聚(烯烃砜)作为抗蚀剂和记录材料的应用性能研究

本文报道了两种不同类型的聚(烯烃砜),即聚(环己烯砜)和聚(苯乙烯砜),并对它们进行了物理表征,给出了元素分析、红外光谱、核磁分析、凝胶渗透色谱及热重分析等的测试数据。用聚(环己烯砜)和聚(苯乙烯砜)作为抗蚀剂,其曝光特性:前者,灵敏度为5×10^-6库仑/厘米²,分辨率为0.75微米,反差约1.5;后者分别为6×10^-5库仑/厘米²,0.36微米及约2.5。尤为重要的是,聚(苯乙烯砜)具有优良的耐干法刻蚀的性能。聚(环己烯砜)作为强磁场聚焦电子照相记录材料,分辨率高于1.5微米。聚(苯乙烯砜)作为远紫外抗蚀剂,分辨率达0.5微米。     

聚吡咯/海藻酸钠纳米球的制备及其应用于高性能超级电容器

用海藻酸钠作为结构导向剂,通过原位氧化聚合吡咯法制备了聚吡咯/海藻酸钠(PPy/SA)纳米球.聚吡咯/海藻酸钠纳米球的形貌和结构通过扫描电镜(SEM)、X射线衍射(XRD)和傅里叶变换红外(FTIR)光谱进行表征.材料的电化学性能通过循环伏安法和恒电流充放电方法进行测试.电化学测试表明,聚吡咯/海藻酸钠纳米球在1 mol L-1KCl电解液中,电流密度为1 A g-1时其比电容高达347 F g-1.与纯聚吡咯相比较,聚吡咯/海藻酸钠纳米球具有更优异的循环稳定性能.     

聚丙烯酰胺/层状无机物纳米复合材料研究进展

聚丙烯酰胺(PAM)/层状无机物纳米复合材料相比于纯PAM具有更好的力学性能、超吸水性能、热稳定性能和气体阻隔性能等,是一种性能优异并在采油、农业和卫生学等领域有着广泛应用前景的新型聚合物基纳米复合材料。本文对近年来聚丙烯酰胺/层状无机物纳米复合材料的研究进展进行了综述。首先重点介绍了层状双氢氧化物(LDHs)在有机溶剂和水中剥离分散方面的研究进展,接着综述了PAM/LDH和PAM/粘土纳米复合材料的制备与结构表征,最后阐述了PAM/层状无机物纳米复合材料的流变性能、力学性能和超吸水性能等。     

纳米级功能聚苯乙烯粒子组成研究

以聚过氧化物 (PPX)为引发剂和乳化剂制备纳米级聚苯乙烯粒子 .采用溶解溶胀法、红外光谱 (IR)、差示扫描量热分析 (DSC)、薄层色谱分离 (TLC)等测试手段对所制备聚苯乙烯 (PS)粒子的化学组成及其结构进行了研究 .结果发现PS纳米粒子主要由含有一定量未分解过氧化基团的PS PPX交联大分子组成 ,为进一步制备具有特殊性能的核 /壳结构高聚物奠定了基础 .     

聚羟基苯乙烯在光致抗蚀剂中的应用及其合成

主要综述了聚羟基苯乙烯用作深紫外光致抗蚀剂主体成膜树脂的发展历程、应用现状以及一些最新的研究进展,并简要介绍了聚羟基苯乙烯的单体衍生物及其聚合物的制备方法.     

微电子光致抗蚀剂的发展及应用

光致抗蚀剂,又称光刻胶,是微电子工业中制作大规模和超大规模集成电路不可或缺的核心材料,因其在国民经济和国防建设中具有战略地位而备受研究者关注.本文梳理了光致抗蚀剂从早期的聚乙烯醇肉桂酸酯、环化橡胶-叠氮化合物、近紫外G线(436-nm)和I线(365-nm)酚醛树脂-重氮萘醌类光致抗蚀剂,到深紫外(248-nm和193-nm)、真空紫外(157-nm)光致抗蚀剂,再到极紫外(13.5-nm)、电子束、纳米压印、嵌段共聚物自组装、扫描探针等下一代光刻技术用光致抗蚀剂的发展脉络,综述了其研究进展.重点对深紫外化学增幅型光致抗蚀剂体系进行了总结,包括主体成膜树脂、光产酸剂以及溶解抑制剂、碱性化合物等添加剂,并介绍了下一代光刻技术用光致抗蚀剂的最新研究成果.最后对光致抗蚀剂未来的发展前景和方向进行了展望.     

