Synthesis of ternary and quaternary CuInxGa1−xSe2 (0 ≤ x ≤ 1) semiconductor nanocrystals

Semiconducting CuIn_xGa_1−xSe₂ nanocrystals (20–30 nm) have been synthesized over the whole composition range using a facile solution-based method. Depending on the synthesis conditions, the nanocrystals exhibit a cubic or spherical morphology with a narrow size distribution. The band gap increases with increasing Ga concentration and the values are close to those observed in the bulk.     

A crystallographic description of experimentally identified formation reactions of Cu(In,Ga)Se2

This work describes solid-state reactions for the formation of the chalcopyrite compounds CuInSe₂, CuGaSe₂ and Cu(In,Ga)Se₂ on atomic scale. The most important chalcopyrite formation reactions which were identified by the authors by real-time in situ X-ray diffraction in preceding experiments are (A) CuSe+InSe→CuInSe₂, (B) Cu₂Se+2 InSe+Se→2 CuInSe₂ and (C) Cu₂Se+In₂Se₃→2 CuInSe₂. During the selenistaion of a metallic precursor containing gallium a separate fourth reaction occurs: (D) Cu₂Se+Ga₂Se₃→2 CuGaSe₂. The quaternary compound is finally formed by interdiffusion of CuInSe₂ with CuGaSe₂ (E). These five reactions differ in their activation energy and reaction speed. We explain these differences qualitatively by analysing the involved crystal structures for each reaction. It turns out that all reactions involved in the formation of Cu(In,Ga)Se₂ are promoted by epitaxial relations, which facilitates the formation of polycrystalline thin films at temperatures much below those necessary for single crystal growth. Recommendations for the growth of larger grains of Cu(In,Ga)Se₂ containing fewer defects are given.     

离子液体电沉积CuIn_xGa_(1-x)Se_2薄膜(英文)

采用循环伏安法(CV)对离子液体Reline中三元CuCl2+InCl3+SeCl4体系和四元CuCl2+InCl3+GaCl3+SeCl4体系的电化学行为进行了研究。研究表明,In3+并入三元CIS(Cu-In-Se)薄膜体系和Ga3+并入四元CIGS(Cu-In-Ga-Se)薄膜体系均有两种途径:一是发生共沉积,二是直接还原。利用电感耦合等离子体发射光谱(ICP)和扫描电镜(SEM)对沉积电势、镀液温度和主盐浓度对CIGS薄膜组成、镀层表面形貌的影响进行了测试,结果表明通过工艺参数的选择可以控制Ga/(Ga+In)和CIGS薄膜组成并得到化学计量比为Cu1.00In0.78Ga0.27Se2.13的薄膜。     

Insulator–metal transition in Nd0.8Na0.2Mn(1−x)CoxO3 perovskites

The electric and magnetic properties of the perovskites Nd_0.8Na_0.2Mn_(1−x)Co_xO₃ (0x0.2) prepared by the usual ceramic procedure were investigated. The insulator-to-metal-like (IM) transition, closely related to a ferromagnetic arrangement, was revealed for the composition of x=0.04 and a similar tendency was detected for x=0. The insulating behavior persists down to low temperatures for higher contents of cobalt ions in spite of the transition to the bulk ferromagnetism. The properties are interpreted in terms of the steric distortion, tilting of the Mn(Co)O₆ octahedra and the double-exchange interactions of the type Mn³⁺–O²⁻–Mn⁴⁺and Mn^3.5+δ–O²⁻–Co²⁺, respectively. Presence of antiferromagnetic domains in the ferromagnetic matrix for the most of cobalt-substituted samples is supposed.     

Cobalt-doped chalcopyrites CuInSe2: the synthesis and magnetic properties

Two series of samples of the composition CuIn_1?XCo_XSe₂ (m-series) and Cu_1?X/2In_1?X/2Co_XSe₂ (d-series) were prepared by solid-state synthesis and their magnetic properties were investigated. It was shown that cobalt is much better incorporated into the chalcopyrite matrix of the d-series samples, thus providing the onset of paramagnetic properties. Quenching allows the concentration of the incorporated cobalt to increase, which leads to the onset of weak ferromagnetism.

