高温超导体霍尔电阻和霍尔角在涡旋玻璃相变附近的普适标度律及统一霍尔电阻方程

发现了一个钉扎效应影响霍尔电阻ρ_xy和霍尔角θ_H的普适标度律. 同时,根据纵向电阻ρ_xx的扩展幂律形式和对霍尔电导σ_xy的微观分析,给出了一个对有一次或多次霍尔反号的高温超导体都适用的霍尔电阻方程. 关键词： 高温超导体 涡旋玻璃相变 普适标度律 霍尔电阻方程     

高平均功率FEL的标度律

讨论了设计高平均功率康普顿型自由电子激光（FEL）装置的基本思路与相关的标度律。强调了除电子束平均流强外,能量抽取率是装置实现高平均功率的决定性因素。这个量的标度律基本上由摇摆器参数（周期数）单独确定,与摇摆器周期长度和强度无关,与激光波长无关。指出如无能量回收系统,按目前光阴极电子枪+超导射频加速结构装置可预期的电子束团100 pC/bunch,平均电流为mA情况下,15MeV电子束能给出的激光平均输出功率为百瓦量级。     

高平均功率FEL的标度律

 讨论了设计高平均功率康普顿型自由电子激光（FEL）装置的基本思路与相关的标度律。强调了除电子束平均流强外，能量抽取率是装置实现高平均功率的决定性因素。这个量的标度律基本上由摇摆器参数（周期数）单独确定，与摇摆器周期长度和强度无关，与激光波长无关。指出如无能量回收系统，按目前光阴极电子枪+超导射频加速结构装置可预期的电子束团100 pC/bunch，平均电流为mA情况下，15MeV电子束能给出的激光平均输出功率为百瓦量级。     

高温超导体反常霍尔效应的标度行为

报道了高温超导体中钉扎影响霍尔电阻ρxy和霍尔角θH的普适标度律.这组标度律可以被多种不同的高温超导体的实验数据所验证.同时,根据已经得到的扩展幂律形式的纵向电阻ρxx以及霍尔电阻ρxy的表达式,推导出了这组标度律.     

超临界圆映象的混沌测度及其标度律

本文研究了圆映象中的参数k>1与k》1情况的混沌运动的行为,用在Ω轴的等分点上计算李雅普诺夫指数及转数的办法,给出混沌运动的测度及其标度律。 关键词：     

石墨烯：一种新的量子材料

石墨烯是一种仅由碳原子构成的二维材料.由于其独特的二维六角蜂窝状的晶格结构、载流子的狄拉克费米子行为及其他奇妙的物理特性,近些年来引起了人们的广泛关注.同时,它还展现出在电子、信息、能源等多个领域的巨大应用前景.曼彻斯特大学的安德烈.海姆（A.K.Geim）和康斯坦丁.诺沃肖洛夫（K.S.Novoselov）因其在石墨烯制备和研究方面的开创性工作获得了2010年的诺贝尔物理学奖.     

Levy-Kolmogorov湍流标度律

Kolmogorov的5／3次方律E（k）=Cε^2/3k^-5/3矿乃是20世纪湍流研究最重要的理论研究成果。这里E代表湍流能谱，占为湍流能量耗散率，k为波数，C为一常量。在极高雷诺数流动中-5／3次方律被很多实测数据验证。但是对于有限雷诺数问题，湍流能谱具有-5／3次方律的波数范围一般很窄；湍流实验证实，瞬时湍动能耗散存在时空分布极不均匀的情况，即所谓的间歇性现象，湍流物理量呈明显的非高斯分布，     

V型阵发李雅普诺夫指数标度律的验证

报道在一个张弛振荡电路中获得的V型阵发李雅普诺夫指数标度律的实验证据.对这个电路的理论模型进行了数值计算，所得结果与实验一致. 关键词：     

基于真实气体效应的湍流标度律特性

在量热完全气体、热完全气体和化学反应完全气体等3种气体模型假设下,利用Mach数为4.05、壁温为1 300 K的超声速槽道湍流的直接数值模拟（direct numerical simulation,DNS）结果,对标度律和自相似性做了详细分析.结果表明,不仅在量热完全气体模型下存在标度律和扩展自相似性,而且在热完全气体和化学反应完全气体模型下标度律和扩展自相似性仍然成立.压缩性的影响使得速度结构函数通过Favre平均获得更为合适.与热完全气体模型的结果相比,化学反应完全气体和量热完全气体模型的结果吻合更好.      

