Anomalous magnetization processes and non-symmetrical domain wall displacements in L10 FePt particulate films

Anomalous magnetization processes and non-symmetrical domain wall displacements in the minor loop of L1₀ FePt particulate films were investigated by magnetization measurements and in situ magnetic force microscopy. Magnetization (M) decreases dramatically on increasing the magnetic field to ∼3 kOe after which M becomes small and constant in the range of 5–20 kOe as observed in the successive measurement of minor loops. The domain wall displacement is non-symmetrical with respect to the field direction. The anomalous magnetization behavior was attributed to the non-symmetrical domain wall displacement and large magnetic field required for domain wall nucleation. Energy calculations from modeling suggest that non-symmetrical domain wall displacement is caused by the existence of metastable domains in which the domain edges are stuck to the particle boundaries.     

Magnetization processes in the narrow domain structures of amorphous ferromagnetic alloys

The magnetization processes within the narrow domain laminae of amorphous ferromagnetic alloys have been investigated by means of the magneto-optical Kerr effect. Changes of the domain width of the closure domains by a magnetic field applied perpendicular to the laminae have been determined for the alloys Fe₈₀B₂₀ and Fe₄₀Ni₄₀P₁₄B₆. These results are compared with theoretical calculations, assuming that wall displacements within the closure domains and rotations of the magnetization in the bulk domains take place simultaneously and a stray field free domain structure is developed. It turned out, that the closure domain structure on the surface of the sample vanishes at the same magnetic field where magnetic saturation is approached.     

Simulation of magnetization reversal processes in finite ferromagnets with defects

The magnetization and magnetization reversal processes that occur through the mechanism of incoherent rotation of magnetic moments in cubic ferromagnets with limited sizes are investigated theoretically. It is established that the appropriate model representation of magnetic inhomogeneities arising in the region of defects is provided by 0° domain walls. The influence of the external magnetic field on the structure and the stability region of the 0° domain walls is determined. This makes it possible to reveal the characteristic features of the magnetization reversal of real crystals as a function of the material and defect parameters, in particular, in the vicinity of the spin-reorientation phase transition.     

Domain wall dynamics studied by impedanciometry

The knowledge of the basic phenomena governing the magnetoimpedance (skin-depth effect) allows the use of the impedance spectrum to study the dynamic magnetization processes in magnetic materials. By modeling the frequency dependence of the impedance spectrum, the corresponding permeability spectrum can be obtained, from which it is possible to obtain several important parameters concerning the dynamics of the domain walls, namely: domain wall critical speed, wall mobility, domain wall energy and thickness. In this work the technique is outlined and applied to (1 1 0)[0 0 1]FeSi_3%, a very well-known sharp textured magnetic material. The results compare favorably to those known from the literature.     

Tb0.3Dy0.7Fe2合金磁畴偏转的滞回特性研究

研究了不同载荷作用下Tb_0.3Dy_0.7Fe₂合金在压磁和磁弹性效应中磁畴偏转的滞回特性. 基于Stoner-Wolhfarth模型的能量极小原理, 采用绘制自由能-磁畴偏转角度关系曲线的求解方法, 研究了压磁和磁弹性效应中载荷作用下的磁畴角度偏转和磁化过程, 计算分析了不同载荷作用下磁畴偏转的滞回特性. 研究表明, 压磁和磁弹性效应中磁畴偏转均存在明显的滞回、跃迁效应, 其中磁化强度的滞回效应来源于磁畴偏转的角度跃迁; 压磁效应中预加磁场的施加将增大磁化强度的滞回, 同时使滞回曲线向大压应力方向偏移; 磁弹性效应中磁畴偏转的滞回存在两个临界磁场强度, 不同磁场强度下合金具有不同的磁畴偏转路径和磁化滞回曲线, 临界磁场强度的大小取决于预压应力的施加. 理论分析对类磁致伸缩材料磁畴偏转模型的完善和材料器件的设计应用非常有意义.     

Accessing fast magnetization dynamics by XPEEM: Status and perspectives

Being already well established as a versatile technique for high-resolution static magnetic domain imaging, X-ray photoemission electron microscopy (XPEEM) is now also capturing the field of time-resolved magnetic investigations. Using appropriate operation modes at synchrotron radiation sources, a time resolution of 10 ps and less can be achieved in recent magnetodynamics studies, giving access even to phenomena involving precessional processes.     

Competition between domain walls and the reverse magnetization in the magnetic relaxation of a Pt/Co/Ir/Co/Pt spin switcher

A multilayer Pt/Co/Ir/Co/Pt/GaAs heterostructures demonstrates a long term (to several hours) magnetic relaxation between two stable states of the magnetization of the system. The magnetization reversal of the heterostructure layers occurs both due to the formation of nuclei of the reverse magnetization domains and as a result of their further growth by means of motion of domain walls. The competition between two these processes provides a nonexponential character of the magnetic relaxation. At 300 K, the contributions of these processes to the relaxation are commensurable, while, at temperatures lower than 200 K, the contribution of the nucleation is suppressed and the magnetic relaxation occurs as a result of motion of the domain walls.     

