 10¹⁶ cm⁻³ in comparison with the crystals grown under molecular hydrogen atmosphere. A certain asymmetry in acceptor and donor passivation is assumed because the Hall concentration does not vary along the direction of crystal growth. Donors are passivated more than acceptors, which should be confirmed by increasing resistivity and decreasing mobility. Presented at the 6th Joint Seminar “Development of Materials Science in Research and Education”, Karlštejn, Czech Republic, 17–19 September 1996.     

Physical properties of n-CdGeAs2 single crystals prepared by low-temperature crystallization

The first results obtained in studies of the temperature dependences of electrical conductivity and Hall constant of n-CdGeAs₂ single crystals prepared by low-temperature crystallization are reported. It has been established that the method developed permits growing single crystals with a free-electron concentration ⋍(1−2)×10¹⁸ cm⁻³ and a Hall mobility ⋍10000 cm²/(Vs) at T=300 K. It is shown that the temperature dependence of Hall mobility exhibits a behavior characteristic of electron scattering by lattice vibrations, whereas below 150 K a deviation from this law is observed to occur evidencing an increasing contribution of static lattice defects to scattering. The Hall mobility in the crystals prepared was found to reach ⋍36000 cm²/(Vs) at 77 K. Photosensitive heterojunctions based on n-CdGeAs₂ single crystals were prepared. The spectral response of the photosensitivity of these structures is analyzed. It is concluded that this method is promising for preparation of perfect CdGeAs₂ crystals. Fiz. Tverd. Tela (St. Petersburg) 41, 1190–1193 (July 1999)     

Effect of ionizing radiation on the dielectric characteristics of TlInSe<Subscript>2</Subscript> and TlGaTe<Subscript>2</Subscript> single crystals

The temperature dependences of the electrical conductivity and the permittivity of TlInSe₂ and TlGaTe₂ crystals unirradiated and irradiated with 4-MeV electrons at a doze of 10¹⁶ cm⁻² have been investigated. It has been established that electron irradiation leads to a decrease in the electrical conductivity σ and the permittivity ɛ over the entire temperature range under study (90–320 K). It has been revealed that the TlInSe₂ and TlGaTe₂ single crystals undergo a sequence of phase transitions characteristic of crystals of this type, which manifest themselves as anomalies in the temperature dependences σ = f(T) and ɛ = f(T). Electron irradiation at a doze of 10¹⁶ cm⁻² does not affect the phase transition temperatures of the crystals under investigation.     

Concentration of Cr<Superscript>4+</Superscript> impurity ions and color centers as an indicator of saturation of forsterite crystals Mg<Subscript>2</Subscript>SiO<Subscript>4</Subscript> with oxygen

The influence of the oxygen partial pressure P _{O 2} in the growth atmosphere on the coefficient of chromium distribution between the crystal and the melt of forsterite, the Cr³⁺ and Cr⁴⁺ ion contents in crystals, and the concentration of color centers induced by irradiation has been investigated. It has been established that the crystals grown at low oxygen partial pressures P _{O 2} (0.01–0.05 kPa) are characterized by low concentrations of Cr⁴⁺ ions and color centers. A change in the oxygen partial pressure to P _{O 2} ∼ 0.85 kPa leads to an increase in the Cr⁴⁺ center concentration by a factor of ∼10 and in the color center concentration by a factor of ∼5. A further increase in the oxygen partial pressure to P _{O 2} to 12 kPa remains the concentration of these centers almost unchanged. A model has been proposed according to which the intrinsic defects formed under conditions of a relative excess of oxygen leads to both the self-oxidation of chromium and the formation of color centers in the forsterite crystals under irradiation.     

Order parameters and dielectric relaxation in betaine proton glasses

Mixed crystals of betaine, phosphite and betaine phosphate have been investigated using broadband di-electric spectroscopy at frequencies 10⁻¹Hz≤ν≤10⁹Hz and temperatures 1.5 K≤T≤300 K for several betaine phosphate concentrationsx. For 0.2≤x≤0.65 an orientational glass state is found at low temperatures. The broad susceptibility spectra were analyzed using the concepts of distributions of relaxation times and of distributions of energy barriers. A critical comparison of the different approaches is given. In the mixed crystals that show antiferroelectric order at low temperatures, charge transport phenomena are studied. The static permittivity of the proton glass-forming crystals is analyzed, in terms of effectively one- and three-dimensional Ising models that incorporate random fields and random bonds.     