     

离子液体电沉积CuInxGa1-xSe2薄膜

采用循环伏安法(CV)对离子液体Reline中三元CuCl₂+InCl₃+SeCl₄体系和四元CuCl₂+InCl₃+GaCl₃+SeCl₄体系的电化学行为进行了研究。研究表明,In³⁺并入三元CIS(Cu-In-Se)薄膜体系和Ga³⁺并入四元CIGS(Cu-In-Ga-Se)薄膜体系均有两种途径：一是发生共沉积,二是直接还原。利用电感耦合等离子体发射光谱(ICP)和扫描电镜(SEM)对沉积电势、镀液温度和主盐浓度对CIGS薄膜组成、镀层表面形貌的影响进行了测试,结果表明通过工艺参数的选择可以控制Ga/(Ga+In)和CIGS薄膜组成并得到化学计量比为Cu_1.00In_0.78Ga_0.27Se_2.13的薄膜。     

Farbe und Konstitution bei anorganischen Feststoffen, 14. Mitt.: Die Lichtabsorption des zweiwertigen Kupfers in oxidischen Wirtsgittern

Zusammenfassung Um die Beziehungen zwischen der Lichtabsorption des zweiwertigen Kupfers nach isomorphem Einbau in ein oxidisches Wirtsgitter und dessen Konstitution aufzufinden, wurde Cu²⁺ in oktaedrischer (Cu _x Mg _1–x TiO₃, Cu _x Cd _1–x TiO₃, Cu _x Mg _1–x CaSiO₄, Cu _x Mg _1–x CaGeO₄, Cu _x Mg _2–x SiO₄, Cu _x Mg _2–x GeO₄) und tetraedrischer Koordination (Cu _x Zn_2–x SiO₄, Cu _x Mg _1–x Cr₂O₄) spektralphotometrisch untersucht. Die Farbkurven besitzen mindestens 2 Absorptionsbanden (Kristallfeldbanden) im längerwelligen und eine oft gut ausgeprägte Elektronenübergangsbande (charge transfer) im kürzerwelligen Spektralbereich. In einigen Fällen ist noch eine zweite Elektronenübergangsbande als Schulter zu erkennen. Es wurden auch Cu-haltige 2,3- und 2,4-Spinelle spektralphotometrisch untersucht (Cu _x Mg _1–x Al₂O₄, Cu _x Mg _1–x Ga₂O₄, Cu _x Cd _y Zn _1–x–y Al₂O₄, Cu _x Mg _2–x SnO₄, Cu _x Mg _2–x TiO₄, Cu _x Zn _1–x MgTiO₄, Cu _x Mg _1–x Cd _y TiO₄). Es zeigte sich, daß Cu²⁺ immer auf Tetraeder- und Oktaederlücken verteilt ist. Eine Aufweitung des Wirtsgitters durch isomorphen Einbau größerer Kationen bewirkt nicht immer eine IR-Verschiebung der Banden, sondern in einigen Fällen (Spinellphasen) auch eine UV-Verschiebung. Eine Sonderstellung nimmt das ägyptisch-Blau CuCaSi₄O₁₀ ein, da hier das Cu²⁺ von 4 O_2– in planarer Anordnung umgeben ist. Die Farbkurve weist 3 Maxima auf im Einklang mit der Kristallfeldtheorie.

