Vortex oscillations in TFA-grown YBCO thin-films with BZO nanoparticles

An ac susceptibility methodology has been applied to investigate the vortex dynamics of YBa₂Cu₃O_7−x–BaZrO₃ nanocomposites grown by the chemical solution deposition TFA route, close to the irreversibility line. By analysing the linear, non-dissipative Campbell regime at low ac fields, we determined the temperature and field dependence of the restoring pinning constant, α_L(H_dc, T), characterising the harmonic oscillation of vortices inside their potential wells. Different than standard TFA–YBCO films, BZO nanocomposites displayed increasing α_L(H_dc) curves in the whole studied (H_dc, T) phase diagram, a behavior not predicted by the standard collective theory. We suggest results may be explained by the softening of the vortex-lattice, owed to the microstrain induced by the nanoparticles in the YBCO matrix.     

Growth and magnetic characterization of YBCO films

Summary Epitaxial films of YBa₂Cu₃O_7−x were depositedin situ on LaAlO₃ substrates using single-target 90° off-axis sputtering. The films were characterized by magnetization measurements (M vs. T, H), applying the field parallel toc-axis. The observed differences in theT _c andJ _c values are attributed to the different oxygen content in the superconducting films. Paper presented at the ?VII Congresso SATT?, Torino, 4–7 October 1994.     

The effect of BZO doping concentration and thickness dependent properties of YBCO films grown by PLD on buffered NiW substrates

The effect of BaZrO₃ (BZO) doping is systematically studied in YBa₂Cu₃O_6+x (YBCO) thin films deposited by pulsed laser deposition (PLD) on buffered NiW substrates. Based on the structural and magnetic properties, the optimal BZO doping concentration is obtained to vary between 4 and 7.5 wt.%, depending mainly on applied magnetic field. This relatively high optimal concentration is linked to the nanograined target material and metal substrate that cause low-angle grain-boundaries and in-plane spread of YBCO crystals on NiW. Thickness dependent analysis of undoped and BZO-doped YBCO films predicts differences in growth mechanisms where early growth next to the substrate interface is 2D-type in BZO-doped films. This leads to the situation where crystallographic structure as well as superconducting properties are improved when the film develops and the thickness is increased. Therefore from the resistivity measurements a threshold thicknesses where reasonable properties occur are determined for both set of films. Measurements in thermally activated flux-flow regime (TAFF) indicate that above the threshold thickness relatively strong and isotropic vortex pinning is realized in BZO-doped YBCO films. Generally, this paper demonstrates that especially for thin film applications on NiW substrates even more compatible buffer layer structures should be utilized.     

高质量FeSe单晶薄膜的制备及相关性能表征

在铁基超导体中,FeSe具有最简单的晶体结构和化学组成,而且其超导转变温度具有较大的调控空间,因此适合作为超导机理研究和应用的载体.高质量样品的研制是物性研究和器件应用的前提,本文系统地研究了利用激光脉冲沉积技术制备FeSe薄膜的工艺条件,在多种衬底上成功地制备出高质量的β-FeSe薄膜,并首次实现了超导临界转变温度从小于2 K到14 K的连续调控,这为FeSe超导机理研究提供了样品支持.为探究FeSe薄膜超导电性变化的起因,从β-FeSe超导电性与晶格常数c正相关出发,基于简单的费米面填充假设,第一性原理计算可以很好地解释晶格常数c的变化规律,但该假设并不能完全符合角分辨光电子能谱实验给出的电子结构演变过程.因此β-FeSe薄膜的超导电性、晶格结构和电子结构三者之间的关系还有待澄清,该问题的解决将为FeSe超导机理研究提供重要的线索,而上述系列高质量的β-FeSe薄膜样品恰好能为该问题的研究提供理想的载体.本文根据实验和已有的相关研究结果,详细介绍了FeSe薄膜的脉冲激光沉积制备及其优化,以期为后续的薄膜研究应用提供参考.     

Deposition and characterization of sputtered ZnO films

Zinc oxide thin films were deposited by radio frequency magnetron sputtering at room temperature using a metallic zinc target in a gas mixture of argon and oxygen. Plasma power, oxygen /argon gas ratio, gas pressure, and substrate temperature were varied, and an experimental design method was used to optimize these deposition parameters by considering their interdependence. Crystalline structures and film stresses were examined. Post-deposition rapid thermal annealing was also carried out to observe its effects on the film properties. Statistical analysis was then used to find the optimal sputtering conditions. Results indicated that plasma power and gas pressure have the largest effects on film crystallization and stress and that postdeposition annealing can be used to improve the quality of the film properties.     

