利用高能离子模拟研究反应堆结构材料中的辐照效应

简要介绍了载能粒子辐射损伤对反应堆结构材料性能的影响,阐述了载能粒子束特别是高能离子束开展模拟研究的优势,并举例说明了国内利用高能重离子模拟研究反应堆结构材料辐射效应取得的进展。实验结果和理论分析表明,载能离子特别是高能离子辐照非常适合用于模拟研究反应堆结构材料中由粒子辐射引起的材料微观结构和宏观性能变化,是模拟研究反应堆结构材料辐射效应的非常有效的手段。 Radiation damage in structural materials of fission/fusion reactors is mainly attributed to the evolution of intensive atom displacement damage induced by energetic particles （ n, α and/or fission fragments） and highrate helium doping by direct α particle bombardments and/or （n, α） reactions. It can cause severe degradation of reactor structural materials such as surface blistering, bulk void swelling, deformation, fatigue, embrittlement, stress erosion corrosion and so on that will significantly affect the operation safety of reactors. However, up to now, behavior of structural materials at the end of their service can hardly be fully tested in a real reactor. In the present paper, damage process in reactor structural materials is briefly introduced, then the advantages of energetic ion implantation/irradiation especially high-energy heavy ion irradiation are discussed, and several typical examples on simulation of radiation effects in reactor candidate structural materials using high-energy heavy ion irradiations are introduced. Experimental results and theoretical analysis suggested that irradiation with energetic particles especially high-energy heavy ions is a very useful technique for simulating the evolution of microstructures and macro-properties of reactor structural materials.     

4H-SiC NMOS电子、质子辐照数值模拟

 分析了高能电子、质子对4H-SiC的损伤机理,建立了4H-SiC NMOS器件物理模型。电子、质子辐照效应模型。应用ISE-TCAD软件进行数值模拟计算,得出在能量为2.5 MeV、注量为5×10¹³ cm^-2的电子辐照及能量为6.5 MeV、注量为2×10¹⁴ cm^-2的质子辐照下,4H-SiC NMOS转移特性曲线和亚阈值漏电流曲线变化的初步规律。数值模拟结果与相同条件下Si NMOS实验结果吻合较好。     

Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

The degradations in NPN silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current （IB）, current gain （β）, neutral base recombination （NBR）, and Early voltage （VA） were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail.     

质子与中子辐照对电荷耦合器件暗信号参数的影响及其效应分析

对科学级电荷耦合器件(charge-coupled device, CCD)进行了质子和中子辐照试验及退火试验, 应用蒙特卡洛方法计算了质子和中子在CCD中的能量沉积, 分析了器件的辐射损伤机理. 仿真计算了N⁺埋层内沉积的位移损伤剂量, 辐照与退火试验过程中主要考察暗信号的变化规律. 研究结果显示, 质子与中子辐照均会引发暗信号退化, 其退化的规律与位移损伤剂量变化一致; 退火后, 质子辐照所致CCD暗信号大幅度恢复, 其体暗信号增加量占总暗信号增加量的比例最多为22%; 中子辐照引发的暗信号增长主要为体暗信号. 质子和中子在N⁺埋层产生相同位移损伤剂量的情况下, 两者导致的体暗信号增长量相同, 质子与中子辐照产生的体缺陷对体暗信号增长的贡献是同质的.     

Radiation damage in Si photodiodes by high-temperature irradiation

Results are presented of a detailed study of the effects of high-temperature 4-MeV neutron irradiation on the performance degradation of Si pin photodiodes together with the radiation-induced defects, observed by deep level transient spectroscopy. The degradation of the device performance and the introduction rate of the lattice defects decrease with increasing sample temperature during irradiation. For a 250°C irradiation, the reduction of the reverse current is only 20% of the starting value. This result suggests that the creation and recovery of the radiation damage proceeds simultaneously at high temperatures. Carbon-related complex as hole capture levels is also mainly responsible for the device degradation for high-temperature neutron irradiation.     