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In order to find out relations between the lightabsorption of bivalent copper isomorphously incorporated into an oxidic host lattice and the constitution of this lattice, the spectrum of Cu²⁺ has been investigated in octahedral (Cu _x Mg_1–x TiO₃, Cu _x Cd _1–x TiO₃, Cu _x Mg _1–x CaSiO₄, Cu _x Mg _1–x CaGeO₄, Cu _x Mg _2–x SiO₄, Cu _x Mg _2–x GeO₄) and tetrahedral coordination (Cu _x Zn _2–x SiO₄, Cu _x Mg _1–x Cr₂O₄). The colour curves show at least 2 absorption bands within the region of longer wave length and a charge transfer band often well developed in the range of shorter wavelength. In some cases also a second charge transfer band becomes conspicuous as a shoulder. Copper containing 2,3- and 2,4-spinels have been also investigated (Cu _x Mg _1–x Al₂O₄, Cu _x Mg _1–x Ga₂O₄, Cu _x Cd _y Zn _1–x–y Al₂O₄, Cu _x Mg _2–x SnO₄, Cu _x Mg _2–x TiO₄, Cu _x Zn _1–x MgTiO₄, Cu _x Mg _1–x Cd _y Zn _1–y TiO₄). From the colour curve one can infer that Cu²⁺ occupies in the spinels always tetrahedral as well as octahedral interstices. A widening of the lattice does not effect always a shifting of the absorption bands towards IR but in some cases (spinel phases) also the inverse shifting will occur. An exceptional case represents the egyptian blue CuCaSi₄O₁₀ since in this lattice the Cu₂₊ are surrounded by four O^2– in a coplanar arrangement. The colour curve shows three absorption bands in agreement with the crystal field theory.

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Mit 20 Abbildungen     

The Phase Relations in the System In2O3–TiO2–MgO at 1100 and 1350°C

The phase relations in the system In₂O₃–TiO₂–MgO at 1100 and 1350°C are determined by a classical quenching method. In this system, there are four pseudobinary compounds, In₂TiO₅, MgTi₂O₅ (pseudobrookite type), MgTiO₃ (ilmenite type), and Mg₂TiO₄ (spinel type) at 1100°C. At 1350°C, in addition to these compounds there exist a spinel-type solid solution Mg_2−xIn_2xTi_1−xO₄ (0≤x≤1) and a compound In₆Ti₆MgO₂₂ with lattice constants a=5.9236(7) Å, b=3.3862(4) Å, c=6.3609(7) Å, β=108.15(1)°, and q=0.369, which is isostructural with the monoclinic In₃Ti₂FeO₁₀ in the system In₂O₃–TiO₂–MgO. The relation between the lattice constants of the spinel phase and the composition nearly satisfies Vegard's law. In₆Ti₆MgO₂₂ extends a solid solution range to In₂₀Ti₁₇Mg₃O₆₇ with lattice constants of a=5.9230(5) Å, b=3.3823(3) Å, c=6.3698(6) Å, β=108.10(5)°, and q=0.360. The distributions of constituent cations in the solid solutions are discussed in terms of their ionic radius and site preference effect.     

The structure Tl3SbS3, Tl3SbSe3, Tl3SbS3−xSex, and Tl3SbyAs1−ySe3

The space group symmetry and crystal structure of Tl₃SbS_3−xSe_x compounds in the composition range 0 < x < 3 have been determined by a combination of powder X-ray diffraction, electron diffraction, and high-resolution electron microscopy. The incongruently melting compound Tl₃SbSe₃ has been shown to crystallize in cubic space group P2₁3 with a = 9.435Å in a structure related to that of Langbeinite. The convergent beam electron diffraction pattern of Tl₃SbS₃ is in accord with the space group R3m determined by X-ray diffraction. The cubic Langbeinite-type structure is found for Tl₃SbS_3−xSe_x for 0.5 < x < 3 and for Tl₃Sb_yAs_1−ySe₃ for 0.077 < y < 1.0. A five-component compound Tl₃Sb_0.5As_0.5Se_1.5S_1.5 was also found to be cubic.     

Thermoelectric properties of Cu-doped n-type (Bi2Te3)0.9–(Bi2−xCuxSe3)0.1(x=0–0.2) alloys

n-Type (Bi₂Te₃)_0.9–(Bi_2−xCu_xSe₃)_0.1 (x=0–0.2) alloys with Cu substitution for Bi were prepared by spark plasma-sintering technique and their structural and thermoelectric properties were evaluated. Rietveld analysis reveals that approximate 9.0% of Bi atomic sites are occupied by Cu atoms and less than 4.0 wt% second phase Cu_2.86Te₂ precipitated in the Cu-doped parent alloys. Measurements show that an introduction of a small amount of Cu (x0.1) can reduce the lattice thermal conductivity (κ_L), and improve the electrical conductivity and Seebeck coefficient. An optimal dimensionless figure of merit (ZT) value of 0.98 is obtained for x=0.1 at 417 K, which is obviously higher than those of Cu-free Bi₂Se_0.3Te_2.7 (ZT=0.66) and Ag-doped alloys (ZT=0.86) prepared by the same technologies.     

