Diode-pumped Actively Q-switched Nd:GdVO<Subscript>4</Subscript> Green Laser with Periodically Poled KTP

A diode-pumped actively Q-switched Nd:GdVO₄ green laser with periodically poled KTP (PPKTP) and Acoustic-optic (AO) modulator has been realized. The dependences of pulse energy, pulse width, and peak power on incident pump power are measured. At the pump power of 4.1 W and repetition rate of 10 kHZ, we can obtain a 19.2 ns pulse with pulse energy of 0.11 mJ and peak power of 5.8 kW, which are almost three times of that in the conventional KTP green laser, respectively. A rate equation model is introduced to theoretically analyze the results obtained in the experiment, in which the Gaussian spatial distribution of the intracavity photon density is taken into account. The numerical solutions of the rate equations agree with the experimental results.     

Diode-pumped simultaneously Q-switched and mode-locked Nd:GdVO<Subscript>4</Subscript>/LBO red Laser

A diode-end-pumped simultaneously Q-switched and mode-locked intracavity frequency doubled Nd:GdVO₄/LBO red laser with an acousto-optic Q-switch was realized. The maximum red laser output power of 250 mW was obtained at the incident pump power of 8.3 W and the repetition rate of 10 kHz. At 5 kHz, the maximum mode-locking modulation depth of about 80% was achieved with the Q-switched pulse width of 440 ns. The red mode-locked pulse inside the Q-switched pulse had a repetition rate of 115 MHz, its average pulse width was estimated to be about 350 ps.     

Diode single-end-pumped AO Q-switched Nd:GdVO<Subscript>4</Subscript> 266 nm laser

By simple extra-cavity frequency conversion, the performance of a diode single-end-pumped AO Q-switched Nd:GdVO₄/KTP/BBO 266 nm laser was demonstrated. Under the incident pump power of 14.32 W, the maximum average output power at 266 nm was 374 mW at the repetition of 20 kHz; the opticaloptical conversion efficiency was 2.6%. The corresponding pulse width was 5 ns, with the single-pulse energy and peak power calculated to be 18.7 μJ and 3.74 kW, respectively. The dependence of the operational parameters on the pump power was also investigated experimentally.     

AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO<Subscript>4</Subscript> laser

An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.     

Diode-pumped Q-switched intracavity frequency-doubled Nd:LuVO<Subscript>4</Subscript>/KTP green laser

A simple and compact diode-pumped acousto-optically Q-switched intracavity frequency-doubled Nd:LuVO₄/KTP green laser were demonstrated successfully for the first time. At an incident pump power of 6.5 W, an average output power of 663 mW, a pulse width of 26 ns were obtained with a PRF of 10 kHz. The pulse energy and peak power of the green light were determined to be 66.3 μJ and 2.55 kW, respectively.     

Diode-pumped passively mode-locked Nd:GdVO<Subscript>4</Subscript> laser with a GaAs saturable absorber mirror

We report on a diode end-pumped passively mode-locked Nd:GdVO₄ laser. By using a GaAs wafer simultaneously as the saturable absorber and the output coupler, stable continuous-wave mode locking was achieved. The pulse width was measured to be 18.9 picoseconds at a repetition rate of 370 MHz. The most remarkable property of the laser is that its repetition rate can be changed from 370 MHz to 3.348 GHz by simply changing the cavity length. An average output power of 3.46 W at a 3.348 GHz repetition rate was obtained with a 14 W pump power. To our knowledge, this is the first demonstration of a passively mode-locked Nd:GdVO₄ laser using a GaAs wafer as the saturable absorber. PACS 42.55.Rz; 42.60.Fc; 42.55.Xi.     

Diode-pumped short pulse passively Q-switched 912 nm Nd:GdVO<Subscript>4</Subscript>/Cr:YAG laser at high repetition rate operation

A diode-end-pumped passively Q-switched 912 nm Nd:GdVO₄/Cr:YAG laser is demonstrated for the first time. In a concave-piano cavity, pulsed 912 nm laser performance is investigated using two kinds of Cr:YAG crystal with different unsaturated transmission (T _U) of 95% and 90% at 912 nm as the saturable absorbers. When the T _U = 90% Cr:YAG is used, as much as 2.6 W average output power for short pulsed 912 nm laser is achieved at an absorbed pump power of 34.0 W, corresponding to an optical efficiency of 7.6% and a slope efficiency of 20.3%. Moreover, 10.5 ns duration pulses and up to 2.3 kW peak power is obtained at the repetition rate around 81.6 kHz.     