电荷耦合器件在质子辐照下的粒子输运仿真与效应分析

应用蒙特卡洛方法计算了质子在科学级电荷耦合器件(charge-coupled device, CCD) 结构中的能量沉积, 并结合该CCD的质子辐照试验及退火试验数据, 分析了器件的辐射损伤机理. 仿真计算体硅内沉积的位移损伤剂量和栅氧化层的电离损伤剂量, 辐照与退火试验过程中主要考察暗信号、电荷转移效率两个参数的变化规律. 研究结果显示, 暗信号和电荷转移效率的变化规律与位移、电离损伤剂量一致; 退火后暗信号大幅度降低, 辐照导致的表面暗信号增加占总暗信号增加的比例至少为80%; 退火后电荷转移效率恢复较小, 电荷转移效率降低的原因主要为体缺陷. 通过总结试验规律, 推导出了电荷转移效率退化程度的预估公式及其损伤因子k_damage.     

利用HIRFL高能重离子束的核能材料辐照损伤研究

载能重离子与高能中子在材料中能够产生相似的级联碰撞损伤,加之重离子具有大的离位损伤截面和在材料样品中低的感生放射性,载能重离子束成为模拟先进核能装置内部结构材料辐照损伤的重要手段。HIRFL能区的重离子在结构材料中的射程一般远大于晶粒尺寸,因此能够产生材料体损伤,借助小样品技术可以获得材料力学性能变化（尤其辐照脆化）的有用信息,为探讨材料辐照损伤微结构和宏观力学性能变化的关联提供了重要条件。本文简要介绍了近年来我们基于HIRFL高能离子束开展的聚变堆候选材料辐照损伤的研究,包括低活化钢的辐照脆化行为、氧化物弥散强化（ODS）铁素体钢的结构优化对于抗辐照性能的影响、不同载能粒子辐照条件下铁素体/马氏体钢的辐照肿胀数据的关联,以及高能重离子辐照的钨材料中氢同位素的滞留行为。研究表明,结合特殊的测试技术及数据分析方法,高能重离子可作为核能结构材料辐照损伤研究及评估的有效手段。Because of the similarity in cascade damage structure in materials produced by energetic heavy ions and by fast neutrons, and the high displacement rate and low induced radioactivity of samples by heavy ions, heavy ion beam becomes an important tool to simulate radiation damage by energetic neutrons in materials in advanced nuclear energy systems. The ranges of heavy ions provided by HIRFL (Heavy Ion Research Facility in Lanzhou) are generally much larger than the mean dimensions of grains in alloys candidate to advanced nuclear reactors, and is capable of producing radiation damage in bulk scale. It therefore makes possible the evaluation of change of mechanical properties including the radiation induced embrittlement from the irradiated specimens by using miniaturized specimen techniques. In the present paper, we provide an introduction of our recent studies of radiation damage of materials candidate to future fusion reactors by utilizing heavy ion beams in HIRFL.The studies include issues as follows:ductility loss of RAFM steels causes by high-energy Ne ions, impact of oxide dispersoids on the radiation resistance of ODS ferritic steels, correlation of void swelling of ferritic/martensitic steels under different particle irradiation, and behavior of deuterium retention in tungsten under irradiation with high-energy heavy ions. The results show that high-energy heavy ions can be used as a tool to efficiently investigate or evaluate radiation damage in structure materials if combined with some special test techniques and data analysis.     

Simulation of Ion Paths in the Target Material for the Injection Complex of the BELA Facility

To realize the simulation experiments with the use of two ion beams at the injection complex of the BELA accelerator (Based on ECR ion source Linear Accelerator), it is necessary to determine the energy and irradiation angle of the beam of light ions which will be implanted into the region of radiation damage induced by heavy-ion beam. The depth of light-ion implantation is determined by the energy and kind of particles initiating the damage, as well as by their incidence angle. It is supposed that the incidence direction of heavy ions will coincide with the normal to the specimen surface. In our work, the necessary implantation zone for the iron ion beam with an energy of 3.2 MeV is located at depths of 300–800 nm. The simulation of the hydrogen and helium ion paths in the material of the iron target in the energy range from 150 to 600 keV at the angle to the normal from 0° to 65° is performed. The range of energies and irradiation angles for the hydrogen and helium ions are determined for the implantation into the radiation-induced defect-formation zone.     

