电化学刻蚀法制备LaB6场发射微尖锥阵列

采用电化学刻蚀方法,成功制备出单尖的六硼化镧、钼、钨及钨铼合金场发射冷阴极尖锥,并对这几种场发射单尖锥阴极的电子发射性能进行了测试比较.结果表明,LaB₆作为场发射阴极,具有良好的发射性能和稳定性.在〈111〉面单晶LaB₆基片上,用PECVD法沉积非晶硅作掩膜,制备出具有一定高度的LaB₆微尖锥场发射阵列,结果发现,LaB₆基底较为平整,尖锥阵列呈现出各向异性.该结论对LaB₆材料在场发射阴极方面的进一步研究具有重要的指导意义.     

放电等离子烧结原位合成LaxCe1-xB6化合物及性能研究

以LaH₂, CeH₂纳米粉和无定形B粉为原料, 通过放电等离子烧结原位合成法制备了单相、高致密度的La_xCe_1-xB₆稀土六硼化物. 系统研究了该系列化合物的晶体结构、表面织构、力学性能、电输运特性及热发射性能. 结果表明, 该方法制备出的样品致密度均高于96%, 维氏硬度最高值达到2310 kg/mm², 说明具有良好的力学性能. 热发射结果表明, 当阴极温度为1873 K, 外加电压为1 kV时, La_0.6Ce_0.4B₆的最大发射电流密度达到40.7 A/cm², 该值高于单纯LaB₆和CeB₆电流密度值. 因此, La_xCe_1-xB₆多元稀土六硼化物作为热阴极材料将有良好的应用前景. 关键词： 稀土六硼化物 阴极材料 热电子发射     

典型二元单晶REB6的电子结构和发射性能

二元单晶稀土六硼化物(REB₆)具有丰富的物理性质,其中单晶LaB₆具有优异的电子发射特性,影响二元REB₆发射性能的物理机理及其他二元REB₆是否具有良好的发射特性,需要进一步研究.本文采用基于密度泛函理论的第一性原理计算对典型二元单晶REB₆(RE=La,Ce,Pr,Nd,Sm,Gd)的电子结构、功函数进行了理论分析,并对区熔法制备的高质量单晶REB₆的热发射性能进行测试.电子结构计算结果表明,二元REB₆费米能级附近具有很高的态密度,宽域分布的稀土元素的d电子决定了REB₆优异发射性能的电子态,局域分布的f轨道对发射性能不利.功函数理论计算表明具有d态价电子的二元REB₆(RE=La,Ce,Gd)具有较低功函数.热发射测试结果表明,以上单晶REB₆ (100)晶面功函数热发射测试值与理论计算值基本相符.最终理论计算结合实验结果表明, LaB₆...     

碳纳米管阴极的强流脉冲发射性能研究

采用丝网印刷和涂敷方法制备了两种碳纳米管阴极，并研究了两种阴极的强流脉冲发射特性，表征了阴极表面碳纳米管的形貌及分布.研究结果表明在脉冲宽度为100 ns、电压为1.64×10⁶ V的脉冲电场下，涂敷法制备阴极的场发射电流最高达5.11 kA，最高发射电流密度达260 A/cm².丝网印刷法制备阴极的场发射稳定性优于涂敷法制备阴极，但其发射电流低.阴极表面发射体的形貌与分布影响了阴极的脉冲发射性能.碳纳米管阴极的脉冲发射机理为爆炸电子发射.碳纳米管阴极可以作为强 关键词： 碳纳米管 阴极 脉冲发射 强电流     

单晶LaB_6阴极材料典型晶面的电子结构和发射性能研究

单晶LaB_6是一种理想的热发射和场发射阴极材料,其不同晶面表现出不同的发射性能.采用基于密度泛函理论的第一性原理计算分析了LaB_6单晶的(100),(110),(111),(210),(211)和(310)典型晶面的差分电子密度、能带结构和态密度,并对光学区熔法制备的高质量单晶LaB_6的上述典型晶面的热发射性能进行了测试.理论计算结果表明LaB_6各晶面结构的不同和电子结构的差异导致LaB_6发射性能具有各向异性,晶面内La原子的密度越大、费米能级进入导带越深、费米能级附近态密度越大及其在导带区域的分布宽度越宽、导带在费米能级附近分布越多,晶面的逸出功越低,发射性能越好.热发射测试结果表明,当阴极测试温度为1773 K,测试电压为1 k V时,(100),(110),(111),(210),(211)和(310)晶面的最大发射电流密度分别为42.4,36.4,18.4,32.5,30.5和32.2 A/cm~2,其中(100)晶面具有最佳的发射性能.     