聚吡咯/SnO2/醋酸纤维素纳米复合膜的制备及其光催化合成聚甲基丙烯酸甲酯

以(NH4)2S2O8为氧化剂,在纳米SnO2存在下乳液聚合得到了粒径为30 nm的聚吡咯/snO2(PPy/SnO2)复合纳米粉.以醋酸纤维素(CA)作为成膜剂,丙酮为溶剂制得PPy/SnO2/CA纳米复合膜.运用TG、XRD、TEM、SEM、AFM、FT-IR、DRS等测试技术对所得产品进行了表征.以甲基丙烯酸甲酯(MMA)的聚合为目标反应.考察了产品的光催化性能,制得了平均粒径为18 nm的PMMA,重均分子量为1.42×105.     

中低渗透高温高盐油藏驱油共聚物P(AM/AMPSNa/AANa)的合成及性能

在中低渗透高温高盐油藏聚合物驱技术中, 超高相对分子质量聚丙烯酰胺(HPAM)存在不易注入、剪切降粘显著和耐温抗盐性能差等问题。 本文以丙烯酰胺(AM)和2-丙烯酰胺基-2-甲基丙磺酸(AMPS)为单体, 采用过硫酸胺(NH₄)₂S₂O₈和甲基丙烯酸N, N-二甲氨基乙酯(DMAEMA)作为支化结构复合引发体系, 通过共聚后水解工艺, 合成含支化结构耐温抗盐驱油共聚物P(AM/AMPSNa/AANa)。 研究了引发温度、链转移剂用量、引发剂用量对共聚物特性黏数的影响, 并通过红外光谱(IR)和¹³C NMR表征了产物结构。 筛选特性黏数1915 mL/g左右的共聚物, 进行性能评价。 实验结果表明, 共聚物具有优异的耐温抗盐性能、抗剪切性能、抗老化性、注入性和驱油性能, 可应用在中低渗透高温高盐油藏三次采油中。     

水性聚氨酯/纳米TiO2复合乳液制备及其抗菌性能的研究

以佛尔酮二异氰酸酯(IPDI)、聚丙二醇(PPG)和改性纳米TiO2为主要原料,二羟甲基丙酸(DMPA)为亲水扩链剂和乙二胺(EDA)为小分子扩链剂,通过原位分散聚合方法制备了水性聚氨酯/纳米TiO2复合乳液。考察了改性纳米TiO2用量对复合乳液粘度、粒径及稳定性的影响。结果表明,复合乳液具有一定的紫外吸收能力和良好的抑菌作用,抑菌性能随纳米TiO2含量的增加而提高。     

静电纺丝制备聚苯胺及其复合导电纳米纤维的研究进展

聚苯胺(PANi)主链上电子高度离域,掺杂后导电性能好,是优良的结构型导电聚合物。PANi纳米纤维比表面积大,容易获得更高的导电性。本文综合论述了近年来国内外采用静电纺丝方法制备PANi及其复合纳米纤维的研究进展,重点介绍了纯PANi纳米纤维以及PANi/聚环氧乙烷(PEO)、PANi/聚丙烯腈(PAN)、PANi/聚甲基丙烯酸甲酯(PMMA)和PANi/聚乳酸(PLA)等复合纳米纤维的制备工艺及纤维特性,简单概述了PANi及其复合纳米纤维在电池隔膜、过滤、传感器、电磁屏蔽材料及吸波材料等方面的应用,并对其发展趋势进行展望。     

A Simulation Study on the Effect of Cross-Linking Agent Concentration for Defect Tolerant Demolding in UV Nanoimprint Lithography

