La1.85Sr0.15CuO4中的同位素效应

利用同位素间 Eliashberg 函数的关系及 Eliashberg 方程,我们计算了 La_(1.85)Sr_(0.15)CuO_4对应于~(16)O 及~(18)O 的 T_c,从而得到同位素指数α的值.计算结果与不同实验进行了比较.传统的电声机制可以解释这个同位素效应.     

La1.85Sr0.15CuO4纳米线阵列的微结构与超导电性

采用溶胶-凝胶结合多孔氧化铝硬模板约束的方法,成功制备出直径约30nm的La1.85Sr0.15CuO4纳米线阵列,用XRD与X-ray EDX测定了所制备纳米线的物相与成分;FE-SEM与TEM表征了其形貌特征;由HRTEM与SAED测量分析了其微结构;磁化强度的测量结果表明样品具有Tc= 30 K的超导电性,比块材La1.85Sr0.15CuO4的Tc稍低.分析表明所制备的样品中存在一种a,b轴拉伸,c轴压缩的结构畸变,减弱了铜氧面内Cu3d和O2p轨道的杂化程度,减小了a,b面内的态密度,从而压制了体系的超导电性.     

薄膜厚度对La1.85Sr0.15CuO4薄膜结构和超导电性的影响

使用直流同轴磁控溅射法,在SrTiO3(STO)衬底上成功制备出c取向的La1.85Sr0.15CuO4(LSCO)超导薄膜.通过电输运测量系统和X射线衍射仪研究了薄膜厚度对LSCO(x＝0.15)薄膜电学性质和晶体结构的影响.实验证明随着膜厚增加,(006)衍射峰的半高宽(Full Width at Half Maximum,FWHM)逐渐减小,薄膜的取向性增强,与此同时,薄膜的超导转变温度TC逐渐提高.     

在SrTiO3、LaAlO3和Y-ZrO2衬底上外延生长La1.85Sr0.15CuO4、La2CuO4和Nd1.85Ce0.15CuO4、Pr2CuO4薄膜

利用脉冲激光法研究了在（１００）ＳｒＴｉＯ３（ＳＴＯ）、（１００）ＬａＡｌＯ３（ＬＡＯ）和（１００）Ｙ－ＺｒＯ２（ＹＳＺ）衬底上外延生长ＬａＣｕＯ４（ＬＣＯ）,Ｌａ１．８５Ｓｒ０．１５ＣｕＯ４（ＬＳＣＯ）,Ｎｄ１．８５Ｃｅ０．１５ＣｕＯ４（ＮＣＣＯ）和Ｐｒ２ＣｕＯ４（ＰＣＯ）薄膜的工艺技术。利用Ｘ光衍射仪检测了不同条件下制备的薄膜样品结构和取向。Ｘ射线衍结果表明,在事适的制膜条件下可以在这三种衬底     

Superconducting and magnetic properties of the oxide superconductors La1.85Sr0.15Cu1−xFexO4

Mössbauer and magnetic measurements have been made in the perovskite superconductors La_1.85Sr_0.15Cu_1−x ⁵⁷Fe_xO₄ for x=0.0025, 0.005, 0.01, 0.05 and 0.10. The superconducting transition temperature is rapidly depressed as x increases, reaching T_c=0 for x≈0.03. Mössbauer data for x=0.05 show behavior below ≈15 K which indicates magnetic ordering. Magnetic susceptibility data give an effective moment of 3–4 μ_B/Fe atom, and a hand-like susceptibility which increases with x.     

Effects of γ rays irradiation on structure and property of TiO2 thin films

TiO₂ thin films were deposited on a glass substrate by the radio frequency magnetron sputtering method, and annealed for 2 h at temperatures of 550°C. Then, ⁶⁰Co γ rays with different doses were used to irradiate the resulting TiO₂ thin films. The surface features of films before and after irradiation were observed by scanning electron microscope (SEM). Simultaneously, the crystal structure and optical properties of films before and after irradiation were studied by X-ray diffraction (XRD), UV–VIS transmission spectrum and Photoluminescence (PL) spectrum, respectively. The SEM analysis shows that the film is smooth with tiny particles on the film surface, and non-crystallization trend was clear after irradiated with γ rays. The XRD results indicated that the structure of the film at the room temperature mainly exists in the form of amorphous and mixed crystal at a sputtering power of 200 W, and non-crystallinity was more obvious after irradiation. Obvious difference can be found for the transmissibility of the irradiated and pre irradiation TiO₂ films by the UV-VIS spectra. The color becomes light yellow, and the new absorption edge also appeared at about 430 nm. PL spectra and photocatalysis experiments indicate that the photocatalysis degradation rate of the TiO₂ films on methylthionine chloride solution irradiated with the maximum dose can be increased to 90%.     