混合堆第一壁中子辐照损伤模拟

利用蒙特卡罗程序和辐照损伤程序,通过构建模型,对常用的第一壁材料W,Fe,Be的中子辐照造成的离位损伤、裂变气体产生量进行了模拟计算,结果表明,混合堆与纯聚变堆相比,可以明显降低对第一壁材料的损伤要求。在W,Fe,Be三种材料之中,对于纯聚变堆来说,Be的离位损伤最小;对于混合堆来说,W的离位损伤、裂变气体产生量最低。从中子辐照损伤的角度来说,Be更适宜作纯聚变堆的第一壁材料,而W则更适宜作混合堆的第一壁材料。     

高能重离子辐照的低活化钢硬化效应

为了探讨聚变堆候选低活化钢的抗辐照性能,在兰州重离子加速器国家实验室HIRFL的材料辐照终端,利用63 MeV的~(14)N离子和336 MeV的~(56)Fe离子在-50?C下对一种国产低活化钢进行辐照实验.借助离子梯度减能装置,使入射离子能量在0.22—6.17 MeV/u之间变化,从而在样品表面至24μm深度范围内产生0.05—0.20 dpa的原子离位损伤坪区.利用纳米压痕仪测试样品辐照前后的显微硬度,通过连续刚度测量(constant stiffness measurement)得到低活化钢硬度的深度剖面信息.使用Nix-Gao模型很好地描述了纳米压痕硬度随深度递减的现象(压痕尺寸效应,indentation size effect),从而有效避免了低能离子辐照的软基体效应(softer substrate effect).正电子湮灭寿命谱显示低活化钢在辐照之后长寿命成分增加,说明样品中产生了大量缺陷形成空位团,从而导致了材料力学性能的变化,在离子辐照剂量增加至0.2 dpa时,平均寿命τ_m增加量逐渐变慢,材料中辐照产生的缺陷趋于饱和.     

碳离子辐射诱导秀丽隐杆线虫生殖细胞凋亡研究

重离子辐射具有独特的深度剂量分布和较高的相对生物学效应,被认为是理想的放疗手段。重离子的生物学效应在径迹形成过程中由多个物理参量共同决定,而这些物理参量和离子入射深度紧密相关,因此明确离子不同入射深度的生物学效应对重离子肿瘤放疗方案的设计和优化有着重要的理论和应用价值。使用兰州重离子研究装置HIRFL-CSRe 终端的碳离子束作为辐射源,以活体模式动物线虫作为实验对象,以线虫生殖细胞的凋亡水平作为生物学检测终点,研究了10 和20 Gy 碳离子辐射在辐射的入口、坪区和峰区的当代生物学效应和对后代个体基因组不稳定性的影响。结果表明:10 和20 Gy 碳离子辐射在三个不同的辐照区域内均显著增加了辐射当代的线虫生殖腺细胞的凋亡水平,并表现出一定的辐射区域和辐射剂量依赖性。同时,辐射诱导的后代个体基因组不稳定性也表现出一定的辐射区域和辐射剂量相关性。Heavy ion irradiation is a perfect means in radio-therapy due to its special depth dose distribution and high relative biological effects. The biological effects of heavy ion irradiation are determined by some major physical parameters, and vary along the tracks of heavy ions. Therefore, it is very significant for the tumor radio-therapy to investigate the biological effects along whole range of heavy ion radiation. In the present study, Caenorhabditis elegans, a model in vivo, was irradiated by carbon ion beams from HCRFL-CSRe, The level of germ cell apoptosis of worms was used as a checking endpoint for DNA damage, the effects of carbon irradiation located in the entrance, plateau and peak regions on the genomic instability of the irradiated worm and their progeny were detected. The results showed that the 10 and 20 Gy of carbon ion radiations led to the increased germ cell apoptosis in irradiated worms and these effects depend on the worm location along the range of carbon ions and the irradiation dosage. The results also suggested that heavy ion irradiation induced the up-regulated genomic instability in their progeny, and might be related to both the irradiation dose and the irradiated location.     