量子霍尔电阻计量技术的应用与分析

目前国际公认精度最高的现代电阻计量技术是量子霍尔电阻计量技术,但是其量子化、非连续特性使它在实际计量应用中受到很多限制。本文围绕先进的电阻比较与计量技术进行分类对比与分析,同时为实现10E-8量级相对不确定度的电阻溯源给出可行的技术方案。最后,针对不同方案给出分析结论,为相关计量实验室根据自身条件建立高精度电阻计量标准提供重要参考。     

Integer quantum Hall effect in Kekulé-patterned graphene

Y-shaped Kekulébond textures in a honeycomb lattice on a graphene-copper superlattice have recently been experimentally revealed.In this paper,the effects of such a bond modulation on the transport coefficients of Kekulé-patterned graphene are investigated in the presence of a perpendicular magnetic field.Analytical expressions are derived for the Hall and longitudinal conductivities using the Kubo formula.It is found that the Y-shaped Kekulébond texture lifts the valley degeneracy of all Landau levels except that of the zero mode,leading to additional plateaus in the Hall conductivity accompanied by a split of the corresponding peaks in the longitudinal conductivity.Consequently,the Hall conductivity is quantized as±ne²/h for n=2,4,6,8,10,...,excluding some plateaus that disappear due to the complete overlap of the Landau levels of different cones.These results also suggest that DC Hall conductivity measurements will allow us to determine the Kekulébond texture amplitude.     

Quantum spin Hall and quantum valley Hall effects in trilayer graphene and their topological structures

The present study pertains to the trilayer graphene in the presence of spin orbit coupling to probe the quantum spin/valley Hall effect. The spin Chern-number C_s for energy-bands of trilayer graphene having the essence of intrinsic spin–orbit coupling is analytically calculated. We find that for each valley and spin, C_s is three times larger in trilayer graphene as compared to single layer graphene. Since the spin Chern-number corresponds to the number of edge states,consequently the trilayer graphene has edge states, three times more in comparison to single layer graphene. We also study the trilayer graphene in the presence of both electric-field and intrinsic spin–orbit coupling and investigate that the trilayer graphene goes through a phase transition from a quantum spin Hall state to a quantum valley Hall state when the strength of the electric field exceeds the intrinsic spin coupling strength. The robustness of the associated topological bulk-state of the trilayer graphene is evaluated by adding various perturbations such as Rashba spin–orbit(RSO) interaction αR, and exchange-magnetization M. In addition, we consider a theoretical model, where only one of the outer layers in trilayer graphene has the essence of intrinsic spin–orbit coupling, while the other two layers have zero intrinsic spin–orbit coupling.Although the first Chern number is non-zero for individual valleys of trilayer graphene in this model, however, we find that the system cannot be regarded as a topological insulator because the system as a whole is not gaped.     

锯齿型石墨烯纳米窄带中量子霍尔体系的电场调控

应用含自洽格点在位库仑作用的Kane-Mele模型,研究锯齿型石墨烯纳米窄带平面内横向电场对边界带能带结构和量子自旋霍尔(QSH)体系的影响.研究结果显示,当电场强度较弱时,外加电场的方向可以调控自旋向下的两个边界带一起朝不同方向移动,导致波矢q=0.5处自旋向下的两个纯边界态的能量简并劈裂方向可由电场调控;当电场强度进一步增强到超过0.69 V/nm,自旋向下的两个边界带出现较大带隙,能带反转,而自旋向上的电子结构无能隙,系统呈现半金属性,同时QSH体系不再是B类.特别当电场强度为1.17 V/nm时,在自旋向下能带的能隙中,q=0.5处存在自旋向上的纯边界态,意味着在8格点边界处可以产生自旋向上的纯边界电流.当电场强度持续增加时,QSH系统从B类到C类经历3个阶段的变化.当电场强度超过1.42 V/nm后,自旋向上的两个边界带也出现能带反转,分别成为导带和价带,系统成为C类的普通量子霍尔体系.     

铁磁石墨烯体系的CT不变量子自旋霍尔效应

文章作者在垂直磁场作用下的铁磁石墨烯体系里预言了一种新类型的量子自旋霍尔效应.这量子自旋霍尔效应与自旋轨道耦合无关,体系也不具有时间反演不变性;但是有CT不变（C为电子-空穴变换、T为时间反演变换）.由于量子自旋霍尔效应,体系的纵向电阻和自旋霍尔阻出现量子化平台.特别是,自旋霍尔阻的量子化平台有很强的抗杂质干扰能力.     