Tunneled Intergrowth Structures in the Ga2O3–In2O3–SnO2 System

The structures of several Ga₂O₃–In₂O₃–SnO₂ phases were investigated using high-resolution electron microscopy, X-ray diffraction, and Rietveld analysis of time-of-flight neutron diffraction data. The phases, expressed as Ga_4−4xIn_4xSn_n−4O_2n−2 (n=6 and 7–17, odd), are intergrowths between the β-gallia structure of (Ga,In)₂O₃ and the rutile structure of SnO₂. Samples prepared with n≥9 crystallize in C2/m and are isostructural with intergrowths in the Ga₂O₃–TiO₂ system. Samples prepared with n=6 and n=7 are members of an alternative intergrowth series that crystallizes in P2/m. Both intergrowth series are similar in that their members possess 1-D tunnels along the b axis. The difference between the two series is described in terms of different crystallographic shear plane operations (CSP) on the parent rutile structure.     

Formation of CdS x Se1−x microcrystals in sol-gel derived glasses

Sol-gel method was applied to prepare CdS _x Se_1–x microcrystals doped glasses. Gels were synthesized through the hydrolysis of Si(OC₂H₅)₄, CdSeO₄, and NH₄SCN, and then heated in H₂-N₂ gas atmosphere to precipitate CdS _x Se_1–x microcrystals in the glasses. The composition of crystals was preliminarily determined during the synthesis of the gels. The optical band gap energies were blue shifted compared with those of the bulk crystals due to the quantum-sized confinement effect.     

Die Systeme Nickel—Selen und Kobalt—Nickel-Selen

Zusammenfassung Das System Ni–Se wurde thermisch und röntgenographisch untersucht und aus den Resultaten und aus Literaturangaben das Phasendiagramm aufgestellt. Die Hochtemperaturphase -Ni₃Se₂ zersetzt sich peritektisch bei 785 °C, die Verbindung Ni₆Se₅ peritektoidisch bei 647,5 °C. Die B8-(NiAs-)Phase Ni_1–x Se hat einen kongruenten Schmelzpunkt bei 53,5 At% Se und 959 °C und eine maximale Phasenbreite von 50,5 At% Se (785 °C) bis 56,8 At% Se (856 °C). NiSe₂ zerfällt peritektisch bei 853 °C in Ni_1–x Se und eine Se-reiche Schmelze. In Schmelzen mit mehr als 68,0 At% Se tritt oberhalb 856 °C eine Mischungslücke auf. Röntgenographisch konnte die Existenz der vier Verbindungen -Ni₃Se₂, Ni₆Se₅, Ni_1–x Se und NiSe₂ bestätigt werden.Im Dreistoffsystem Co–Ni–Se wurden drei Schnitte untersucht. In den quasibinären Schnitten zwischen den B8-Phasen Ni_1–x Se und Co_1–x Se und zwischen den C2-Phasen NiSe₂ und CoSe₂ sind die Legierungen sowohl im flüssigen als auch im festen Zustand vollkommen mischbar. In beiden Schnitten fallen die Liquidus- und Solidustemperaturen kontinuierlich von der Co-zur Ni-Seite ab. Die ternäre Phase (Co_1–y Ni _y )₁₁Se₈ ist bei 400 °C zwischen 0,9>y>0,5 stabil.

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The systems nickel—selenium and cobalt—nickel—selenium. Transition metal-chalcogen systems, II Übergangsmetall-Chalkogensysteme, 2. Mitt.