Gd3+/Y3+共掺对Nd:CaF2晶体光谱性能的影响

通过坩埚下降法生长了系列共掺Nd,Gd:CaF₂和Nd,Y:CaF₂晶体, 研究了Gd³⁺/Y³⁺共掺对Nd³⁺光谱性能以及Nd:CaF₂晶体晶胞参数的影响规律. 对于0.5 at.%Nd, x at.%Gd(x=2,5,8,10):CaF₂系列晶体, 当调控Gd³⁺掺杂浓度为2 at.%时, 具有最大的荧光寿命499 μs; 当Gd³⁺掺杂浓度为5 at.%时, 具有最大的吸收截面1.47×10^-20 cm², 最大的发射截面1.9×10^-20 cm²; 当Gd³⁺掺杂浓度为8 at.%时, 具有最佳的发射带宽29.03 nm. 对于0.6 at.%Nd, xat.%Y(x=2, 5, 8, 10):CaF₂系列晶体, Y³⁺掺杂浓度为5 at.%时, 有最大的吸收截面2.41×10^-20 cm², 最大的发射截面3.17×10^-20 cm²; 当Y³⁺掺杂浓度为10 at.%时, 具有最长的荧光寿命359.4 μs,并且具有最大发射带宽26 nm.     

合成温度和N2/O2流量比对碳纤维衬底上生长的SnO2纳米线形貌及场发射性能影响

采用化学气相沉积法系统研究了合成温度和N₂/O₂流量对生长在碳纤维衬底上的SnO₂纳米线形貌及场发射性能的影响规律. 利用扫描电镜(SEM)、透射电镜(TEM), X射线衍射(XRD)及能谱仪(EDS)对产物细致表征, 结果表明, SnO₂纳米线长径比随反应温度的升高而增大; 随N₂/O₂流量比值的增大先增大后变小, 场发射测试表明, 合成温度780 ℃, N₂/O₂流量比为300 : 3 时SnO₂纳米线阵列具有最佳的场发射性能, 开启电场为1.03 V/μm, 场强增加到1.68 V/μm时, 发射电流密度达0.66 mA/cm², 亮度约2300 cd/m².     

ZnO纳米棒的低温溶液法制备、光电特性研究及其在有机/无机复合电致发光中的应用

利用水热法制备了垂直于衬底的定向生长的ZnO纳米棒,利用扫描电子显微镜及光致发光的方法对其形貌及光学特性进行了表征,利用场发射性能测试装置对ZnO纳米棒的场发射性能进行了测试.结果表明:利用水热法在较低的温度(95 ℃) 下生长了具有较好形貌和结构的ZnO纳米棒,并表现出了较好的场发射特性,当电流密度为1 μA/cm²时,开启电场是2.8 V/μm,当电场为6.4 V/μm时,电流密度可以达到0.67 mA/cm²,场增强因子为3360.稳定性测试表明,在5 h内,4.5 V/μm的电场下,其波动不超过25%.将制备的ZnO纳米棒应用到有机/无机电致发光中,其中ZnO纳米棒为电子传输层,m-MTDATA(4,4',4″-tris{N,(3-methylphenyl)-N-phenylamino}-triphenylamine) 为空穴传输层,得到了ZnO的342 nm的紫外电致发光,此发光较ZnO纳米棒光致发光的紫外发射有约40 nm的蓝移. 关键词： ZnO纳米棒 场发射 水热法 有机/无机复合电致发光     

InN纳米线的低压化学气相沉积及其场发射特性研究

利用低压化学气相沉积方法在以Au作催化剂的Si衬底上生长了InN纳米线. 扫描电子显微镜分析表明，这些纳米线的直径在60—100 nm的范围内, 而其长度大于1 μm.高分辨透射电子显微镜图像表明，合成的纳米线中含有六方相和立方相的InN晶体.这些InN纳米线具有良好的场发射特性和稳定的场发射电流，其开启场为10.02 V/μm(电流密度为10 μA/cm²)，在24 V/μm 的电场下，其电流密度达到5.5 mA/cm².此外，对InN纳米线的场发射机理也进行了讨论. 关键词： InN纳米线 场电子发射 非线性Fower-Nordheim曲线     