Magnetoplasticity and diffusion in silicon single crystals

The effect of static magnetic fields on the dynamics of surface dislocation segments, as well as the diffusion mobility of a dopant in silicon single crystals, has been analyzed. It has been experimentally found that the preliminary treatment of p-type silicon plates (the dopant is boron with a concentration of 10¹⁶ cm⁻³) in the static magnetic field (B = 1 T, a treatment time of 30 min) leads to an increase in the mobility of surface dislocation segments. The characteristic times of observed changes (about 80 h) and the threshold dopant concentration (10₁₅ cm⁻³) below which the magneto-optical effect in silicon is not fixed have been determined. It has been found that diffusion processes in dislocation-free silicon are magnetically sensitive: the phosphorus diffusion depth in p-type silicon that is preliminarily aged in the static magnetic field increases (by approximately 20%) compared to the reference samples.     

Nonlinear refraction of undoped and Fe-doped KTiOAsO4 crystals in the femtosecond regime

The third-order optical nonlinearities in undoped and Fe-doped KTA crystals have been measured using the Z-scan technique with femtosecond pulses at 780-nm wavelength. The nonlinear refractive index is determined to be 1.7×10⁻¹⁵ cm²/W and 0,9×10⁻¹⁵ cm²/W for undoped and Fe-doped KTA, respectively. No two-photon absorption occurs in these crystals. It is shown that doping with Fe₂O₃ could weaken refractive nonlinearity of KTA, suggesting that Fe:KTA will improve the performance of KTA in high-intensity femtosecond laser applications. In addition, the measured nonlinear index of refraction in KTA crystals is about five times lower than that predicted by the two-band theory. One of the reasons for the discrepancy is given as the applicable limit of the simple theory in which a two-parabolic band model has been assumed in the analysis. Received: 3 June 1999 / Published online: 20 October 1999     

Electron traps in CdS single crystals obtained by admittance spectroscopy on the hetero- and Schottky junctions

The electron trap parameters in semiconducting CdS single crystals were obtained by admittance spectroscopy on its hetero- and Schottky junctions, and the trap depths obtained were 0.065, 0.09, 0.15 0.20, and 0.40 eV. The capture cross-section of the shallowest trap on the Cd-face of the crystals was about 10⁻¹⁹ cm², one order smaller than that of the bulk crystal. The resolving power of the employed method was about 50 meV to distinguish the two traps with different depths. The results of the computer simulation of this method suggested that the trap can be determined when the trap density is at least one order lower than the donor density. The calculated density of the each trap was 1×10¹⁵ cm⁻³ for the shallowest trap and 2×10¹⁶ cm⁻³ for the remaining traps, respectively.     

Vector polarization effect appearing in tensor polarized beams of nuclei under channeling conditions and during measurements of the quadrupole moments of unstable nuclei

General relations describing the spin dynamics of beams of nuclei with initial tensor and vector polarizations have been derived upon planar channeling in bent crystals. The performed analysis indicates that the vector polarization effect predicted by Baryshevsky and Sokolsky can be detected, occurring upon the planar channeling of a beam of nuclei with initial tensor polarization. The planar channeling of a beam of nuclei with initial tensor and vector polarizations can be used to determine the quadrupole moments of unstable nuclei with small lifetimes, up to 10⁻⁷ s. The quadrupole moments of nuclei with lifetimes of about 10⁻⁷ s cannot be measured via known methods, including optical methods.     

Structure and control of Coulomb crystals in a Penning trap

We apply rotating electric fields to ion plasmas in a Penning trap to obtain phase-locked rotation about the magnetic field axis. These plasmas, containing up to 10^{6 9}Be⁺ ions, are laser-cooled to millikelvin temperatures so that they freeze into solids. Single body-centered cubic (bcc) crystals have been observed by Bragg scattering in nearly spherical plasmas with ≳ 2 × 10⁵ ions. The detection of the Bragg patterns is synchronized with the plasma rotation, so individual peaks are observed. With phase-locked rotation, the crystal lattice and its orientation can be stable for longer than 30 min or ∼10⁸ rotations. This revised version was published online in July 2006 with corrections to the Cover Date.     