The Ni–Se system was investigated by X-ray and thermal analyses and from the results and from published data the Ni–Se phase diagram was constructed. The high temperature phase -Ni₃Se₂ decomposes peritectically at 785°C, the compound Ni₆Se₅ peritectoidically at 647.5°C. The B8 (NiAs) phase Ni_1–x Se has a congruent melting point at 53.5 at% Se and 959°C and a maximum range of homogeneity between 50.5 at% Se (785 °C) and 56.8 at% Se (856 °C). NiSe₂ decomposes peritectically at 853 °C into Ni_1–x Se and a Se-rich melt. Melts with more than 68.0 at% Se exhibit above 856 °C a miscibility gap. X-ray investigations confirmed the existence of the four compounds -Ni₃Se₂, Ni₆Se₅, Ni1– xSe, and NiSe₂.Three sections of the ternary system Co–Ni–Se were investigated. Alloys of the quasibinary sections between the B8 phases Ni_1–x Se and Co_1–x Se and between the C2 phases NiSe₂ and CoSe₂ are completely miscible in the liquid as well as in the solid state. The liquidus and the solidus temperatures in these sections drop continuously from the Co-to the Ni-side of the diagram. The ternary phase (Co_1–y Ni _y )₁₁Se₈ is stable at 400 °C between 0.9<y<0.5.

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Mit 5 Abbildungen     

Extension of the misfit series to the mercury-based cobaltites

The exploration of the Hg–Sr/Ca–Co–O system using EDS and electron microscopy has shown the possibility to incorporate mercury and excess cobalt in the middle rock salt layer of the misfit cobaltite structure, leading to the new series [Hg_1−xCo_xSr_2−yCa_yO₃]^RS[CoO₂]_b1/b2 with 0.6x0.90, 0y2, and b₁/b₂ ranging from 1.63 to 1.79. These new composite oxides, built up from [CoO₂]_∞ layers of the CdI₂-type stacked with triple [Hg_1−xCo_xSr_2−yCa_yO₃]. rock salt layers are remarkable by their large thermopower S values similarly to the thallium and lead misfit cobaltites. More importantly, the S value is sensitive to the composition of the triple rock salt layer, increasing as the calcium content increases, so that an enhancement of the figure of merit of the pure calcium compound is expected.     

Synthesis and crystal structure analysis of Sr8Cu3In4N5 and Sr0.53Ba0.47CuN

Single crystals of new quaternary compounds Sr₈Cu₃In₄N₅ and Sr_0.53Ba_0.47CuN were prepared, respectively, from a Sr–Cu–In–Na melt under 7 MPa of N₂ and from a Sr–Ba–Cu–In–Na melt under 0.5 MPa of N₂ by slow cooling from 1023 to 823 K. The crystal structures were determined by single-crystal X-ray diffraction. Sr₈Cu₃In₄N₅ has an orthorhombic structure (space group, Immm, Z=2, a=3.8161(5) Å, b=12.437(2) Å, c=18.902(2) Å), and is isostructural with Ba₈Cu₃In₄N₅. It contains nitridocuprates of isolated units ⁰[CuN₂] and one-dimensional linear chains _∝¹[CuN_2/2] and one-dimensional indium clusters _∝¹[In₂In_2/2]. Sr_0.53Ba_0.47CuN crystallizes in an orthorhombic cell, space group Pbcm, Z=4, a=5.4763(7) Å, b=9.2274(12) Å, c=9.0772(12) Å. The structure contains infinite zig-zag chains _∝¹[CuN_2/2] which kink at every second nitrogen atom.     

Zur Existenz des Seandiummonoxides

Zusammenfassung Durch Reduktion von Sc₂O₃ mit Silicium oder Magnesium bildet sich ein Produkt mit B1-Typ und einer Gitterkonstantea=4,45 Å. Die früher bestimmten Gitterparameter im Bereich 4,48–4,54 Å gelten für Produkte, die etwas Kohlenstoff enthalten, d. h. für SxO_xC_y mitx=0,95–1,03 undy=0,03–0,05.

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Existence of scandium oxide

The reduction of Sc₂O₃ with silicon or magnesium yields a product of B1-type, lattice-constanta=4,45 Å. Lattice parameters, obtained before, at 4,48–4,54 Å are typical for substances containing some carbon, i.e. for ScO_xC_y, withx=0,95–1,03 andy=0,03–0,05.

