C在不同位置掺杂(n,n)型BN纳米管的密度泛函研究

用密度泛函B3LYP/3-21G(d)方法,并利用周期边界条件,研究了C原子在不同位置掺杂的(n,n)型BN纳米管的结构与性质.揭示了几何结构特征、能量、稳定性和能带结构的变化规律.研究了C原子在B位或N位置分别掺杂的BN纳米管的模型(掺杂浓度x=1/(4n),n=3—9),部分B位掺杂管发生了变形,而所有N位掺杂管则几乎不变形,而且N位比B位的掺杂能更低(管更稳定),B位掺杂管的能隙为1.054—2.411 eV,N掺杂管的能隙为0.252—1.207 eV,所有掺杂管都是半导体,所有掺杂管都具有直接带隙.     

TiO2纳米管的力学和电子学性质

基于密度泛函理论研究了纤铁矿和锐钛矿型TiO₂纳米管的原子结构、稳定性、Young模量以及电子能带结构.计算结果显示：在纳米管直径较小时,锐钛矿型TiO₂纳米管的稳定性要好于纤铁矿型纳米管,随着管径的增大,纤铁矿型纳米管变得比锐钛矿型纳米管要更稳定.纤铁矿型TiO₂纳米管具有比锐钛矿型纳米管更大的Young模量,力学性能比较优异.另外,通过对电子能带结构的研究发现,手性对TiO₂纳米管的电子结构影响较大,纤铁矿（0,n）型和锐钛矿（n,0）型纳米管为间接带隙半导体,而纤铁矿（n,0）型和锐钛矿（0,n）型纳米管却具有直接带隙. 关键词： 2纳米管')" href="#">TiO₂纳米管 Young模量 间接带隙 直接带隙     

NiMgn(n=1—12)团簇的第一性原理研究

采用基于密度泛函理论(DFT)中的广义梯度近似 (GGA),在考虑自旋多重度的情况下,对NiMg_n(n=1—12)团簇进行了构型优化,频率分析和电子性质计算.结果表明：n=1,2时,体系的基态为自旋三重态,n≥3时,为单重态;Ni原子掺杂使主团簇结构发生了明显变化. n≤8时,三角双锥,四角双锥结构主导着NiMg_n基态团簇的生长行为; n在9—12之间时,主团簇Mg_n+1(n=1—12)的基于三棱柱构型的基态演化行为发生了一定程度的改变;n≥6时,Ni原子陷入了主团簇内部;掺杂使体系的平均结合能增大,能隙减小;n=4,6,10是团簇的幻数;不同尺寸团簇的s, p, d轨道杂化中,Ni原子3d, 4p成分所起作用不同; NiMg₆基态结构具有很高的对称性(O_h),很好的稳定性和化学活性,能隙仅为0.25eV. 关键词： n团簇')" href="#">NiMg_n团簇 几何结构 稳定性 化学活性     

关于Zn1-xBexO电子结构和光学性质的研究

采用基于密度泛函理论和平面波赝势技术的CASTEP程序对Zn_1-xBe_xO合金电子结构和光学性质进行了计算.当0≤x≤1,其带隙从0.963 eV变化到7.293 eV.分析了晶格畸变和能带间排斥效应对带隙的影响.当Be含量x=0.125,0.25,0.375,0.5,0.625,0.75时,a/b轴压应变控制着带隙变化;当x=0.875,1时,c轴压应变控制着带隙变化.能带间的p-d排斥影响价带顶变动,Γ_1v与Γ_1c之间排斥影响导带底变动.这些能带间的排斥效应被用来分析Zn_1-xBe_xO带隙变动.另外,也分析了Zn_1-xBe_xO介电函数虚部ε₂. 关键词： 带结构 光学性质 应变 排斥     

锯齿型碳纳米管的结构衍生及电子特性

利用密度泛函理论研究锯齿型单、双壁碳纳米管从核到管状团簇直至纳米管的逐层结构衍生.研究结果表明五边形结构在管状团簇生长中发挥关键作用.此外,基于管状团簇的研究,运用周期性边界条件得到锯齿型单、双壁碳纳米管,并通过计算能带和态密度研究其电子特性.对单壁(n,0)和双壁(n,0)@(2n,0)碳纳米管,当n=3q(q为整数)时,具有金属或窄带隙半导体特性;n?=3q时,具有较宽带隙半导体特性,且带隙随管径的增加而减小.然而,小管径碳纳米管受曲率效应的明显影响,n?=3q的(4,0),(4,0)@(8,0)和(5,0)@(10,0)均呈现金属性;n=3q的(6,0)@(12,0)则表现出明显的半导体特性.     