Deposition of a-C:H films on UHMWPE substrate and its wear-resistance

In prosthetic hip replacements, ultrahigh molecular weight polyethylene (UHMWPE) wear debris is identified as the main factor limiting the lifetime of the artificial joints. Especially UHMWPE debris from the joint can induce tissue reactions and bone resorption that may lead to the joint loosening. The diamond like carbon (DLC) film has attracted a great deal of interest in recent years mainly because of its excellent tribological property, biocompatibility and chemically inert property. In order to improve the wear-resistance of UHMWPE, a-C:H films were deposited on UHMWPE substrate by electron cyclotron resonance microwave plasma chemical vapor deposition (ECR-PECVD) technology. During deposition, the working gases were argon and acetylene, the microwave power was set to 800 W, the biased pulsed voltage was set to −200 V (frequency 15 kHz, duty ratio 20%), the pressure in vacuum chamber was set to 0.5 Pa, and the process time was 60 min. The films were analysed by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, nano-indentation, anti-scratch and wear test. The results showed that a typical amorphous hydrogenated carbon (a-C:H) film was successfully deposited on UHMWPE with thickness up to 2 μm. The nano-hardness of the UHMWPE coated with a-C:H films, measured at an applied load of 200 μN, was increased from 10 MPa (untreated UHMWPE) to 139 MPa. The wear test was carried out using a ball (Ø 6 mm, SiC) on disk tribometer with an applied load of 1 N for 10000 cycles, and the results showed a reduction of worn cross-sectional area from 193 μm² of untreated UHMWPE to 26 μm² of DLC coated sample. In addition the influence of argon/acetylene gas flow ratio on the growth of a-C:H films was studied.     

双轴晶衬底上双轴晶单晶薄膜的椭偏测量

本文给出了两种测量双轴晶衬底上双轴晶单晶膜的折射率和膜厚的方法及测量的公式.我们利用这种方法测量了所研制的KTP光波导薄膜层的折射率和膜厚.     

Nonlinear microwave response of YBCO single crystal in constant magnetic field

The generation of a microwave second harmonic by a YBCO single crystal in a dc magnetic field was studied. We found that the signal existed only when there was a direct screening current. As a result, the pinning current as a function of magnetic field can be derived directly from the second harmonic intensity versus the magnetic field. The experimental data were interpreted in terms of a generalized model of the critical state taking into account diffusion of vortices and the absence of a barrier stopping vortices from leaving the sample. We have shown that, in a decreasing dc magnetic field, the current density is considerably lower than both the critical and screening current densities in an increasing dc field. Our experiments indicate that vortices are not the sources of radiation at the double frequency. A relation between the mechanism of harmonic generation in the Meissner phase and modulation of the order parameter by the microwave magnetic field (Ginzburg-Landau nonlinearity) is discussed. It is remarkable that, by measuring the second harmonic intensity in the Meissner state versus temperature, one can obtain the magnetic field penetration depth as a function of temperature with fairly good accuracy. Zh. éksp. Teor. Fiz. 115, 2242–2253 (June 1999)     

平面靶直流溅射制备YBCO高温超导薄膜研究

开展了平面靶溅射法制备YBa2Cu3O7-δ(YBCO)高温超导薄膜工艺研究,以达到提高沉积速率的目的。通过增加工作气体总压(Pt),采用基片旋转达到离轴溅射模式,有效地克服了传统平面靶直流溅射法中高能粒子轰击和负离子反溅射现象。在两英寸LaA lO3(LAO)基片上成功外延生长得到了微观结构良好、电学性能优越(临界电流密度Jc=2.3/2.0mA/cm2)的双面YBCO高温超导薄膜。     

c-axis tunneling on YBCO films

We have measured I(V) characteristics of c-axis planar tunnel junctions on Y₁Ba₂Cu₃O _{7 - δ} films. Our results and their analysis provide experimental support for the importance of the two-dimensional character of the YBCO band structure, and a method to measure the ratio between the Fermi energy of YBCO and the barrier height. The analysis is based on the relation between the linear conductance background, related to the inelastic tunneling component, and the zero bias conductance, related to the elastic one. Received 24 September 2000 and Received in final form 15 November 2000     

Electron microscopic studies of single crystal inclusions in pyroboroncarbon

A study of the composition and structure of large single crystal inclusions formed inside cavities in pyroboroncarbon by means of energy dispersive X-ray microanalysis and electron diffraction analysis shows that they correspond to one phase of rhombohedral boron carbide. Bright-field images obtained by transmission electron microscopy show that their growth continues throughout the technological cycle of material growth due to the diffusion of boron atoms from the pyrocarbon phase of pyroboroncarbon adjacent to the cavities.     

Formation and crystal structure of metallic inclusions in a HPHT as-grown diamond single crystal

One of the most important characteristics associated with crystal growth technology is the entrapment of inclusions by the growing crystal. Diamond single crystals prepared under high temperature-high pressure (HPHT) usually contain metallic inclusions. In the present paper, metallic inclusions in a diamond grown from a Fe-Ni-C system using the HPHT method have been, for the first time, systematically examined by transmission electron microscopy (TEM). Energy dispersive X-ray spectrometry (EDS) , combined with selected area electron diffraction (SAD) patterns, has been used to identify the chemical composition and crystal structure of the metallic inclusions. The metallic inclusions were found to be composed mainly of cubic γ-(FeNi), face-centered cubic (FeNi)₂₃C₆, ortho-rhombic Fe₃C and hexagonal Ni₃C, which may have been formed through the entrapment of molten catalyst by the growth front or through reaction of the trapped melt with contaminants in the diamond. Received: 19 June 2000 / Accepted: 21 June 2000 / Published online: 16 August 2000     

Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. Φ-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a-b YBCO planes rotated by 120° to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 °C is applied.     