The chemistry and composition of UV-sensitive resists are key factors determining the stress in the molded resist structure in UV nanoimprint lithography (UV-NIL) and thus the success of the process. The stress in the molded structure is mainly generated due to shrinkage of the resist in the UV curing step and also adhesion and friction at the stamp/resist interface in the subsequent demolding step. Thus, understanding of the stress generated in these steps is critical to the improvement of the process as well as the development of new UV resists. In this paper the effect of resist composition on the stress generation was studied by numerical simulations of the curing and demolding steps in UV-NIL. Parameters required for the simulation, such as resist shrinkage, Young's modulus, fracture strength, friction coefficient, crack initiation stress, and debonding energy, were determined experimentally for different resist compositions. As the cross-linking agent concentration increases the fracture strength also improves. In addition, as more cross-linking agent is added to the resist composition, both shrinkage stress due to the curing and also adhesion at the stamp/resist interface increase resulting in a larger maximum local stress experienced by the resist on demolding. By normalizing the overall maximum local stress by the fracture stress of the resist, we found that there is an optimum for the cross-linking agent concentration that leads to the most successful imprinting. Our finding is also corroborated by qualitative experimentations performed for UV-NIL with various resist compositions.     

电感耦合等离子体质谱中的基质效应

电感耦合等离子体质谱(Inductively coupled plasma mass spectrometry,ICP-MS)是痕量元素分析中最常用的检测技术,尽管ICP-MS在元素分析中表现出诸多优势,但其在检测复杂基质样品时,仍会遇到许多问题。复杂基质所引起的基质效应通常会导致分析物信号的抑制或者增强。基质效应影响程度取决于基质成分的绝对浓度,还与基质的种类、分析物的物理和化学性质以及仪器条件有关。该文介绍了ICP-MS中几种常见的基质效应及其影响因素,包括元素基质、含碳基质、酸基质和仪器条件等,探究了基质效应产生的可能原因,对国内外去除基质效应的方法,如样品前处理方法、样品引入系统、优化仪器参数和校准法等进行了系统的归纳和总结,并对基质效应的研究进行了展望。     

Hybrid organic–inorganic sol–gel materials for micro and nanofabrication

In this review hybrid organic–inorganic (HOI) resists as emerging materials alternative to organic polymers for micro and nanolithography are presented and discussed. In particular, results on sol–gel materials belonging to 3-glycidoxypropyltrimethoxysilane based HOI are presented and reviewed, highlighting as various lithographic techniques can be used to pattern their surface and showing examples of micro- and nano-patterned structures achieved with radiation assisted lithography (UV, X-rays and electron beam) or imprint techniques. It will be demonstrated the particular versatility shown by some of these materials, that in some case can be processed with all the lithographic methods herein considered, without any significant modification of their main composition and synthesis procedure. Moreover, results about the investigation of interaction between radiation and HOI materials and thermal treatment will be discussed, as well as possible synthesis strategies and composition modification developed in order to improve efficiency of curing, tailor HOI properties to specific needs (optical properties, resist composition, mechanical stability, etc.) and explore innovative and non conventional patterning techniques. The reported results highlight as these novel materials, thanks to their solution processability and higher performances respect to commercial polymeric resists, allow to use the above mentioned lithographic techniques in a direct patterning process, strongly simplifying conventional technique and reducing their processing time and costs.     

Chemical amplification resists: Inception,implementation in device manufacture,and new developments

The chemical amplification concept aimed at dramatically boosting the resist sensitivity was invented at IBM Research in San Jose, CA, in 1980. The sensitivity enhancement is achieved by generating acid by irradiation, which induces a cascade of chemical transformations in a resist film. A chemically amplified resist based on acid‐catalyzed deprotection was quickly employed in the mid‐80s in manufacture of 1 megabit (Mbit) dynamic random access memory (DRAM) devices by deep ultraviolet (UV) (～250 nm) lithography in IBM. The unexpectedly high‐resolution capability of chemical amplification resists promoted their acceptance in the resist community and the microelectronics industry. All the advanced lithographic technologies (current workhorse 248 nm, maturing 193 nm, and emerging 157 nm, extreme UV, and projection electron beam) depend on chemical amplification resists. This article describes the invention, implementation in device manufacturing, current status, and future perspective of chemical amplification resists. © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 41: 3863–3870, 2003     

光度分析法在药物分析中的研究与应用

综述了国内近年来光度分析法在药物分析中的研究与应用情况.就分光光度法、荧光光度法、化学发光法3种重要的分析方法,从反应条件、线性范围、灵敏度等方面介绍了光度分析法对不同反应体系的研究现状,展望了光度分析法在药物分析中的发展方向.     