TiO$lt;sub$gt;2$lt;/sub$gt;纳米管电子结构和光学性质的第一性原理研究

运用基于密度泛函理论的第一性原理方法, 系统研究了小尺寸锐钛矿相(n,0)型TiO₂纳米管(D<16 Å)的几何构型、电子结构和光学性质. 结果表明: 随着管径增大, 体系单位TiO₂分子的形成能降低, 体系趋于稳定; 在管径14 Å左右, (n,0)型TiO₂纳米管会发生一次构型的转变. 能带分析显示, TiO₂纳米管的电子态比较局域化, 小管径下(D<14 Å)其导电性更好; 随着构型的转变, TiO₂纳米管由直接带隙转变为间接带隙, 并且带隙值随着管径的增大而增大, 这是由于π轨道重叠效应的影响大于量子限域效应所导致的结果. 两种效应的竞争, 使得TiO₂纳米管的介电函数虚部ε₂ (ω)谱的峰值位置随管径增大既可能红移也可能蓝移, 管径大于9 Å (即(8, 0)管)之后, TiO₂纳米管的光吸收会出现明显的增强. 关键词： 2纳米管')" href="#">TiO₂纳米管 第一性原理 电子结构 光学性质     

OsnN0,±(n=1—6)团簇几何结构与稳定性的理论研究

采用密度泛函理论(DFT)中的B3LYP方法,在Lanl2dz基组水平上对(Os_nN)^0,±(n=1—6)团簇的各种可能构型进行了几何参数全优化,得到了它们的基态构型;并对基态构型的平均结合能(E_b) 、二阶能量差分(Δ₂E_n) 、解离能(E_d)和能隙(E_g)进行了理论研 关键词： nN^{0')" href="#">Os_nN0 (n=1—6)团簇')" href="#">±(n=1—6)团簇 几何结构 稳定性 密度泛函理论}     

第一性原理对GenB(n=12—19)团簇的最低能量结构及其电子性质的研究

利用第一性原理在广义梯度近似下，研究了Ge_nB(n=12—19)团簇的结构和电子性质. 结果表明：Ge_nB(n=12—19)团簇具有较大的能隙;这些团簇的最低能量结构包含有Ge₉或Ge₁₀结构单元；B原子嵌套在Ge_n团簇中和B原子替代Ge_n+1团簇的Ge原子是构成Ge_{n 关键词： n}B团簇')" href="#">Ge_nB团簇 最低能量结构 电子性质     

密度泛函理论研究MgnOn(n=2—8)团簇的结构和电子性质

采用密度泛函理论中的广义梯度近似对Mg_nO_n(n=2—8)团簇的几何构型进行优化,并对能量、频率和电子性质进行了计算.结果表明,当n=2,3时,团簇的最低能量结构是平面结构;当n≥4时, 团簇的最低能量结构可以看成是由Mg₂O₂和Mg₃O₃单元组成的三维结构.O—Mg—O的钝角和较多的电荷转移对团簇的稳定性 关键词： nO_n团簇')" href="#">Mg_nO_n团簇 几何结构 电子性质     

自旋轨道耦合作用对碳纳米管电子能带结构的影响

本文考虑自旋轨道耦合作用的情况下,采用紧束缚近似螺旋对称模型计算了单壁碳纳米管的电子能带结构.研究发现:对于Armchair型单壁碳纳米管,自旋轨道耦合作用和弯曲效应共同导致了费米面Dirac点附近电子能带结构的能隙;对于Zigzag型和手性单壁碳纳米管,自旋轨道耦合作用使得电子最高占据态和最低未占据态产生能级劈裂,能级劈裂的大小不但与碳纳米管的直径和手性角密切相关,而且相对于费米面是不对称的;根据指数(n,m)可以将Zigzag型和手性单壁碳纳米管分为金属性碳纳米管(ν=0) 关键词： 单壁碳纳米管 自旋轨道耦合 紧束缚近似螺旋对称模型     