Mesoscopic effects in the quantum Hall regime

We report results of a study of (integer) quantum Hall transitions in a single or multiple Landau levels for non-interacting electrons in disordered two-dimensional systems, obtained by projecting a tight-binding Hamiltonian to the corresponding magnetic subbands. In finite-size systems, we find that mesoscopic effects often dominate, leading to apparent non-universal scaling behavior in higher Landau levels. This is because localization length, which grows exponentially with Landau level index, exceeds the system sizes amenable to the numerical study at present. When band mixing between multiple Landau levels is present, mesoscopic effects cause a crossover from a sequence of quantum Hall transitions for weak disorder to classical behavior for strong disorder. This behavior may be of relevance to experimentally observed transitions between quantum Hall states and the insulating phase at low magnetic fields.     

Scaling and universality of integer quantum Hall plateau-to-plateau transitions

We have investigated the integer quantum Hall plateau-to-plateau transition in two-dimensional electrons confined to AlxGa(1-x)As-Al0.33Ga0.67As heterostructures over a broad range of Al concentration x. For x between 0.65% and 1.6%, where the dominant contribution to disorder is from the short-range alloy potential fluctuations, we observe a perfect power-law scaling in the temperature range from 30 mK to 1 K with a critical exponent kappa = 0.42 +/- 0.01.     

Quantum anomalous Hall effect and giant Rashba spin-orbit splitting in graphene system co-doped with boron and 5d transition-metal atoms

Quantum anomalous Hall effect (QAHE) is a fundamental quantum transport phenomenon in condensed matter physics. Until now, the QAHE has only been experimentally realized for Cr/V-doped (Bi, Sb)₂Te₃ but at an extremely low observational temperature, thereby limiting its potential application in dissipationless quantum electronics. By employing first-principles calculations, we study the electronic structures of graphene co-doped with 5d transition metal and boron atoms based on a compensated n–p co-doping scheme. Our findings are as follows: i) The electrostatic attraction between the n- and p-type dopants effectively enhances the adsorption of metal adatoms and suppresses their undesirable clustering. ii) Hf-B and Os-B co-doped graphene systems can establish long-range ferromagnetic order and open larger nontrivial band gaps because of the stronger spin-orbit coupling with the non-vanishing Berry curvatures to host the high-temperature QAHE. iii) The calculated Rashba splitting energies in Re–B and Pt–B co-doped graphene systems can reach up to 158 and 85 meV, respectively, which are several orders of magnitude higher than the reported intrinsic spin-orbit coupling strength.     

高性能石墨烯霍尔传感器

本文回顾了石墨烯霍尔传感器的相关研究工作.通过改善石墨烯生长转移和霍尔元件的微加工工艺,石墨烯霍尔元件和霍尔集成电路都展示出超越传统霍尔传感器的优异性能.石墨烯霍尔元件的灵敏度、分辨率、线性度和温度稳定性等重要指标都优于传统商用霍尔元件.通过开发一套钝化工艺,霍尔元件的稳定性有了明显提升.结合石墨烯材料的特点,展示了石墨烯在柔性磁传感和多功能传感领域的新颖应用.此外,成功实现了石墨烯/硅互补型金属-氧化物-半导体(CMOS)混合霍尔集成电路,并进行了应用展示.通过发展一套低温加工工艺(不超过180℃),将石墨烯霍尔元件制备在硅基CMOS芯片的钝化层上,从而与硅基CMOS电路实现了单片集成.本文的研究结果表明石墨烯在霍尔磁探测方向拥有重大的性能优势,在产业化应用中有巨大发展潜力.     

The enigma of the quantum Hall effect in graphene

We apply Laughlin’s gauge argument to analyze the ν=0 quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the zero temperature thermodynamic limit. We further predict that in a Corbino geometry measurement, where edge transport and other mesoscopic effects are unimportant, one should find the longitudinal conductivity vanishing in all graphene samples which have an underlying ν=0 quantized Hall effect. We argue that this ν=0 graphene quantum Hall state is qualitatively similar to the high field insulating phase (also known as the Hall insulator) in the lowest Landau level of ordinary semiconductor two-dimensional electron systems. We establish the necessity of having a high magnetic field and high mobility samples for the observation of the divergent resistivity as arising from the existence of disorder-induced density inhomogeneity at the graphene Dirac point.