Long-lived excited states and photoluminescence excitation spectra in single crystals of fullerene C60

Photoluminescence, optical absorption spectra, and photoluminescence excitation spectra were measured on large (2–3 mm), very pure crystals of fullerene C₆₀ at 5 K. It is shown that the main contribution to the photoluminescence of these crystals is from singlet and triplet excitons captured on crystal defects. The concentration of these defects does not exceed 10¹⁸ cm⁻²³, and the lifetime of triplet excitons on these defects is about 3 ms. It is shown that the symmetry distortion of the C₆₀ molecules at the defects is rather large and causes the oscillator strength of the zero-phonon optical transitions to be comparable to the most intense optical transitions with the participation of intramolecular vibrations. Zh. éksp. Teor. Fiz. 113, 734–746 (February 1998)     

Triboluminescence,a new tool to investigate fracture-initiation time of crystals under stress

The present paper reports that triboluminescence (TBL) does not appear at the instant of impact of the load but a certain time lag is required for its appearance which depends on the value of the stress applied to the crystal. Since TBL appears in sugar crystals during the creation of new surfaces, the fracture-initiation time of the crystal has been taken to be the delay time in observing TBL pulse after the application of stress. The dependence of fracture-initiation time,t _f ^σ , of crystals on the stress, σ, may be expressed ast _f ^σ =t _o exp (− ασ), wheret _o and α are constants. The values of the lattice energy, and the change in lattice energy per unit stress, of sugar crystals have been calculated from TBL measurements and they have been found to be 21·2 kcal mole⁻¹ and 0·41 × 10⁻⁸ kcal mole⁻¹ dyne⁻¹ cm² respectively.     

Study of the third order nonlinear optical properties of Zn<Subscript>1−x</Subscript>Mg<Subscript>x</Subscript>Se and Cd<Subscript>1−x</Subscript>Mg<Subscript>x</Subscript>Se crystals

Third order nonlinear optical susceptibilities χ^<3> of ternary Zn_1−xMg_xSe and Cd_1−xMg_xSe crystals have been measured using standard degenerate four-wave mixing (DFWM) method at 532 nm. The nonlinear transmission technique has been applied to check if our crystals exhibit two-photon absorption. The studied Zn_1−xMg_xSe and Cd_1−xMg_xSe solid solutions were grown from the melt by the modified high-pressure Bridgman method. For both crystals the energy gap increases with increasing Mg content. In the case of Zn_1−xMg_xSe, it was found that the value of third order nonlinear optical susceptibility χ^<3> decreases with increasing Mg content. An explanation of this behaviour results from the dependence of optical nonlinearities on the energy band gap E_g of the studied crystals. In the case of Cd_1txMg_xSe with low content of Mg, no response was observed for the studied wavelength since the energy gap in such crystals is smaller than the photon energy of the used laser radiation. It was also found that the value of third order nonlinear optical susceptibility χ^<3> for Cd_0.70Mg_0.30Se is higher than for Zn_0.67Mg_0.33Se. This behaviour can be understood if one take into consideration that the free carrier concentration in Cd_1−xMg_xSe samples is about four orders of magnitude higher than that in Zn_1txMg_xSe ones with comparable Mg content respectively. It is commonly known that when the electric conductivity increases, the values of nonlinear optical properties increase. From the performed measurements one can conclude that the incorporation of Mg as constituent into ZnSe and CdSe crystals leads to a change of the third order nonlinear optical susceptibilities.     

Build-up of F and M color centers in KCl single crystals under combined electron and proton irradiation

The F and M color-center build-up kinetics in KCl crystals under combined irradiation with electrons of energy 15 and 100 keV and 100-keV protons have been studied in the flux range of 10¹³–10¹⁵ cm⁻² and at a flux density of 3×10¹¹ cm⁻² s⁻¹. It is shown that consecutive irradiation with electrons and protons produces results not obtainable under electron or proton irradiation alone. Fiz. Tverd. Tela (St. Petersburg) 40, 2015–2018 (November 1998)     

Studies on Interaction of Norfloxacin,Cu<Superscript>2+</Superscript>, and DNA by Spectral Methods

The interactions of norfloxacin (NFA), DNA, and Cu²⁺ are studied by fluorescence and UV-spectra method. According to the experimental results, it can be concluded that NFA can form a steady binary complex with Cu²⁺. There is a linear relationship between the Fluorescence intensity of the norfloxacin–Cu²⁺–DNA system and the concentration of DNA. And when the concentration of the NFA is 1.95×10⁻⁵ mol L⁻¹, they possess a good linearity in the concentration of DNA ranged from 4.7×10⁻⁶ to 2.8×10⁻⁵ mol L⁻¹.It is a good method due to the high sensitivity and selectivity.     