单晶CeB_6发射性能及磁电阻各向异性研究

采用X射线劳厄定向法对单晶CeB_6的(110),(111),(210)和(310)晶面进行了定向.系统研究了不同晶面热发射性能及磁场对电阻率的影响规律.结果表明,当阴极温度为1873 K时(110),(111),(210)和(310)晶面最大发射电流密度分别为38.4,11.54,50.4和20.8 A/cm~2,表现出了发射性能的"各向异性".RichardsonDushman公式计算逸出功结果表明,上述晶面中(210)晶面具有最低的逸出功,为2.4 eV.从实际应用来看,该晶面有望替代商业化的钨灯丝成为新一代的场发射阴极材料.磁电阻率测量结果显示,当晶体从[001]方向旋转至[011]方向时电阻率从73μ?·cm变化至69μ?·cm,表明电阻率在磁场中沿不同方向同样具有"各向异性"的特点.     

Enhanced field emission from LaB6 thin films with nanoprotrusions grown by pulsed laser deposition on Zr foil

Lanthanum hexaboride (LaB₆) films have been deposited on a zirconium foil by pulsed laser deposition method. The field emission studies of the LaB₆ deposited film have been performed in the planar diode configuration under ultra high vacuum conditions. The Fowler-Nordheim plots were found to be linear in accordance with the quantum mechanical tunneling phenomenon. A typical field emission current of 7.02 μA was drawn at an applied electric field of 2 V/μm. The field enhancement factor is calculated to be 8913 cm⁻¹, indicating that the field emission is from nanoscale protrusions present on the emitter surface. The atomic force microscope (AFM) investigation of the surface clearly shows the conical shaped nanoprotrusions of few hundred nanometers with asperities of 20-40 nm on its top. The emission current-time plot recorded at the pre-set value of emission current of 5 μA over a period of more than 3 h exhibits an initial increase and subsequent stabilization of the current. The results reveal that the LaB₆/Zr field emitter obtained by the pulsed laser deposition (PLD) is a promising cathode material for practical applications in field emission-based devices.     

Synthesis, thermionic emission and magnetic properties of (NdxGd1-x)B6

Polycrystalline rare-earth hexaborides(NdxGd1-x)B6(x = 0,0.2,0.6,0.8,1) were prepared by the reactive spark plasma sintering(SPS) method using mixed powder of GdH2,NdH2 and B.The effects of Nd doping on the crystal structure,the grain orientation,the thermionic emission and the magnetic properties of the hexaboride were investigated by X-ray diffraction,electron backscattered diffraction and magnetic measurements.It is found that all the samples sintered by the SPS method exhibit high densities(> 95%) and high values of Vickers hardness(2319 kg/mm2).The values are much higher than those obtained in the traditional method.With the increase of Nd content,the thermionic emission current density increases from 11 to 16.30 A/cm2 and the magnetic phase transition temperature increases from 5.85 to 7.95 K.Thus,the SPS technique is a suitable method to synthesize the dense rare-earth hexaborides with excellent properties.     

Synthesis and characterization of LaB6 thin films on tungsten, rhenium, silicon and other substrates and their investigations as?field emitters

The paper deals with the comparative study of nanocrystalline Lanthanum hexaboride (LaB₆) thin films grown on various substrates by Pulsed laser deposition and Arc plasma method. Field emission studies were carried out on LaB₆ films deposited on various substrates show metallic behavior of the emitters. The high value of field enhancement factors, indicating that the electron emission from LaB₆ nanoscale protrusions deposited on emitter surface. The post field emission surface morphology of the emitters showed no significant erosion of the films during continuous operation. The observed behavior indicates that it is linked with the growth of LaB₆ films on substrate crystal structure. The LaB₆ nanocrystallites/nanowires films were synthesized using arc plasma method shows good emission current stability. The LaB₆ micro/nanocrystallites were also obtained by picosecond laser irradiation which gives high enhancement β factor, and good emission current stability along with high current density. The results reveal that nanocrystalline LaB₆ films, exhibit high resistance to ion bombardment and excellent structural stability and are more promising emitters for practical applications in field emission based new generation devices.     