钨辐射损伤随辐照剂量变化的重离子辐照模拟研究

采用重离子辐照模拟方法和正电子湮没寿命测量技术研究了钨辐射损伤随辐照剂量的变化。20,60和90dpa（每个原子的位移次数）辐照损伤水平的实验结果表明,辐照在钨中产生单空位、双空位、位错和空位团等缺陷;随辐照剂量的增大,单空位、双空位和位错浓度增加,空位团的尺度和浓度都随之增大。Radiation damage in W has been studied as a function of irradiation dose by heavy ion simulation and positron annihilation lifetime measurement. The experimental results of 20, 60 and 90 dpa irradiations illustrate that the mono-and di-vacancies, dislocations and vacancy clusters are produced by the irradiation. The concentrations of the mono-and di-vacancies and dislocations and both the concentration and size of the vacancy clusters or voids all increase with the increasing of the irradiation dose.     

PNP输入双极运算放大器在不同辐射环境下的辐射效应和退火特性

研究了PNP输入双极运算放大器LM837在1 MeV电子和⁶⁰Coγ源两种不同辐射环境中的响应特性和变化规律. 分析了不同偏置状态下其电离辐照敏感参数在辐照后三种温度 (室温, 100 ℃, 125 ℃)下随时间变化的关系, 讨论了引起电参数失效的机理. 结果表明: 1 MeV 电子辐照LM837引起的损伤主要是电离损伤, 并且在正偏情况下比⁶⁰Coγ源辐照造成的损伤大; 辐照过程中, 不同辐照源正偏条件下的偏置电流变化都比零偏时微大; 在不同的辐照源下, LM837辐照后的退火行为都与温度有较大的依赖关系, 而这种关系与辐照感生的界面态密度增长直接相关. 关键词： PNP 输入双极运算放大器 60Coγ源')" href="#">电子和⁶⁰Coγ源 偏置条件 退火     

位移效应对量子点激光器的性能影响

从理论上分析了位移效应对量子点激光器的影响, 并推导了量子点激光器阈值电流相对变化、输出功率相对变化的位移损伤公式. 对量子点激光器进行了中子辐照实验, 观察到了阈值电流的增加. 结合实验结果确定了量子点载流子非辐射复合速率的损伤因子的表达式, 公式计算结果与实验结果符合较好, 证明了模型的正确性. 得到的公式可用于预测量子点激光器在辐射环境下的性能变化, 有着较大实际应用价值. 关键词： 量子点激光器 位移损伤 缺陷     

离子辐照单晶Si损伤效应的研究

回顾了低能离子注入单晶Si经由核弹性碰撞引起的损伤特征及其常规的研究方法,介绍了快重离子辐照单晶Si经由电子能损引起的损伤特点及研究现状,并对该领域的研究作了展望. The radiation damage in silicon induced by low energy ion implantation was briefly reviewed together with a short introduction to the common techniques in the area. The damage characteristics of swift heavy ion irradiation in silicon and its investigations were introduced with emphasis on the effects induced by processes of electronic energy losses. It is shown that swift heavy ion can induce defects far beyond the projected range and up to 28 MeV/μm the electronic energy ...     