On the rotation of non-epitaxy crystallites on single crystal substrate

The experimental results of Masson et al. [Surf. Sci. 27 (1971) 463] were further interpreted with regard to the rotation behavior of non-epitaxy Au crystallites on a KCl(100) substrate, which developed into primary epitaxy ([111]_Au 6 [100]_KCl; [11̄0]_Au 6 [010]_KCl), and “second” epitaxy (in fact [100]_Au 6 [100]_KCl; [010]_Au 6 [010]_KCl and [100]_Au 6 [100]_KCl; [010]_Au 6 [011]_KCl) upon annealing at 94°C. These epitaxy orders were clarified to be nonsequential events on the basis of the development of electron diffractions (220), (111) and (200) of Au. The “second” epitaxy can be attributed to the later formation of a (100)_Au|(100)_KCl contact in comparison with the preferred (111)_Au|(100)_KCl contact in the as-deposited state. The Au crystallites with irrational contact plane should have rotated and changed shape before bifurcating into (111)_Au|(100)_KCl and (100)_Au|(100)_KCl contact, upon which viscous rotation was still feasible, until the primary and “second” epitaxy were reached, respectively.     

Polarization anisotropy of single crystal opal films

Single-crystal opal films have been prepared by the moving-meniscus and gravitational sedimentation methods. It has been found using conoscopy and spectroscopic ellipsometry that these photonic crystal opal films possess birefringence so that the optical indicatrix is a three-axial ellipsoid. The indicatrix axis N _g is directed along the crystal growth axis, the axis N _m lies in the film plane and is orthogonal to the axis N _g , and the axis N _p coincides with the normal to the (111) crystallographic plane, which corresponds to the triclinic system of the crystal.     

Deposition and characterization of diamond epitaxial thin films on silicon substrates

Heteroepitaxial diamond growth has been attempted on mirror-polished monocrystalline (001), (111), and (110) silicon substrates by microwave plasma CVD. The surface morphology and the crystallographic properties of the films were characterized by means of Scanning Electron Microscopy (SEM), Raman spectroscopy, X-ray diffraction, and X-ray and Raman pole-figure analysis. The results demonstrate epitaxial growth of diamond on both (001) and (111) oriented silicon substrates. Preliminary results give strong evidence for substrate-induced orientation of the diamond crystallites also on (110) oriented silicon substrate. The heteroepitaxy can be assigned to the oriented covalent bonding across the interface between diamond and silicon.     

Deposition of ZnO thin films on (100) γ-LiAlO2 substrate

Optical properties for ZnO thin films grown on (100) γ-LiAlO2 (LAO) substrate by pulsed laser deposition method were investigated. The c-axis oriented ZnO films were grown on (100) γ-LiAlO2 substrates at the substrate temperature of 550 C. The transmittance of the films was over 85%. Peaks attributed to excitons were shown in absorption spectra, which indicated that thin films had high crystallinity. Photoluminescence spectra with the maximum peak at 540 nm were observed at room temperature, which seemed to be ascribed to oxygen vacancy in the ZnO films caused by diffusion of Li from the substrates into the films during the deposition.     

Influence of MgO surface conditions on the in-plane crystal orientation and critical current density of epitaxial YBCO films

The effect of magnesium oxide (MgO) surface conditions on in-plane grain orientation and critical current density of epitaxial YBa₂Cu₃O₇ (YBCO) films was systematically investigated. The MgO substrates were either “as received” or stored for some time, cleaned using different methods and lithographically prepared for our step-edge junction devices. The YBCO films were grown via reactive thermal co-evaporation by Theva, GmbH. The surface characterisation of MgO substrates was studied using X-ray photoelectron spectroscopy (XPS). The in-plane grain orientation of the YBCO films was studied by means of X-ray diffraction (XRD) φ-scan and the critical current density was measured for the XRD scanned samples. The surface condition of the MgO substrates was found to have a strong influence on the in-plane grain orientation and the critical current density of the YBCO films. The MgO substrates with a degraded or contaminated surface gave rise to 45° grain misorientation in YBCO films and reduced the critical current density. A final process step using a low energy Ar ion beam etching (IBE) of the MgO substrates prior to the YBCO film deposition was found effective in removing the in-plane grain misorientation and promoting the growth of perfectly aligned c-axis YBCO films.     

Ferromagnetic resonance and relaxation in single crystal metal films

We review the results of oblique-angle ferromagnetic resonance experiments in single-crystal metal films, and compare them with recent calculations for oblique-angle resonance based on isotropic metals and on anisotropic insulators with magnetoelastic interactions.Supported in part by the National Science Foundation.We are please to acknowledge the contributions of our colleagues J. L. Bleustein, T. Kobayashi, and C. Vittoria.