Vortex structure in FeTeSe single crystals

Vortex structure in FeTe_0.66Se_0.44 and FeTe_0.6Se_0.4 single crystals with T _c ∼ 11.7 and 14.5 K, respectively, has been studied using the decoration technique. It has been found that in single crystals with the simplest crystalline structure of 11-family iron-containing superconductors (without interlayers), no regular vortex lattice is observed, similar to the case of the previously studied 122 and 1111 families. Using transmission electron microscopy, the dislocation structure with a density of ∼10⁹ cm⁻² has been observed. The problem of pinning in iron-containing superconductor single crystals is discussed.     

Optical rectification in tellurium from 10.6 μm

Optical rectification in single crystals of tellurium produced by infra-red radiation at 10.6 μm has been observed. The value of |χ⁰ ₁₁₁| is found to be 0.9×10⁻⁶ esu. Preliminary experiments to test the usefulness of the effect to monitor mode-locked infra-red laser pulses have been inconclusive.     

Gelatin-based protonic electrolyte for electrochromic windows

Proton-conducting gel polymer electrolytes based on gelatin plasticized with glycerol and containing acetic acid were investigated, characterized, and applied to electrochromic window. For glycerol contents varying from 7% to 48%, the conductivity of the uniform and predominantly amorphous gel electrolyte was found to follow a Vogel–Tamman–Fulcher behavior with the temperature. Typically, for the electrolyte chosen to make 7 × 2 cm² electrochromic smart window with the configuration: glass/fluor-doped tin oxide (FTO)/WO₃/gelatin electrolyte/CeO₂–TiO₂/FTO/glass and containing 28% of glycerol, the conductivities were found to be of the order of 5 × 10⁻⁵ S/cm at room temperature and 3.6 × 10⁻⁴ S/cm at 80 °C. The device was characterized by spectroelectrochemical techniques and was tested up to 10,000 cycles showing a fast coloring/bleaching behavior, where the coloring process was achieved in 10 s and the bleaching in 2 s. The transmission variation at the wavelength of 550 nm was about 15%. The cyclic voltammograms showed a very good reversibility of the cathodic/anodic processes, and the charge density was about 3.5 mC/cm². The memory tests showed that the transmittance in the colored state increased by 8% in 90 min after removing the potential.     

Spectral and kinetic characteristics of CdI<Subscript>2</Subscript> and CdI<Subscript>2</Subscript>:Pb scintillators

We have studied the effect of lead dopant on the optical absorption, photoluminescence, and x-ray luminescence spectra, and the scintillation characteristics of CdI₂ at room temperature. The crystals for the study were grown by the Stockbarger-Bridgman method. Activation of CdI₂ from the melt by the compound PbI₂ leads to the appearance in the absorption spectra in the near-edge region of an activator band at 395–405 nm, which is interpreted as an A band connected with electronic transitions from the ¹S₀ state to the ³P₁ levels in the Pb²⁺ ion. For x-ray excitation, CdI₂:Pb²⁺ crystals with optimal dopant concentration (∼1.0 mol%) are characterized by a light yield with maximum in the 570–580 nm region that is an order of magnitude higher than for CdI₂ crystals in the 490–500 nm band. For α excitation, the radioluminescence kinetics for cadmium iodide is characterized by a very short (∼0.3 nsec) rise time and fast decay of luminescence, with τ₁ ≈ 4 nsec and τ₂ = 10–76 nsec. Depending on the conditions under which the crystals were obtained, the fast component fraction is 95%–99%. The crystal is characterized by a similar scintillation pulse in the case of excitation by x-ray pulses. The radioluminescence pulse shape for CdI₂:Pb in the decay stage is predominantly exponential, with luminescence decay time constants τ₁ ≈ 10 nsec and τ₂ = 200–250 nsec. This system is characterized by low afterglow, at the level for the Bi₄G₃O₁₂ scintillator. We have demonstrated the feasibility of using CdI₂:Pb as a scintillator for detecting α particles. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 6, pp. 825–830, November–December, 2008.