Zn,Ni,Mg高掺杂La1.85Sr0.15CuO4的晶体结构比较

对Zn ,Ni,Mg高掺杂的La1.85Sr0 .15CuO4 (LSCO)超导体的X射线衍射谱进行了仔细的分析 ,从而获得了各掺杂样品的晶格常量、原子结构参量及衍射的峰形参量 ,比较了不同掺杂所引起的晶体结构的差异 ,计算了由于掺杂所产生的晶格内部的微应变 ,结果表明非磁性金属Zn ,Mg掺杂比磁性金属Ni掺杂更强烈地抑制了LSCO的超导电性可能与材料中晶格的微应变有关     

Al局域替代La1.85Sr0.15CuO4中的Cu引起的电子结构变化

本用Ｒｅｃｕｒｓｉｏｎ方法研究Ａｌ局域替代Ｌａ１．８５Ｓｒ０．１５ＣｕＯ４中的Ｃｕ引起的电子结构变化。认为Ａｌ替代后使得ＣｕＯ２面空穴载流子浓度减少，这对超导电性有相当破坏作用；此外，因掺杂而诱导出的有效磁矩也对超导电性起部分破坏作用。     

超导氧化物La1.85Sr0.15CuO4/超高分子量聚乙烯复合材料的输运性质

采用热压法获得了具有不同混合比例的超导氧化物La1.85Sr0.15CuO4/超高分子量聚乙烯导电复合材料,并利用x射线衍射、扫描电子显微镜和标准四引线方法对复合材料的结构和低温电输运性质进行测量.实验结果显示,超导氧化物La1.85Sr0.15CuO4颗粒随机分布在聚合物本体中,相互间没有连接构成网络结构.在正常态下,复合材料的电阻-温度变化曲线给出类半导体行为.但对应于超导氧化物La1.85Sr0.15CuO4的超导转变温度Tc处,复合材料的电阻-温度变化曲线出现了极小值.室温下电阻率ρ随外加电场强度E的变化曲线测量结果表明,ρ-E曲线为一线形关系,随着电场强度E增加,电阻率ρ下降.文中对可能存在的导电机制进行分析,结果表明隧道贯穿模型可以很好地解释复合材料的导电机制.另外,外加电场强度E对复合材料的电输运特性有明显的影响.     

柠檬酸盐凝胶法制备La1.85Sr0.15CuO4超导样品工艺研究

采用溶胶凝胶法制备LSCO超导样品.凝胶中不同组元分布均匀,达到分子级的程度,有利于样品成相.通过我们的研究发现,仅在750℃就可以合成具有超导性的LSCO样品;处理过程中通氧,有利于有机物的分解,消除残余碳氮含量.     

Effects of annealing time on the structure,morphology, and stress of gold–chromium bilayer film

In this work, a 200-nm-thick gold film with a 10-nm-thick chromium layer used as an adhesive layer is fabricated on fused silica by the electron beam evaporation method. The effects of annealing time at 300℃ on the structure, morphology and stress of the film are studied. We find that chromium could diffuse to the surface of the film by formatting a solid solution with gold during annealing. Meanwhile, chromium is oxidized on the surface and diffused downward along the grain grooves in the gold film. The various operant mechanisms that change the residual stresses of gold films for different annealing times are discussed.     

Influence of growth morphology on the Néel temperature of CrRu thin films and heterostructures

Dimensionality effects on epitaxial and polycrystalline Cr_1?xRu_x alloy thin films and in Cr/Cr–Ru heterostructures are reported. X-ray analysis on Cr_0.9965Ru_0.0035 epitaxial films indicates an increase in the coherence length in growth directions (1 0 0) and (1 1 0) with increasing thickness (d), in the range 20≤d≤300 nm. Atomic force microscopy studies on these films shows pronounced vertical growth for d>50 nm, resulting in the formation of columnar structures. The Néel temperatures (T_N) of the Cr_0.9965Ru_0.0035 films show anomalous behaviour as a function of d at thickness d≈50 nm. It is interesting to note that this thickness corresponds to that for which a change in film morphology occurs. Experiments on epitaxial Cr_1?xRu_x thin films, with 0≤x≤0.013 and d=50 nm, give T_N–x curves that correspond well with that of bulk Cr_1?xRu_x alloys. Studies on Cr/Cr_0.9965Ru_0.0035 superlattices prepared on MgO(1 0 0), with the Cr layer thickness varied between 10 and 50 nm, keeping the Cr_0.9965Ru_0.0035 thickness constant at 10 nm, indicate a sharp decrease in T_N as the Cr separation layers reaches a thickness of 30 nm; ascribed to spin density wave pinning in the Cr layers for d<30 nm by the adjacent CrRu layers.     