On the existence and stability of double-walled armchair silicon carbide nanotubes

A systematic study of type 1 armchair double-walled SiC nanotubes (DWNTs) (n,n)@(m,m) (3≤n≤6;7≤m≤12) using the finite cluster approximation is presented. The geometries of the tubes have been spin optimized using the hybrid functional B3LYP (Becke’s three-parameter exchange functional and the Lee-Yang-Parr correlation functional) and the all-electron 3-21G* basis set. The study indicates that the stabilities of the double-walled SiC nanotubes are of the same order as those of single-walled SiC nanotubes suggesting the possibilities of experimental synthesis of both single-walled and double-walled SiC nanotubes. The binding energy per atom or the cohesive energy of the double-walled nanotubes depends not only on the number of atoms but also on the coupling of the constituent single-walled nanotubes. The formation energy of the DWNTs is found to be maximum when the interlayer separation is about 3.5 Å. The DWNTs (n,n)@(n+4,n+4) are found to have large formation energies. In particular, (5,5)@(9,9) DWNT is the most stable tube in our study with a binding energy per atom of 5.07 eV, the largest formation energy of 12.39 eV, an interlayer separation of 3.58 Å and a “band gap” of 1.97 eV. All double-walled SiC nanotubes are found to be semiconductors, with the band gaps decreasing from single-walled nanotubes to double-walled nanotubes.     

Boron/nitrogen pairs Co-doping in metallic carbon nanotubes: a first-principle study

By using the first-principles calculations, the electronic structure and quantum transport properties of metallic carbon nanotubes with B/N pairs co-doping have been investigated. It is shown that the total energies of metallic carbon nanotubes are sensitive to the doping sites of the B/N pairs. The energy gaps of the doped metallic carbon nanotubes decrease with decreasing the concentration of the B/N pair not only along the tube axis but also around the tube. Moreover, the I--V characteristics and transmissions of the doped tubes are studied. Our results reveal that the conducting ability of the doped tube decreases with increasing the concentrations of the B/N pairs due to symmetry breaking of the system. This fact opens a new way to modulate band structures of metallic carbon nanotubes by doping B/N pair with suitable concentration and the novel characteristics are potentially useful in future applications.     

Semiempirical studies of the electronic structure of aluminophosphide and Haeckelite boronitride nanotubes

The paper presents the results of semiempirical quantum-chemical calculations of the electron energy characteristics of Haeckelite boronitride nanotubes (n, n)-BN₄₆₈ (n = 3, ..., 14), (n, n)-BN₄₈ (n = 3, ..., 11), and (n, n)-BN₅₇ (n = 4, 5, 6). The nanotubes were found to be dielectrics with forbidden band widths from 5.5 to 8 eV. The forbidden band energy of the nanotubes increased as their diameter grew. The influence of substitution defects on the physical properties of Haeckelite boronitride nanotubes was studied for the example of the carbon atom.     

A density functional theory study on parameters fitting of ultra long armchair （n, n） single walled boron nitride nanotubes

Armchair(n,n) single walled boron nitride nanotubes with n = 2-17 are studied by the density functional theory at the B3LYP/3-21G(d) level combined with the periodic boundary conditions for simulating the ultra long model.The results show that the structure parameters and the formation energies bear a strong relationship to n.The fitted analytical equations are developed with correlation coefficients larger than 0.999.The energy gaps of(2,2) and(3,3) tubes are indirect gaps,and the larger tubes(n = 4-17) have direct energy gaps.Results show that the armchair boron nitride nanotubes(n = 2-17) are insulators with wide energy gaps of between 5.93 eV and 6.23 eV.     