Magnetization reversal mechanisms in hybrid resin-bonded Nd–Fe–B magnets

The magnetic properties of isotropic epoxy resin-bonded magnets prepared by mixing a hard magnetic powder made from melt quenched Nd–Fe–Co–B ribbons and a soft magnetic iron powder have been examined. The magnetization reversal processes and the magnetic parameters have been studied by the measurement of the virgin magnetization curves, the major and minor hysteresis loops and sets of recoil curves. From these recoil curves the field dependence of the reversible and irreversible magnetization components during the magnetization and demagnetization processes has been derived. The remanence relationship was used to study the nature of magnetic interaction between the grains. A study of interaction domains was conducted using optical microscopy. Groups of domains, each over several grains, were observed. It was found that the reversal process in the samples investigated involves the rotation of magnetization vectors in the iron powder grains and pinning of domain walls at the MQP-B grain boundaries.     

Narrow domain wall propagation and metamagnetic properties of a Tb0.5Y0.5Ni single crystal

The non-collinear magnetic structure of Tb_0.5Y_0.5Ni shows a ferromagnetic component associated with an antiferromagnetic one. At very low temperatures the domain walls are narrow and frozen by the anisotropy. Magnetization processes studied on a spherical monocrystalline sample provide the experimental evidence that, when the anisotropy is strong enough, the narrow domain wall propagation as well as the metamagnetic process depends only on exchange interactions.     

Microscopic origin of asymmetric magnetization reversal of Co/Pt multilayers with perpendicular magnetic anisotropy

We have comprehensively investigated asymmetric magnetization reversal behaviors of (x-Å Co/7.7 Å Pt)₅ multilayers (x = 3.1 and 4.7) with perpendicular magnetic anisotropy. Our direct observation of magnetic domain structures by means of magneto-optical microscopy reveals that the asymmetry arises both from nucleation and wall-motion processes. An asymmetric nucleation behavior is observed, which could be originated from the preexisting non-reversed domains which might have a reproducible or random spatial distribution, controllable by tuning the field profile. An asymmetric wall-motion behavior stemming from asymmetric stripe domain evolution is also observed.     

Modern microwave magnetic materials: Recent advances and trends

In recent years, a large variety of microwave magnetic materials has been developed, with different compositions, shapes, and fabrication processes. The physics of the dynamic magnetic responses of these materials is very rich, due to the interplay between the intrinsic magnetic properties of the materials, the domain structure, and dynamic shape effects. These materials are associated to a variety of applications, some of them well-established, for direct interaction with rf waves; others corresponding to etablished uses of magnetic materials, but at higher speeds or higher frequencies; and some in association with hot topics in the magnetic or rf communities including metamaterials, nanoscale structures, and nonlinear devices.     

Reorientation,multidomain states and domain walls in diluted magnetic semiconductors

The competition between surface/interface and intrinsic anisotropies yields a number of specific reorientation effects and strongly influences magnetization processes in diluted magnetic semiconductors as (Ga,Mn)As and (In,Mn)As. We develop a phenomenological theory to describe reorientation transitions and the accompanying multidomain states applicable to layers of these magnetic semiconductors. It is shown that the magnetic phase diagrams of such systems include a region of four-phase domain structure with four adjoining areas of two-phase domains as well as several regions with coexisting metastable states. We demonstrate that the parameters of isolated domain walls in (Ga,Mn)As nanolayers are extremely sensitive to applied magnetic field and can vary in a broad range. This can be used in microdevices of magnetic semiconductors with pinned domain walls. For (Ga,Mn)As epilayers with perpendicular anisotropy the geometrical parameters of domains have been calculated.     

Magnetization processes in nanocrystalline ferromagnets

We have investigated the grain size dependence of the characteristic magnetic properties as the initial susceptibility, the coercivity and the Rayleigh constant of nanocrystalline Fe_73.5Cu₁Nb₃Si_13.5B₉. Before there is any significant change in the grain size all the magnetic properties change their values by several orders of magnitude due to a change of the magnetization process. At low annealing temperatures (small grains) we found irreversible domain wall movements which could be well described by the statistical potential theory. After higher annealing temperatures the magnetic properties changed drastically and the magnetization occurs by rotational processes. The strong decrease of the Rayleigh constant and the corresponding change in the magnetization process is attributed to increased pinning of domain walls due to the precipitation of crystalline Fe-B compounds.     

Evolution of Magnetic Domain Structure in a YIG Thin Film

The evolution of a magnetic domain structure induced by temperature and magnetic field is reported in silicondoped yttrium iron garnet(YIG) films with perpendicular anisotropy.During a cooling-down procedure from300 K to 7K,a 20%change in the domain width is observed,with the long tails of the stripes being shortened and the twisting stripes being straightened.Under the influence of the stray field of a barium ferrite,the garnet presents an interesting domain structure,which shows an appearance of branching protrusions.The intrinsic mechanisms in these two processes are also discussed.     