Pressure Effects in the Raman Spectra of La 2−x Sr x CuO 4

Micro-Raman measurements under hydrostatic pressures up to 6 GPa have been carried out on high-quality La 2 m x Sr x CuO 4 polycrystalline compounds with Sr concentration up to x =0.45. The zz scattering polarization has been investigated, where two strong modes due to La/Sr and the apex oxygen, and (in the low Sr concentrations) the soft mode at ～100 cm m 1 are observed. The frequency of the strong modes increases almost linearly with pressure for the Sr concentrations studied. Modifications in the increment rate d y /d p and the phonon width have been detected depending on the amount of doping. For x =0.45 a considerable increase in the width of both strong phonons with pressure was found, which must reflect a separation into phases, since this concentration is close to the solubility limit. The relative intensity of the strong phonons was investigated in connection with its correlation to the transition temperature.     

Factors affecting the superconductivity in the process of depositing Nd1.85Ce0.15CuO4-δ by the pulsed electron deposition technique

On SrTiO₃ single crystal substrate, by using the pulsed electron deposition technique, the high-quality electron doped Nd_1.85Ce_0.15CuO_4−δ superconducting film was successfully fabricated. After careful study on the R-T curves of the obtained samples deposited with different substrate temperatures, thicknesses, annealing methods and pulse frequencies, the effects of them on the superconductivity of the films were found, and the reasons were also analyzed. Additionally, by using the same model of the pulsed laser deposition technique, the relation between the target-to-substrate distance and the deposition pressure was drawn out as a quantitative one. Supported by the Key Project of Zhejiang Provincial Natural Science Foundation (Grant No. Z605131), the ‘100 Talents Project’ of Chinese Academy of Sciences, the Creative Research Group of National Natural Science Foundation of China (Grant No. 60321001) and the National Natural Science Foundation of China (Grant No. 60571029)     

57Fe and119Sn Mössbauer studies on La1.25Nd0.6Sr0.15CuO4

⁵⁷Fe- and¹¹⁹Sn Mössbauer effect studies on 0.5 at %⁵⁷Fe (or¹¹⁹Sn) dopednon-superconducting La_1.25Nd_0.6Sr_0.15CuO₄ in the temperature region 300 K T4.2 K reveal an onset of local magnetic ordering occurring atT _m 32 K for both⁵⁷Fe—as well as¹¹⁹Sn-doped samples. The local magnetic ordering shows up in the presence of a very large transferred hyperfine field ofB _thf 11.0(5)T at the¹¹⁹Sn nuclei. Since such a large field is neither present in antiferromagnetic La₂CuO₄, nor in superconducting La_1.85Sr_0.15CuO₄ or overdoped La_2–xSr_xCuO₄ (x=0.4), the occurrence of such local spin correlations seems to be a signature of the non-superconducting low temperature tetragonal phase of La_1.25Nd_0.6Sr_0.15CuO₄.     

Growth mechanism, microstructure and transport properties of Sr1−x La x CuO2 (x=0.10−0.15) thin films

Sr_1−x La _x CuO₂ (x=0.10−0.15) thin films with an infinite-layer type structure were grown on BaTiO₃ buffered (001) SrTiO₃ substrates by pulsed laser deposition (PLD). The evolution of the growth front was monitored, in-situ, by high-pressure reflection high-energy electron diffraction (RHEED), while the surface morphology was analyzed by means of atomic force microscopy (AFM), ex-situ. X-ray diffraction (XRD) was used to determine the evolution of the film structure with deposition and cooling parameters, as well as to study the type and level of epitaxial strain in the Sr_1−x La _x CuO₂ films. The RHEED data showed that the Sr_1−x La _x CuO₂ films grow on BaTiO₃/SrTiO₃ following a 2D or Stranski-Krastanov mechanism, depending on the La doping level. The transition point (critical thickness d _c) from layer-by-layer like (2D) to island (3D) growth depends on the film stoichiometry: decreasing the La doping concentration x from 0.15 to 0.10, the critical thickness d _c increases from ∼45 nm to ∼75 nm. In order to induce superconductivity, the Sr_1−x La _x CuO₂ films were cooled down under reduction conditions. The as-deposited films showed semiconducting or metallic behavior, the resistivity decreasing with increasing La concentration. Post-deposition vacuum annealing resulted in a superconducting transition onset (but no zero resistance down to 4.2 K) only for some of the x=0.15 Sr_1−x La _x CuO₂ films.     

Ambiguities on structure analysis of Fe–N thin films

Fe–N thin films with good soft magnetic properties were prepared by RF sputtering and vacuum annealed at 250°C under 12000 A/m magnetic field for 4 h. The structure of α′ in thin films deposited at room temperature is different from α′ formed through the Bain mechanism in bulk samples. In thin films, the lattice parameters of α′ are $\text{c=2.866+1.559}\text{C}{}_{\mathrm{<mtext>N</mtext>}}{}^{\mathrm{<mtext>\alpha </mtext><mtext>\prime </mtext>}}\text{,a=2.864+0.181}\text{C}{}_{\mathrm{<mtext>N</mtext>}}{}^{\mathrm{<mtext>\alpha </mtext><mtext>\prime </mtext>}}$.