Compact efficient self-frequency Raman conversion in diode-pumped passively Q-switched Nd:GdVO<Subscript>4</Subscript> laser

I report the first demonstration of the generation of efficient sub-nanosecond self-stimulated Raman pulses by a diode-pumped passively Q-switched Nd:GdVO₄/Cr⁴⁺:YAG laser. The conversion efficiency for the average power is 7% from pump diode input to self-Raman output and the slope efficiency is up to 14%. At an incident pump power of 2.0 W, the pulse duration, pulse energy, and peak power for the Stokes wavelength of 1175.6 nm were found to be 750 ps, 6.3 J, and 8.4 kW, respectively, with a pulse-repetition rate of 22 kHz. PACS 42.55.Ye; 42.55.Xi; 42.60.Gd     

Diode-pumped high-repetition-rate acousto-optically Q-switched Nd:YVO<Subscript>4</Subscript> laser operating at 914 nm

A diode-pumped high-repetition-rate acousto-optically (A-O) Q-switched Nd:YVO₄ laser operating at 914 nm was reported in this paper. Employing a compact linear laser cavity, at an operating repetition rate of 10 kHz, a maximum average output power of 2.2 W 914 nm laser was obtained at an incident pump power of 45.3 W, corresponding to an optical conversion efficiency of 4.9% and a slope efficiency of 8.8%. Minimum pulse width of 24 ns and maximum peak power of 8.0 kW of 914 nm laser was also achieved at an incident pump power of 40.8 W. To the best of our knowledge, this is the highest peak power of 914 nm laser at 10 kHz by far. Moreover, the highest operating repetition rate of pulsed 914 nm can even reach 100 kHz.     

Diode-pumped high-efficiency passively Q-switched Yb:CaYAlO<Subscript>4</Subscript> laser

We experimentally demonstrated a high-efficiency passively Q-switched Yb:CaYAlO₄ (Yb:CYA) laser based on a semiconductor-saturable absorber mirror (SESAM), and the output characteristics of the laser including the average output power, repetition frequency, pulse duration, pulse energy and pulse peak power were investigated by adopting output mirrors with different transmittances. When the transmittance of the output mirror was 5% and the pump power was set at about 7.76 W, a maximum average output power of as high as 2.480 W was achieved with a slope efficiency and light-to-light efficiency of the Q-switched Yb:CYA laser of up to 37.1% and 31.2%, respectively.     

Improved performance of acoustooptically Q-switched Nd:GdVO<Subscript>4</Subscript> laser by using the planoconvex cavity

A planoconvex cavity is used to compensate the thermal lens effectively for a Q-switched Nd:GdVO₄ laser. The good beam quality of the continuous-wave (CW) output laser was obtained and the performances of the Q-switched laser were improved remarkably. The pulse width reduced and the output ratio of the Q-switching to free running increased resulting from the good beam quality of the planoconvex cavity compared with those used on a flat-flat cavity.     

Comparison of electro-optical and acousto-optical Q-switched,high repetition rate Nd:GdVO<Subscript>4</Subscript> laser

The differences between the performances of electro-optical (EO) and acousto-optical (AO) Q-switched, diode pumped Nd:GdVO₄ laser at high repetition rates were detailed in this paper. The results revealed that EO Q-switch was more favorable to obtain short pulse width and high peak power laser than AO Q-switch under high repetition rate operation. The minimum pulse widths at 100 kHz were 20.2 ns under EO operation and 28.7 ns under AO operation, corresponding to peak powers of 3.1 kW and 2.2 kW, respectively. The corresponding values at 10 kHz were 5.3 ns, 9.0 ns and 77.4 kW, 45.6 kW, respectively.     

Diode-pumped passively Q-switched Nd:YVO<Subscript>4</Subscript> laser with a carbon nanotube saturable absorber

A diode end-pumped passively Q-switched Nd:YVO₄ laser with a transmission-type single-walled carbon nanotube saturable absorber is first demonstrated in this paper. The maximum continuous wave (CW) output power of 477 mW is obtained at the incident pump power of 1490 mW with the output transmission T = 10%, resulting in slope efficiency of 41.3%. For Q-switching operation, the measured pulse duration of 332 ns, the pulse energy of 326 nJ and the peak power of 982 mW are respectively obtained.     