具有条纹磁畴结构的NiFe薄膜的制备与磁各向异性研究

具有条纹磁畴结构的磁性薄膜表现出面内转动磁各向异性,对于解决高频电子器件的方向性问题起着至关重要的作用.本文采用射频磁控溅射的方法,研究了NiFe薄膜的厚度、溅射功率密度、溅射气压等制备工艺参数对条纹磁畴结构、面内静态磁各向异性、面内转动磁各向异性、垂直磁各向异性的影响规律.研究发现,在功率密度15.6 W/cm~2与溅射气压2 mTorr(1 Torr=1.33322×102Pa)下生长的NiFe薄膜,表现出条纹磁畴的临界厚度在250 nm到300 nm之间.厚度为300 nm的薄膜比250 nm薄膜的垂直磁各向异性场增大近一倍,从而磁矩偏离膜面形成条纹磁畴结构,并表现出面内转动磁各向异性.高溅射功率密度可以降低薄膜出现条纹磁畴的临界厚度.在相同功率密度15.6 W/cm~2下生长300 nm的NiFe薄膜,随着溅射气压由2 mTorr增大到9 mTorr,NiFe薄膜的垂直磁各向异性场逐渐由1247.8 Oe(1 Oe=79.5775 A/m)增大到3248.0 Oe,面内转动磁各向异性场由72.5 Oe增大到141.9 Oe,条纹磁畴周期从0.53μm单调减小到0.24μm.NiFe薄膜的断面结构表明柱状晶的形成是表现出条纹磁畴结构的本质原因,高功率密度下低溅射气压有利于柱状晶结构的形成,表现出规整的条纹磁畴结构,高溅射气压会导致柱状晶纤细化,面内转动磁各向异性与面外垂直磁各向异性增强,条纹磁畴结构变得混乱.     

Effect of stabilization processes on NMR signals from 180° domain boundaries in cubic ferrite-garnet crystals

Numerical methods were used to study the effect of stabilization processes on the line shape of NMR signals from 180° domain walls in cubic ferrite-garnet crystals, taking into account the structural change of the boundaries as they shift quasistatically in a magnetic field. The dependences of the amplitude of absorption maxima on the induced anisotropy constants and the amplitude of the external magnetic field are analyzed. Fiz. Tverd. Tela (St. Petersburg) 40, 694–698 (April 1998)     

Effect of thermomagnetic processing on magnetic properties of iron and iron-silicon alloys

Results of experimental studies of the effect of cooling iron and iron-silicon alloys in a magnetic field on their magnetic properties are presented. It is shown that the magnetic properties are improved and are dependent on the prehistory of the materials and the temperature from which cooling in the field is commenced. Thermomagnetic processing creates a state within the material in which there is no stabilization of ferromagnetic domain boundaries and the contribution of irreversible shifting processes to magnetization is reduced signifcantly.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 41–46, November, 1982.     

Magnetic noise as the cause of the spontaneous magnetization reversal of RE–TM–B permanent magnets

The relation between the macroscopic spontaneous magnetization reversal (magnetic viscosity) of (NdDySm)(FeCo)B alloys and the spectral characteristics of magnetic noise, which is caused by the random microscopic processes of thermally activated domain wall motion in a potential landscape with uniformly distributed potential barrier heights, is found.     

Temperature dependence of magnetic stripe domain period in ultrathin films

In ultrathin films, due to the thermal activation and temperature dependencies of the magnetic parameters, magnetization reversal processes are strongly affected by thermal effects. We analyze changes of domain periods of ultrathin cobalt and L₁₀$\mathrm{L}{1}_0$ films in a wide temperature range. With regard to the temperature dependencies of the film magnetic parameters we calculate the equilibrium stripe period as a function of temperature. It is shown that on film heating the equilibrium domain structure (DS) period decreases and at the reorientation phase transition (RPT) approaches its minimal value corresponding to the temperature independent period of the sinusoidal domain structure. Just below the RPT temperature (or thickness) the stripe domain period was found to exponentially decrease with temperature. Irreversible temperature changes of the domain period affected by coercivity are also discussed.     

Magnetization reversal asymmetry in Fe/MgO(0 0 1) thin films

We study the in-plane magnetization process in 200 Å Fe(0 0 1) thin films grown by sputtering at normal incidence. In spite of this growth geometry, a small uniaxial in plane magnetic anisotropy, whose origin is not totally understood, is found superimposed to the expected cubic biaxial one. This has a dramatic effect both on the reversal process and the domain structure. A combined longitudinal and transversal Kerr study shows the different switching processes (180° walls along the main easy axis versus 90° along the secondary easy axis) depending on the relative orientation of the magnetic field with respect to the Fe crystallographic axes. Remarkably, this two- and sometimes three-step switching process appears only when the field is applied along certain crystallographic directions. These findings are corroborated by domain observations.