Manifestation of LO-LA phonons in Raman scattering in graphene

We analyze the spectral density of Raman scattering in graphene accompanied by the emission of a pair of LO or LA phonons from the corner of the Brillouin zone. Using a minimal tight-binding model approach, we find that the lineshape of the corresponding Raman signal consists of two peaks with a strongly non-Lorentzian (almost triangular) form with their width and the splitting between the peaks being strongly dependent on the energy of the incoming photon. The asymmetric lineshape is determined by the kinematics of the fully-resonant two-phonon process, and it reflects a strong anisotropy of LO-LA phonons’ dispersion around the Brillouin zone corners.     

Raman spectra from oblique phonons in powdered samples

We examined both experimentally and theoretically the Raman spectra from powder and polycrystalline samples of a crystal where mixing of pure modes is allowed. The theoretical and experimental spectra of LiIO₃ powder match perfectly, though little coincidence with the single crystal spectrum is obtained.     

Manifestation of glass-crack fractal geometry in Raman spectra

A Raman spectroscopic investigation of the fractal structure on the surface of cracks of different size scales in glassy SiO₂ is reported. A study was made of the crack surface and of the distorted layer formed after grinding and polishing and comminution. The parameters of the fractal structure thus found reflect the properties of the material and the crack nature; namely, fractal dimension is of greater importance for more compact materials, and the geometric size of fractal units (i.e., the size in real space) correlates with crack dimensions. Fiz. Tverd. Tela (St. Petersburg) 41, 1030–1034 (June 1999)     

Raman scattering by optical phonons and polaritons in CuCl

We present data on forward and backward scattering in CuCl at liquid N₂ temperature. Peaks at 146 and 172 cm^-1 which appear in both forward and backward scattering spectra are attributed to other than first order scattering by optical phonons. The data on polarition scattering indicate that the atomic displacement contribution to the scattering by TO phonons is rather small. From the experimentally determined polarition dispersion curve we obtain a value of 174 ±2.5 cm^-1 for ω_T and a value of 5.3 for ?_S.     

Absolute efficiency and dispersion of Raman scattering by phonons in silicon

We have measured the absolute Raman efficiency for first order scattering of the optical zone center phonon with two different incident photon energies (1.16 and 0.94 eV) by comparison with the Raman scattering from diamond. A value significantly lower than the experimental data published previously in this region has been found. For the first order scattering no dispersion of the scattering efficiency has been observed at the indirect gap, in contrast to the second order scattering which shows a pronounced resonance behaviour in this energy range.     

Isotope-disorder-induced line broadening of phonons in the Raman spectra of SiC

The width of phonon lines in the Raman spectra of ideal isotopically pure solids is determined by inelastic scattering processes. In solids that contain a mixture of different isotopes of one atomic constituent, elastic scattering due to isotopic mass disorder opens up decay channels that result in additional line broadening. We use different polytypes of SiC with an associated number of Raman active modes in order to experimentally validate the proportionality between linewidth and phonon density of states predicted by a simple elastic scattering theory.     

Resonant Raman scattering of optical phonons in self-assembled quantum dots

We have investigated the carrier relaxation mechanism in InGaAs/GaAs quantum dots by photoluminescence excitation (PLE) spectroscopy. Near-field scanning optical microscope successfully shows that a PLE resonance at a relaxation energy of 36 meV can be seen in all single-dot luminescence spectra, and thus can be attributed to resonant Raman scattering by a GaAs LO phonon to the excitonic ground state. In addition, a number of sharp resonances observed in single-dot PLE spectra can be identified as resonant Raman features due to localized phonons, which are observed in the conventional Raman spectrum. The results reveal the mechanism for the efficient relaxation of carriers observed in self-assembled quantum dots: the carriers can relax within the continuum states, and make transitions to the excitonic ground state by phonon emission.     

Resonant Raman scattering from screened longitudinal optical phonons in EuTe

Forbidden resonant Raman scattering from screened longitudinal optical, LO, phonons has been observed in the back-reflection geometry from n-type EuTe at 2°K. The Raman shift increased with increasing excitation frequency but was always between the LO and TO phonon frequencies. This effect is explained in terms of a varying ‘effective’ carrier concentration as a function of laser penetration depth through the surface depletion layer in the situation of large phonon wave vector. Conduction band and lattice parameters have been calculated from infrared Reststrahlen and plasma edge measurements.     