     

Structure and magnetic properties of RE2CuIn3 (RE=Ce, Pr, Nd, Sm and Gd)

The ternary copper indides RE₂CuIn₃≡RECu_0.5In_1.5 (RE=Ce, Pr, Nd, Sm and Gd) were synthesized from the elements in sealed tantalum tubes in an induction furnace. They crystallize with the CaIn₂-type structure, space group P6₃/mmc, with a statistical occupancy of copper and indium on the tetrahedral substructure. These indides show homogeneity ranges RECu_xIn_2−x. Single crystal structure refinements were performed for five crystals: CeCu_0.66In_1.34 (a=479.90(7) pm, c=768.12(15) pm), PrCu_0.52In_1.48 (a=480.23(7) pm, c=759.23(15) pm), NdCu_0.53In_1.47 (a=477.51(7) pm, c=756.37(15) pm), SmCu_0.46In_1.54 (a=475.31(7) pm, c=744.77(15) pm), and GdCu_0.33In_1.67 (a=474.19(7), c=737.67(15) pm). Temperature-dependent susceptibility measurements show antiferromagnetic ordering at T_N=4.7 K for Pr₂CuIn₃ and Nd₂CuIn₃ and 15 K for Sm₂CuIn₃. Fitting of the susceptibility data of the samarium compound revealed an energy gap ΔE=39.7(7) K between the ground and the first excited levels.     

Dissociative chemistry of ionic transition metal cluster fragments

The ionic fragments formed by collision-induced dissociation of Mn₂(CO) _y ⁺ ions (y=1–10) are reported. The ratio of product ions formed by metal-metal vs. metal-ligand bond cleavage are discussed in terms of the dependence of the metal-metal bond energy on the metal-to-ligand ratio. The collision-induced dissociation data indicate that the metal-metal bond energy of Mn₂(CO) ₅ ⁺ and Mn₂(CO) ₁₀ ⁺ is less than that for Mn₂(CO) _y ⁺ (y=1–4 and 6–9). The product ions arising by metal-metal and metal-ligand bond cleavage reactions for collision-induced dissociation and photodissociation are compared. On the basis of this data and the known photochemistry/photophysics of Mn₂(CO)₁₀, it is proposed that the difference in collision-induced dissociation and photodissociation product ion branching ratios is attributable to spin-orbit transitions of the activated ions.     

Influence of partial substitution of zinc for copper on electronic structures of YBa2Cu3O y

Summary By use of an approximate band-structure treatment based on the EHMO approach, the energy band structures for the Zn-doped superconductor YBa₂Cu_3–x Zn _x O _y were calculated in the present paper and the influence of partial substitution of zinc for copper on the electronic structures for orthorhombic YBa₂Cu₃O_y was studied. From analysis of the band structures and the densities of states for YBa₂Cu_3–x Zn _x O _y , it was demonstrated that the 2D Cu-O planes in the Y-Ba-Cu-O superconducting system have a direct and dominant influence on superconductivity, whereas the role of the 1D Cu-O ribbons and the O(4) atoms is also of some importance.     

Electronic structures of superconductors YBa2Cu3−x M x O y (M=Sn,Ni)

Based on the EHMO approach, the energy band structures for superconductors YBa₂Cu_3–x Sn _x O _y (y>7) and YBa₂Cu_3–x Ni _x O_y (y<7) were calulated in the present paper. The influence of the cation doping at the Cu site in the unit cell and the oxygen content on their electronic structures was studied. The results showed that the cation doping at the Cu site resulted in the great decreases in the bandwidths of the broad anisotropic Cu-O bands and the densities of states. In YBa₂Cu_3–x Sn _x O _y , however, these decreases are compensated by the increase in the oxygen content caused by the Sn-doping, which results in a small change in the total densities of states. For YBa₂Cu_3–x Ni _x O _y , the effect of the doping on its electronic structures in dominant. The Ni-doping, therefore, results in a great change in the electronic structures. In addition, the study on the projected densities of states of the Ni-doped system revealed that the 2D Cu-O planes in the Y-Ba-Cu-O system played a dominant role in superconductivity.