Symmetric and short green-pulse generation by doubly Q-switched Nd:YVO<Subscript>4</Subscript> laser

A compact diode-pumped doubly Q-switched extracavity frequency-doubled Nd:YVO₄/KTP green-pulse laser was demonstrated, using both an acoustic-optic (AO) modulator and a GaAs saturable absorber in a simple flat-flat cavity. The green laser can generate a more symmetric and shorter pulse when compared with purely AO and passively Q-switched lasers. A peak power of 7.54 kW with the corresponding pulse width of 3.2 ns has been achieved with the incident pump power of 7.76 W and f _p = 15 kHz. A reasonable analysis about the experimental results has been given.     

Efficient sub-nanosecond intracavity optical parametric oscillator pumped with a passively Q-switched Nd:GdVO<Subscript>4</Subscript> laser

An efficient diode-pumped passively Q-switched Nd:GdVO₄/Cr⁴⁺:YAG laser was employed to generate a high-repetition-rate, high-peak-power eye-safe laser beam with an intracavity optical parametric oscillator (OPO) based on a KTP crystal. The conversion efficiency for the average power is 8.3% from pump diode input to OPO signal output and the slope efficiency is up to 10%. At an incident pump power of 14.5 W, the compact intracavity OPO cavity, operating at 46 kHz, produces average powers at 1571 nm up to 1.2 W with a pulse width as short as 700 ps. PACS 42.60.Gd; 42.65.Yj; 42.55.X     

Diode-pumped Tm:GdVO<Subscript>4</Subscript> lasers with double etalons

Diode end-pumped single-frequency Tm:GdVO₄ laser at room temperature was reported. The maximal output power of single-frequency is as high as 51 mW by using two uncoated fused YAG etalons, which are respectively 0.05 mm thick and 1 mm thick. We obtained the single frequency Tm:GdVO₄ laser at 1919.7 nm. The slope efficiency is 1.4%. The single-longitudinal-mode (SLM) laser can be used as a seed laser for coherent wind measurements and differential absorption LIDAR systems.     

Diode-pumped Nd:YVO<Subscript>4</Subscript> laser passively Q-switched with graphene oxide spin coated on ITO substrate

Two graphene oxide saturable absorbers (GO-SAs) spin coated on indium tin oxide (ITO) substrate have been prepared and their transmissivity spectra have also been measured. The performance of the diode-pumped passively Q-switched Nd:YVO₄ laser with GO-SA has been investigated for the first time. The shortest pulse width of 113 ns and the highest peak power of 4.3 W are obtained at the pump power of 5.04 W. The output laser characteristics have demonstrated that graphene oxide is a promising saturable absorber for passive Q-switching.     

Cavity-dumped mode-locked Nd:GdVO<Subscript>4</Subscript> laser at low repetition rate

We report a cavity-dumped mode-locked Nd:GdVO₄ laser with semiconductor saturable absorber mirrors at low repetition rate. In this laser system, a single mode-locked laser pulse is generated, amplified and cavity-dumped by means of electro-optic modulator at 1 to 10 Hz repetition rate. The energy of the pulse is about 150 nJ and the pulse duration is determined to be 10 ps.     

Passively Q-switched GdVO<Subscript>4</Subscript>/Nd:GdVO<Subscript>4</Subscript> laser with Cr<Superscript>4+</Superscript>:YAG saturable absorber under direct 879 nm diode pumping to the emitting level

A passively Q-switched 1.06 μm laser with Cr⁴⁺:YAG saturable absorber by direct 879 nm diode pumping grown-together composite GdVO₄/Nd:GdVO₄ crystal to the emitting level was demonstrated in this paper. The characteristics of pulsed laser were investigated by using two kinds of Cr⁴⁺:YAG crystal with the initial transmissivity of 80 and 90%, respectively. When the T ₀ = 90% Cr⁴⁺:YAG was used, an average output power of 1.59 W was achieved at an incident pump power of 10 W. The pulse width and repetition rate were 64.5 ns and 170 kHz, respectively. The thermal lens effect of laser crystal was analyzed.     

Diode-pumped Nd:YVO<Subscript>4</Subscript>/Nd:YLF laser at 488 nm

We present a laser architecture to obtain continuous-wave blue radiation at 488 nm. A 808 nm diode-pumped the Nd:YVO₄ crystal emitting at 914 nm. A part of the pump power was then absorbed by the Nd:YVO₄ crystal. The remaining was used to pump the Nd:YLiF₄ (Nd:YLF) crystal emitting at 1047 nm. Intracavity sum-frequency mixing at 914 and 1047 nm was then realized in a BiB₃O₆ (BiBO) crystal to reach the blue radiation. We obtained a continuous-wave output power of 339 mW at 488 nm with a pump laser diode emitting 18.3 W at 808 nm.