Anisotropy of optical phonons in semiconductor superlattices: Raman scattering experiments

Experiments on Raman scattering in the “forward” geometry, permitting observation of anisotropy of the optical phonons, are performed on specially prepared short-period GaAs/AlAs superlattice structures with the substrates removed and the surfaces covered with an antireflective layer. The experimental data agree well with the computational results obtained for the angular dispersion of optical phonons in superlattices on the basis of a modified continuum model. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 50–55 (10 July 1998)     

Raman scattering from confined LO phonons and dispersion relation in GaAs/AlAs superlattices

The Raman scattering from both GaAs and AlAs confined LO phonons for several GaAs/AlAs superlattices is presented. The GaAs confined LO phonons were observed for two narrow GaAs layer samples at room temperature. The frequencies of observed phonons fit fairly well with the theoretical dispersion curves.     

The absorption spectra of optical bistability with dispersion

The absorption spectra of a weak field (Ω) probing the bistable behaviour of a homogeneously broadened medium (ω₀) detuned with respect to the exciting laser light (ω_L) has been investigated. A dispersion like structure superimposed on an inverted peak near the critical threshold is predicted. The frequency response of the differential gain amplifier is also obtained.     

Raman scattering of light by optical phonons in Si-Ge-Si structures with quantum dots

Raman scattering of light by optical phonons in Si-Ge-Si structures with pseudomorphic germanium quantum dots has been investigated. Resonance amplification of the scattering intensity on E ₀ (Γ₇−Γ₈) transitions has been observed. It is shown that as a result of the formation of the layer of germanium quantum dots, the resonance energy is ∼0.3 eV higher than in the two-dimensional case. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 3, 203–207 (10 August 1996)     

Phonon dispersion and Raman spectra of wurtzite InAs under pressure

The authors have systematically studied the vibrational properties of wurtzite InAs at high pressure within the Density Functional Theory scheme. It is found that pressure significantly affects the phonon dispersion curves and Raman spectra. We observed an indication of phase transition for WZ-InAs at about 10 GPa. The elastic constants calculation show mechanical stability for WZ-InAs. The calculated values of structural parameters are in good agreement with available data. There is a quadratic increase in optical modes with pressure while the LO–TO splitting and effective charge decrease linearly with pressure.     

PbB_4O_7晶体的太赫兹光谱和软光学声子

对实验测量的PbB4O7晶体样品的太赫兹(1012Hz)光谱、拉曼光谱以及红外—可见—紫外光谱进行了分析.在0.25—2.5THz波段介电函数随频率变化曲线ε(ν)出现共振型尖峰.四方面的分析表明PbB4O7晶体中存在软光学声子:1)介电函数随频率的变化曲线ε(ν)满足LST(Lyddane-Sachs-Teller)关系;2)在共振峰的频率附近(3.10THz)有很强的拉曼散射峰;3)吸收系数随频率的变化曲线α(ν)满足极化激元的特征;4)透过晶体的光子的色散关系ν(k)发生断开的畸变.PbB4O7晶体中存在软光学声子的意义在于,在满足产生极化激元的条件下,透过晶体的光子的频率会发生劈裂,分为升高和降低的两支,有可能利用这种原理来改变光子的频率.     

A Raman scattering study of long-wavelength optical phonons in hexagonal ammonium fluoride single crystals

All the predicted Raman active translatory vibrations of wurtzite ammonium fluoride (space group C⁴_6v are observed and assigned on the basis of their polarization selections obtained with single crystals. The fundamental ammonium ion librations could not be detected, but a frequency of about 545 cm^?1 is deduced from the analysis of the observed second order Raman spectrum.The TO-LO splitting for the A₁ and E₁ polar phonons is a lot more important than the A₁ — E₁ splitting (125 cm^?1 compared to 1–3 cm^?1); thus, the effect of long-range electric forces strongly dominates over that of the anisotropy of the shortrange interatomic forces. Only very weak directional dispersion could be detected on the quasi-mode spectra. From the observed TO and LO frequencies, one evaluates ?₀ ? 3.95 in good agreement with dielectric experimental data.     

Analysis of dispersion of long-wavelength optical phonons in zinc with the help of light scattering

The temperature dependences (5–300 K) of the Raman spectra of E _2g phonons and optical constants in zinc single crystals are measured in the excitation energy range 1.4–2.54 eV. It is found that phonon damping decreases upon an increase in the wavelength of exciting radiation. The obtained results are compared with the dependence of the phonon width on the excitation energy (the probed wave vector of the excitations under investigation), which are presented for the first time for the transition metal osmium, as well as with the calculated electron-phonon renormalization of damping, taking into account the actual distribution of wave vectors.     

Estimation of dispersion curve of transverse acoustic phonons in CdI2 by Raman scattering

Shear type rigid layer modes in various polytypes of CdI₂ have been measured by Raman scattering. The dispersion curve of transverse acoustic phonons in the [0 0 ξ] direction is estimated from the observed frequencies of the rigid layer modes. The analysis of the estimated dispersion curve indicates that interlayer forces in CdI₂ are mainly short range ones.