羧甲基-β-1,3-葡聚糖对人肝癌HepG2细胞的放射增敏作用

本研究旨在探讨羧甲基-β-1,3葡聚糖（CMG）对人肝癌HepG2细胞X射线或12C6+离子束辐射敏感性的影响。首先用CCK-8法检测CMG对HepG2细胞的生长抑制情况,得到半数抑制浓度（IC50）为120.6μg/mL。用浓度为0.1×IC50的CMG预处理HepG2细胞24 h,再给予2 Gy X射线或12C6+离子束辐照（CMG+辐照组）;CMG未处理组直接接受2 Gy X射线或12C6+离子束辐照（辐照组）。对比分析辐照组和CMG+辐照组细胞的克隆存活、DNA损伤、凋亡与周期分布、细胞内活性氧（ROS）水平。发现:与X射线辐照组相比,相同剂量的12C6+离子辐照组克隆存活率更小,DNA损伤和周期阻滞更加严重,细胞凋亡率和细胞内ROS水平也更高。与单独X射线或12C6+离子束辐照组相比,CMG+辐照组克隆存活率明显降低,细胞凋亡率随辐照后CMG作用时间的延长而明显增加,CMG使辐照后细胞内ROS维持在一个较高的水平,同时CMG明显加重了单独辐照诱导的DNA损伤和周期阻滞。结果表明,与X射线相比,HepG2细胞对相同剂量的12C6+离子辐射更敏感;CMG可增加HepG2细胞对X射线或12C6+离子辐射的敏感性;CMG可能通过增加受照HepG2细胞内的ROS水平,加剧辐照诱导的DNA损伤,促进辐射诱导细胞凋亡而起到辐射增敏作用。This study aims to investigate the effect of carboxymethy-β-1, 3-glucan (CMG) on the sensitivity of human hepatoma HepG2 cells to X-rays or 12C6+ ions irradiation. First, the inhibitory effect of CMG on the growth of HepG2 cells was detected by CCK-8 assay, and the half maximal inhibitory concentration (IC50) was 120.6 μg/mL. HepG2 cells were pretreated with CMG at a concentration of 0.1×IC50 for 24 h and then irradiated with 2 Gy X-ray or 12C6+ ion beams (CMG + irradiation group). CMG untreated group was directly irradiated by 2 Gy X-rays or 12C6+ ions beam (irradiation group). The clone survival, DNA damage, cell apoptosis, cell cycle distribution, and intracellular reactive oxygen species (ROS) levels in irradiation group and CMG + irradiation group were comparatively analyzed. The results showed that the clone survival rate was lower, DNA damage and cycle arrest were more serious, and the rate of apoptosis and intracellular ROS levels were higher in 12C6+ ions irradiation group than those in the same dose of X-rays irradiation group. Compared with X-rays or 12C6+ ions irradiation group, the clone survival rate of CMG + irradiation group was significantly decreased, and the apoptosis rate significantly increased with the prolongation of CMG treatment post-irradiation; CMG maintained intracellular ROS at a higher level after irradiation, CMG also significantly aggravated radiation-induced DNA damage and cycle arrest. These results indicated that HepG2 cells were more sensitive to 12C6+ ions radiation than those at the same dose of X-rays. CMG increased the sensitivity of HepG2 cells to X-rays or 12C6+ ions irradiation by increasing intracellular ROS level, exacerbating radiation-induced DNA damage and promoting radiation-induced apoptosis in irradiated HepG2 cells.     

乏氧细胞线粒体与肿瘤辐射抗性

综述了乏氧环境对细胞整体和对线粒体的影响,正常细胞线粒体呼吸链在乏氧环境下的损伤及其与肿瘤的关系,并对肿瘤细胞适应乏氧环境的机制进行了阐述。总结了线粒体作为供能细胞器,对肿瘤细胞在乏氧条件下生长、侵袭和转移及获取能量过程中的作用,并介绍了中国科学科院近代物理研究所利用重离子辐照所做的相关研究成果,包括不同剂量重离子对线粒体DNA超螺旋构象及线粒体功能的影响,同一剂量不同时间重离子辐照后对线粒体DNA 4 977 大片段损伤累积的影响。The hypoxia environment on the cells and mitochondria, and the damage of normal cells mitochondrial respiratory chain in hypoxia and its relationship with tumors are reviewed. In addition, the tumor radiation resistance mechanism in hypoxia are summarized. It also expounds that mitochondria, as energy supply organelles for cells, are related to tumor cells growth, invasion and metastasis in hypoxia environment, besides, it gives a brief introduction to the mitochondria study of the Institute of Modern Physics, Chinese Academy of Sciences with heavy ion irradiation, including effects of different dose of heavy ion on mitochondrial DNA superhelix conformation and function of mitochondria,and the influence on mitochondrial DNA 4 977 damage cumulation in different time after the same dose of heavy ion irradiation.     