Micro/nanopatterning of proteins via contact printing using high aspect ratio PMMA stamps and nanoimprint apparatus

Micro- and nanoscale protein patterns have been produced via a new contact printing method using a nanoimprint lithography apparatus. The main novelty of the technique is the use of poly(methyl methacrylate) (PMMA) instead of the commonly used poly(dimethylsiloxane) (PDMS) stamps. This avoids printing problems due to roof collapse, which limits the usable aspect ratio in microcontact printing to 10:1. The rigidity of the PMMA allows protein patterning using stamps with very high aspect ratios, up to 300 in this case. Conformal contact between the stamp and the substrate is achieved because of the homogeneous pressure applied via the nanoimprint lithography instrument, and it has allowed us to print lines of protein approximately 150 nm wide, at a 400 nm period. This technique, therefore, provides an excellent method for the direct printing of high-density sub-micrometer scale patterns, or, alternatively, micro-/nanopatterns spaced at large distances. The controlled production of these protein patterns is a key factor in biomedical applications such as cell-surface interaction experiments and tissue engineering.     

Electron-beam and x-ray resists for microlithography

Firstly, general considerations about microlithography and resists were presented, leading to the conclusion that positive resists seemed to be more suitable than negative resists to provide high resolution in electron-beam lithography and in X-ray lithography. Therefore, parameters affecting the sensitivity of positive resists to such types of radiation were outlined. Among these positive resists, poly (fluoroalkyl methacrylates) were shown to be interesting candidates, due to their enhanced radiation absorption. Thus, poly(1-, 1- dimethyl 2, 2, 3, 3-tetrafluoropropyl methacrylate) (called FBP resist) was synthesized and physico-chemically characterized. The lithographic performances of such a resist were evaluated both upon electron-beam and X-ray exposures. Its dry-etch resistance was also studied. Furthermore, fabrication of Field-Effect Transistors using this resist was demonstrated.     

薄层软刻蚀法制备PMMA微图案结构

对现有的软刻蚀方法提出了改进,让其与压印技术及毛细力刻蚀技术相结合形成一种薄层软刻蚀技术,并以这种技术制备出PMMA薄膜微图案化结构.在30 mm/h的拉膜速度以及弹性印章表面图形深度确定不变的情况下,PMMA流体能够完全填充到弹性印章的微通道中,SEM和光学显微镜照片证明得到的PMMA微图案是相互分离的.因此,薄层软刻蚀技术可以克服普通微模塑方法制备分离图形困难和纳米压印技术中需要使用巨大机械压力的缺点.     

分子印迹聚合物微球的制备及表征技术

分子印迹聚合物微球作为一种具有分子识别能力的新型高分子材料,以其吸附选择性好、色谱效率高、便于功能设计等优点在固相萃取、药物手性分离等领域取得了应用.本文介绍了分子印迹聚合物微球的主要制备方法,比较了不同的聚合物微球制备方法用于分子印迹技术中的特点,同时针对不同聚合方法对分子印迹聚合物微球性能的影响作了相应评述,此外对其结构与性能的表征方法也作了较为详细的介绍,在此基础上分析了存在的问题及今后的发展方向.     

Resist system based on the cationic photocrosslinking of poly(4-hydroxystyrene) and polyfunctional electrophiles

New resist systems based on acid-catalyzed, electrophilic aromatic substitution are described. These new resists show high sensitivity to deep UV and E-beam radiation with values approaching 2 mJ/cm² and 2 μC/cm², respectively. The resists are based on a three component system consisting of poly(4-hydroxystyrene), a polyfunctional, low molecular weight, latent electrophile, and a photoactive onium salt used as an acid generator. Irradiation of the resist film produces a latent image of acid dispersed in the matrix. During the postbaking step the photo-generated acid reacts with the latent polyfunctional electrophile and releases a reactive carbocationic intermediate with concomitant liberation of acetic acid. The carbocationic intermediate then reacts with neighboring phenolic moieties in a crosslinking reaction. The substitution reaction liberates a proton, making the process catalytic in nature, thus incorporating the concept of chemical amplification. These highly sensitive materials can be used as nonswelling negative multipurpose resists that function in deep-UV, x-ray or E-beam modes. © 1993 John Wiley & Sons, Inc.