Structure and properties of BeO nanotubes

The structure of a new non-carbon (beryllium oxide BeO) nanotube consisting of a rolled-up graphene sheet is proposed, and its physical properties are described. Ab initio calculations of the binding energy, the electronic band structure, the density of states, the dependence of the strain energy of the nanotube on the nanotube diameter D, and the Young’s modulus Y for BeO nanotubes of different diameters are performed in the framework of the density functional theory (DFT). From a comparison of the binding energies calculated for BeO nanotubes and crystalline BeO with a wurtzite structure, it is inferred that BeO nanotubes can be synthesized by a plasma-chemical reaction or through chemical vapor deposition. It is established that BeO nanotubes are polar dielectrics with a band gap of ～5.0 eV and a stiffness comparable to that of the carbon nanotubes (the Young’s modulus of the BeO nanotubes Y _BeO is approximately equal to 0.7Y _C, where Y _C is the Young’s modulus of the carbon nanotubes). It is shown that, for a nanotube diameter D > 1 nm, the (n, n) armchair nanotubes are energetically more favorable than the (n, 0) zigzag nanotubes.     

Ni原子链填充碳纳米管的能量、电子结构和磁性的第一性原理计算

在广义梯度近似(GGA)下,利用密度泛函理论(DFT)框架下的第一性原理投影缀加波(PAW)赝势方法,研究了单根Ni原子链填充扶手椅型(n,n)(5≤n≤9)单壁碳纳米管的能量、电子结构和磁性.结果表明(5,5)碳纳米管直径过小排斥Ni原子链的插入,(6,6)碳纳米管是容纳Ni原子链的最小碳纳米管,特别是Ni原子链位于其中心轴线上时的形成能最低.以Ni@(6,6)和Ni@(7,7)系统为例,计算并分析了其自旋极化能带结构,电子总态密度,分波态密度和磁性,发现Ni原子的3d态电子 关键词： Ni原子链 碳纳米管 电子结构 磁性能     

Band structure and optical transitions in semiconducting double-wall carbon nanotubes

The electronic structure of semiconducting double-wall carbon nanotubes (CNTs) is calculated using the linearized augmented cylindrical wave method. The consideration is performed in the framework of the local density functional theory and the muffin-tin (MT) approximation for the one-electron Hamiltonian. The electronic spectrum of a double-wall CNT is determined by the free motion of electrons in the interatomic space of the two cylindrical layers, scattering by the MT spheres, and tunneling through the classically impenetrable region. Calculated results for double-wall CNTs of the (n, 0)@(n′, 0) zigzag type indicate that the shift of the band-gap width depends on whether n and n′ are divided by 3 with a remainder of 1 or 2. It is found that, regardless of the type of the inner tube, the energy gap E _g of the outer tube decreases by 0.15–0.22 eV if the tube belongs to the sequence n = 2 (mod 3). For the outer tubes of the sequence n = 1 (mod 3), the shifts of the band gap ΔE _g are always negative ?0.15 ≤ ΔE _g ≤ ?0.05 eV. In both cases, the shifts ΔE _g weakly oscillate rather than decrease in going to tubes of a larger diameter d. For the inner tubes, the changes in the band gap ΔE _g are more sensitive to the diameter. At 10 ≤ n ≤ 16, the shifts ΔE _g are positive and the maximum value of ΔE _g equals 0.39 and 0.32 for the sequences n = 2 (mod 3) and n = 1 (mod 3), respectively. In going to the inner tubes of a larger diameter, ΔE _g rapidly drops and then oscillates in the range from ?0.05 to 0.06 eV. The calculated results indicate that the shifts of the optical band gaps in core and shell tubes upon the formation of double-wall CNTs are significant, which must hinder the identification of double-wall CNTs by optical methods. On the other hand, the obtained results open up possibilities for a more detailed classification of double-wall nanotubes.     

Curvature effect on the electronic properties of BN nanoribbons

Density functional theory calculations have been used to investigate the rolling process of armchair boron nitride nanoribbons (n-ABNNRs, n?=?6,?8,?10,?12,?14,?16) to form (n,?0) zigzag boron nitrogen nanotubes (ZBNNTs, n?=?3–8). Results showed that by rolling (increasing the curvature) energy gap decreases and the difference between the initial and final states increases dramatically with decreasing the ribbon width. It was found that ZBNNTs have direct band gaps and the gap increases by diameter, while ABNNRs have direct band gaps which oscillate with the ribbon width.