Monitoring by Raman spectroscopy of the damage induced in the wake of energetic ions

This article reports micro‐Raman experiments performed on cross sections of 6H‐SiC crystals irradiated with heavy ions of different energies. The results demonstrate that this technique is very powerful to quantify the damage created in the wake of energetic ions from the surface of samples down to the ion resting position. For slow ions (900‐keV I), ballistic collisions lead to the amorphization of the surface region of samples. For swift ions (36‐MeV W), the surface region remains crystalline and amorphization occurs around the end of the ion path. Moreover, synergistic effects between electronic and nuclear slowing down processes are put forward. The methodology used in this work may be adapted to other materials where radiation effects need to be investigated, provided that the damage created by irradiation is detectable by Raman spectroscopy. Copyright © 2014 John Wiley & Sons, Ltd.     

重离子放射治疗双微小展宽峰组合照射方法

在基于被动式束流配送系统的分层适形重离子治疗当中,需要利用微型脊形过滤器（mini ridge filter,mini-RF）将单能重离子束Bragg峰展宽为峰区近似高斯分布的微小展宽峰（mini spread-out Bragg peak,mini-SOBP）,从而达到减少照射分层数及照射时间的目的。采用较宽的mini-SOBP可以有效减少照射分层数,但会增大展宽Bragg峰（SOBP）远端剂量跌落距离,增加对靶区后方正常组织或危及器官的辐照剂量。这一问题可以通过双mini-SOBP的组合照射方法来解决。使用2种mini-RF对单能重离子束Bragg峰略微展宽得到2种半高宽（FWHM）且剂量分布近似高斯分布的mini-SOBP,通过基于放射生物学模型的剂量优化,证实了在SOBP平顶区按生物有效剂量均匀和物理吸收剂量均匀的展宽情况下,双mini-SOBP组合照射方法均可以在减少照射分层数的同时较大幅度地减小SOBP远端剂量跌落距离。In layer-stacking conformal heavy-ion therapy based on passive beam delivery system,it is necessary to minimize the layer numbers and reduce irradiation time for layer-stacking conformal heavy-ion therapy.Gaussian shaped mini spread-out Bragg peaks (mini-SOBP) were generated by mini ridge filters (mini-RF) for monoenergetic heavy ion beams.It is effective to minimize the layer number by using mini-SOBPs with the bigger full width at the half maximum (FWHM),but in this way the distal dose fall-off distance of a spread-out Bragg peak (SOBP) will be enlarged,increasing the radiation damage to normal tissue or organ at risk behind the target volume.This issue could be solved by using mini-SOBPs based combinatorial irradiation method.In this study,Gaussian shaped mini-SOBPs with two different FWHMs were generated by two different mini-RFs for monoenergetic heavy ion beams.Based on radiobiological model calculations and dose optimizations,the mini-SOBPs based combinatorial irradiation method was confirmed to reduce the distal dose fall-off distances of SOBPs while minimizing the layer numbers for layer-stacking conformal heavy-ion therapy.     

65 nm互补金属氧化物半导体场效应和晶体管总剂量效应及损伤机制

对65 nm互补金属氧化物半导体工艺下不同尺寸的N型和P型金属氧化物半导体场效应晶体管(NMOSFET和PMOSFET)开展了不同偏置条件下电离总剂量辐照实验.结果表明:PMOSFET的电离辐射响应与器件结构和偏置条件均有很强的依赖性,而NMOSFET表现出较强的抗总剂量性能;在累积相同总剂量时,PMOSFET的辐照损伤远大于NMOSFET.结合理论分析和数值模拟给出了PMOSFET的辐射敏感位置及辐射损伤的物理机制.