Synthesis of LaB6 micro/nano structures using picosecond (Nd:YAG) laser and its field emission investigations

Micro/nano structures have been obtained by laser surface treatment on sintered LaB₆ pellets employing a picosecond pulsed Nd:YAG laser at a pressure of ∼1×10⁻³ mbar. The X-ray diffraction pattern of the laser treated pellet shows a set of well defined diffraction peaks, indexed to the cubic phase of LaB₆ only. The scanning electron microscope studies reveal formation of micro and nano structures upon laser treatment and the resultant surface morphology is found to be strongly influenced by the laser fluence. Field electron emission studies made on the LaB₆ pellet, treated with optimized laser fluence, have been performed in a planar diode configuration under ultra high vacuum conditions. The threshold field required to draw an emission current density of ∼10 μA/cm² has been found to be ∼2.3 V/μm and a current density of ∼530 μA/cm² has been drawn at an applied field of 5.2 V/μm. The Fowler-Nordheim plot is found to be linear in accordance with the quantum mechanical tunneling phenomenon, confirming the metallic nature of the emitter. The emission current at the pre-set value ∼10 μA shows very good stability over a period of more than 3 hours. The present results emphasize the effectiveness of a picosecond laser treatment towards fabrication of a nano metric LaB₆ emitter for high current density applications.     

Field emission investigations of RuO2-doped SnO2 wires

Field emission studies of a bunch and a single isolated RuO₂:SnO₂ wire have been performed. A current density of 5.73 × 10⁴ A/cm² is drawn from the single wire emitter at an applied field of 8.46 × 10⁴ V/μm. Nonlinearity in the Fowler-Nordheim (F-N) plot has been observed and explained on the basis of electron emission from both the conduction and the valence bands of the semiconductor. The current stability recorded at the preset value of 1.5 μA is observed to be good. Overall the high emission current density, good stability and mechanically robust nature of the RuO₂:SnO₂ wires offer advantages as field emitters for many potential applications.     

类富勒烯纳米晶CNx薄膜及其场致电子发射特性

利用微波等离子体增强化学气相沉积技术制备出了CN_x薄膜,并利用x射线光电子能谱、x射线衍射、扫描电子显微镜和Raman光谱等测试手段对所制备的CN_x薄膜的微结构和成分进行了分析.研究了其场致电子发射特性.发现薄膜的结构和场发射特性与反应系中的甲烷、氮气及氢气的流量比有关,当甲烷、氢气及氮气流量比为8/50/50 sccm时,制备的薄膜具有弯曲层状的纳米石墨晶体结构（类富勒烯结构）和很好的场发射特性.场发射阈值电场降低至1.1V/μm.当电场为5.9V/μm时,平 关键词： 类富勒烯 x薄膜')" href="#">CN_x薄膜 场致电子发射 微波等离子体增强化学气相沉积     

Boron 10B—11B Isotope Substitution as a Probe of the Mechanism Responsible for the Record Thermionic Emission in LaB6 with the Jahn—Teller Instability1

We have tested the conduction band electrons of lanthanum hexaboride that is among the most effective electron-beam sources with one of the highest brightness of thermionic emission. We performed infrared spectroscopic, DC (direct current) resistivity and Hall-effect studies of LaB₆ single crystals with various ¹⁰B and ¹¹B isotope contents. We find that only a small amount of conduction electrons behave as Drude-type charge carriers while about 70% of the electrons are involved in collective oscillations of electron density coupled to vibrations of both the Jahn-Teller unstable rigid boron cage and rattling modes of La-ions loosely bound to the lattice. We suggest that exactly these non-equilibrium conduction electrons determine the extraordinary low work function of thermoemission in LaB₆.

     

Enhanced field emission from PbTiO3 nanodots prepared by phase separation approach

Uniformly distributed PbTiO₃ nanodots were successfully prepared by phase separation approach. A precursor sol film was first spin-coated on Si wafer and then spontaneously separated into two distinct phases owing to the Marangoni instability. PT nanodots with tailorable size and density were obtained after further heat treatment. X-ray diffraction analysis indicated that these nanodots showed a perovskite structure. An excellent room temperature field emission property of PbTiO₃ nanodots was observed: the minimum turn-on voltage was about 5.3 V/μm; while the emission current density reached about 270 μA cm⁻² at an applied field of about 9.25 V/μm.